TWI502715B - 半導體封裝 - Google Patents

半導體封裝 Download PDF

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TWI502715B
TWI502715B TW103125791A TW103125791A TWI502715B TW I502715 B TWI502715 B TW I502715B TW 103125791 A TW103125791 A TW 103125791A TW 103125791 A TW103125791 A TW 103125791A TW I502715 B TWI502715 B TW I502715B
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ceramic substrate
metal ring
laminated ceramic
heat sink
metal
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TW103125791A
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TW201442185A (zh
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Akihiro Matsusue
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Mitsubishi Electric Corp
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Description

半導體封裝
本發明係關於一種光通訊用的半導體封裝。
在習知之光通訊用的半導體封裝中有金屬封裝及CAN封裝。金屬封裝係為組合層疊陶瓷基板及金屬製箱者。CAN封裝係為在金屬板的開口孔部穿過金屬製棒並且利用玻璃進行密閉及絕緣，熔接附窗的蓋者。
金屬封裝係由於使用層疊陶瓷基板，因此高頻特性優。但是構造複雜且零件數目多而使成本為高。又，其係為箱型形狀，只能從成為蓋之前的開口部側(上側)進行零件安裝。
CAN封裝係可以從所有方向將零件安裝在金屬板的上面，又可以利用電氣熔接瞬間接合金屬板及蓋，因此生產性優。但是，由於供給訊號的導線係相對於金屬板為利用玻璃密封予以固定，因此難以取得阻抗匹配而對於高頻特性為差。
對於此點，提出在層疊陶瓷基板上面的凹部安裝光半導體元件，並且利用附窗的金屬製蓋覆蓋該元件之半導體封裝(例如參照專利文獻1)。
先前技術文獻
專利文獻
專利文獻1：日本特開2003-163382號公報
由於層疊陶瓷基板為氧化鋁陶瓷，因此與基底部為金屬製的CAN封裝相比散熱性為差。
本發明係為用以解決上述的課題而開發出來者，其目的係為得到可以提升高頻特性、生產性、及散熱性之半導體封裝。
關於本發明之半導體封裝，其特徵在於包括：層疊陶瓷基板；設置在前述層疊陶瓷基板上之金屬製環；在前述層疊陶瓷基板上面之中設置在前述金屬製環內之光半導體元件；與前述金屬製環接合，並且覆蓋前述光半導體元件之附窗的金屬製蓋；及與前述金屬製蓋的外側面接合之外部散熱器。
根據本發明，可以提升高頻特性、生產性、及散熱性。
1‧‧‧層疊陶瓷基板
2‧‧‧金屬製環
3‧‧‧電極
5‧‧‧內部散熱器
6‧‧‧半導體雷射(光半導體元件)
7‧‧‧配線
9‧‧‧玻璃窗(窗)
10‧‧‧金屬製蓋
11‧‧‧外部散熱器
13、14‧‧‧接合平面
15‧‧‧框體
第1圖係為顯示關於本發明之實施形態1之半導體封裝的蓋內部之側面圖。
第2圖係為顯示將關於本發明之實施形態1之半導體封裝的外部散熱器與外部的框體接合的狀態之剖面圖。
第3圖係為顯示將關於本發明之實施形態1之半導體封裝的外部散熱器與外部的框體接合的狀態之剖面圖。
第4圖係為顯示關於本發明之實施形態1之半導體封裝的變形例1之蓋內部的側面圖。
第5圖係為顯示關於本發明之實施形態1之半導體封裝的變形例2之外部散熱器與外部的框體接合的狀態之剖面圖。
第6圖係為顯示關於本發明之實施形態2之半導體封裝的蓋內部之側面圖。
第7圖係為顯示關於本發明之實施形態3之半導體封裝的蓋內部之側面圖。
針對關於本發明之實施形態的半導體封裝，參照圖面進行說明。在相同或者對應的構成要素係付予相同符號，而有省略重覆說明之情況。
實施形態1.
第1圖係為顯示關於本發明之實施形態1之半導體封裝的蓋內部之側面圖。在由氧化鋁構成的層疊陶瓷基板1上設置Fe或Ni等金屬製環2。在層疊陶瓷基板1上面之中將電極3設置在金屬製環2內。電極3係與貫穿層疊陶瓷基板1的導孔4連接。在層疊陶瓷基板1上面之中將內部散熱器5設置在金屬製環2內。
在內部散熱器5上設置面發光型的半導體雷射6。又，使用面受光型的受光元件取代面發光型的半導體雷射6亦可。在內部散熱器5的表面設置配線7。半導體雷射6與配線7係利用引線予以連接。
內部散熱器5係以電極3的一部份與配線7的一 部份重疊的方式配置在層疊陶瓷基板1上。再者，電極3的一部份與配線7的一部份係利用焊料或導電性樹脂等導電性接合構件8予以接合。如此一來由於沒有進行引線鍵合，因此可以減低在電極3與配線7之接合部份的高頻傳送損耗而改善高頻特性。再者，由於可以省略引線鍵合工程而提升生產性。
將附玻璃窗9的金屬蓋10與金屬製環2進行電氣 熔接。金屬製蓋10係由薄的Fe或Fe-Ni合金構成。金屬製蓋10係覆蓋內部散熱器5及半導體雷射6。在金屬製蓋10的外側面接合外部散熱器11。使用接著劑12或是焊料填充兩者的間隙。又在金屬製蓋10與外部散熱器11熔接後，利用散熱油脂等填充兩者的間隙亦可。
外部散熱器11係延伸到層疊陶瓷基板1的下面。外部散熱器11係具有與外部的框體接合之接合平面13、14。接合平面13係存在於外部散熱器11的側面。接合平面14係存在於層疊陶瓷基板1的下面側。
第2及3圖係為顯示將關於本發明之實施形態1之半導體封裝的外部散熱器與外部的框體接合的狀態之剖面圖。在第2圖中，使外部散熱器11側面之接合平面13與客戶的框體15接合。在第3圖中，使外部散熱器11下面之接合平面14與客戶的框體15接合。外部散熱器11與框體15的間隙係利用散熱油脂16或柔軟的散熱片予以埋填。利用半導體雷射6產生的熱能係透過內部散熱器5、層疊陶瓷基板1、金屬製環2、金屬製蓋10、及外部散熱器11散熱到外部的框體15。
在本實施形態中，藉由使用層疊陶瓷基板1可以 提升高頻特性。再者，層疊陶瓷基板1上的金屬製環2與金屬製蓋10係可以進行瞬間電氣熔接。在熔接金屬製蓋10之前的層疊陶瓷基板1係由於沒有側壁等障礙物，因此易於安裝半導體雷射6等。因此可以提升生產性。
又雖然金屬製蓋10本身也具有作為一種散熱器的 機能，但是由於材質厚度為薄而使散熱效果為低。對於此點，在本實施形態中，由於在金屬製蓋10的外側面接合外部散熱器11，因此可以提升散熱性。
第4圖係為顯示關於本發明之實施形態1之半導 體封裝的變形例1之蓋內部的側面圖。在變形例1中，將面發光型的半導體雷射6(或者面受光型的受光元件)直接安裝在層疊陶瓷基板1上。如此一來，即使在省略內部散熱器5的情況下也可以得到與上述相同的效果。
第5圖係為顯示關於本發明之實施形態1之半導 體封裝的變形例2之外部散熱器與外部的框體接合的狀態之剖面圖。在外部散熱器11側面之接合平面13與客戶的框體15接合的情況下，不必使外部散熱器11的下面與層疊陶瓷基板1的下面一致。因此，在變形例2中，藉由不必使兩者一致，並且將外部散熱器11變大而提升散熱性。
實施形態2.
第6圖係為顯示關於本發明之實施形態2之半導體封裝的蓋內部之側面圖。在本實施形態中，使金屬製環2的厚度比電極3更厚。藉此，可以提升從製品側面的散熱性。
又，使金屬製環2的內端部與內部散熱器5接觸。 藉此，不用透過熱傳導率低的層疊陶瓷基板1可以將熱能從內部散熱器5傳達到熱傳導率高的金屬製環2。該結果為可以進一步提升散熱性。
又，金屬製環2的外端部係與層疊陶瓷基板1的 外端部切齊。如此一來，藉由將金屬製環2的面積擴大到與層疊陶瓷基板1相同的大小，可以進一步提升散熱性。
實施形態3.
第7圖係為顯示關於本發明之實施形態3之半導體封裝的蓋內部之側面圖。本實施形態係為對於實施形態2追加與實施形態1相同的外部散熱器11者。外部散熱器11係與金屬製蓋10的外側面及金屬製環2的外端部接合。藉此，可以進一步提升散熱性。
又在實施形態1~3中，作為層疊陶瓷基板1的材 料，比起氧化鋁使用熱傳導率高之AlN為佳。由於AlN與氧化鋁相比具有8倍以上的熱傳導率，因此可以得到散熱性優之半導體封裝。
又在光半導體元件為半導體雷射6的情況下，將 玻璃窗9改換成鏡面亦可。從半導體雷射6所射出之光雖然是隨著距離予以擴散，但是由於可以利用鏡面進行集光，因此可以提高光的結合效率。
1‧‧‧層疊陶瓷基板
2‧‧‧金屬製環
3‧‧‧電極
4‧‧‧導孔
5‧‧‧內部散熱器
6‧‧‧半導體雷射(光半導體元件)
7‧‧‧配線
8‧‧‧導電性接合構件
9‧‧‧玻璃窗(窗)
10‧‧‧金屬製蓋
11‧‧‧外部散熱器
12‧‧‧接著劑
13、14‧‧‧接合平面

Claims (4)

  1. 一種半導體封裝，包括：層疊陶瓷基板；金屬製環，設置在前述層疊陶瓷基板上；電極，在前述層疊陶瓷基板上面之中設置在前述金屬製環內；光半導體元件，在前述層疊陶瓷基板上面之中設置在前述金屬製環內，並且與前述電極連接；附有窗的金屬製蓋，與前述金屬製環接合，並且覆蓋前述光半導體元件；及內部散熱器，在前述層疊陶瓷基板上面之中設置在前述金屬製環內；其特徵在於：前述金屬製環的厚度係比前述電極更厚；前述光半導體元件係設置在前述內部散熱器上；前述金屬製環的內端部係與前述內部散熱器接觸。
  2. 一種半導體封裝，包括：層疊陶瓷基板；金屬製環，設置在前述層疊陶瓷基板上；內部散熱器，在前述層疊陶瓷基板上面之中設置在前述金屬製環內；光半導體元件，設置在前述內部散熱器上；及附有窗的金屬製蓋，與前述金屬製環接合，並且覆蓋前述光半導體元件， 其特徵在於：前述金屬製環的內端部係與前述內部散熱器接觸。
  3. 如申請專利範圍第1或2項之半導體封裝，其中，前述金屬製環的外端部係與前述層疊陶瓷基板的外端部切齊。
  4. 如申請專利範圍第1或2項之半導體封裝，其中，進一步包括：與前述金屬製環的外端部接合之外部散熱器。
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