TWI521583B - 半導體晶圓之載體接合及分離之製程 - Google Patents

半導體晶圓之載體接合及分離之製程 Download PDF

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TWI521583B
TWI521583B TW101143360A TW101143360A TWI521583B TW I521583 B TWI521583 B TW I521583B TW 101143360 A TW101143360 A TW 101143360A TW 101143360 A TW101143360 A TW 101143360A TW I521583 B TWI521583 B TW I521583B
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semiconductor wafer
carrier
adhesive
coating
barrier coating
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TW201334052A (zh
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蕭偉民
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日月光半導體製造股份有限公司
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Description

半導體晶圓之載體接合及分離之製程
本發明係關於一種半導體元件之製程，特別的是，係關於製程中半導體晶圓之處理(Handling)及輸送(Transport)。
在製程中間狀態之半導體晶圓從一個工作站移到另一個工作站時必須非常小心的處理，以防止該晶圓受到損壞。通常，晶圓吸附器(Wafer Chuck)係安裝在晶圓或載體之表面。然而，此種方式會損壞晶圓，尤其是該吸附器從該晶圓拆卸下來時。由於減少該半導體晶圓厚度之努力一直在持續中，改良的半導體晶圓之處理及輸送技術將會變得越來越重要。
本揭露一方面係關於一種處理半導體晶圓之方法。在一實施例中，該處理半導體晶圓之方法包括：附著一載體至該半導體晶圓；將該半導體晶圓分成一內部及一外部，該載體從該內部移除所需之拉力實質上小於從該外部移除所需之拉力；及從該半導體晶圓之內部移除該載體。將該半導體晶圓分成該內部及該外部之步驟可以藉由利用一刀具或一雷射切割該半導體晶圓以形成該內部及該外部來實現。在一實施例中，該處理半導體晶圓之方法包括黏附該載體至該半導體晶圓之一主動面，其中一黏膠黏接該半導體晶圓之該主動面至一位於該載體表面之隔離塗層及不具有該隔離塗層之該載體表面之一部分。為了使該內部更容 易分離，該半導體晶圓之該主動面與該隔離塗層之間之黏著力係大致上小於該半導體晶圓與不具有該隔離塗層之該載體表面之部分之間之黏著力。
該方法特別適合於使用矽穿孔(Through Silicon Via,TSV)技術之半導體晶圓。在一實施例中，該處理半導體晶圓之方法更包括：在附著該載體至該半導體晶圓之主動面之後，移除該半導體晶圓之一非主動面之一部分以顯露位於該半導體晶圓內之至少一導電柱之一末端；以一保護層覆蓋該顯露之末端；及薄化該保護層以使得該末端突出於該保護層之外。為了更固定該晶圓，該方法更包括：附著該半導體晶圓之一非主動面至一切割膠帶之一第一表面。
本揭露另一方面係關於一種處理半導體晶圓之方法，其包括利用一第一黏膠以附著一載體至該半導體晶圓之一主動面，使得該第一黏膠係位於該半導體晶圓之主動面及一位於該載體之一表面之一隔離塗層，及一位於不具有該隔離塗層之該載體表面之一部分之第二黏膠之間；溶解該第二黏膠；及從該半導體晶圓移除該載體。
本揭露另一方面係關於一種處理半導體晶圓之方法，其包括利用一第一黏膠以附著一第一載體至該半導體晶圓之一主動面，使得該第一載體包含一位於該第一載體及該第一黏膠之間之第一隔離塗層，其中該第一隔離塗層之面積係小於該第一黏膠；形成一第二黏膠於該半導體晶圓之一非主動面；形成一第二載體於該第二黏膠上，其中該第二載體係為一高分子聚合物層；及從該半導體晶圓分離該第 一載體及該第一隔離塗層。
參考圖1，顯示本發明一實施例中準備被處理(Handling)及輸送(Transportation)之半導體晶圓20(以剖視圖呈現)。該半導體晶圓20具有一第一表面201、一第二表面202及複數個導電柱(Conductive Pillars)207。該半導體晶圓20可由矽(Silicon)、鍺(Germanium)、砷化鎵(Gallium Arsenide)等所製成，且該等導電柱207係由適當導電金屬，例如銅，所製成。在本實施例中，該半導體晶圓20包含一積體電路203位於該第一表面201及該等導電柱207(如圖所示)，因此該第一表面201被定義為一主動面(Active Surface)，且該第二表面202被定義為一非主動面(Inactive Surface)。然而，可以理解的是，該半導體晶圓20也可以是一中介基板(Interposer)，其僅具有該等導電柱207。為了避免將導電金屬直接置於半導體材料中，一絕緣材料208，例如非導電高分子材料(包含聚亞醯胺(Polymide,PI)、環氧樹脂(Epoxy)或苯環丁烯(Benzocyclobutene,BCB))或無機材料(例如二氧化矽(SiO2))，係形成於該半導體材料及該等導電柱207之間。
在本實施例中，該積體電路203，例如CMOS電路，係係形成於該第一表面201且可包含一重佈層(Redistribution Layer,RDL)，且複數個導電元件205係形成於該積體電路203上且電性連接至該等導電柱207。
一第一黏膠22係施加於該半導體晶圓20之第一表面 201。在本實施例中，該第一黏膠22係位於該積體電路203上，且包含一可溶劑溶解的黏膠(solvent-dissolving adhesive)。該可溶劑溶解的黏膠例如包含住友化學公司(SUMITOMO CHEMICAL)的X5000及X5300牌子的黏膠。
此外，提供一第一載體31，其可以是半導體材料或是絕緣材料例如玻璃。該第一載體31具有一第一隔離塗層(Isolation Coating)32，位於其一表面311。在本實施例中，該第一隔離塗層32係為一疏水性塗層。
參考圖2，該半導體晶圓20之第一表面201係附著該第一載體31，且係利用該第一黏膠22將該半導體晶圓20黏附至該第一載體31。該第一隔離塗層32之特性係為該第一隔離塗層32與該第一黏膠22間之黏著力較弱。在本實施例中，該等導電元件205係嵌在該第一黏膠22中，且該第一黏膠22之厚度係大於該等導電元件205之厚度。該第一隔離塗層32之面積係略小於該第一黏膠22之面積。在本實施例中，該第一黏膠22與該第一載體31間之黏著力係大於該第一黏膠22與該第一隔離塗層32之黏著力。
參考圖3，於該半導體晶圓20之第二表面202進行表面處理。以研磨及/或蝕刻方式薄化該半導體晶圓20之第二表面202，使得該等導電柱207突出於該半導體晶圓20之上表面，且形成複數個導電通孔(Conductive Via)204。因此，每一該等導電通孔204之末端2041(導電通孔204可包含該絕緣材料208及該導電柱207二個部分)係顯露。
參考圖4，例如以積層製程(Laminating Process)或旋轉 塗佈製程(Spin Coating Process)形成一保護層23於該第二表面202，以覆蓋該等導電通孔204之末端2041。該保護層23可以是非導電高分子材料(例如聚亞醯胺(Polymide,PI))、環氧樹脂(Epoxy)或苯環丁烯(Benzocyclobutene,BCB)。或者，也可使用無機保護層(例如二氧化矽(SiO2))。在本實施例中，該保護層23可能是感光性聚合物，例如苯環丁烯(Benzocyclobutene,BCB)，且可以利用旋轉塗佈或噴射塗佈(Spray Coating)而形成。
參考圖5，以研磨及/或蝕刻方式薄化該保護層23以使得該等導電通孔204之末端2041突出於該保護層23之外。亦即，部分該保護層23仍留在該半導體晶圓20之第二表面202上，且填滿該等末端2041間之區域或在該等末端2041間之區域交錯。
參考圖6，以電鍍方式形成一表面處理層(surface finish layer)24於該等導電通孔204之末端2041。在本實施例中，該表面處理層24具有堆疊金屬層結構，例如鎳/金(Ni/Au)層或鎳/鈀/金(Ni/Pd/Au)層。
參考圖7，移除該半導體晶圓20及該第一黏膠22之一外緣部分以形成一圓形溝槽25以顯露部分該第一隔離塗層32。該半導體晶圓20被分割成一內部209及一外部210。該圓形溝槽25形成之後，該內部209係大致上全部利用該第一黏膠22附著至該第一隔離塗層32，如此，該內部209可容易地從該第一載體31分離。在本實施例中，為了移除大部分位於該圓形溝槽25內之第一黏膠22，該圓形溝槽25之 深度H係等於該半導體晶圓20之厚度t1、該第一黏膠22之厚度t2及10 μm之尺寸公差之總和。亦即，H=t1+t2±10 μm。在本實施例中，係利用一刀具51從該半導體晶圓20之第二表面202切割該半導體晶圓20及該第一黏膠22，且該內部209之表面積係略小於該第一隔離塗層32之表面積。
參考圖8，為了顯露一部份該第一隔離塗層32，該圓形溝槽25與該半導體晶圓20之一邊緣之距離d1係略大於該第一隔離塗層32與該半導體晶圓20之一邊緣之距離d2，使得該圓形溝槽25係形成於該第一隔離塗層32上。在本實施例中，d1和d2間之差距係介於400 μm至600 μm。
參考圖9，或者，一雷射42也可用以切割該半導體晶圓20及該第一黏膠22以形成該圓形溝槽25。
參考圖10，提供一第二載體。在本實施例中，該第二載體係為一切割膠帶41，其具有一第一表面411、一第二表面412及一位於該第一表面411之可紫外光解除之膠層(Ultraviolet-released Adhesive Layer)(圖中未示)。該切割膠帶41之第一表面411係利用該可紫外光解除之膠層而附著至該半導體晶圓20之第二表面202，且該等導電通孔204之末端2041係嵌在該可紫外光解除之膠層中。
參考圖11，形成一覆蓋層44於該切割膠帶41之第二表面412上。該覆蓋層44係為不透明層，且其尺寸及位置係對應該半導體晶圓20之內部209，且被當成一光罩使用。
參考圖12，利用一紫外光43照射該第二表面412位於該 覆蓋層44外之第一部份41a。因此，有效地降低在第一部份41a上之可紫外光解除之膠層之黏著力。此外，該切割膠帶41被該覆蓋層44覆蓋之一第二部份41b因未被該紫外光43照射而仍保持其黏著力。
參考圖13，該第一載體31係固定住，且對該切割膠帶41施加一拉力F。在本實施例中，該拉力F係大於該第一黏膠22與該第一隔離塗層32間之黏著力，因此，該第一載體31、該第一隔離塗層32及該半導體晶圓20之外部210同時從該切割膠帶41及該半導體晶圓20之內部209分離。
參考圖14，利用一溶劑(例如：加馬丁內酯(Gamma-Butyrolactone,GBL)或丙二醇甲醚醋酸酯(Propylene glycol methyl ether acetatePGMEA,PGMEA))將殘留之第一黏膠22從該半導體晶圓20移除，以顯露該等導電元件205。
本實施例之優點在於，該第一載體31分離後，使用該第二載體(該切割膠帶41)以支撐及保護該半導體晶圓20。此種強化之處理製程可使得該半導體晶圓20較不會受到損壞，因此增加該半導體製程之良率。再者，該第二載體(該切割膠帶41)所提供之支撐有利於清除該第一黏膠22之製程。此外，上述使用刀具51及雷射42之切割製程可大大地加速該第一載體31之分離速率。
參考圖15至圖18，顯示本發明另一實施例之暫時載體接合及分離之製程。本實施例係與上述之製程相似；然而，切割該半導體晶圓20及該第一黏膠22之步驟係不同。
參考圖15，移除該半導體晶圓20及該第一黏膠22之一外 緣部分以顯露部分該第一隔離塗層32。然而，在本實施例中，係利用該刀具51從該半導體晶圓20之第二表面202切割且移除該半導體晶圓20及該第一黏膠22之最外緣部分206，直到顯露該第一隔離塗層32為止。較佳地，也可同時切除該第一隔離塗層32之邊緣一小部分，以確保該第一載體31之表面311上沒有第一黏膠22。
參考圖16，或者，一雷射42也可用以切除該半導體晶圓20及該第一黏膠22之最外緣部分206。
參考圖17，該切割膠帶41之第一表面411係利用一黏膠層(圖中未示)而附著至該半導體晶圓20之第二表面202，且該等導電通孔204之末端2041係嵌在該黏膠層中。
參考圖18，該第一載體31及該第一隔離塗層32同時從該半導體晶圓20分離。然後，將該第一黏膠22浸於一溶劑(例如：加馬丁內酯(Gamma-Butyrolactone,GBL)或丙二醇甲醚醋酸酯(Propylene Glycol Methyl Ether Acetate,PGMEA))中。該溶劑溶解該第一黏膠22；因此，該半導體晶圓20之第一表面201係顯露。
該切割膠帶41保留在該半導體晶圓20上以使該半導體晶圓20可以被處理及/或從一個工作站輸送至另一個工作站。
參考圖19至圖24，顯示本發明另一實施例之暫時載體接合及分離之製程。本實施例係與上述之製程相似；然而，施加一第二載體之步驟係不同。
參考圖19，以電鍍方式形成一表面處理層24於該等導電 通孔204之末端2041後，一第二黏膠38形成於該半導體晶圓20之第二表面202該第二表面202，以覆蓋該等導電通孔204之末端2041。在本實施例中，該第二黏膠38係為一可溶劑溶解的黏膠，且其可與該第一黏膠22相同。
參考圖20，該第二黏膠38係利用旋轉塗佈(Spin Coating)或噴射塗佈(Spray Coating)所形成，且該第二黏膠38之面積係與該半導體晶圓20相同。
參考圖21，以旋轉塗佈或噴射塗佈形成一高分子聚合物層39於該第二黏膠38上。該高分子聚合物層39與該第二黏膠38係為實質不同之材料。在本實施例中，該高分子聚合物層39係為例如環氧樹脂(Epoxy)、封膠材料、雙馬來醯亞胺-三氮雜苯(Bismaleimide-Triazine,BT)樹脂、苯環丁烯(Benzocyclobutene,BCB)、PBO(polybezoxazole)或聚亞醯胺(Polymide,PI)。
參考圖22，經固化後，該高分子聚合物層39變成一第二載體40。在本實施例中，該第二載體40之面積係與該第二黏膠38相同，且為使該半導體晶圓20可以被處理及/或從一個工作站輸送至另一個工作站，該第二載體40係大致上比該第二黏膠38厚。
參考圖23，將該半導體晶圓20、該第一黏膠22及該第一載體31浸於一溶劑(例如：加馬丁內酯(Gamma-Butyrolactone,GBL)或丙二醇甲醚醋酸酯(Propylene glycol methyl ether acetatePGMEA,PGMEA))，接著，部分該第一黏膠22被溶解，且部分該第一隔離塗層32被顯露。接 著，由於該第一黏膠22及該第一隔離塗層32間之弱黏著力，該第一載體31及該第一隔離塗層32可以同時容易地從該半導體晶圓20分離。該第二載體40保留在該半導體晶圓20上以使該半導體晶圓20可以被處理及/或從一個工作站輸送至另一個工作站。
參考圖24，分離該第一載體31後，將殘留之第一黏膠22從該半導體晶圓20移除，以顯露該等導電元件205。
參考圖25至圖29，顯示本發明另一實施例之暫時載體接合及分離之製程。本實施例係與上述之製程相似；然而，該第一載體31之結構及該第一載體31之分離步驟係不同。
參考圖25，提供該第一載體31，該第一載體31具有一第一隔離塗層32，位於其一表面311。在本實施例中，該第一載體31係為半導體材料或是絕緣材料例如玻璃，且該第一隔離塗層32係為一疏水性塗層。一第一環邊黏膠34係形成於於該第一載體31之邊緣部分上，且係為環狀。在本實施例中，該第一環邊黏膠34係為感光性材質，例如正光阻或負光阻，且係利用乾膜疊層製程所製成。較佳地，該第一環邊黏膠34搭接該第一隔離塗層32。
參考圖26，提供該半導體晶圓20(以剖面圖表示)。該半導體晶圓20與圖1之該半導體晶圓20相同，因此不再贅述。接著，該第一黏膠22係施加於該半導體晶圓20之第一表面201。在本實施例中，該第一黏膠22係位於該積體電路203上，且包含一可溶劑溶解的黏膠。該可溶劑溶解的黏膠例如包含住友化學公司(SUMITOMO CHEMICAL)的 X5000及X5300牌子的黏膠。要注意的是，該第一黏膠22及該第一環邊黏膠34係實質上不同。
參考圖27，該半導體晶圓20之第一表面201係附著該第一載體31，且係利用該第一黏膠22將該半導體晶圓20黏附至該第一載體31。在本實施例中，該第一黏膠22接觸該第一環邊黏膠34，且該第一黏膠22與該第一環邊黏膠34間之黏著力係大於該第一黏膠22與該第一隔離塗層32間之黏著力。接著，於該半導體晶圓20之第二表面202進行表面處理，以形成複數個導電通道204。接著，形成一保護層23於該第二表面202，以覆蓋該等導電通道204之末端2041。接著，藉由電鍍以形成一表面處理層24於導電通道204之未端2041。
參考圖28，提供一第二載體。在本實施例中，該第二載體係為一切割膠帶41，其具有一第一表面411、一第二表面412及一位於該第一表面411之黏膠層(圖中未示)。該切割膠帶41之第一表面411係利用該黏膠層(圖中未示)而附著至該半導體晶圓20之第二表面202，且該等導電通道204之末端2041係嵌在該黏膠層中。
參考圖29，將該第一載體31、該第一環邊黏膠34及該半導體晶圓20浸於一鹼性溶劑，例如：氫氧化四甲基銨溶液(Tetramethylammonium Hydroxide,TMAH(aq))或氫氧化鈉溶液(NaOH(aq))中，且該第一環邊黏膠34被該鹼性溶劑溶解。接著，該第一載體31及該第一隔離塗層32係同時從該半導體晶圓20分離。該切割膠帶41保留在該半導體晶圓20 上以使該半導體晶圓20可以被處理及/或從一個工作站輸送至另一個工作站。分離該第一載體31後，將殘留之第一黏膠22從該半導體晶圓20移除，以顯露該等導電元件205。
參考圖30至圖32，顯示本發明另一實施例之暫時載體接合及分離之製程。本實施例係與上述之製程相似；然而，施加一第二載體之步驟係不同。
參考圖30，提供一第二載體35，其係為半導體材料或是絕緣材料例如玻璃。該第二載體35具有一表面351。接著，形成一第二隔離塗層36及一第二環邊黏膠37於該第二載體35之表面351，其中該第二環邊黏膠37係環繞且接觸該第二隔離塗層36。較佳地，該第二環邊黏膠37搭接該第二隔離塗層36。在本實施例中，該第二環邊黏膠37之形成方法係與該第一環邊黏膠34之形成方法相同，如圖25所示。在本實施例中，該第二環邊黏膠37之材質係與該第一環邊黏膠34之材質相同或不同。
參考圖31，利用一第二黏膠38將該第二載體35黏附至該半導體晶圓20之第二表面202。在本實施例中，該第二黏膠38與該第二環邊黏膠37間之黏著力係大於該第二黏膠38與該第二隔離塗層36間之黏著力。
參考圖32，將該第一環邊黏膠34、該第一黏膠22及該第一載體31浸於一鹼性溶劑，例如：氫氧化四甲基銨溶液(Tetramethylammonium Hydroxide,TMAH(aq))或氫氧化鈉溶液(NaOH(aq))中，且該第一環邊黏膠34被該鹼性溶劑溶 解。因此，該第一載體31及該第一隔離塗層32係同時從該半導體晶圓20分離。該第二載體35保留在該半導體晶圓20上以使該半導體晶圓20可以被處理及/或從一個工作站輸送至另一個工作站。分離該第一載體31後，將殘留之第一黏膠22從該半導體晶圓20移除，以顯露該等導電元件205。
惟上述實施例僅為說明本發明之原理及其功效，而非用以限制本發明。因此，習於此技術之人士對上述實施例進行修改及變化仍不脫本發明之精神。本發明之權利範圍應如後述之申請專利範圍所列。
20‧‧‧半導體晶圓
22‧‧‧第一黏膠
23‧‧‧保護層
24‧‧‧表面處理層
25‧‧‧圓形溝槽
31‧‧‧第一載體
32‧‧‧第一隔離塗層
34‧‧‧第一環邊黏膠
35‧‧‧第二載體
36‧‧‧第二隔離塗層
37‧‧‧第二環邊黏膠
38‧‧‧第二黏膠
39‧‧‧高分子聚合物層
40‧‧‧第二載體
41‧‧‧切割膠帶
41a‧‧‧第一部份
41b‧‧‧第二部份
42‧‧‧雷射
43‧‧‧紫外光
44‧‧‧覆蓋層
51‧‧‧刀具
201‧‧‧第一表面
202‧‧‧第二表面
203‧‧‧積體電路
204‧‧‧導電通孔
205‧‧‧導電元件
206‧‧‧最外緣部分
207‧‧‧導電柱
208‧‧‧絕緣材料
209‧‧‧內部
210‧‧‧外部
311‧‧‧第一載體之表面
411‧‧‧第一表面
412‧‧‧第二表面
2041‧‧‧導電通孔之末端
F‧‧‧拉力
圖1至圖14顯示本發明一實施例之暫時載體接合及分離之製程；圖15至圖18顯示本發明另一實施例之暫時載體接合及分離之製程；圖19至圖24顯示本發明另一實施例之暫時載體接合及分離之製程；圖25至圖29顯示本發明另一實施例之暫時載體接合及分離之製程；及圖30至圖32顯示本發明另一實施例之暫時載體接合及分離之製程。
20‧‧‧半導體晶圓
22‧‧‧第一黏膠
23‧‧‧保護層
24‧‧‧表面處理層
25‧‧‧圓形溝槽
31‧‧‧第一載體
32‧‧‧第一隔離塗層
51‧‧‧刀具
201‧‧‧第一表面
202‧‧‧第二表面
203‧‧‧積體電路
204‧‧‧導電通孔
205‧‧‧導電元件
207‧‧‧導電柱
208‧‧‧絕緣材料
209‧‧‧內部
210‧‧‧外部
311‧‧‧第一載體之表面
2041‧‧‧導電通孔之末端

Claims (17)

  1. 一種處理半導體晶圓之方法，包括：附著一載體至該半導體晶圓，其中一黏膠黏接該半導體晶圓之一主動面至位於該載體表面之一隔離塗層及不具有該隔離塗層之該載體表面之一部分，且該半導體晶圓之該主動面與該隔離塗層之間之黏著力實質上係小於該半導體晶圓與不具有該隔離塗層之該載體表面之該部分之間之黏著力；將該半導體晶圓分成一內部及一外部，該載體從該內部移除所需之拉力實質上小於從該外部移除所需之拉力；及從該半導體晶圓之內部移除該載體。
  2. 如請求項1之方法，其中將該半導體晶圓分成該內部及該外部之步驟包含利用一刀具或一雷射切割該半導體晶圓以形成該內部及該外部。
  3. 如請求項1之方法，其中將該半導體晶圓分成該內部及該外部之步驟顯露出該隔離塗層。
  4. 如請求項1之方法，其中從該半導體晶圓之內部移除該載體之步驟包含施加一拉力至該載體。
  5. 如請求項1之方法，其中該隔離塗層係為一疏水性塗層。
  6. 如請求項1之方法，更包括：附著該半導體晶圓之一非主動面至一切割膠帶之一第一表面； 形成一覆蓋層於該切割膠帶之一第二表面上，其中該覆蓋層係對應該半導體晶圓之內部；及利用一紫外光照射該切割膠帶之第二表面，其中位於該覆蓋層之外之該切割膠帶之該第二表面之黏性變弱。
  7. 如請求項1之方法，更包括一從該半導體晶圓移除該黏膠之步驟。
  8. 如請求項1之方法，其中在附著該載體至該半導體晶圓之後更包括：移除該半導體晶圓之一非主動面之一部分以顯露位於該半導體晶圓內之至少一導電柱之一末端；以一保護層覆蓋該顯露之末端；及薄化該保護層以使得該末端突出於該保護層之外。
  9. 如請求項1之方法，其中將該半導體晶圓分成該內部及該外部之步驟包含形成一圓形溝槽以分割該內部及該外部，該圓形溝槽之深度係等於該半導體晶圓之厚度、一黏膠之厚度及一尺寸公差之總和。
  10. 如請求項9之方法，其中該圓形溝槽與該半導體晶圓之一邊緣之一距離係大於該隔離塗層與該半導體晶圓之一邊緣之一距離。
  11. 一種處理半導體晶圓之方法，包括：利用一第一黏膠以附著一載體至該半導體晶圓之一主動面，使得該第一黏膠係位於該半導體晶圓之主動面及一位於該載體之一表面之一隔離塗層，及一位於不具有該隔離塗層之該載體表面之一部分之第二黏膠之間； 溶解該第二黏膠；及從該半導體晶圓移除該載體。
  12. 如請求項11之方法，其中該第一黏膠與該第二黏膠係實質不同。
  13. 如請求項11之方法，其中該隔離塗層係為一疏水性塗層。
  14. 如請求項11之方法，更包括一利用一第三黏膠以附著一第二載體至該半導體晶圓之一非主動面之步驟。
  15. 如請求項14之方法，其中該第三黏膠係位於該半導體晶圓之非主動面及一位於該第二載體之一表面之第二隔離塗層，及一位於不具有該第二隔離塗層之該第二載體表面之一部分之第四黏膠。
  16. 一種處理半導體晶圓之方法，包括：利用一第一黏膠以附著一第一載體至該半導體晶圓之一主動面，使得該第一載體包含一位於該第一載體及該第一黏膠之間之第一隔離塗層，其中該第一隔離塗層之面積係小於該第一黏膠；形成一第二黏膠於該半導體晶圓之一非主動面；形成一第二載體於該第二黏膠上，其中該第二載體係為一高分子聚合物層；及從該半導體晶圓分離該第一載體及該第一隔離塗層。
  17. 如請求項16之方法，其中附著該載體至該半導體晶圓之後更包括：移除該半導體晶圓之一非主動面之一部分以顯露位於 該半導體晶圓內之至少一導電柱之一末端；以一保護層覆蓋該顯露之末端；及薄化該保護層以使得該末端突出於該保護層之外。
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US20130203265A1 (en) 2013-08-08
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US8975157B2 (en) 2015-03-10
TW201334052A (zh) 2013-08-16

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