KR101781220B1 - 디프레션형 ｍｏｓ 트랜지스터를 갖는 반도체 장치 - Google Patents

디프레션형 ｍｏｓ 트랜지스터를 갖는 반도체 장치 Download PDF

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Publication number
KR101781220B1
KR101781220B1 KR1020110027639A KR20110027639A KR101781220B1 KR 101781220 B1 KR101781220 B1 KR 101781220B1 KR 1020110027639 A KR1020110027639 A KR 1020110027639A KR 20110027639 A KR20110027639 A KR 20110027639A KR 101781220 B1 KR101781220 B1 KR 101781220B1
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South Korea
Prior art keywords
type
impurity region
region
mos transistor
source
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Expired - Fee Related
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KR1020110027639A
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English (en)
Korean (ko)
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KR20110109948A (ko
Inventor
히로후미 하라다
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에스아이아이 세미컨덕터 가부시키가이샤
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Publication of KR20110109948A publication Critical patent/KR20110109948A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020110027639A 2010-03-29 2011-03-28 디프레션형 ｍｏｓ 트랜지스터를 갖는 반도체 장치 Expired - Fee Related KR101781220B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010076366A JP2011210901A (ja) 2010-03-29 2010-03-29 デプレッション型ｍｏｓトランジスタ
JPJP-P-2010-076366 2010-03-29

Publications (2)

Publication Number Publication Date
KR20110109948A KR20110109948A (ko) 2011-10-06
KR101781220B1 true KR101781220B1 (ko) 2017-09-22

Family

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Family Applications (1)

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KR1020110027639A Expired - Fee Related KR101781220B1 (ko) 2010-03-29 2011-03-28 디프레션형 ｍｏｓ 트랜지스터를 갖는 반도체 장치

Country Status (5)

Country Link
US (1) US9013007B2 (enExample)
JP (1) JP2011210901A (enExample)
KR (1) KR101781220B1 (enExample)
CN (1) CN102208445B (enExample)
TW (1) TWI521702B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095927B2 (ja) * 2012-09-27 2017-03-15 エスアイアイ・セミコンダクタ株式会社 半導体集積回路装置
US9478571B1 (en) * 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
JP6326487B2 (ja) * 2013-06-20 2018-05-16 ストレイティオ， インコーポレイテッドＳｔｒａｔｉｏ， Ｉｎｃ． Ｃｍｏｓ画像センサ用のゲート制御型電荷変調デバイス
US9559203B2 (en) * 2013-07-15 2017-01-31 Analog Devices, Inc. Modular approach for reducing flicker noise of MOSFETs
CN114551595B (zh) * 2020-11-20 2023-10-31 苏州华太电子技术股份有限公司 应用于射频放大的沟道掺杂调制rfldmos器件及制法
JP2022108157A (ja) * 2021-01-12 2022-07-25 キオクシア株式会社 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4951879A (enExample) * 1972-09-20 1974-05-20
US4212683A (en) * 1978-03-27 1980-07-15 Ncr Corporation Method for making narrow channel FET
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
JPH0369167A (ja) * 1989-08-08 1991-03-25 Nec Corp 埋め込み型ｐチャネルｍｏｓトランジスタ及びその製造方法
KR960008735B1 (en) * 1993-04-29 1996-06-29 Samsung Electronics Co Ltd Mos transistor and the manufacturing method thereof
KR100189964B1 (ko) * 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
US5712501A (en) * 1995-10-10 1998-01-27 Motorola, Inc. Graded-channel semiconductor device
JPH10135349A (ja) * 1996-10-25 1998-05-22 Ricoh Co Ltd Ｃｍｏｓ型半導体装置及びその製造方法
JP2001352057A (ja) * 2000-06-09 2001-12-21 Mitsubishi Electric Corp 半導体装置、およびその製造方法
KR100343472B1 (ko) * 2000-08-31 2002-07-18 박종섭 모스 트랜지스터의 제조방법
JP3865233B2 (ja) * 2002-08-19 2007-01-10 富士通株式会社 Ｃｍｏｓ集積回路装置
US6887758B2 (en) * 2002-10-09 2005-05-03 Freescale Semiconductor, Inc. Non-volatile memory device and method for forming
KR100540341B1 (ko) * 2003-12-31 2006-01-11 동부아남반도체 주식회사 반도체 소자 제조방법

Also Published As

Publication number Publication date
TWI521702B (zh) 2016-02-11
US9013007B2 (en) 2015-04-21
TW201203548A (en) 2012-01-16
JP2011210901A (ja) 2011-10-20
CN102208445A (zh) 2011-10-05
KR20110109948A (ko) 2011-10-06
CN102208445B (zh) 2016-03-30
US20110233669A1 (en) 2011-09-29

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