TWI529877B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TWI529877B
TWI529877B TW101128691A TW101128691A TWI529877B TW I529877 B TWI529877 B TW I529877B TW 101128691 A TW101128691 A TW 101128691A TW 101128691 A TW101128691 A TW 101128691A TW I529877 B TWI529877 B TW I529877B
Authority
TW
Taiwan
Prior art keywords
wafer
heat
semiconductor wafer
wiring substrate
disposed
Prior art date
Application number
TW101128691A
Other languages
English (en)
Chinese (zh)
Other versions
TW201310590A (zh
Inventor
根來修司
Original Assignee
新光電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新光電氣工業股份有限公司 filed Critical 新光電氣工業股份有限公司
Publication of TW201310590A publication Critical patent/TW201310590A/zh
Application granted granted Critical
Publication of TWI529877B publication Critical patent/TWI529877B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW101128691A 2011-08-18 2012-08-09 半導體裝置 TWI529877B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011178933A JP5779042B2 (ja) 2011-08-18 2011-08-18 半導体装置

Publications (2)

Publication Number Publication Date
TW201310590A TW201310590A (zh) 2013-03-01
TWI529877B true TWI529877B (zh) 2016-04-11

Family

ID=47712063

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128691A TWI529877B (zh) 2011-08-18 2012-08-09 半導體裝置

Country Status (5)

Country Link
US (1) US8558372B2 (enExample)
JP (1) JP5779042B2 (enExample)
KR (1) KR102005313B1 (enExample)
CN (1) CN102956584B (enExample)
TW (1) TWI529877B (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9006889B2 (en) 2011-11-11 2015-04-14 Skyworks Solutions, Inc. Flip chip packages with improved thermal performance
JP5974454B2 (ja) * 2011-11-14 2016-08-23 イビデン株式会社 電子部品
CN103117275B (zh) * 2013-01-31 2015-08-19 华为技术有限公司 一种芯片封装结构及芯片封装方法
US8987876B2 (en) * 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US20160284624A1 (en) * 2013-03-21 2016-09-29 Nec Corporation Heat sink structure, semiconductor device and heat sink mounting method
JP2015029043A (ja) * 2013-06-26 2015-02-12 京セラ株式会社 電子装置および光モジュール
US9082743B2 (en) 2013-08-02 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC packages with heat dissipation structures
US9583415B2 (en) * 2013-08-02 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with thermal interface material on the sidewalls of stacked dies
US9735082B2 (en) 2013-12-04 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC packaging with hot spot thermal management features
US9754855B2 (en) * 2014-01-27 2017-09-05 Hitachi, Ltd. Semiconductor module having an embedded metal heat dissipation plate
US9330997B1 (en) * 2014-03-14 2016-05-03 Altera Corporation Heat spreading structures for integrated circuits
JP6312527B2 (ja) 2014-05-23 2018-04-18 新日本無線株式会社 放熱板を備えた電子部品の実装構造
JP6457206B2 (ja) * 2014-06-19 2019-01-23 株式会社ジェイデバイス 半導体パッケージ及びその製造方法
FR3023059B1 (fr) 2014-06-25 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre comportant un dissipateur de chaleur
US10685904B2 (en) * 2014-11-21 2020-06-16 Delta Electronics, Inc. Packaging device and manufacturing method thereof
US9818720B2 (en) * 2015-07-02 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method for chip package
US9748184B2 (en) * 2015-10-15 2017-08-29 Micron Technology, Inc. Wafer level package with TSV-less interposer
US10504827B2 (en) * 2016-06-03 2019-12-10 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10182514B2 (en) 2016-06-27 2019-01-15 International Business Machines Corporation Thermal interface material structures
US10062664B2 (en) * 2016-06-30 2018-08-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor packaging device with heat sink
US9859262B1 (en) * 2016-07-08 2018-01-02 Globalfoundries Inc. Thermally enhanced package to reduce thermal interaction between dies
CN106413343B (zh) 2016-09-12 2019-04-26 华为技术有限公司 散热器、散热装置、散热系统及通信设备
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
MY192082A (en) * 2016-12-27 2022-07-26 Intel Corp Interconnect core
US10643920B1 (en) * 2017-03-24 2020-05-05 Juniper Networks, Inc. Lid for semiconductor electronic package
JP2019012714A (ja) * 2017-06-29 2019-01-24 株式会社ディスコ 半導体パッケージの製造方法
US10957611B2 (en) 2017-08-01 2021-03-23 Mediatek Inc. Semiconductor package including lid structure with opening and recess
KR102356999B1 (ko) * 2017-09-26 2022-02-04 한국전자통신연구원 반도체 장치 및 이의 제조 방법
KR102039710B1 (ko) * 2017-10-19 2019-11-01 삼성전자주식회사 유기 인터포저를 포함하는 반도체 패키지
KR20190055662A (ko) * 2017-11-15 2019-05-23 에스케이하이닉스 주식회사 열 재분배 패턴을 포함하는 반도체 패키지
KR102460720B1 (ko) 2017-11-16 2022-10-31 삼성전자주식회사 반도체 소자 패키지를 포함하는 전자 장치
US10775576B2 (en) * 2018-03-01 2020-09-15 Ayar Labs, Inc. Thermal management system for multi-chip-module and associated methods
KR102086364B1 (ko) * 2018-03-05 2020-03-09 삼성전자주식회사 반도체 패키지
WO2019189647A1 (ja) * 2018-03-30 2019-10-03 日本電産エレシス株式会社 回路基板
US10770369B2 (en) * 2018-08-24 2020-09-08 Advanced Semiconductor Engineering, Inc. Semiconductor device package
JP7061949B2 (ja) * 2018-10-24 2022-05-02 ルネサスエレクトロニクス株式会社 半導体装置
US11029475B2 (en) * 2019-04-08 2021-06-08 Cisco Technology, Inc. Frame lid for in-package optics
US11894286B2 (en) * 2019-06-13 2024-02-06 Bae Systems Information And Electronic Systems Integration Inc. Hermetically sealed electronics module with enhanced cooling of core integrated circuit
US11037860B2 (en) 2019-06-27 2021-06-15 International Business Machines Corporation Multi layer thermal interface material
US20210035921A1 (en) 2019-07-30 2021-02-04 Intel Corporation Soldered metallic reservoirs for enhanced transient and steady-state thermal performance
US11830787B2 (en) 2019-08-06 2023-11-28 Intel Corporation Thermal management in integrated circuit packages
US20210043573A1 (en) * 2019-08-06 2021-02-11 Intel Corporation Thermal management in integrated circuit packages
US12007170B2 (en) 2019-08-06 2024-06-11 Intel Corporation Thermal management in integrated circuit packages
US11784108B2 (en) 2019-08-06 2023-10-10 Intel Corporation Thermal management in integrated circuit packages
US11948855B1 (en) * 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US11728282B2 (en) 2019-10-17 2023-08-15 Advanced Semiconductor Engineering, Inc. Package structure, assembly structure and method for manufacturing the same
US12002727B2 (en) * 2020-02-11 2024-06-04 Intel Corporation Barrier structures for underfill containment
US11769710B2 (en) * 2020-03-27 2023-09-26 Xilinx, Inc. Heterogeneous integration module comprising thermal management apparatus
US11774190B2 (en) 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
CN111415927A (zh) * 2020-05-19 2020-07-14 华进半导体封装先导技术研发中心有限公司 封装结构及其制备方法
CN212517170U (zh) * 2020-05-30 2021-02-09 华为技术有限公司 一种芯片封装结构及电子设备
WO2022067589A1 (zh) * 2020-09-29 2022-04-07 华为技术有限公司 一种芯片封装和电子设备
JP7524044B2 (ja) * 2020-12-09 2024-07-29 新光電気工業株式会社 放熱板、半導体装置及び放熱板の製造方法
US11676912B2 (en) * 2020-12-23 2023-06-13 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
JP7484700B2 (ja) 2020-12-23 2024-05-16 富士通株式会社 半導体装置及び半導体装置の製造方法
US11830785B2 (en) * 2021-10-06 2023-11-28 STATS ChipPAC Pte. Ltd. Package with windowed heat spreader
TWI776747B (zh) * 2021-12-03 2022-09-01 矽品精密工業股份有限公司 電子封裝件及其製法
CN114937660A (zh) * 2022-04-21 2022-08-23 盛合晶微半导体(江阴)有限公司 一种电子封装结构
CN117784325A (zh) * 2022-09-20 2024-03-29 华为技术有限公司 光收发模块及通信设备
US20240105692A1 (en) * 2022-09-23 2024-03-28 Wolfspeed, Inc. Packaged flip chip radio frequency transistor amplifier circuits
WO2025143997A1 (ko) * 2023-12-27 2025-07-03 이종주 브릿지 일체형 로직다이를 갖는 고대역폭 메모리 및 이를 적용하는 패키지

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864732A (ja) * 1994-08-26 1996-03-08 Mitsubishi Electric Corp 半導体集積回路装置
JPH11318695A (ja) * 1998-05-15 1999-11-24 Toshiba Home Techno Corp 家庭用加熱機器
US6275381B1 (en) * 1998-12-10 2001-08-14 International Business Machines Corporation Thermal paste preforms as a heat transfer media between a chip and a heat sink and method thereof
JP4023054B2 (ja) * 1999-12-07 2007-12-19 株式会社デンソー 電子回路ユニット
US6888722B2 (en) * 1999-12-30 2005-05-03 Intel Corporation Thermal design for minimizing interface in a multi-site thermal contact condition
JP2002289750A (ja) * 2001-03-26 2002-10-04 Nec Corp マルチチップモジュールおよびその放熱構造
JP3960115B2 (ja) * 2001-05-24 2007-08-15 松下電器産業株式会社 携帯用電力増幅器
JP2004172489A (ja) 2002-11-21 2004-06-17 Nec Semiconductors Kyushu Ltd 半導体装置およびその製造方法
US7031162B2 (en) * 2003-09-26 2006-04-18 International Business Machines Corporation Method and structure for cooling a dual chip module with one high power chip
JP4686318B2 (ja) * 2005-09-28 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US7995344B2 (en) * 2007-01-09 2011-08-09 Lockheed Martin Corporation High performance large tolerance heat sink
JP2008218669A (ja) * 2007-03-02 2008-09-18 Nec Electronics Corp 半導体装置
JP5009085B2 (ja) 2007-08-09 2012-08-22 新光電気工業株式会社 半導体装置
JP2010034431A (ja) * 2008-07-31 2010-02-12 Renesas Technology Corp 半導体装置の製造方法
JP4842346B2 (ja) * 2009-04-21 2011-12-21 シャープ株式会社 電子部品モジュールおよびその製造方法
JP2011023587A (ja) * 2009-07-16 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
CN102956584A (zh) 2013-03-06
CN102956584B (zh) 2017-03-01
KR20130020570A (ko) 2013-02-27
KR102005313B1 (ko) 2019-07-30
US8558372B2 (en) 2013-10-15
JP5779042B2 (ja) 2015-09-16
TW201310590A (zh) 2013-03-01
US20130043581A1 (en) 2013-02-21
JP2013042030A (ja) 2013-02-28

Similar Documents

Publication Publication Date Title
TWI529877B (zh) 半導體裝置
CN213752684U (zh) 具有竖直热管理的堆叠式硅封装组件
US10978373B2 (en) Semiconductor device methods of manufacture
US10062665B2 (en) Semiconductor packages with thermal management features for reduced thermal crosstalk
KR100586698B1 (ko) 수직 실장된 반도체 칩 패키지를 갖는 반도체 모듈
JP5661095B2 (ja) 半導体デバイス、半導体デバイスを形成する方法
JP6122863B2 (ja) 複数の熱経路を備える積み重ねられた半導体ダイアセンブリ、ならびに関連するシステムおよび方法
TWI467726B (zh) 堆疊封裝結構
US7772692B2 (en) Semiconductor device with cooling member
JP4086068B2 (ja) 半導体装置
JP5081578B2 (ja) 樹脂封止型半導体装置
TW201428936A (zh) 將中央處理單元／圖形處理單元／邏輯晶片嵌入疊合式封裝結構基板之方法
CN111081649A (zh) 半导体封装
KR20210024362A (ko) 반도체 패키지
JP2011035352A (ja) 半導体装置
JP5357706B2 (ja) 半導体実装構造体
KR20220126320A (ko) 반도체 패키지
KR20110115304A (ko) 방열 유닛 및 그 제조방법과 이를 이용한 스택 패키지
US11973000B2 (en) Heat dissipation plate and semiconductor device
JP2020188082A (ja) 半導体パッケージ
TW201620090A (zh) 封裝裝置與其製作方法
US20250014963A1 (en) Semiconductor package
JP4371946B2 (ja) 半導体装置及びその基板接続構造
CN120998890A (zh) 堆叠封装结构及其制备方法、电子设备
CN119560460A (zh) 电子封装件及其散热结构