TWI523724B - A bonding material, a method for producing the same, and a method of manufacturing the bonding structure - Google Patents
A bonding material, a method for producing the same, and a method of manufacturing the bonding structure Download PDFInfo
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- TWI523724B TWI523724B TW100124779A TW100124779A TWI523724B TW I523724 B TWI523724 B TW I523724B TW 100124779 A TW100124779 A TW 100124779A TW 100124779 A TW100124779 A TW 100124779A TW I523724 B TWI523724 B TW I523724B
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- Prior art keywords
- layer
- bonding material
- based layer
- bonding
- material according
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- 239000000463 material Substances 0.000 title claims description 159
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000011701 zinc Substances 0.000 claims description 249
- 239000004065 semiconductor Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 92
- 239000002184 metal Substances 0.000 claims description 90
- 239000010949 copper Substances 0.000 claims description 71
- 239000011135 tin Substances 0.000 claims description 70
- 229910052725 zinc Inorganic materials 0.000 claims description 51
- 239000011133 lead Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 46
- 229910045601 alloy Inorganic materials 0.000 claims description 44
- 239000000956 alloy Substances 0.000 claims description 44
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 238000005096 rolling process Methods 0.000 claims description 30
- 229910052737 gold Inorganic materials 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 claims description 22
- 229910052718 tin Inorganic materials 0.000 claims description 20
- 229910000765 intermetallic Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000000178 monomer Substances 0.000 claims description 14
- 238000005304 joining Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910018565 CuAl Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 10
- 239000010944 silver (metal) Substances 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 188
- 239000002648 laminated material Substances 0.000 description 112
- 229910000679 solder Inorganic materials 0.000 description 73
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- 238000002844 melting Methods 0.000 description 32
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- 230000003647 oxidation Effects 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
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- 230000008569 process Effects 0.000 description 13
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- 238000007740 vapor deposition Methods 0.000 description 9
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
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- 239000007791 liquid phase Substances 0.000 description 7
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- 229910017944 Ag—Cu Inorganic materials 0.000 description 4
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- 229910018140 Al-Sn Inorganic materials 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 2
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- 230000000052 comparative effect Effects 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- 229910018134 Al-Mg Inorganic materials 0.000 description 1
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- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910016331 Bi—Ag Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 206010011906 Death Diseases 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229910000637 Zinag Inorganic materials 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- 229910007610 Zn—Sn Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000003181 co-melting Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/282—Zn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/38—Selection of media, e.g. special atmospheres for surrounding the working area
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/38—Selection of media, e.g. special atmospheres for surrounding the working area
- B23K35/383—Selection of media, e.g. special atmospheres for surrounding the working area mainly containing noble gases or nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/017—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/165—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon of zinc or cadmium or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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Description
本發明係關於接合材料及其製造方法,以及使用該接合材料之接合構造之製造方法。
對於環境之意識高漲中,開始了被指出對人體有害的鉛之規範。於歐洲,已實施限制汽車中之鉛的使用的ELV指令(End-of Life Vehicles directive,關於廢棄汽車之指令),或禁止電機、電子機器中之鉛的使用之RoHS(Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)指令。在被使用於電機、電子機器之零件的電氣接合的接合材料之銲料中,以往含有鉛。銲料依據熔點,雖被分為高溫、中溫、低溫之3種,中溫銲料以Sn-Ag-Cu系銲料、Sn-Cu系銲料等,低溫銲料以Sn-Bi系銲料、Sn-In系銲料等已經被開發實用化,且符合ELV指令、RoHS指令。可是關於高溫銲料,所使用的是鉛含有率達85wt%以上的高鉛銲料,無鉛之替代材料未被開發,無法符合上述ELV指令、RoHS指令。另外,高鉛銲料其構成成分含有85wt%以上的鉛,和被RoHS指令所禁止的Sn-Pb共晶銲料相比,對於環境的負荷大。因此,高鉛銲料替代材料之開發受到期望。
第1圖係表示高耐熱接合之適用例子。第1圖係表示半導體裝置之構造的剖面圖。第2圖係說明基於再熔化銲料之沖洗的剖面圖。
如第1圖所示般,半導體裝置20係半導體元件1藉由銲料(接合材料)3被接合(黏晶)於導線架2上,藉由導線4,引腳5之內引腳與半導體元件1之電極被打線接合後,藉由密封用樹脂6或惰性氣體被密封製造。
此半導體裝置20係藉由Sn-Ag-Cu系之中溫無鉛銲料被迴銲於印刷基板。Sn-Ag-Cu系無鉛銲料的熔點高至約220℃,在迴銲接合時,為了不使接合(黏晶)都再熔化,於半導體元件1之黏晶上,作為銲料係使用具有290℃以上的熔點之高鉛銲料。
現在已經被開發之Sn-Ag-Cu系銲料等之中溫無鉛銲料,熔點約220℃,在使用於半導體元件1之黏晶的情形,於將半導體元件20迴銲接合於印刷基板時,銲料熔化。接合部周圍被以樹脂模鑄之情形,內部的銲料熔化時,基於熔化時之體積膨脹,如第2圖所示般,產生稱為沖洗之銲料3從密封用樹脂6與導線架2之界面漏出的現象,或者即使不漏出,似乎要漏出般地作用,其結果,凝固後,於銲料中形成大的空孔7而成為不良品。作為代替材料之候補,從熔點面而言,有Au-Sn、Au-Si、Au-Ge等之Au系銲料、Zn、Zn-Al等之Zn系銲料以及Bi、Bi-Cu、Bi-Ag等之Bi系銲料被提出。
但是Au系銲料,其構成成分含有Au在80wt.%以上,從成本面,難於具有泛用性,另外為脆又硬之硬銲料。Bi系銲料,脆又硬,且熱傳導率約9W/m‧K,比現行的高溫銲料低,難於適用於要求高散熱性之功率半導體裝置及功率模組等。另外,Zn以及Zn-Al等之Zn系銲料,雖具有100W/m‧K,之高熱傳導率,但因其容易氧化,在氧氣濃度高的環境中,無法獲得充分的接合。另外,為比較硬的合金,接合時,擔心半導體元件破裂。
作為解決Zn-Al系銲料的課題之不易潤濕以及硬之接合材料,於「專利文獻1」有揭示使用將Zn條、Al條、Zn條予以依序層積,藉由滾軋法予以被覆所製作之被覆材的方法。如依據此,藉由表面的Zn系層,可以確保潤濕性,藉由內層之柔軟的Al系層,賦予應力緩衝能,可以確保接合可靠性。另外,Zn及Al的熔點,分別為420℃、660℃,藉由Zn與Al之反應所產生的Zn-Al共晶(Zn-6Al)的熔點也有382℃,接合材料為高熔點,具有高耐熱性。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2008-126272號公報
[專利文獻2]日本專利特開2009-125753號公報
專利文獻1所記載之技術中,關於將Zn條、Al條、Zn條予以依序層積,藉由滾軋法予以被覆來使用被覆材之接合,藉由以比Al不易氧化之Zn來保護容易氧化的Al,以抑制Al的氧化,來確保作為銲料之潤濕性。可是Zn位於最表面,Zn成為具有氧化膜之狀態。
Zn的氧化膜即使在氫環境中也無法還原去除。於具有氧化膜之狀態下接合半導體元件,於接合部殘留氧化膜。在該情形下,機械強度降低,熱傳導受到阻礙,存在半導體元件的可靠性降低等之顧慮。因此,為了獲得充分的接合,例如需要經過電漿洗淨等工程去除初期的Zn氧化膜後,在壓低氧氣濃度的環境中實施接合。
在該情形,Zn的過度氧化受到抑制,可以達成高可靠性的接合。但是壓低氧氣濃度的接合裝置,在抽真空時需要時間等,功率半導體封裝的量產性降低。電漿洗淨工程也很繁雜。
另一方面,於「專利文獻1」揭示有:在金屬蓋被覆Zn與Al之構造,即金屬蓋/Al/Zn構造。於此種構造中,如上述般,需要壓低氧氣濃度。
於專利文獻2所記載之材料中,於Zn單體或以Zn為主成分,且含有Al之Zn合金所形成的Zn(-Al)系銲料箔的兩面層積Cu等之易還原金屬,成為抑制Zn與Al之氧化的構造。但是,為一種Zn加熱時,Cu等之易還原金屬容易熔入的金屬。因此,一加熱以Cu層保護之Zn(-Al)系銲料箔時,於200℃程度之低溫中,Cu熔入Zn中,成為Zn或Al露出於箔表面。
露出表面之Zn及Al會快速氧化,因Zn及Al氧化膜之影響,銲料的潤濕性及接合性降低。於專利文獻1中,雖然只有Zn露出表面,但在專利文獻2中,形成更為強固的氧化膜之Al也露出,接合性降低很多。
因此,即使使用「專利文獻2」所揭示的接合材料,如不將環境中的氧氣濃度壓低,無法充分地接合。即於由Zn或Zn合金所形成的Zn系銲料表面,形成防止Zn的氧化之易還原金屬保護膜,該保護效果基於200℃程度的低溫加熱,易還原金屬熔入Zn中而消失,有無法防止Zn或Al之氧化的問題。
本發明之課題,在於提供:提升接合性及接合可靠性之接合材料,及使用該接合材料之半導體裝置之製造方法。
於本申請案所揭示發明中,如簡單說明代表性者之概要,則如下述。
(1)一種接合材料,係第1Al系層與第1X系層以此順序被層積於Zn系層的第1主面,其特徵為:前述X系層,係以Cu、Au、Ag或Sn之其中一種為主成分。
(2)一種接合構造之製造方法,其特徵為:於第1被接合構件與第2被接合構件之間,配置(1)之接合材料,藉由加熱前述接合材料,來接合前述第1被接合構件及前述第2被接合構件。
如依據本發明,可以防止接合材之氧化,即使在氧化存在的環境中,也可以進行高可靠性的接合。
另外,藉由依據本發明之接合材所接合的接合構造,可使空孔率低至10%以下,也可以充分確保接合強度。另外,空孔率係如第3圖所示般,被定義為:在身為接合部之銲料3的平面方向,空孔7的全面積被銲料3的平面方向的面積來除者。
以下,依據圖面詳細說明本發明之實施形態。另外,於為了說明實施形態之全部圖面中,對於同一構件,原則上賦予相同符號,省略其之重複說明。
第4圖係表示實施本發明用之形態中之接合材料的剖面圖。第4圖中,接合材料係具有:於中央存在Zn系金屬層101(也單單簡略為Zn、Zn系層)、於其兩面存在Al系金屬層102a、102b(也單單簡略為Al、Al系層)、進而,於其兩面存在X系金屬層103a、103b(X=Cu、Au、Ag、Sn)(也單單簡略為X、X系層)之層構造的層積材。Al系層係以Al為主成分(含有最多的成分)之層,Al為90wt.%以上,換言之,以雜質在10wt.%以下的Al合金(單體亦可)為佳。另外,所為Zn系層係以Zn為主成分,Zn為90wt.%以上,換言之,以雜質在10wt.%以下的Zn合金(單體亦可)為佳。另外,X系層係以Cu、Au、Ag、Sn之其一為主之單體層或合金層。即X系層例如為Cu在90wt.%以上,或Au為90wt.%以上,或Ag為90wt.%以上,或Sn為90wt.%以上等之層。
說明將本發明之X/Al/Zn/Al/X層積材當成接合材之基本原理。首先,以被接合材夾住層積材並予以加熱。層積材的溫度超過380℃時,在層積材的Zn/Al界面引起共經熔化反應,Zn與Al熔化成為Zn-Al熔液。表層的X熔入Zn-Al熔液中,層積材全體熔化。然後Zn-Al-X熔液與被接合材反應而接合。
層積材表面的X作用為Al與Zn的氧化防止用之保護層。作為X系金屬層而選擇Cu、Au、Ag、Sn系金屬的理由,係彼等為易還原金屬的緣故。此處,所謂易還原金屬係指:在含有氫氣等之還原環境中,本身的氧化膜容易還原,以助熔劑、電漿洗淨等之處理可以容易去除氧化膜之金屬。如參考“金屬資料手冊”,日本金屬學會編、改訂2版、丸善、p90等,表示各種元素之氧化容易度的指標之氧化物的標準產生自由能,係為Au>Ag>Cu>Sn>Zn>Al之順序(愈小者,愈容易氧化)。即Zn與Al,氧化物的標準產生自由能非常地小,容易被氧化。對於容易被氧化之Zn與Al,藉由以標準產生自由能比彼等之金屬大的金屬,即X(Au、Ag、Cu、Sn)予以保護,可以防止Zn與Al之氧化。
進而在本發明中,利用X在Zn與Al中,更不容易固熔(不易熔入)於Al之性質。例如,參考“金屬資料手冊”,日本金屬學會編、改訂2版、丸善、p24-29,計算熔入容易度之指標的擴散係數。Cu、Au、Ag、Sn對於380℃之Zn中的擴散係數,分別為2.6×10-14、1.2×10-14、6.0×10-14、1.2×10-14m2/s。另一方面,Cu、Au、Ag、Sn對於A1中的擴散係數,分別為1.2×10-15、4.2×10-15、6.1×10-15、5.4×10-18m2/s,和Zn之情形相比,小一位數以上之值。即從理論上得知Cu、Au、Ag、Sn在Zn與Al中,更不容易熔入Al。
實驗上也確認到:加熱X/Zn-Al合金/X層積材時,X快速熔入Zn中,表面雖然Zn與Al露出,但加熱X/Al/Zn/Al/X層積材後,X幾乎沒有熔入Al中。因此,將X/Al/Zn/Al/X層積材加熱至380℃以上的溫度,直到層積材整體熔化之瞬間,Al/Zn/Al層積材表面經常受到X係金屬層保護。於本發明之構造中,藉由X系層更能抑制Zn與Al之氧化,即使在環境中的氧氣濃度高的情形,X/Al/Zn/Al/X層積材也可以保有良好的潤濕性,發揮作為接合材之優異的性能。在使用於半導體元件之情形,幾乎不會產生空孔地接合。
第4圖中,Zn系層中之Zn的含有量,及Al系層中之Al的含有量、X系層中之X的含有量,以個別為90wt.%~100wt.%為佳。Zn、Al、X設為90wt.%以上的理由,係藉由雜質元素,使得熔化溫度不會上升。
例如,作為雜質元素含有Mn之情形,儘管熔點降低很少,但具有使接合層的硬度變硬之效果,變成半導體元件破裂之原因。但在Ga或Ge、Mg、Sn、Cu等之元素含有10wt.%以下之情形,可以獲得降低熔點之效果。在該情形,半導體元件不易破裂,以10wt.%以下的比例混入之合金亦可。
本發明之X/Al/Zn/Al/X接合材料,雖可以藉由被覆滾軋法、或於被覆滾軋法組合電鍍法或蒸鍍法等來製造,但各手法之適用順序並不會左右作為層積材之銲料的性能。如於後段所敘述般,對於Zn系層、Al系層之層厚,X系層為比較薄之層。因此,Zn系層和Al系層的層積,以適合厚膜之製造的被覆滾軋法來進行更佳。Al系層和X系層之層積雖也可以被覆滾軋法,但也可以使用能夠形成薄的薄膜之電鍍法或蒸鍍法來層積亦可。以下,敘述具體的製造例子。
例如,如第5圖所示般,於Zn系層101之兩側重疊2個Al系層102a、102b,進行被覆滾軋,製作Al/Zn/Al層積材11後,如第6圖所示般,重疊X系層103a、具有由Al/Zn/Al所形成的層構造之層積材11、X系層103b,進行被覆滾軋,可以製造X/Al/Zn/Al/X層積材10。
另外,藉由被覆滾軋法製作Al/Zn/Al層積材11後,如第7圖所示般,將Al/Zn/Al層積材11浸漬於電鍍浴302,藉由於Al表面形成X系電鍍層103,可以製造X/Al/Zn/Al/X層積材10。另外,對於Al表面之電鍍,以藉由著鋅處理進行Zn置換後進行X系電鍍為佳。另外,所謂著鋅處理,係指藉由Zn來置換形成於Al表面的氧化物之處理。藉由著鋅處理形成於Al表面的Zn,於電鍍浴
中被去除。
另外,不用電鍍,如第8圖所示般,於真空中藉由濺鍍去除Al/Zn/Al層積材11表面的Al氧化膜後,藉由蒸鍍X來形成X系層,可以製造X/Al/Zn/Al/X層積材10。
另外,例如藉由被覆滾軋法、電鍍法、或蒸鍍法製作Al系層和X系層被接合的X/Al層積材後,藉由重疊X/Al層積材、Zn系層、X/Al層積材予以被覆滾軋,可以製造X/Al/Zn/Al/X層積材10。同樣地,也可以重疊X/Al層積材、Al/Zn/Al層積材、X/Al層積材來被覆滾軋。另外,在藉由電鍍法於Al系層層積X系層之情形,於Al系層的兩面形成X系層,來作為X/Al/X層積材。在該情形,重疊X/Al/X層積材與Zn系層及X/Al/X層積材予以滾軋時,成為X/Al/X/Zn/X/Al層積材。內部的X熔入鄰接之Zn系層中,作為接合材料並不會產生問題。
另外,重疊X系層、Al系層、Zn系層藉由被覆滾軋法予以接合,製作X/Al/Zn層積材後,以Zn面對面地重疊X/Al/Zn層積材與X/Al/Zn層積材予以被覆滾軋,可以至X/Al/Zn/Al/X層積材。換言之,藉由將於第1Zn系層的單面依第1Al系層和由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第1X系層之順序所層積的第1被覆材之前述第1Zn系層側、及於第2Zn系層的單面依第2Al系層和由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第2X系層之順序所層積的第2被覆材之前述第2Zn系層側予以被覆滾軋,可以形成接合材料。
另外,於X/Al/Zn層積材之間夾住Zn系層,重疊X/Al/Zn層積材、Zn系層、X/Al/Zn層積材予以被覆滾軋,可以製造X/Al/Zn/Al/X層積材10。
進而藉由:將於第1Al系層的單面層積由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第1X系層之第1被覆材之前述第1Al系層側、及於第2Al系層的單面層積由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第2X系層之第2被覆材之前述第2Al系層側來夾持Zn系層,藉由被覆滾軋可以形成接合材料。
另外,即使不將被覆滾軋分割為複數次,重疊X系層、Al系層、Zn系層、Al系層、X系層,一次性地予以被覆滾軋亦可。
如上述般,X/Al/Zn/Al/X構造10不管層積方法、層積順序,可以適用各種方法。層積方法的不同,雖以金屬的結晶粒徑、自然氧化膜的殘存狀況的不同來顯現,但彼等之不同,並不會對作為層積材之銲料的性能帶來影響。因此,即使任何方法,可以製造適合作為銲料之材料。另外,可以於各工程之間,實施適當次數之冷滾軋及洗淨來調整層積材之總厚度。另外,在實施被覆滾軋之情形,滾軋後之層積材的總厚度,雖成為投入前之板材的總厚度的一半以下,但從提高層間的密接度之觀點而言,係較為適當的。
另外,X為Cu及Au之情形,使X/Al/Zn/Al/X的製造條件適當化的情形,可以於X層和Al層間產生Cu-Al金屬間化合物、或者Al-Au金屬間化合物。此處所謂使製造條件適當化,係指X層和Al的界面被加熱之製程存在的情形。具體而言,以滾軋形成X/Al/Zn/Al/X之情形,X層和Al層之界面被加熱。滾軋率大時,界面的溫度上升也高。藉由滾軋界面溫度上升至200℃程度的情形,上述金屬間化合物可以容易地形成。另一方面,藉由蒸鍍或濺鍍形成X層之情形,界面的溫度上升無法期待,也不會有金屬間化合物之形成。
第15圖係表示X為Cu之情形,形成於Cu/Al界面之Cu-Al金屬間化合物之TEM影像。如此,藉由於X/Al界面形成10~300nm程度之厚度的金屬間化合物,化合物層作用為X與Al之擴散阻絕層。因此,比起沒有化合物層之情形,即使是高溫、長時間的加熱,也可以防止Al露出表面的現象。另外,Cu-Al化合物在Zn-Al熔化時,快速地熔入Zn-Al,不會阻礙接合。
另外,關於X/Al/Zn/Al/X層積材之構造,基於層積材熔化時,要使其產生足夠的液相以提升潤濕性之目的,層積材之總厚度以20μm以上為佳。另外,為了降低接合部的熱阻抗,以確保可靠性,層積材的總厚度,以300μm以下為佳。另外,(前述Al系層之合計的膜厚)/(前述Zn系層之膜厚),為1/60~1/3,(前述X系層之膜厚)/(前述Zn系層與前述Al系層之合計的膜厚),以0.0002/1~0.2/1為佳。或在382~420℃的接合溫度範圍內,為了使層積材全體均勻地熔化,Al系層、Zn系層、Al系層之層厚比,需
要使之成為Al:Zn:Al=1:6:1~1:60:1的比率。進而,由熔化組織的均勻性之觀點,Al:Zn:Al=1:8:1~1:30:1的範圍更佳。
另外,X系層為了使具有防止Zn與Al氧化的功能,需要一定以上的厚度。另一方面,X系層雖然熔化於Zn系層與Al系層反應而熔化的Zn-Al合金內,構成Zn-Al-X合金,但以使元素X對Zn-Al合金的硬度或熔點之影響成為最小限度為佳。因此,X系層和Zn系層和Al系層相比,需要較薄。(前述X系層的膜厚)/(前述Zn系層和前述Al系層之合計的膜厚),以0.0002/1~0.2/1為佳。或層厚比成為(Al+Zn+Al):(X+X)=1:0.0002~0.2的比率為佳。進而(Al+Zn+Al):(X+X)=1:0.0005~0.1的範圍更佳。
使用如此製作的X/Al/Zn/Al/X層積材,進行半導體裝置的內部之黏晶。例如如第1圖所示般,於具有:半導體元件1與接合前述半導體元件1之導線架2、及一端成為外部端子之引腳5、及接合前述引腳5的另一端與前述半導體元件1之電極的導線4、及樹脂密封前述半導體元件1及前述導線4之樹脂6之半導體裝置20中,前述半導體元件1與前述導線架2之接合材料3,係使用具有由前述X/Al/Zn/Al/X所形成的層構造之層積材10。
為了藉由Zn系層與Al系層的相互擴散所導致的共晶熔解反應充分發生,接合界面全體得以充分地接合,接合條件設為:接合溫度385℃以上、接合時間2分鐘以上、荷重0.1kPa以上。關於接合環境,設為N2+4%H2還原環境或N2+4%H2+100ppmO2還原環境。如此實施接合之情形,接合構造成為半導體元件/Zn-Al-X合金/導線架。
針對元素X的特徵做說明。X為Cu的情形,層積材之構造成為Cu/Al/Zn/Al/Cu。在將本層積材當成銲料使用之情形,半導體元件和基板被以Zn-Al-Cu合金接合。接合環境在氧氣濃度低的氮氣環境雖也可以接合,但以在含有氫氣的還原環境中接合為佳。在還原環境的情形,Cu表面的自然氧化膜,在加熱時,藉由氫氣被還原。因此,Cu/Al/Zn/Al/Cu層積材成為在沒有氧化皮膜的狀態熔化,可以在作為銲料之潤濕性高的狀態下接合。即可以實現缺陷少之高可靠性的構造。
接著,針對X為Au之情形做說明。在此情形,層積材成為Au/Al/Zn/Al/Au。在將本層積材當成銲料使用之情形,半導體元件和基板被以Zn-Al-Au合金接合。Au為不產生氧化物之元素。因此,接合環境可以自由選擇為氮氣環境、氫氣環境。即使在此種環境下,Au/Al/Zn/Al/Au層積材成為在沒有氧化皮膜之狀態下熔化,能在作為銲料的潤濕性高的狀態接合。即可以實現缺陷少之高可靠性接合構造。另外,Au由於貴的關係,Au/Al/Zn/Al/Au的製造,不是以被覆滾軋,而以藉由蒸鍍或電鍍來形成薄的Au層為佳。
接著,針對X為Ag之情形作說明。在此情形,層積材成為Ag/Al/Zn/Al/Ag。在將本層積材當成銲料使用之情形,半導體元件和基板被以Zn-Al-Ag合金接合。Ag係在室溫雖會產生氧化物,但在約150℃以上之溫度範圍,會自己還原,氧化物分解之金屬。因此,接合環境可以自由地選擇為氮氣環境、氫氣環境等。即使在任何環境下,Ag/Al/Zn/Al/Ag層積材成為在沒有氧化皮膜之狀態熔化,可以在作為銲料之潤濕性高的狀態接合。即可以實現缺陷少之高可靠的接合構造。
最後,針對X為Sn之情形做說明。層積材成為Sn/Al/Zn/Al/Sn。在將本層積材作為銲料使用之情形,半導體元件和基板被以Zn-Al-Sn合金接合。另外,在X為Sn之情形,熔化動作和Cu、Au、Ag之情形不同。Zn、Al、Sn中,Sn的熔點最低,加熱時,Sn在230℃熔化。即Sn在從室溫至230℃之間,不會使Al露出表面,在230℃熔化之時間點,與被接合材達成接合。在該狀態下,加熱至370℃程度時,Zn擴散至Al層中,到達Sn/Al界面為止,作為Zn-Al-Sn合金,層積材全體熔化,成為半導體元件和基板被以Zn-Al-Sn合金接合。Zn-Al-Sn合金的熔點,基於Sn之效果,比Zn-Al合金還低。在Sn之情形,以在氧氣濃度低的氮氣環境或氫氣環境接合為佳。但是為了去除Sn的自然氧化膜,以利用使用助熔劑、電漿洗淨等之去除製程更佳。藉由去除Sn氧化膜,Sn/Al/Zn/Al/Sn層積材成為在沒有氧化皮膜之狀態下熔化,可以在作為銲料之潤濕性高的狀態接合。即可以實現缺陷少之高可靠的接合構造。
進而,在X為Sn之情形,藉由改變加熱方法,可以獲得不同的接合構造。第16圖係表示接合的模式圖。第16(a)圖係表示準備好Sn/Al/Zn/Al/Sn層積材與被接合材之狀態。此接合雖在275~365℃保持1分鐘以上來進行,但在第16圖之例子中,係表示於300℃接合的情形。第16(b)圖係表示以被接合材夾住Sn/Al/Zn/Al/Sn層積材,使溫度上升,於230℃之狀態。於此狀態下,係Sn最初熔化,鄰接的Al也開始熔入Sn中之狀態,且是Sn-Al共晶液相形成之狀態。即此時,被接合材夾住Al/Zn/Al層,被以Zn-Al共晶液相接合。進而使溫度上升,加熱至300℃予以保持時,Zn擴散至Al層,形成Zn固熔於Al之Al固熔體。此時,Al成為Zn固熔50at.%程度之固熔體。被加熱至300℃之當初,Al固熔體和被接合材間,存在有Sn-Al之液相層。此狀態為第16(c)圖。進而保持於300℃時,Sn、Zn也成為Al的固熔體,液相層消失,被接合材成為被以固相之Al的固熔體所接合的狀態。此狀態為第16(d)圖。之後,一冷卻時,成為接合構件內有Sn固熔體、Al固熔體、Zn固熔體等存在的狀態。此狀態為第16(e)圖。第16圖雖係溫度為300℃之情形的例子,但在275℃~365℃之情形,也產生同樣的現象。
第17圖、第18圖係表示Al-Zn-Sn三元狀態圖。雖是Zn的固熔量少之Al固熔體或Sn幾乎不固熔於Zn固熔體,但具有Sn固熔30at.%於Zn固熔50at.%程度於Al之Al固熔體的特徵。第17圖、第18圖雖係各表示280℃、290℃之狀態,但此種Al固熔體在275℃以上產生。即藉由Sn-Al共晶液相之Sn擴散於Zn固熔50at.%程度之Al固熔體層,Sn-Al液相消失。於此時間點,被接合材被以Zn和Sn固熔之Al固熔體接合。另外,Zn層相對地比較厚之情形,有Zn層殘留於接合層中央的情形。之後,將全體冷卻時,Al固熔體相分別變化為Al固熔體、Zn固熔體、Sn固熔體,接合完成。
於此接合方法中,如前述般,比起使層積材全體熔化之接合方法,最大可以降低100℃之接合溫度,可以使附加於半導體元件之負荷變小。本接合法雖可在275℃以上,但實際的接合溫度在290℃以上時,Al固熔體層之Sn固熔量增加,可以使接合時間縮短。另外,析出接合層之柔軟的Sn固熔體會緩和接合層的應力,可以提高接合可靠性。另外,本接合方法之情形,為了使Al不會過與不足的固熔體化,層厚比以Al:Zn:Al=5:1:5~1:2:1之比例為佳。
另外,在X為Sn之情形,為了防止在高濕度環境下中之基於Sn所導致的Zn的粒界腐蝕現象,以添加Mg為有效。因此,也可以使用以10wt.%為上限添加Mg於Al或Zn之Al-Mg合金或Zn-Mg合金。另外,可以不是Sn/Al/Zn/Al/Sn之五層層積材,而做成Sn/Al/Zn/Mg/Zn/Al/Sn之七層層積材亦可。七層構造之情形,Mg層厚以在總厚度的1/10以下為佳。藉由此等之構造,接合溫度可以更為降低,及耐蝕性可以提高。Mg的添加量及Mg層厚在規定以上之情形,熔化後之Zn-Al-Sn-Mg合金脆弱化,會有接合層之可靠性降低的情形。
說明半導體裝置之製造方法。半導體裝置係如前述般,可以藉由將本發明的X/Al/Zn/Al/X層積材當成銲料使用來接合導線架與半導體元件而製造。但是如將X/Al/Zn/Al/X層積材在導線架上加熱,原樣地使其熔化,成為Zn-Al-X合金,Zn-Al露出表面。之後,即使設置半導體元件,也成為介由氧化膜之可靠性低的接合。為了防止此,需要在該層積材熔化前為止,於層積材上設置半導體元件。以加熱前將半導體元件設置於層積材上之狀態來加熱為佳。於層積材熔化後,設置半導體元件之情形,需要藉由加上擦洗處理,即使半導體元件前後左右地搖動之處理,來去除氧化膜之工程。在此情形,導線架側的接合性,也比使用Zn-Al合金銲料的情形還好。
另外,層積材之尺寸(縱×橫),以比半導體元件的尺寸還大為佳。在該情形,接合時不會給予負荷,即以有半導體元件的自重,可以實現良好的接合。在使用比半導體元件還小尺寸之層積材的情形,藉由給予0.1kPa以上之負載,在層積材熔化時,Zn-Al-X合金潤濕廣及於半導體元件的接合面全面,可以沒有問題地接合。
關於半導體元件或基板等之被接合材之素材及表面的金屬化,可以適用Cu、Ni、Au、Ag、Pt、Pd、Ti、TiN、Fe-Ni或Fe-Co等之Fe系合金等各種金屬、合金。但被接合材與熔化的X/Al/Zn/Al/X層積材反應,以在其界面產生金屬間化合物之狀態被接合。產生的金屬間化合物,以具有在高溫不易成長的特徵為佳。原因何在呢?化合物之成長導致機械強度的降低,會使接合可靠性惡化。因此,為了於被接合材表面和Zn-Al-X合金的Al或Zn反應,在高溫產生穩定的化合物,以施以Ni金屬化為佳。
另外,在被接合材表面的金屬化為Ni之情形,Ni本身的氧化成為問題,有損害潤濕性的情形。因此,於Ni之上層積不易氧化的Au或Ag、Pt、Pd亦可。即以在被接合材的表面施以Ni、Ni/Au、Ni/Ag等之金屬化為佳。如被施以此種金屬化,半導體元件即使是Si、SiC、GaAs、CdTe、GaN等任何一種的半導體元件也可以接合。
關於基板,藉由賦予上述之金屬化,對於Cu、Al、42Alloy或貼合CIC(Copper Invar Copper)、或DBC(Direct Bond Copper)、DBA(Direct Bond Aluminum)等之金屬的陶瓷基板(絕緣基板)等任何的構件,都可以實現高可靠性的接合。另外,如詳細說明以本發明的層積材來接合被賦予Ni金屬化之被接合材的情形之接合後的構造,則成為被接合材/Ni/Ni-Al系化合物/Zn-Al-X合金/Ni-Al系化合物/Ni/被接合材。
上述例子,雖針對半導體元件和基板的連接做說明,但此種構成,也可以適用於半導體與引腳、半導體與散熱基板、半導體與導線架、半導體與絕緣基板、及半導體與一般的電極的接合。另外,於上述說明之構成,不限於半導體元件和基板的連接,一般也可以適用於將第1被連接構件和第2被連接構件以本實施例的連接構件予以連接的情形。例如,可以適用於金屬板和金屬板、金屬板和陶瓷
基板等之接合。
另外,藉由被覆滾軋可以做成使本發明之層積材和被接合材一體化之接合材一體型構造。具體而言,也可以接合X/Al/Zn/Al/X層積材10及作為被接合材121之金屬基板(導線架)、金屬貼合陶瓷基板、金屬蓋、散熱用基板等。前述被接合材121係被要求在Zn與Al之共晶合金產生的溫度下,不會熔化之特性,因此,以構成構件的最低熔點為390℃以上為佳。前述被接合材121可以選擇Fe系合金、Al系合金、Cu系合金等。
另外,在提供接合材一體型構造之情形,不需要做成被接合材/X/Al/Zn/Al/X構造,如第9圖所示般,做成被接合材/Zn/Al/X構造便很充分。但是以在被接合材表面施以前述之Ni、Ni/Au、Ni/Ag等之金屬化1212為佳。例如,在金屬化為Ni之情形,其構造成為被接合材母材/Ni/Zn/Al/X構造。加熱本構造時,在382℃以上的溫度,Zn-Al合金熔化,X熔入其中。Zn-Al-X合金的Al形成金屬化1212之Ni與穩定的金屬間化合物層,可以防止被接合材母材1211熔出被接合構件。
如此藉由使層積材一體化,於接合時,可以省略設置被接合材的工程。於本構造中,如前述般,X為自然氧化膜,藉由氫等之還原氣體被還原,另外,不易擴散於Al系層內,可以防止Al之氧化。另外,在成為如第9圖所示之被接合材/Zn/Al/X構造之接合材一體型材料的情形,關於層厚比,以Zn:Al=3:1~60:1的比例為佳,關於
膜厚,以(Zn+Al):X=1:0.0001~0.1為佳。
另外,作為形成如第9圖所示之接合材一體型材料用之接合材料,可以使用Zn/Al/X構造之3層構造的材料,而非如第4圖之5層的材料。於3層構造中,將Zn系層側和例如金屬板被覆接合。
進而要求半導體模組之高強度、高耐熱、高熱傳導的主要接合部全部,可以使用本發明之層積材及接合材料一體型金屬板來接合。即可以製造如第10圖之半導體模組40。藉由本發明之層積材10來接合半導體元件1與絕緣基板41(或接合半導體元件1與接合材料一體型絕緣基板12),且以本發明之層積材10來接合絕緣基板41與散熱用金屬基板431(或接合絕緣基板41與本發明之接合材料一體型散熱用金屬基板12)。
進而作為導線4之替代,使用接合材料一體型金屬板12來接合半導體元件表面的電極和絕緣基板41或成為內部或外部端子之引腳5。關於引腳5,可以不是藉由銲接或超音波接合來接合於絕緣基板41,而是藉由局部地加熱引腳本身,或本發明之接合材料一體型金屬板12之其接合材料部分來接合。藉由做成此種構造,全部的接合部其熔點超過300℃,可以實現高可靠性的半導體模組40。
另外,本發明之層積材料,並不限定於板狀構造。例如可以做成同心圓狀之導線。即將Zn導線當成心材,於其外周層積Al層、於其最外周層積X系層,可以發揮和前述板狀的層積材同樣的耐氧化性能。
以下所示實施例使用的本發明之層積材,係使用藉由被覆滾軋法、或電鍍法、或蒸鍍法所製作的材料。第11圖(表1)係表示所製作的被覆材之構成例。另外,作為本發明之層積材的比較,使用Zn/Al/Zn層積材與Cu/Zn-Al/Cu層積材。Zn/Al/Zn層積材係藉由Zn、Al、Zn之被覆滾軋所製造。Cu/Zn-Al/Cu層積材係藉由Cu、Zn-Al合金、Cu之被覆滾軋所製造。即使以被覆滾軋以外的方法來製造,就材料之作為銲料的特性並無不同,也可以獲得接合性相等之結果。
實施例1~24係針對第11圖(表1)中之層積材No.1~24,檢討潤濕性試驗、接合可否者。第12圖(表2)係表示其結果。關於潤濕性試驗,係將層積材設置於Cu/Ni/Au基板上,以加熱溫度385℃、保持時間3分鐘、環境為N2環境,來調查加熱時之X系層的狀況及潤濕擴散狀況。
至各層積材之熔化為止,X系層殘留於表層之情形,設為○,至加熱中途,X系層熔入Zn或Al中而消失者,設為×。在X系層消失的情形,為Zn或Al氧化,認為不適合作為接合材。X系層是否消失,可以藉由目視來評斷。
另外,在熔化金屬潤濕擴散至各基板上之情形,設為○,在沒有潤濕擴散之情形,設為×。潤濕擴散為作為接合材之必要條件。在潤濕擴散之情形,接合材熔化時,熔化的面積比當初的固體之狀態中之面積還大的情形,設為○,熔化的面積比當初的固體的狀態中之面積還小的情形,設為×。
關於接合可否,使用各材料,如第1圖所示般,進行半導體元件1之黏晶進行評估。此半導體裝置20係具有:半導體元件1、及接合此半導體元件1之導線架2、及一端成為外部端子之引腳5、及接合此引腳5之另一端和半導體元件1的電極之導線4、及樹脂密封半導體元件1及導線4之密封用樹脂6,半導體元件1與導線架2係以接合材料10(具有由X/Al/Zn/Al/X)所形成的層構造之層積材)所接合構成。
於此半導體裝置20之製造上,在施以Ni或Ni/Ag或Ni/Au電鍍之導線架2上供給尺寸為5.5mm四方之接合材料10(Zn/X/Al/X/Zn層積材),層積大小5mm四方之半導體元件1後,以接合溫度385℃以上、接合時間2分鐘以上、無負荷條件,接合環境分別使用N2+10ppmO2環境、N2+100ppmO2環境、N2+4%H2+10ppmO2還原環境、N2+4%H2+100ppmO2還原環境之各別氣體,予以加熱後進行接合。
接合後,以導線4將半導體元件1與引腳5間進行打線接合,於180℃藉由密封用樹脂6進行密封。關於製造的半導體裝置20,藉由超音波探傷來測量接合部的空孔面積率。空孔率係如第3圖所示般,在接合部之銲料3的平面方向,將空孔7的全部面積以接合層之平面方向的面積來除者。接合性在成為半導體裝置獲得一定的可靠性之一般的基準之接合層的空孔率10%以下,半導體元件可以正常的動作之情形,設為○,此以外者,設為×。綜合評估係在任何的接合環境中,接合性都是○之材料,設為○。另外,空孔率超過10%時,藉由溫度循環試驗,裂縫從空孔周邊優先地進展,有可靠性提早降低等之問題。因此,藉由使空孔率減少,可以確保長期可靠性。
以下,表示評估結果。潤濕性試驗的結果,層積材No.1~24,X系層都沒有在加熱中途消失,另外,可以見到潤濕擴散,判定為○。X系層沒有消失的關係,Al可保持直到接合時為止沒有氧化的狀態,可認為潤濕性沒有劣化。另外,針對接合可否之檢討結果,層積材No.1~24在任何環境中,空孔率都在10wt.%以下,且可獲得良好的接合,接合可否判定為○。在詳加調查後,得知在接合層也沒有氧化膜殘留等之缺陷。另外,也不存在半導體元件之裂痕,半導體元件可以正常地動作,綜合判定為○。
另一方面,比較例1、2,係以Zn/Al/Zn被覆材、及Cu/Zn-Al/Cu被覆材針對與上述同樣的潤濕性試驗及接合可否進行檢討者。Zn/Al/Zn被覆材,潤濕性良好。Zn/Al/Zn被覆材推測是以Zn來防止Al之氧化的緣故。Cu/Zn-Al/Cu被覆材推測是以Cu來防止Zn與Al的氧化的緣故。
但是Zn/Al/Zn被覆材及Cu/Zn-Al/Cu被覆材,在熔化後之銲料表面都可見到氧化膜的形成,推測是加熱中氧化。前者為初期的Zn氧化膜成長者,後者係在加熱中,Cu熔入Zn內部,露出表面之Zn氧化的關係。
另外,接合5mm四方的半導體元件後,可以不產生晶片裂痕地接合。但是藉由超音波探傷來測量接合都的空孔,關於Zn/Al/Zn被覆材,在N2+10ppmO2環境下,空孔率成為10%以下,可以獲得良好的接合,評估為○。但是此以外之環境中,空孔率超過10%,評估為×。
另一方面,關於Cu/Zn-Al/Cu被覆材,即使在N2、N2+H2之任一環境中,氧氣濃度如在10ppm以下,可以獲得空孔率10%以下之良好的接合,判定為○。但是氧氣濃度超過100ppm之環境下,空孔率超過10%。推測為Zn與Al在接合時之加熱中氧化,其氧化膜殘留於接合層內。因此,判定為×。
由以上,如依據實施例1~24,藉由將本實施形態中之接合材料10使用為半導體裝置20之黏晶,X系金屬層通過接合製程,經常防止Zn與Al之氧化,加上氧氣濃度低的還原環境,即使氧氣濃度超過100ppm之還原環境中,也可以獲得空孔少的良好之接合。即本發明之層積材,可說是耐氧化性優異之銲接材料。
於實施例25中,使用第11圖(表1)所記載之本發明的層積材No.1~24來製造半導體裝置20。基本的實施內容和實施例1~24相同,對於大小為5mm四方的半導體元件1,以4.5mm四方供給層積材10予以接合。那時,給予荷重0.1kPa以上,藉由加熱來實施接合。以和實施例1~24同樣的基準進行評估,層積材No.1~24和接合環境無關,空孔率都在10%以下,可以獲得良好的接合。得知即使供給比半導體元件1面積還小的材料,藉由在接合時施加荷重,銲接材料會潤濕擴散於半導體元件全面。
實施例26係使用第13圖(表3)所示構成之層積材料No.25~48,來製造需要第14圖所示氣密密封之半導體裝置。具體而言,如第9圖所示般,於金屬板1211(金屬蓋)施以Ni、Ni/Au、Ni/Ag之其一的電鍍1212後,被覆Zn/Al/X層積材122,來製造金屬板/金屬化/Zn/Al/X構造12。第13圖(表3)所示層積材料,係表示藉由被覆滾軋金屬板與Zn/Al/X予以接合後之Zn、Al、X個別之厚度。
如第14圖所示般,半導體元件1和模組基板51係於使用層積材料No.1~24進行接合後,藉由導線4連接半導體元件1與引腳5。之後,設置含Zn/Al/X之金屬板52,於接合溫度385℃以上420℃以下、接合時間2分鐘以上、荷重0.1kPa之條件下,接合環境為N2+10ppmO2環境、N2+100ppmO2環境、N2+4%H2+10ppmO2還原環境、N2+4%H2+100ppmO2還原環境、或置換為個別之環境後,予以抽真空之環境下,予以加熱來接合。其結果為,在任何之環境中,都可以獲得空孔率在10%以下之良好的接合,可以實現可靠性高之氣密密封構造。
實施例27係使用第13圖(表3)所示構成之接合材料一體型金屬板,來製造第1圖所示之半導體裝置者。和實施例1~25不同,為被覆第9圖所示之金屬板1211(導線架)與Ni層1212與Zn/Al/X層積材122,來製造由金屬板/Ni/Zn/Al/X構造所形成之含層積材料的導線架12。Ni層1211即使是藉由於金屬板進行電鍍所形成,也可以獲得同樣的效果。第13圖(表3)所示層積材料係表示藉由被覆滾軋來接合金屬板與Ni與Zn/Al/X後之Zn、Al、X個別之厚度者。Ni層1212係具有防止Al與導線架母材1211之金屬性反應過度進行的功能。
於如此準備之含接合材料導線架12上設置半導體元件1,以接合溫度385℃以上、接合時間2分鐘以上、荷重0.1kPa之條件,接合環境為N2+10ppmO2環境、N2+100ppmO2環境、N2+4%H2+10ppmO2還原環境、N2+4%H2+100ppmO2還原環境予以加熱來接合。其結果為,即使在任何一種的環境中,都可以獲得空孔率在10%以下之良好的接合。
實施例28係使用實施例1~24來製作和第1圖基本上相同的半導體裝置之例子。如第1圖所示般,以和實施例1~24相同的方法接合半導體元件1與導線架2後,在半導體元件1和引腳5之連接上不使用導線4,而以使本發明之接合材一體化之薄板12來接合該部位者。
具體而言,如第9圖所示般,準備於由Al或Cu所形成的金屬板1211藉由被覆滾軋層積Ni條、Zn條、Al條、X條之材料12,及於Al或Cu電鍍Ni之構件121藉由被覆滾軋層積Zn/Al/X層積材122之材料12。將該構件12設置於半導體元件1上面的電極與引腳5上,藉由雷射加熱裝置來點加熱該構件12,局部性地引起Zn-Al共晶熔解反應,獲得電極部與引腳部之連接。
電極部及引腳部之表面金屬化,以Ni或Ni/Au或Ni/Ag為佳。連接電極與引腳部後,將全體予以模鑄,獲得第1圖之半導體裝置20。藉由本發明的層積材所連接的電極部與引腳部,其個別之接合都可以獲得空孔率在10%以下的良好之接合狀態。即使實施溫度循環試驗,該部位的皸裂進展十分緩慢,可以實現高可靠性的接合部。
實施例29係製造如第10圖所示之半導體模組40者。半導體元件1之連接,其銲料3a係使用本發明之層積材No.1~21來接合黏貼金屬之陶瓷基板41(絕緣基板)者。進而使用作為銲料3b之本發明的層積材No.22~24來接合達成使半導體元件1動作時的熱散逸功能的散熱用金屬板431與前述絕緣基板41,以製造半導體模組40。以下具體地做說明。
說明功率模組之組裝工法。功率模組一般係以銲料3a接合半導體元件1與絕緣基板41後,以別的銲料3b來接合絕緣基板41與散熱用金屬板431所製造。此時,由於接合絕緣基板41與散熱用金屬板431時之加熱,接合半導體元件1與絕緣基板41之銲料3a再熔化時,模組的可靠性降低。為了防止銲料3a之再熔化,銲料3b需要採用熔點比銲料3a還低的材料。
因此,銲料3a適用接合後熔點大約為380℃之層積材No.1~21,和實施例1~21相同地,以接合溫度382℃以上、保持時間2分鐘以上、無荷重、N2+4%H2環境,接合半導體元件和施以Ni電鍍之絕緣基板41 Ni/Cu/Si3N4/Cu/Ni,獲得構造體42。進而,藉由散熱用金屬板之Cu/Ni基板431與構造體42,夾入層積材No.22~24,以接合溫度370℃、保持時間2分鐘、無荷重、N2+4%H2環境予以接合,獲得構造體43。層積材No.22~24基於Sn的效果,即使是接合溫度在382℃以下也可以接合。因此,構造體42的Zn-Al-X接合部10不會再熔化地接合。關於如此製造的構造體43,銲接引腳5,且以導線4來打線接合半導體元件1上面的電極與絕緣基板41上的金屬電路412或引腳5,獲得半導體模組40。測量如此製造的半導體模組40之各接合部的空孔率的結果,得知任何部位都在10%以下,可以獲得高可靠性的構造。
於第11圖所記載之各種層積材中,準備No.2及No.14之層積材,及以與No.2及No.14相同的層構成,於Cu/Al界面及Au/Al界面使產生金屬間化合物層之No.2’及No.14’材。將全部的層積材在熔點以下之370℃加熱保持。其結果為,表層的Cu或Au消失為止之時間,No.2為10分鐘,No.14為2分鐘,No.2’為20分鐘,No.14’為4分鐘。任何一種在實際的接合製程中,表層殘存有足夠的時間,耐氧化性沒有問題。使產生金屬間化合物之No.2’及No.14’,表層的殘存時間約2倍,即使在加熱速度極端慢之情形,Zn、Al也不會氧化,可以進行接合。另外,將No.2’、No.14’材加熱至382℃以上,使層積材全體熔化之情形,界面的金屬間化合物,熔入Zn-Al浴中,得知不會使接合性惡化。
使用第19圖所記載之Sn/Al/Zn/Al/Sn層積材,接合半導體元件與導線架,製造第1圖所示之半導體裝置20。接合條件設為接合溫度300℃、保持時間5分鐘、荷重1kPa、N2環境。其結果為,接合溫度雖在Zn-Al共晶點以下,但Sn在低溫熔化,可以接合。另外,可以實現空孔率為10%以下之接合構造。
藉由被覆滾軋製造第11圖所記載之層積材。將製造的被覆材加工為1.0mm寬的帶狀,捲繞於捲軸。將本帶狀材料搭載於黏晶機,實施對於導線架之接合。具體而言,於加熱為382℃以上之導線架上,使帶狀的被覆材接觸、熔化,對導線架上供給Zn-Al-X銲料。接著,經過以稱為拍擊器之長方形的模具來扣擊熔化銲料之製程,藉由筒夾於銲料上搭載晶片。晶片搭載時,導入稱為洗滌之使晶片前後左右搖動的製程。於本製程中,設環境中的氧氣濃度在100ppm以下,產生的微量之Zn、Al氧化膜,可以藉由拍擊及洗滌製程來去除。因此,空孔率成為10%以下,可以獲得良好的接合。另一方面,作為比較,將Zn-Al合金加工為帶狀,以同樣的製程嘗試接合。但是Zn-Al的初期氧化膜非常地堅固,以拍擊及洗滌之製程無法去除氧化膜。因此,接合部的空孔率超過30%,接合成為不良。
以上,雖具體說明依據由本發明者所完成之發明的實施形態,但本發明並不限定於前述實施形態,在不脫離其要旨之範圍內,不用說可以有種種變更可能。
即在上述說明中,關於本發明之適用,雖以一般形狀的半導體裝置之黏晶材料、打線接合材料、密封用材料、絕緣基板的接合材等為例做說明,此外,也可以適用於各種構造的接合材料。作為適用例子,可舉:交流發電機用二極體、IGBT模組、RF模組等之前端模組、汽車用功率模組、LED、鋰離子電池等之保護電路用MOSFET、DBC或DBA基板等。另外,也可以適用為Al合金用之焊劑或銅焊薄片。
1...半導體元件
2...導線架
3、3a、3b...銲料
4...導線
5...引腳
6...密封用樹脂
7...空孔
10...X/Al/Zn/Al/X層積材
101...Zn系金屬層
102、102a、102b...Al系金屬層
103、103a、103b...X系金屬層
11...Al/Zn/Al層積材
12...接合材料一體型金屬板
121...金屬板(被接合材)
122...Zn/Al/X層積材
1211...被接合材(金屬板)
1212...被接合材表面金屬化
20...半導體裝置
301...滾輪
302...電鍍浴
303...濺鍍裝置
304...蒸鍍裝置
40...半導體模組
41...絕緣基板
411...陶瓷板
412...陶瓷板表面之金屬板
42...半導體元件與絕緣基板之接合體
43...半導體元件與絕緣基板與散熱金屬板之接合體
431...散熱用金屬板
50...密封構造半導體裝置
51...模組基板
52...含接合材金屬蓋
521...金屬蓋
第1圖係表示半導體裝置之構造圖。
第2圖係說明在第1圖之半導體裝置中,基於再熔化銲料所導致之沖洗及因此所形成的空孔圖。
第3圖係表示空孔率之定義的接合部之平面圖。
第4圖係表示實施本發明用之形態中的五層層積接合材料的剖面圖。
第5圖係說明實施本發明用之形態中,以被覆滾軋來製造Al/Zn/Al三層層積構造之情形中之被覆滾軋圖。
第6圖係說明實施本發明用之形態中,以三層層積材和X系金屬條之被覆滾軋來製作X/Al/Zn/Al/X五層層積材之情形中之被覆滾軋圖。
第7圖係說明實施本發明用之形態中,以三層層積材之X系金屬電鍍來製作X/Al/Zn/Al/X五層層積材之情形中之電鍍工程圖。
第8圖係說明實施本發明用之形態中,以去除三層層積材之濺鍍所形成的氧化膜之工程及以X系金屬之蒸鍍所形成之膜來製造X/Al/Zn/Al/X五層層積材之情形中之薄膜形成工程圖。
第9圖係表示實施本發明用之形態中,接合被接合金屬板與Zn/Al/X層積材之接合材一體型金屬板的剖面圖。
第10圖係說明實施本發明之形態中,半導體裝置(半導體模組)之構造圖。
第11圖係表示表1者,為表示本發明之接合材料的構成例表。
第12圖係表示表2者,為表示對於表1所表示的層積材料及比較材,實施潤濕性試驗、接合試驗之接合材料的評價結果表。
第13圖係表示表3者,為表示本發明之接合材料一體型金屬板的接合材側之構成例表。
第14圖係說明實施本發明之形態中,需要密封之半導體裝置的構造圖。
第15圖係表示於Cu層及Al層之間形成有CuAl系金屬間化合物層之狀態的剖面圖。
第16圖係表示實施本發明之形態中,將Sn/Al/Zn/Al/Sn五層層積材加熱保持在275~365℃予以接合之情形的接合過程之樣子的接合模式圖。
第17圖係280℃中之Al-Cu-Sn三元狀態圖。
第18圖係290℃中之Al-Cu-Sn三元狀態圖。
第19圖係表示表4者,為表示本發明之接合材料的構成例表。
10...X/Al/Zn/Al/X層積材
11...Al/Zn/Al層積材
101...Zn系金屬層
102a、102b...Al系金屬層
103a、103b...X系金屬層
Claims (27)
- 一種接合材料,係於由含有以Zn(鋅)為主成分之金屬所形成的Zn系層的第1主面含有以Al(鋁)為主成分之金屬所形成的第1Al系層與第1X系層,以此順序被層積的接合材料,其特徵為:前述X系層,係由以Cu(銅)、Au(金)、Ag(銀)或Sn(錫)之其中一種為主成分之金屬所形成。
- 如申請專利範圍第1項所記載之接合材料,其中,由於和前述Zn系層之第1主面相反側的第2主面含有以Al為主成分之金屬所形成的第2Al系層和第2X系層,係以此順序被層積,前述第2 X系層,係由以Cu(銅)、Au(金)、Ag(銀)或Sn(錫)之其中一種為主成分之金屬所形成。
- 如申請專利範圍第1項所記載之接合材料,其中,和前述Zn系層之第1主面相反側之第2主面,係被接合於基板。
- 如申請專利範圍第1項所記載之接合材料,其中,前述Zn系層,係以含有Zn90~100wt.%之Zn為主成分之單體層或合金層。
- 如申請專利範圍第2項所記載之接合材料,其中,前述第1或第2Al系層,係以含有Al90~100wt.%之Al為主成分之單體層或合金層。
- 如申請專利範圍第2項所記載之接合材料,其中,前述第1或第2X系層,係以含有Cu90~100wt.%之Cu為 主成分之單體層或合金層。
- 如申請專利範圍第2項所記載之接合材料,其中,前述第1或第2X系層,係以含有Au90~100wt.%之Au為主成分之單體層或合金層。
- 如申請專利範圍第2項所記載之接合材料,其中,前述第1或第2X系層,係以含有Ag90~100wt.%之Ag為主成分之單體層或合金層。
- 如申請專利範圍第2項所記載之接合材料,其中,前述第1或第2X系層,係以含有Sn90~100wt.%之Sn為主成分之單體層或合金層。
- 如申請專利範圍第1~9項中任一項所記載之接合材料,其中,(前述Al系層之合計的膜厚)/(前述Zn系層之膜厚)為1/60~1/3,(前述X系層之膜厚)/(前述Zn系層與前述Al系層的合計膜厚)為0.0002/1~0.2/1。
- 如申請專利範圍第1~9項中任一項所記載之接合材料,其中,(前述X系層之膜厚)/(前述Zn系層與前述Al系層之合計的膜厚)為0.0002/1~0.2/1。
- 一種接合材料之製造方法,其特徵為:藉由將於第1Zn系層之單面依第1Al系層及以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第1X系層之順序予以層積之第1被覆材的前述第1Zn系層側,及於第2Zn系層之單面依第2Al系層及以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第2X系層之順序予以層積之第2被覆材的前述第2Zn系層側予以被覆滾軋來形成 接合材料。
- 一種接合材料之製造方法,其特徵為:藉由於第1Al系層之單面層積由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第1X系層之第1被覆材的前述第1Al系層側,及於第2Al系層之單面層積由以Cu、Au、Ag或Sn之其一為主成分之金屬所形成的第2X系層之第2被覆材的前述第2Al系層側來夾持Zn系層,且藉由被覆滾軋來形成接合材料。
- 一種接合材料之製造方法,其特徵為:於第1被接合構件和第2被接合構件之間,配置申請專利範圍第1項所記載之接合材料,藉由加熱前述接合材料,來接合前述第1被接合構件與前述第2被接合構件。
- 如申請專利範圍第14項所記載之接合構造之製造方法,其中,前述加熱條件,係於275℃至365℃中保持1分鐘以上,之後,使接合構造的溫度降低。
- 如申請專利範圍第14項所記載之接合構造之製造方法,其中,前述第1被接合構件為半導體元件,前述第2接合構件為導線架、絕緣基板、導線或電極。
- 如申請專利範圍第2項所記載之接合材料,其中,於前述第1X系層與前述第1Al系層之間,或於前述第2X系層與前述第2Al系層之間,形成有由CuAl所組成之金屬間化合物。
- 如申請專利範圍第2項所記載之接合材料,其中,於前述第1X系層與前述第1Al系層之間,或於前述 第2X系層與前述第2Al系層之間,形成有由AuAl所組成之金屬間化合物。
- 如申請專利範圍第2項所記載之接合材料,其中,於將前述第1Al系層與前述Zn系層與前述第2Al系層之膜厚比設為(第1Al系層膜厚):(Zn系層膜厚):(第2Al系層膜厚)之情形,則(第1Al系層膜厚):(Zn系層膜厚):(第2Al系層膜厚)=5:1:5至1:2:1。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,前述第1Al系層,係以含有Al90~100wt.%之Al為主成分之單體層或合金層。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,前述第1X系層,係以含有Cu90~100wt.%之Cu為主成分之單體層或合金層。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,前述第1X系層,係以含有Au90~100wt.%之Au為主成分之單體層或合金層。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,前述第1X系層,係以含有Ag90~100wt.%之Ag為主成分之單體層或合金層。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,前述第1X系層,係以含有Sn90~100wt.%之Sn為主成分之單體層或合金層。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,於前述第1X系層與前述第1Al系層之間,形 成有由CuAl所組成之金屬間化合物。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,於前述第1X系層與前述第1Al系層之間,形成有由AuAl所組成之金屬間化合物。
- 如申請專利範圍第1項或第3項所記載之接合材料,其中,於將前述第1Al系層與前述Zn系層之膜厚比設為(第1Al系層膜厚):(Zn系層膜厚)之情形,則(第1Al系層膜厚):(Zn系層膜厚)=5:1至1:2。
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- 2011-07-28 CN CN201180025835.7A patent/CN102917835B/zh not_active Expired - Fee Related
- 2011-07-28 US US13/700,294 patent/US9393645B2/en not_active Expired - Fee Related
- 2011-07-28 WO PCT/JP2011/067335 patent/WO2012029470A1/ja active Application Filing
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JP2012071347A (ja) | 2012-04-12 |
WO2012029470A1 (ja) | 2012-03-08 |
CN102917835A (zh) | 2013-02-06 |
US20130256390A1 (en) | 2013-10-03 |
JP5601275B2 (ja) | 2014-10-08 |
TW201213036A (en) | 2012-04-01 |
CN102917835B (zh) | 2015-07-01 |
US9393645B2 (en) | 2016-07-19 |
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