WO2015111202A1 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
WO2015111202A1
WO2015111202A1 PCT/JP2014/051602 JP2014051602W WO2015111202A1 WO 2015111202 A1 WO2015111202 A1 WO 2015111202A1 JP 2014051602 W JP2014051602 W JP 2014051602W WO 2015111202 A1 WO2015111202 A1 WO 2015111202A1
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WIPO (PCT)
Prior art keywords
semiconductor
semiconductor module
module according
semiconductor device
metal base
Prior art date
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PCT/JP2014/051602
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English (en)
French (fr)
Inventor
宝蔵寺　裕之
紺野　哲豊
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株式会社日立製作所
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Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP2015558695A priority Critical patent/JP6093455B2/ja
Priority to US15/110,972 priority patent/US9754855B2/en
Priority to PCT/JP2014/051602 priority patent/WO2015111202A1/ja
Priority to DE112014005694.4T priority patent/DE112014005694B4/de
Publication of WO2015111202A1 publication Critical patent/WO2015111202A1/ja

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Definitions

  • the present invention relates to a semiconductor module, and more particularly to a semiconductor module equipped with a semiconductor element for power conversion such as motor control.
  • the motor drive used in railways, electric cars and hybrid cars is usually controlled by a power converter (inverter).
  • inverter In the part called the main circuit of the inverter, there are switching elements such as IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Semiconductor Field Effect Transistor) that control the switching of a large current, and an FWD that releases a reverse voltage generated at the time of switching.
  • Semiconductor modules equipped with diodes such as Free (Wheal (Diode)) are used.
  • Patent Document 1 discloses a semiconductor module including an assembly of semiconductor device units in which a plurality of semiconductor device units in which semiconductor chips are sealed are combined, a wiring board, and a bolting unit.
  • an elastic adhesive or an elastic sheet is interposed between a semiconductor device unit and a wiring board, whereby pressure applied to the wiring board by bolting acts equally on each semiconductor device unit. It is disclosed that the adhesion of the unit to the cooling body and the thermal diffusibility can be improved.
  • a semiconductor module is configured so as to improve the adhesion to a cooling body by combining a single unit encapsulating a semiconductor element such as an IGBT, the heat dissipation from the semiconductor element can be improved.
  • the heat radiation path from the semiconductor element to the cooling body of the semiconductor device unit is a semiconductor element, solder, a conductive pattern, an insulating substrate, a conductive pattern, solder, and a copper block. This is the same as a conventional general semiconductor module, and the heat dissipation in the semiconductor device unit cannot be improved.
  • An object of the present invention is to solve the above-described problems and provide a semiconductor module that can improve heat dissipation to a cooling body.
  • a semiconductor module according to the present invention includes a plurality of resin-molded semiconductor devices mounted on a single metal base and electrically connected to the plurality of semiconductor devices. Is a structure in which a metal heat radiating plate formed on the surface of the insulating substrate opposite to the semiconductor element mounting surface is exposed from the resin mold, and the metal heat radiating plate of the semiconductor device is formed in an opening provided in the metal base. And the back surface of the metal heat radiating plate serves as an installation surface for the cooling body.
  • the heat radiation path from the semiconductor element to the cooling body is only the insulating substrate and the metal heat radiation plate, so that the heat dissipation can be improved.
  • FIG. 1 It is a section schematic diagram of the semiconductor module of a 1st embodiment of the present invention. It is a principal part perspective view which shows the manufacturing process of this invention. It is a principal part perspective view which shows the manufacturing process of this invention. It is a principal part perspective view which shows the manufacturing process of this invention. It is a section schematic diagram of the semiconductor module of a 2nd embodiment of the present invention. It is a section schematic diagram of the semiconductor module of a 3rd embodiment of the present invention. It is a section schematic diagram of the semiconductor module of a 4th embodiment of the present invention. It is a section schematic diagram of the semiconductor module of a 5th embodiment of the present invention. 2 is a schematic cross-sectional view when the semiconductor module according to the present invention is mounted on a cooling body 30.
  • FIG. 1 It is a principal part perspective view which shows the manufacturing process of this invention. It is a principal part perspective view which shows the manufacturing process of this invention. It is a principal part perspective view which shows the manufacturing process of this invention.
  • FIG. 1 is a schematic cross-sectional view of a semiconductor module according to a first embodiment of the present invention.
  • FIG. 1 does not show a cross section of the semiconductor module of the present invention taken along a specific cutting line, and does not show connection between a control terminal or a semiconductor element inside a resin seal and a wiring layer.
  • 2, 3, and 4 are perspective views showing a main part of the manufacturing process of the semiconductor module 100 of the present embodiment.
  • a plurality of resin-molded semiconductor devices 1 are mounted on a single metal base 2, and the plurality of semiconductor devices 1 are electrically connected by wirings 7.
  • the reason for configuring the module by combining a plurality of resin mold type semiconductor devices is as follows.
  • a structure in which the case is sealed with a sealing agent such as soft silicone gel is common.
  • a flexible gel is difficult to peel even when subjected to thermal stress, and has the advantage of ensuring insulation of a semiconductor element, a terminal, etc., but cannot relax thermal stress at the peripheral connection portion of the semiconductor element.
  • the periphery of the semiconductor element is covered with a hard resin, thereby suppressing the distortion of the peripheral connection part of the semiconductor element and improving the connection reliability.
  • the insulation reliability and the connection reliability are improved by dividing the circuit constituting the module into a plurality of units and configuring the module with a plurality of resin mold type semiconductor devices. Further, by mounting a plurality of resin-molded semiconductor devices on a single metal base to form a module, the mounting burden on the customer side is reduced.
  • a wiring layer 4a is provided on one surface of an insulating substrate 3, and a metal heat sink 4b is provided on the other surface.
  • a semiconductor element such as an IGBT or a diode is provided on the wiring layer 4. 5 is mounted via the solder 10.
  • the semiconductor element mounting surface of the insulating substrate 3 is a single-sided mold type in which the sealing resin 11 is sealed, and the metal heat radiation plate 4b on the back surface side of the insulating substrate 3 is exposed.
  • the insulating substrate 3 is made of ceramic such as alumina, aluminum nitride, or silicon nitride
  • the wiring layer 4a and the metal heat sink 4b are made of copper, aluminum, or the like.
  • the wiring layer may be used after the surface is plated with nickel or the like, if necessary.
  • the bonding material for connecting the semiconductor element 5 and the wiring layer 4a is not limited to solder, and for example, a bonding material using low-temperature sintering of metal particles may be used.
  • the metal base 2 is provided with a plurality of openings 21 corresponding to the shape of the metal heat sink 4b.
  • a plurality of semiconductor devices 1 are mounted on the metal base 2 by fitting the metal heat sink 4 b of the semiconductor device 1 into the opening 21 of the metal base 2.
  • the semiconductor substrate 1 is configured not to fall out of the opening 21 by making the insulating substrate 3 larger than the metal heat sink 4b.
  • the semiconductor device 1 can be prevented from falling off by making the metal heat sink 4 b and the opening 21 have a tapered shape in which the opening width of the metal base 2 on the semiconductor device mounting surface side is widened.
  • the semiconductor device 1 includes an external connection terminal electrically connected to an electrode or a wiring layer of the semiconductor element 5, and the external connection terminal and the wiring 7 are connected to electrically connect the plurality of semiconductor devices 1. Wiring is performed. Thereafter, the inside of the case 12 is filled with the insulating sealant 8, and a lid 9 is provided so that a necessary part of the wiring 7 is exposed, whereby the semiconductor module 100 shown in FIGS. 1 and 4 is obtained.
  • the semiconductor module 100 of this embodiment is provided with a bolt through hole 23 for fixing the semiconductor module to the cooling body in the metal base 2 and the case 12, and is cooled by being bolted by the bolt through hole 23. Fixed to the body.
  • the bolt through hole 23 can be provided only in one of the metal base 2 and the case 12 by changing the arrangement and shape of the metal base 2 and the case 12.
  • a flexible resin such as silicone gel, a hard resin such as an epoxy resin, a phenol resin, or a urethane resin can be used.
  • the connection reliability is excellent, but when the mold resin and the member are peeled off, the insulation reliability may be lowered.
  • the inside of the casing formed of the metal base 2 and the case (the case 12 and the lid 9) is insulated and sealed in order to ensure the insulation between the wirings 7 and to improve the insulation reliability of the molded semiconductor device.
  • the structure filled with the stopper 8 is adopted.
  • the semiconductor module of this embodiment by mounting the single-sided mold type semiconductor device 1 in the opening 21 of the base substrate 2, the metal heat radiation plate 4 b on the back surface of the insulating substrate 3 is exposed to the back surface side of the base substrate 2.
  • the rear surface of the metal heat radiating plate 4b becomes an installation surface for the cooling body.
  • the metal heat radiating plate 4b can be directly adhered to the cooling body, and in the heat radiation path from the semiconductor element 5 such as IGBT to the cooling body, a metal base such as solder or resin adhesive layer having a low thermal conductivity and the semiconductor. Since there is no device joint, cooling can be performed with high efficiency. At this time, it is desirable that the back surface of the metal base 2 and the back surface of the metal heat sink 4 are configured to be the same surface. Moreover, if the close contact with the metal heat sink 4 can be ensured by devising the shape or the like of the cooling body, the back surface of the metal base 2 and the back surface of the metal heat sink 4 do not have to be the same surface.
  • FIG. 5 is a schematic cross-sectional view showing a second embodiment relating to a method for fixing / connecting another semiconductor device 1 and a metal base housing 2 of the present invention.
  • the fastening portion between the semiconductor device 1 and the metal base 2 only needs to have a structure that prevents the semiconductor device 1 from coming off from the metal base 2 and spreads in the semiconductor device mounting direction as shown in the schematic cross-sectional view of FIG. It is possible to fix the semiconductor device 1 and the metal base housing 2 by providing a taper so as to have a shape or by providing a step 22 as shown in FIG.
  • the semiconductor module 100 is fixed to a cooling body (not shown) with a screw so as to penetrate the bolt through hole 23 shown in FIG.
  • heat radiation from the semiconductor device 1 is improved by pressing the semiconductor device 1 so as to be in close contact with the cooling body.
  • the semiconductor device 1 may be lifted from the metal base 2 due to thermal stress or the like during operation, and the metal heat sink 4 and the cooling body may be insufficiently adhered.
  • the opening of the metal base 2 and the side surface of the metal heat radiating plate 4 are joined using a joining material, and the fastening portion 6 is formed, so that the semiconductor device 1 can be prevented from being lifted.
  • FIG. 6 is a schematic cross-sectional view showing a third embodiment relating to another method of fixing the semiconductor device 1 for preventing the semiconductor device 1 from floating from the metal base 2.
  • the protrusion 121 is provided on the case fixed to the metal base 2.
  • the semiconductor device 1 is pressed against the metal base 2 by the protrusion 121.
  • a load is applied to the case 12 on the metal base side by passing through the metal base 2 and the bolt through hole 23 of the case 12 and fixing to the cooling body with screws. It becomes a state.
  • a force that presses against the metal base is applied to the semiconductor device 1 from the protrusion 12, and the adhesion between the cooling body and the semiconductor device 1 can be improved.
  • FIG. 7 is a schematic cross-sectional view showing a fourth embodiment relating to another connection method of the wiring 7 for connecting a plurality of semiconductor devices 1.
  • the wiring 7 for electrical connection between the semiconductor devices 1 is provided in the lid 9 in advance.
  • electrical wiring of the plurality of semiconductor devices 1 is performed.
  • the connection between the external connection terminal of the semiconductor device 1 and the inner layer wiring of the lid 9 is performed by providing an opening in the lid 9 so that the connection portion of the inner layer wiring is exposed.
  • FIG. 8 is a schematic cross-sectional view showing a fifth embodiment relating to the metal heat sink 4b formed on the insulating substrate in the present invention.
  • the thickness of the metal heat radiating plate 4b in contact with the cooling body is configured such that the end portion is thicker than the center portion. In the semiconductor device 1, the calorific value at the center tends to increase. On the other hand, by reducing the thickness of the central portion of the metal heat radiating plate 4b in the semiconductor device 1 as in this embodiment, the thermal resistance of the central portion is reduced, and as a result, the heat concentration in the central portion can be reduced.
  • FIG. 9 is a schematic cross-sectional view when the semiconductor module 100 is mounted on the cooling body 30. The semiconductor module 100 is used by being mounted on the cooling body 30. During operation, the temperature of the semiconductor device 1 rises and a temperature difference is generated between the cooling body 30 and the semiconductor device 1.
  • the materials of the cooling body 30 and the metal heat radiating plate 4b of the semiconductor device 1 are different, there is a possibility that a gap may be formed between the contact surfaces due to the difference in temperature and the difference in thermal expansion coefficient between the materials. Therefore, in order to reduce such a gap, it is effective to make the material of the metal heat sink 4b in contact with the cooling body 30 of the semiconductor device 1 and the material of the cooling body 30 the same.
  • the material of the wiring layer 4a and the metal heat sink 4b provided on both surfaces of the insulating substrate 3 may be the same, or only the metal heat sink 4b may be the same material as the cooling body 30.

Abstract

　本発明は半導体素子から冷却体への熱放散性が向上可能な半導体モジュールを提供することを目的とする。本発明の半導体モジュール１００は、複数の樹脂モールド型の半導体装置１が１枚の金属ベース２に搭載され、これらが電気的に接続されて構成され、複数の半導体装置１は、絶縁基板３の半導体素子搭載面とは反対側の面に形成された金属放熱板４が樹脂モールド１１から露出した構造であり、金属ベース２に設けられた開口部２１に半導体装置の金属放熱板４がはめ込まれ、金属放熱板４の裏面が冷却体への設置面となることを特徴とする。

Description

半導体モジュール
　本発明は、半導体モジュールに関するものであり、特にモータ制御等の電力変換用の半導体素子を搭載した半導体モジュールに関する。
　鉄道や電気自動車やハイブリッド自動車に用いられるモータ駆動は、通常、電力変換器（インバータ）により制御されている。インバータの主回路と呼ばれる部分には、大電流をスイッチング制御するＩＧＢＴ（Insulated Gate Bipolar Transistor）やＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor）などのスイッチング素子と、スイッチング時に発生する逆電圧を解放するＦＷＤ（Free Wheal Diode）などのダイオードが搭載された半導体モジュールが用いられる。車両用の分野では、搭載機器の小型軽量化が加速されているため、デバイスあるいはパッケージ当たりの電力密度は高くなる傾向にある。そのため、高電圧に対する絶縁性の確保、高電力密度に対応した放熱性の向上が強く望まれている。
　特許文献１には、半導体チップを封止した半導体装置用ユニットを複数組み合させた半導体装置用ユニットの集合体と、配線基板、ボルト締めユニットを具備する半導体モジュールが開示されている。特許文献１では、半導体装置用ユニットと配線基板との間に弾性接着剤または弾性シートを介在させることにより、ボルト締めによって配線基板に加えられる圧力が各半導体装置用ユニットに等しく作用し、半導体装置ユニットの冷却体への密着性、熱拡散性を向上できることが開示されている。
特開2011-142124号公報
　上述のように、ＩＧＢＴ等の半導体素子を封止した単体ユニットを組み合わせて冷却体への密着性を向上させるように半導体モジュールが構成されれば、半導体素子からの熱放散性の向上が可能になる。しかし、特許文献１では、半導体装置用ユニットの半導体素子から冷却体までの放熱経路は、半導体素子、はんだ、導電パターン、絶縁基板、導電パターン、はんだ、銅ブロックとなる。これは、従来の一般的な半導体モジュールと変わらず、半導体装置用ユニット内での熱放散性を向上させることはできない。
　本発明の目的は、上述の課題を解決して、冷却体への熱放散性が向上可能な半導体モジュールを提供することである。
　上記の課題を解決するため、本発明に係る半導体モジュールは、複数の樹脂モールド型の半導体装置が１枚の金属ベースに搭載され、これらが電気的に接続されて構成され、前記複数の半導体装置は、絶縁基板の半導体素子搭載面とは反対側の面に形成された金属放熱板が樹脂モールドから露出した構造であり、前記金属ベースに設けられた開口部に前記半導体装置の前記金属放熱板がはめ込まれ、前記金属放熱板の裏面が冷却体への設置面となることを特徴とする。
　本発明の半導体モジュールでは、半導体素子から冷却体に至る放熱経路が絶縁基板と金属放熱板のみとなり、熱放散性の向上が図れる。
　本発明によれば、冷却体への熱放散性が向上可能な半導体モジュールを提供できる。
本発明の第１実施形態の半導体モジュールの断面概略図である。 本発明の製造工程を示す要部斜視図である。 本発明の製造工程を示す要部斜視図である。 本発明の製造工程を示す要部斜視図である。 本発明の第２実施形態の半導体モジュールの断面概略図である。 本発明の第３実施形態の半導体モジュールの断面概略図である。 本発明の第４実施形態の半導体モジュールの断面概略図である。 本発明の第５実施形態の半導体モジュールの断面概略図である。 本発明における半導体モジュールを冷却体３０に搭載した時の断面概略図である。
　以下、本発明の実施の形態について、図面を参照し説明する。
（第１実施形態）
　図１は、本発明の第１実施形態に係る半導体モジュールの断面概略図である。図１は本発明の半導体モジュールを特定の切断線で切断した断面を示すものではなく、制御端子や樹脂封止内部の半導体素子と配線層との接続は図示していない。図２、図３および図４は、本実施形態の半導体モジュール１００の製造工程を示す要部斜視図である。
　本実施形態の半導体モジュール１００は、１枚の金属ベース２に複数の樹脂モールド型の半導体装置１が搭載され、複数の半導体装置１が配線７により電気的に接続されてインバータ回路の主回路などを構成する。本実施形態の半導体モジュール１００において、複数の樹脂モールド型の半導体装置を組み合わせてモジュールを構成する理由は以下である。特に大容量の電力変換用パワーモジュールでは高い絶縁信頼性が要求されることから、ケース内に柔らかいシリコーンゲルなどの封止剤でゲル封止する構成が一般的である。柔軟なゲルは熱ストレスを受けても剥離し難く、半導体素子や端子等の絶縁を確保できるという利点を有するものの、半導体素子の周辺接続部の熱応力を緩和することはできない。一方、樹脂モールドでは硬質な樹脂で半導体素子周囲を覆うことにより半導体素子の周辺接続部のひずみを抑制し、接続信頼性の向上が可能となる。しかしながら、モジュールサイズが大きくなると全体を樹脂でモールドすることが困難であり、十分な絶縁信頼性を確保することが難しい。そのため、本実施形態では、モジュールを構成する回路を複数のユニットに分け、複数個の樹脂モールド型半導体装置で構成することで、絶縁信頼性、接続信頼性を向上させている。また、複数の樹脂モールド型半導体装置を１枚の金属ベースに搭載してモジュールを構成にすることにより、顧客側での実装負担を低減している。
　本実施形態の半導体モジュール１００に用いられる半導体装置１は、絶縁基板３の一方の面に配線層４ａ、他方の面に金属放熱板４ｂが設けられ、配線層４にＩＧＢＴやダイオードなどの半導体素子５がはんだ１０を介して搭載されている。そして、絶縁基板３の半導体素子搭載面が封止樹脂１１によって封止された片面モールド型であり、絶縁基板３の裏面側の金属放熱板４ｂが露出した構成となっている。ここで、絶縁基板３はアルミナや窒化アルミ、窒化珪素等のセラミックからなり、配線層４ａおよび金属放熱板４ｂは、銅やアルミニウム等が用いられる。配線層は必要に応じて表面をニッケル等でめっきを施してから使用しても良い。半導体素子５と配線層４ａを接続する接合材は、はんだに限られず、例えば金属粒子の低温焼結を利用した接合材を用いてもよい。
　金属ベース２には金属放熱板４ｂの形状に対応した複数の開口部２１が設けられている。図２に示したように、金属ベース２の開口部２１に半導体装置１の金属放熱板４ｂがはめ込まれることで、金属ベース２に複数の半導体装置１が搭載される。この際、金属放熱板４ｂよりも絶縁基板３を大きくすることで、開口部２１から半導体装置１が抜け落ちないように構成されている。また、図１に示すように金属放熱板４ｂおよび開口部２１を金属ベース２の半導体装置搭載面側の開口幅が広くなるテーパー形状とすることによっても、半導体装置１が抜け落ちを防止できる。
　次に、図３に示すようにケース１２が金属ベース筐体２に固定する。半導体装置１は半導体素子５の電極や配線層と電気的に接続された外部接続用端子を備えており、この外部用接続用端子と配線７とを接続して複数の半導体装置１の電気的な配線が行われる。その後、ケース１２内を絶縁封止剤８で充填し、配線７の必要部が露出するように蓋９を設けて図１、図４に示す半導体モジュール１００を得る。本実施形態の半導体モジュール１００は、金属ベース２およびケース１２に半導体モジュールを冷却体に固定するためのボルト用貫通孔２３が設けられており、ボルト用貫通孔２３でボルト締めされることによって冷却体に固定される。なお、ボルト用貫通孔２３は金属ベース２とケース１２の配置、形状を変更することで、金属ベース２またはケース１２の一方のみに設ける構成にすることもできる。半導体装置１間の配線後に行う封止に用いる絶縁封止剤８は、シリコーンゲルなどの柔軟な樹脂や、エポキシ樹脂、フェノール樹脂、ウレタン樹脂などの硬質樹脂等を用いることが可能である。上述の通り、樹脂モールド型半導体装置では接続信頼性に優れるが、モールド樹脂と部材間の剥離が生じた場合に絶縁信頼性の低下を招く場合がある。本実施形態の半導体モジュールでは、配線７間の絶縁性確保、モールド型半導体装置の絶縁信頼性向上のために、金属ベース２およびケース（ケース１２および蓋９）で構成される筐体内を絶縁封止剤８で充填する構成を採用している。　
　本実施形態の半導体モジュールによれば、片面モールド型の半導体装置１をベース基板２の開口部２１に搭載することによって、絶縁基板３の裏面の金属放熱板４ｂがベース基板２の裏面側に露出した構造となり、金属放熱板４ｂの裏面が冷却体への設置面となる。その結果、金属放熱板４ｂを直接冷却体に密着させることが可能となり、ＩＧＢＴ等の半導体素子５から冷却体までの放熱経路において、熱伝導率の低いはんだや樹脂接着層などの金属ベースと半導体装置の接合部が存在しないため、高効率での冷却が可能となる。この際、金属ベース２の裏面と金属放熱板４の裏面が同一面になるように構成することが望ましい。また、冷却体の形状等を工夫することで金属放熱板４との密着を確保できれば、金属ベース２の裏面と金属放熱板４の裏面が同一面である必要はない。
　また、本実施形態の半導体モジュールによれば、金属ベースと半導体装置の接合部が放熱経路にないため、稼動時の接合部の熱疲労による劣化の影響を受けにくく、低熱抵抗で信頼性の高い半導体モジュールを提供することができる。
（第２実施形態）
　図５は、本発明の他の半導体装置１と金属ベース筐体２の固定・接続方法に関する第２の実施形態を示す断面概略図である。
　半導体装置１と金属ベース２の締結部は、金属ベース２から半導体装置１が抜け落ちないような構造であれば良く、図１の断面概略図に示したように、半導体装置搭載方向に対し広がった形状となるようにテーパーを設けたり、図５に示すように段差２２を設けて半導体装置１と金属ベース筐体２を固定することが可能である。
　ここで、半導体モジュール１００は図４に示すボルト用貫通孔２３を貫通するようにして、ねじで冷却体(図示せず）に固定される。この際、半導体装置１を冷却体に密着させるように押し付けることにより、半導体装置１からの放熱性が向上する。しかしながら、稼働時に熱ストレス等によって金属ベース２から半導体装置１が浮き上がり、金属放熱板４と冷却体の密着が不十分となる場合がある。これに対して、金属ベース２の開口部と金属放熱板４の側面とを接合材を用いて接合し、締結部６を形成することで半導体装置１の浮き上がりを防止することができる。金属ベース２と半導体装置１の接合には、鉛や錫、銅、銀等を主成分とするはんだや、シリコーン樹脂等からなるシール剤、焼結性の金属粉による接合が可能である。
（第３実施形態）
　図６は、金属ベース２からの半導体装置１の浮き上がりを防止するための他の半導体装置１の固定方法に関する第３の実施形態を示す断面概略図である。図６では、金属ベース２に固定したケースに突起部１２１を設けている。この突起部１２１によって半導体装置１が金属ベース２に押さえつけられるように構成されている。さらに、図４に示したように金属ベース２およびケース１２のボルト用貫通孔２３を貫通するようにして、ねじで冷却体に固定することで、ケース１２には金属ベース側に荷重が加えられた状態となる。その結果、半導体装置１には前記金属ベースに押さえつける力が突起部１２から加えられて、冷却体と半導体装置１の密着性を向上することが可能となる。
　突起部１２１は、半導体装置１の外周部だけでなく、内周部において半導体装置１を押さえるように設けても良い。
（第４実施形態）
　図７は、複数の半導体装置１間を接続する配線７の他の接続方法に関する第４の実施例を示す断面概略図である。
　複数の半導体装置１の間には大きな電流が流れるため、これらを接続する配線部分のインダクタンスを低減することが、半導体モジュール１００の特性向上には望ましい。そこで、本実施形態の半導体モジュール１００では、予め蓋９の内部に半導体装置１間の電気的な接続を行う配線７を設けている。蓋９に設けられた配線７と半導体装置１の外部接続用端子を接続することによって、複数の半導体装置１の電気的な配線が行われる。なお、半導体装置１の外部接続用端子と蓋９の内層配線との接続は、内層配線の接続箇所が露出するように蓋９に開口部を設けることで行われる。
　このように蓋９と配線が一体となった構成を採用することによって、電流により発生する磁界により相互の配線のインダクタスの低減が可能となる。
（第５実施形態）
　図８は、本発明における絶縁基板に形成された金属放熱板４ｂに関する第５の実施形態を示す断面概略図である。
　本実施形態では、冷却体と接する金属放熱板４ｂの厚さを、中央部よりも端部の方が厚くなるように構成している。半導体装置１では中央部の発熱量が高くなる傾向にある。これに対して、本実施形態のように半導体装置１において金属放熱板４ｂの中央部を薄くすることで中央部の熱抵抗が小さくなり、その結果、中央部の熱集中を低減できる。
（第６実施形態）
　図９は、半導体モジュール１００を冷却体３０に搭載した時の断面概略図である。半導体モジュール１００は冷却体３０に搭載されて使用される。稼動時には、半導体装置１の温度が上昇し、冷却体３０と半導体装置１との間に温度差が生じる。このとき、冷却体３０と半導体装置１の金属放熱板４ｂの材質が異なると、両者の温度差および材質の違いによる熱膨張係数の差により、両者の密着面に隙間が生じる可能性がある。そこで、このような隙間を低減するため、半導体装置１の冷却体３０と接する金属放熱板４ｂの材質と、冷却体３０の材質を同一にすることが有効である。このとき、絶縁基板３の両面に設けた配線層４ａと金属放熱板４ｂの材質は同一でも良いし、金属放熱板４ｂのみ冷却体３０と同じ材質にしても良い。
　以上、本発明の実施形態について図面を用いて具体的に説明したが、本発明は上記の実施形態に記載された範囲に限定されるものではなく、趣旨を逸脱しない範囲で変更可能である。
　１　　半導体装置
　２　　金属ベース
　３　　絶縁層
　４ａ　配線層
　４ｂ　金属放熱板
　５　　半導体素子
　６　　締結部
　７　　配線
　８　　絶縁封止剤
　９　　蓋
　１０　はんだ
　１１　封止樹脂
　１２　ケース
　２１　開口部
　２２　段差
　２３　ボルト用貫通孔
　３０　冷却体
　１００　半導体モジュール
　１２１　突起

Claims (8)

  1. 　複数の樹脂モールド型の半導体装置が電気的に接続されて構成される半導体モジュールであって、
    　前記複数の半導体装置が１枚の金属ベースに搭載され、
    　前記複数の半導体装置は、絶縁基板の半導体素子搭載面とは反対側の面に形成された金属放熱板が樹脂モールドから露出した構造であり、
    　前記金属ベースに設けられた開口部に前記半導体装置の前記金属放熱板がはめ込まれ、前記金属放熱板の裏面が冷却体への設置面となることを特徴とする半導体モジュール。
  2. 　請求項１に記載の半導体モジュールにおいて、
    　前記金属ベースとケースで構成され、前記複数の半導体装置を覆う筐体と、
    　前記筐体内の複数の半導体装置を覆うように絶縁封止剤が充填されていることを特徴とする半導体モジュール。
  3. 　請求項２に記載の半導体モジュールにおいて、
    　前記絶縁封止剤がゲル状であることを特徴とする半導体モジュール。
  4. 　請求項１に記載の半導体モジュールにおいて、
    　前記ベース基板の開口部は、半導体装置搭載面の開口幅が広くなるようにテーパーあるいは段差形状となっていることを特徴とする半導体モジュール。
  5. 　請求項１に記載の半導体モジュールにおいて、
    　前記ベース基板の開口部と前記金属放熱板の側面とが接合材により接合されていることを特徴とする半導体モジュール。
  6. 　請求項２に記載の半導体モジュールにおいて、
    　前記ケースは半導体モジュールを冷却体に固定するためのボルト用貫通孔と、前記半導体装置を押さえる突起部を有し、
    　前記突起部は前記ケースがボルト締めされることにより、前記半導体装置を前記金属ベースに押さえつける力を付与する構造であることを特徴とする半導体モジュール。
  7. 　請求項２に記載の半導体モジュールにおいて、
    　前記複数の半導体装置が前記ケースの蓋部分と一体となった配線により接続されていることを特徴とする半導体モジュール。
  8. 　請求項１に記載の半導体モジュールにおいて、
    　前記金属放熱板の厚さは中央部よりも端部の方が厚いことを特徴とする半導体モジュール。
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