KR102005313B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR102005313B1
KR102005313B1 KR1020120087094A KR20120087094A KR102005313B1 KR 102005313 B1 KR102005313 B1 KR 102005313B1 KR 1020120087094 A KR1020120087094 A KR 1020120087094A KR 20120087094 A KR20120087094 A KR 20120087094A KR 102005313 B1 KR102005313 B1 KR 102005313B1
Authority
KR
South Korea
Prior art keywords
chip
heat
semiconductor chip
heat sink
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120087094A
Other languages
English (en)
Korean (ko)
Other versions
KR20130020570A (ko
Inventor
슈지 네고로
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20130020570A publication Critical patent/KR20130020570A/ko
Application granted granted Critical
Publication of KR102005313B1 publication Critical patent/KR102005313B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020120087094A 2011-08-18 2012-08-09 반도체 장치 Active KR102005313B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011178933A JP5779042B2 (ja) 2011-08-18 2011-08-18 半導体装置
JPJP-P-2011-178933 2011-08-18

Publications (2)

Publication Number Publication Date
KR20130020570A KR20130020570A (ko) 2013-02-27
KR102005313B1 true KR102005313B1 (ko) 2019-07-30

Family

ID=47712063

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120087094A Active KR102005313B1 (ko) 2011-08-18 2012-08-09 반도체 장치

Country Status (5)

Country Link
US (1) US8558372B2 (enExample)
JP (1) JP5779042B2 (enExample)
KR (1) KR102005313B1 (enExample)
CN (1) CN102956584B (enExample)
TW (1) TWI529877B (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9006889B2 (en) 2011-11-11 2015-04-14 Skyworks Solutions, Inc. Flip chip packages with improved thermal performance
JP5974454B2 (ja) * 2011-11-14 2016-08-23 イビデン株式会社 電子部品
CN103117275B (zh) * 2013-01-31 2015-08-19 华为技术有限公司 一种芯片封装结构及芯片封装方法
US8987876B2 (en) * 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US20160284624A1 (en) * 2013-03-21 2016-09-29 Nec Corporation Heat sink structure, semiconductor device and heat sink mounting method
JP2015029043A (ja) * 2013-06-26 2015-02-12 京セラ株式会社 電子装置および光モジュール
US9082743B2 (en) 2013-08-02 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC packages with heat dissipation structures
US9583415B2 (en) * 2013-08-02 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Packages with thermal interface material on the sidewalls of stacked dies
US9735082B2 (en) 2013-12-04 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC packaging with hot spot thermal management features
US9754855B2 (en) * 2014-01-27 2017-09-05 Hitachi, Ltd. Semiconductor module having an embedded metal heat dissipation plate
US9330997B1 (en) * 2014-03-14 2016-05-03 Altera Corporation Heat spreading structures for integrated circuits
JP6312527B2 (ja) 2014-05-23 2018-04-18 新日本無線株式会社 放熱板を備えた電子部品の実装構造
JP6457206B2 (ja) * 2014-06-19 2019-01-23 株式会社ジェイデバイス 半導体パッケージ及びその製造方法
FR3023059B1 (fr) 2014-06-25 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre comportant un dissipateur de chaleur
US10685904B2 (en) * 2014-11-21 2020-06-16 Delta Electronics, Inc. Packaging device and manufacturing method thereof
US9818720B2 (en) * 2015-07-02 2017-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method for chip package
US9748184B2 (en) * 2015-10-15 2017-08-29 Micron Technology, Inc. Wafer level package with TSV-less interposer
US10504827B2 (en) * 2016-06-03 2019-12-10 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10182514B2 (en) 2016-06-27 2019-01-15 International Business Machines Corporation Thermal interface material structures
US10062664B2 (en) * 2016-06-30 2018-08-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor packaging device with heat sink
US9859262B1 (en) * 2016-07-08 2018-01-02 Globalfoundries Inc. Thermally enhanced package to reduce thermal interaction between dies
CN106413343B (zh) 2016-09-12 2019-04-26 华为技术有限公司 散热器、散热装置、散热系统及通信设备
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
MY192082A (en) * 2016-12-27 2022-07-26 Intel Corp Interconnect core
US10643920B1 (en) * 2017-03-24 2020-05-05 Juniper Networks, Inc. Lid for semiconductor electronic package
JP2019012714A (ja) * 2017-06-29 2019-01-24 株式会社ディスコ 半導体パッケージの製造方法
US10957611B2 (en) 2017-08-01 2021-03-23 Mediatek Inc. Semiconductor package including lid structure with opening and recess
KR102356999B1 (ko) * 2017-09-26 2022-02-04 한국전자통신연구원 반도체 장치 및 이의 제조 방법
KR102039710B1 (ko) * 2017-10-19 2019-11-01 삼성전자주식회사 유기 인터포저를 포함하는 반도체 패키지
KR20190055662A (ko) * 2017-11-15 2019-05-23 에스케이하이닉스 주식회사 열 재분배 패턴을 포함하는 반도체 패키지
KR102460720B1 (ko) 2017-11-16 2022-10-31 삼성전자주식회사 반도체 소자 패키지를 포함하는 전자 장치
US10775576B2 (en) * 2018-03-01 2020-09-15 Ayar Labs, Inc. Thermal management system for multi-chip-module and associated methods
KR102086364B1 (ko) * 2018-03-05 2020-03-09 삼성전자주식회사 반도체 패키지
WO2019189647A1 (ja) * 2018-03-30 2019-10-03 日本電産エレシス株式会社 回路基板
US10770369B2 (en) * 2018-08-24 2020-09-08 Advanced Semiconductor Engineering, Inc. Semiconductor device package
JP7061949B2 (ja) * 2018-10-24 2022-05-02 ルネサスエレクトロニクス株式会社 半導体装置
US11029475B2 (en) * 2019-04-08 2021-06-08 Cisco Technology, Inc. Frame lid for in-package optics
US11894286B2 (en) * 2019-06-13 2024-02-06 Bae Systems Information And Electronic Systems Integration Inc. Hermetically sealed electronics module with enhanced cooling of core integrated circuit
US11037860B2 (en) 2019-06-27 2021-06-15 International Business Machines Corporation Multi layer thermal interface material
US20210035921A1 (en) 2019-07-30 2021-02-04 Intel Corporation Soldered metallic reservoirs for enhanced transient and steady-state thermal performance
US11830787B2 (en) 2019-08-06 2023-11-28 Intel Corporation Thermal management in integrated circuit packages
US20210043573A1 (en) * 2019-08-06 2021-02-11 Intel Corporation Thermal management in integrated circuit packages
US12007170B2 (en) 2019-08-06 2024-06-11 Intel Corporation Thermal management in integrated circuit packages
US11784108B2 (en) 2019-08-06 2023-10-10 Intel Corporation Thermal management in integrated circuit packages
US11948855B1 (en) * 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US11728282B2 (en) 2019-10-17 2023-08-15 Advanced Semiconductor Engineering, Inc. Package structure, assembly structure and method for manufacturing the same
US12002727B2 (en) * 2020-02-11 2024-06-04 Intel Corporation Barrier structures for underfill containment
US11769710B2 (en) * 2020-03-27 2023-09-26 Xilinx, Inc. Heterogeneous integration module comprising thermal management apparatus
US11774190B2 (en) 2020-04-14 2023-10-03 International Business Machines Corporation Pierced thermal interface constructions
CN111415927A (zh) * 2020-05-19 2020-07-14 华进半导体封装先导技术研发中心有限公司 封装结构及其制备方法
CN212517170U (zh) * 2020-05-30 2021-02-09 华为技术有限公司 一种芯片封装结构及电子设备
WO2022067589A1 (zh) * 2020-09-29 2022-04-07 华为技术有限公司 一种芯片封装和电子设备
JP7524044B2 (ja) * 2020-12-09 2024-07-29 新光電気工業株式会社 放熱板、半導体装置及び放熱板の製造方法
US11676912B2 (en) * 2020-12-23 2023-06-13 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for manufacturing the same
JP7484700B2 (ja) 2020-12-23 2024-05-16 富士通株式会社 半導体装置及び半導体装置の製造方法
US11830785B2 (en) * 2021-10-06 2023-11-28 STATS ChipPAC Pte. Ltd. Package with windowed heat spreader
TWI776747B (zh) * 2021-12-03 2022-09-01 矽品精密工業股份有限公司 電子封裝件及其製法
CN114937660A (zh) * 2022-04-21 2022-08-23 盛合晶微半导体(江阴)有限公司 一种电子封装结构
CN117784325A (zh) * 2022-09-20 2024-03-29 华为技术有限公司 光收发模块及通信设备
US20240105692A1 (en) * 2022-09-23 2024-03-28 Wolfspeed, Inc. Packaged flip chip radio frequency transistor amplifier circuits
WO2025143997A1 (ko) * 2023-12-27 2025-07-03 이종주 브릿지 일체형 로직다이를 갖는 고대역폭 메모리 및 이를 적용하는 패키지

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168560A (ja) * 1999-12-07 2001-06-22 Denso Corp 電子回路ユニット
JP2002289750A (ja) * 2001-03-26 2002-10-04 Nec Corp マルチチップモジュールおよびその放熱構造
JP2007095860A (ja) 2005-09-28 2007-04-12 Nec Electronics Corp 半導体装置
JP2008218669A (ja) 2007-03-02 2008-09-18 Nec Electronics Corp 半導体装置
JP2010034431A (ja) 2008-07-31 2010-02-12 Renesas Technology Corp 半導体装置の製造方法
JP2010258008A (ja) * 2009-04-21 2010-11-11 Sharp Corp 電子部品モジュールおよびその製造方法
JP2011023587A (ja) 2009-07-16 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864732A (ja) * 1994-08-26 1996-03-08 Mitsubishi Electric Corp 半導体集積回路装置
JPH11318695A (ja) * 1998-05-15 1999-11-24 Toshiba Home Techno Corp 家庭用加熱機器
US6275381B1 (en) * 1998-12-10 2001-08-14 International Business Machines Corporation Thermal paste preforms as a heat transfer media between a chip and a heat sink and method thereof
US6888722B2 (en) * 1999-12-30 2005-05-03 Intel Corporation Thermal design for minimizing interface in a multi-site thermal contact condition
JP3960115B2 (ja) * 2001-05-24 2007-08-15 松下電器産業株式会社 携帯用電力増幅器
JP2004172489A (ja) 2002-11-21 2004-06-17 Nec Semiconductors Kyushu Ltd 半導体装置およびその製造方法
US7031162B2 (en) * 2003-09-26 2006-04-18 International Business Machines Corporation Method and structure for cooling a dual chip module with one high power chip
US7995344B2 (en) * 2007-01-09 2011-08-09 Lockheed Martin Corporation High performance large tolerance heat sink
JP5009085B2 (ja) 2007-08-09 2012-08-22 新光電気工業株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168560A (ja) * 1999-12-07 2001-06-22 Denso Corp 電子回路ユニット
JP2002289750A (ja) * 2001-03-26 2002-10-04 Nec Corp マルチチップモジュールおよびその放熱構造
JP2007095860A (ja) 2005-09-28 2007-04-12 Nec Electronics Corp 半導体装置
JP2008218669A (ja) 2007-03-02 2008-09-18 Nec Electronics Corp 半導体装置
JP2010034431A (ja) 2008-07-31 2010-02-12 Renesas Technology Corp 半導体装置の製造方法
JP2010258008A (ja) * 2009-04-21 2010-11-11 Sharp Corp 電子部品モジュールおよびその製造方法
JP2011023587A (ja) 2009-07-16 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
CN102956584A (zh) 2013-03-06
CN102956584B (zh) 2017-03-01
KR20130020570A (ko) 2013-02-27
US8558372B2 (en) 2013-10-15
JP5779042B2 (ja) 2015-09-16
TW201310590A (zh) 2013-03-01
US20130043581A1 (en) 2013-02-21
TWI529877B (zh) 2016-04-11
JP2013042030A (ja) 2013-02-28

Similar Documents

Publication Publication Date Title
KR102005313B1 (ko) 반도체 장치
CN213752684U (zh) 具有竖直热管理的堆叠式硅封装组件
KR100586698B1 (ko) 수직 실장된 반도체 칩 패키지를 갖는 반도체 모듈
US10062665B2 (en) Semiconductor packages with thermal management features for reduced thermal crosstalk
JP6122863B2 (ja) 複数の熱経路を備える積み重ねられた半導体ダイアセンブリ、ならびに関連するシステムおよび方法
US7928590B2 (en) Integrated circuit package with a heat dissipation device
US9721868B2 (en) Three dimensional integrated circuit (3DIC) having a thermally enhanced heat spreader embedded in a substrate
JP6373411B2 (ja) 冗長電気コネクタを有する相互接続構造と、それに関連するシステムおよび方法
KR101550847B1 (ko) 열 분산기를 구비한 멀티-다이 반도체 패키지
US7772692B2 (en) Semiconductor device with cooling member
JP4086068B2 (ja) 半導体装置
TWI506743B (zh) 半導體裝置的熱能管理結構及其製造方法
US20060060963A1 (en) Heat dissipation for chip-on-chip IC packages
US11145566B2 (en) Stacked silicon package assembly having thermal management
CN104882422A (zh) 堆叠封装结构
CN111081649A (zh) 半导体封装
CN105431938A (zh) 改善散热特性的半导体装置
CN105938821B (zh) 热增强的散热器
JP2011035352A (ja) 半導体装置
JP2008016653A (ja) 半導体パッケージ、その製造方法、プリント基板及び電子機器
CN100417312C (zh) 具有改善散热结构的印刷电路板及电子装置
US11973000B2 (en) Heat dissipation plate and semiconductor device
CN116266666A (zh) 天线整合式封装结构
CN120998890A (zh) 堆叠封装结构及其制备方法、电子设备
KR20250118209A (ko) 하이브리드 증기 챔버 덮개

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20120809

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20170724

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20120809

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20181102

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20190418

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20181102

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20190418

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20170724

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20190612

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20190516

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20190418

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20170724

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190724

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190725

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220615

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240619

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20250616

Start annual number: 7

End annual number: 7