TWI521702B - Often open the lack of type MOS transistor - Google Patents
Often open the lack of type MOS transistor Download PDFInfo
- Publication number
- TWI521702B TWI521702B TW100109362A TW100109362A TWI521702B TW I521702 B TWI521702 B TW I521702B TW 100109362 A TW100109362 A TW 100109362A TW 100109362 A TW100109362 A TW 100109362A TW I521702 B TWI521702 B TW I521702B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductivity type
- low
- region
- type
- impurity region
- Prior art date
Links
- 239000012535 impurity Substances 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010076366A JP2011210901A (ja) | 2010-03-29 | 2010-03-29 | デプレッション型ｍｏｓトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201203548A TW201203548A (en) | 2012-01-16 |
| TWI521702B true TWI521702B (zh) | 2016-02-11 |
Family
ID=44655390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100109362A TWI521702B (zh) | 2010-03-29 | 2011-03-18 | Often open the lack of type MOS transistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9013007B2 (enExample) |
| JP (1) | JP2011210901A (enExample) |
| KR (1) | KR101781220B1 (enExample) |
| CN (1) | CN102208445B (enExample) |
| TW (1) | TWI521702B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6095927B2 (ja) * | 2012-09-27 | 2017-03-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体集積回路装置 |
| US9478571B1 (en) * | 2013-05-24 | 2016-10-25 | Mie Fujitsu Semiconductor Limited | Buried channel deeply depleted channel transistor |
| EP3528288B1 (en) * | 2013-06-20 | 2020-08-26 | Stratio, Inc. | Gate-controlled charge modulated device for cmos image sensors |
| US9559203B2 (en) * | 2013-07-15 | 2017-01-31 | Analog Devices, Inc. | Modular approach for reducing flicker noise of MOSFETs |
| CN114551595B (zh) * | 2020-11-20 | 2023-10-31 | 苏州华太电子技术股份有限公司 | 应用于射频放大的沟道掺杂调制rfldmos器件及制法 |
| JP2022108157A (ja) * | 2021-01-12 | 2022-07-25 | キオクシア株式会社 | 半導体装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4951879A (enExample) * | 1972-09-20 | 1974-05-20 | ||
| US4212683A (en) * | 1978-03-27 | 1980-07-15 | Ncr Corporation | Method for making narrow channel FET |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
| JPH0369167A (ja) * | 1989-08-08 | 1991-03-25 | Nec Corp | 埋め込み型ｐチャネルｍｏｓトランジスタ及びその製造方法 |
| KR960008735B1 (en) * | 1993-04-29 | 1996-06-29 | Samsung Electronics Co Ltd | Mos transistor and the manufacturing method thereof |
| KR100189964B1 (ko) * | 1994-05-16 | 1999-06-01 | 윤종용 | 고전압 트랜지스터 및 그 제조방법 |
| US5712501A (en) * | 1995-10-10 | 1998-01-27 | Motorola, Inc. | Graded-channel semiconductor device |
| JPH10135349A (ja) * | 1996-10-25 | 1998-05-22 | Ricoh Co Ltd | Ｃｍｏｓ型半導体装置及びその製造方法 |
| JP2001352057A (ja) * | 2000-06-09 | 2001-12-21 | Mitsubishi Electric Corp | 半導体装置、およびその製造方法 |
| KR100343472B1 (ko) * | 2000-08-31 | 2002-07-18 | 박종섭 | 모스 트랜지스터의 제조방법 |
| JP3865233B2 (ja) * | 2002-08-19 | 2007-01-10 | 富士通株式会社 | Ｃｍｏｓ集積回路装置 |
| US6887758B2 (en) * | 2002-10-09 | 2005-05-03 | Freescale Semiconductor, Inc. | Non-volatile memory device and method for forming |
| KR100540341B1 (ko) * | 2003-12-31 | 2006-01-11 | 동부아남반도체 주식회사 | 반도체 소자 제조방법 |
-
2010
- 2010-03-29 JP JP2010076366A patent/JP2011210901A/ja not_active Withdrawn
-
2011
- 2011-03-18 TW TW100109362A patent/TWI521702B/zh not_active IP Right Cessation
- 2011-03-28 US US13/065,674 patent/US9013007B2/en not_active Expired - Fee Related
- 2011-03-28 KR KR1020110027639A patent/KR101781220B1/ko not_active Expired - Fee Related
- 2011-03-29 CN CN201110086411.3A patent/CN102208445B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011210901A (ja) | 2011-10-20 |
| CN102208445A (zh) | 2011-10-05 |
| TW201203548A (en) | 2012-01-16 |
| US20110233669A1 (en) | 2011-09-29 |
| KR20110109948A (ko) | 2011-10-06 |
| CN102208445B (zh) | 2016-03-30 |
| US9013007B2 (en) | 2015-04-21 |
| KR101781220B1 (ko) | 2017-09-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |