WO2013164876A1 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- WO2013164876A1 WO2013164876A1 PCT/JP2012/061536 JP2012061536W WO2013164876A1 WO 2013164876 A1 WO2013164876 A1 WO 2013164876A1 JP 2012061536 W JP2012061536 W JP 2012061536W WO 2013164876 A1 WO2013164876 A1 WO 2013164876A1
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- WIPO (PCT)
- Prior art keywords
- ceramic substrate
- metal ring
- multilayer ceramic
- heat sink
- metal
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 abstract description 12
- 239000011521 glass Substances 0.000 abstract description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48235—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Definitions
- the present invention relates to a semiconductor package for optical communication.
- Conventional semiconductor packages for optical communication include a metal package and a CAN package.
- the metal package is a combination of a multilayer ceramic substrate and a metal box.
- a metal rod is passed through an opening hole portion of a metal plate, airtight and insulated with glass, and a cap with a window is welded.
- Metal package has excellent high frequency characteristics because it uses a multilayer ceramic substrate.
- the structure is complicated, the number of parts is large, and the cost is high.
- it is a box shape, and components can be mounted only from the opening side (upper side) before the lid is closed.
- the CAN package can be mounted on the top surface of the metal plate from any direction, and the metal plate and cap can be instantly joined by electric welding, resulting in excellent productivity.
- the lead for supplying the signal is fixed to the metal plate by glass sealing, impedance matching is difficult to obtain and the high frequency characteristics are inferior.
- the base part was inferior in heat dissipation compared to a metal CAN package.
- the present invention has been made to solve the above-described problems, and an object thereof is to obtain a semiconductor package capable of improving high-frequency characteristics, productivity, and heat dissipation.
- a semiconductor package according to the present invention includes a multilayer ceramic substrate, a metal ring provided on the multilayer ceramic substrate, an optical semiconductor element provided in the metal ring on the multilayer ceramic substrate, and the metal A metal cap with a window that is bonded to a ring and covers the optical semiconductor element, and an external heat sink that is bonded to an outer surface of the metal cap.
- FIG. 1 is a side view showing the inside of a cap of a semiconductor package according to Embodiment 1 of the present invention.
- a metal ring 2 such as Fe or Ni is provided on a laminated ceramic substrate 1 made of alumina or the like.
- An electrode 3 is provided in a metal ring 2 on the multilayer ceramic substrate 1. The electrode 3 is connected to a via 4 that penetrates the multilayer ceramic substrate 1.
- An internal heat sink 5 is provided in the metal ring 2 on the multilayer ceramic substrate 1.
- a surface emitting semiconductor laser 6 is provided on the internal heat sink 5. Instead of the surface emitting semiconductor laser 6, a surface light receiving element may be used. Wiring 7 is provided on the surface of the internal heat sink 5. The semiconductor laser 6 and the wiring 7 are connected by a wire.
- the internal heat sink 5 is disposed on the multilayer ceramic substrate 1 so that a part of the electrode 3 and a part of the wiring 7 overlap. A part of the electrode 3 and a part of the wiring 7 are joined by a conductive joining member 8 such as solder or conductive resin. Since wire bonding is not performed in this way, high-frequency characteristics can be improved by reducing high-frequency transmission loss at the joint between the electrode 3 and the wiring 7. And since a wire bond process can be skipped, productivity improves.
- a metal cap 10 with a glass window 9 is electrically welded to the metal ring 2.
- the metal cap 10 is made of thin Fe or Fe—Ni alloy.
- the metal ring 2 covers the internal heat sink 5 and the semiconductor laser 6.
- An external heat sink 11 is joined to the outer surface of the metal cap 10.
- the gap between the two is filled with adhesive 12 or solder.
- the gap between the two may be filled with heat radiation grease or the like.
- the external heat sink 11 extends to the lower surface of the multilayer ceramic substrate 1.
- the external heat sink 11 has bonding planes 13 and 14 bonded to an external housing.
- the joining plane 13 exists on the side surface of the external heat sink 11.
- the joining plane 14 exists on the lower surface side of the multilayer ceramic substrate 1.
- FIGS. 2 and 3 are cross-sectional views showing a state in which the external heat sink of the semiconductor package according to Embodiment 1 of the present invention is joined to an external housing.
- the joining flat surface 13 that is the side surface of the external heat sink 11 is joined to the housing 15 of the customer.
- FIG. 3 the joining flat surface 14 which is the lower surface of the external heat sink 11 is joined to the housing 15 of the customer.
- the gap between the external heat sink 11 and the housing 15 is filled with heat radiation grease 16 or a soft heat radiation sheet. Heat generated by the semiconductor laser 6 is radiated to the external casing 15 through the internal heat sink 5, the multilayer ceramic substrate 1, the metal ring 2, the metal cap 10, and the external heat sink 11.
- the high frequency characteristics can be improved by using the multilayer ceramic substrate 1. Then, the metal ring 2 and the metal cap 10 on the multilayer ceramic substrate 1 can be instantly welded. Since the multilayer ceramic substrate 1 before the metal cap 10 is welded has no obstacle such as a side wall, it is easy to mount the semiconductor laser 6 or the like. Therefore, productivity can be improved.
- the metal cap 10 itself functions as a kind of heat sink, but the heat dissipation effect is low because the material is thin.
- the external heat sink 11 is joined to the outer surface of the metal cap 10, heat dissipation can be improved.
- FIG. 4 is a side view showing the inside of the cap of Modification 1 of the semiconductor package according to Embodiment 1 of the present invention.
- a surface emitting semiconductor laser 6 or a surface light receiving light receiving element
- the same effect as described above can be obtained.
- FIG. 5 is a cross-sectional view showing a state in which the external heat sink of Modification 2 of the semiconductor package according to Embodiment 1 of the present invention is joined to an external housing.
- the joining flat surface 13 that is the side surface of the external heat sink 11 is joined to the housing 15 of the customer, the lower surface of the external heat sink 11 and the lower surface of the multilayer ceramic substrate 1 do not have to coincide. Therefore, in the second modification, heat dissipation is improved by making the external heat sink 11 larger without matching the two.
- FIG. FIG. 6 is a side view showing the inside of the cap of the semiconductor package according to Embodiment 2 of the present invention.
- the metal ring 2 is thicker than the electrode 3. Thereby, the heat dissipation from a product side surface can be improved.
- the inner end of the metal ring 2 is in contact with the internal heat sink 5.
- heat can be transmitted from the internal heat sink 5 to the metal ring 2 having high thermal conductivity without going through the multilayer ceramic substrate 1 having low thermal conductivity.
- the heat dissipation can be further improved.
- the outer end of the metal ring 2 is aligned with the outer end of the multilayer ceramic substrate 1.
- heat dissipation can be further improved by expanding the area of the metal ring 2 to the same size as the multilayer ceramic substrate 1.
- FIG. FIG. 7 is a side view showing the inside of the cap of the semiconductor package according to Embodiment 3 of the present invention.
- an external heat sink 11 similar to that of the first embodiment is added to the configuration of the second embodiment.
- the external heat sink 11 is joined to the outer surface of the metal cap 10 and the outer end of the metal ring 2. Thereby, heat dissipation can be further improved.
- AlN having a higher thermal conductivity than alumina As the material of the multilayer ceramic substrate 1. Since AlN has a thermal conductivity eight times or more that of alumina, a semiconductor package having excellent heat dissipation can be obtained.
- the glass window 9 may be changed to a lens.
- the light emitted from the semiconductor laser 6 diffuses with distance but can be condensed by the lens, so that the light coupling efficiency can be increased.
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- Condensed Matter Physics & Semiconductors (AREA)
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- Electromagnetism (AREA)
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Semiconductor Lasers (AREA)
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体パッケージのキャップ内部を示す側面図である。アルミナなどからなる積層セラミック基板1上に、FeやNiなどの金属製リング2が設けられている。積層セラミック基板1上において金属製リング2内に電極3が設けられている。電極3は積層セラミック基板1を貫通するビア4に接続されている。積層セラミック基板1上において金属製リング2内に内部ヒートシンク5が設けられている。
図6は、本発明の実施の形態2に係る半導体パッケージのキャップ内部を示す側面図である。本実施の形態では、金属製リング2の厚みが電極3よりも厚い。これにより、製品側面からの放熱性を向上させることができる。
図7は、本発明の実施の形態3に係る半導体パッケージのキャップ内部を示す側面図である。本実施の形態は、実施の形態2の構成に、実施の形態1と同様の外部ヒートシンク11を追加したものである。外部ヒートシンク11は、金属製キャップ10の外側面及び金属製リング2の外端部に接合されている。これにより、放熱性を更に向上させることができる。
2 金属製リング
3 電極
5 内部ヒートシンク
6 半導体レーザ(光半導体素子)
7 配線
9 ガラス窓(窓)
10 金属製キャップ
11 外部ヒートシンク
13,14 接合平面
15 筐体
Claims (8)
- 積層セラミック基板と、
前記積層セラミック基板上に設けられた金属製リングと、
前記積層セラミック基板上において前記金属製リング内に設けられた光半導体素子と、
前記金属製リングに接合され、前記光半導体素子を覆う窓付きの金属製キャップと、
前記金属製キャップの外側面に接合された外部ヒートシンクとを備えることを特徴とする半導体パッケージ。 - 前記外部ヒートシンクは、外部の筐体に接合される接合平面を有することを特徴とする請求項1に記載の半導体パッケージ。
- 前記外部ヒートシンクは、前記積層セラミック基板の下面まで延びており、
前記接合平面は、前記積層セラミック基板の下面側に存在することを特徴とする請求項2に記載の半導体パッケージ。 - 積層セラミック基板と、
前記積層セラミック基板上に設けられた金属製リングと、
前記積層セラミック基板上において前記金属製リング内に設けられた電極と、
前記積層セラミック基板上において前記金属製リング内に設けられ、前記電極に接続された光半導体素子と、
前記金属製リングに接合され、前記光半導体素子を覆う窓付きの金属製キャップとを備え、
前記金属製リングの厚みは前記電極よりも厚いことを特徴とする半導体パッケージ。 - 前記積層セラミック基板上において前記金属製リング内に設けられた内部ヒートシンクを更に備え、
前記光半導体素子は前記内部ヒートシンク上に設けられ、
前記金属製リングの内端部は前記内部ヒートシンクに接触していることを特徴とする請求項4に記載の半導体パッケージ。 - 積層セラミック基板と、
前記積層セラミック基板上に設けられた金属製リングと、
前記積層セラミック基板上において前記金属製リング内に設けられた内部ヒートシンクと、
前記内部ヒートシンク上に設けられた光半導体素子と、
前記金属製リングに接合され、前記光半導体素子を覆う窓付きの金属製キャップとを備え、
前記金属製リングの内端部は前記内部ヒートシンクに接触していることを特徴とする半導体パッケージ。 - 前記金属製リングの外端部は前記積層セラミック基板の外端部に合わされていることを特徴とする請求項4~6の何れか1項に記載の半導体パッケージ。
- 前記金属製リングの外端部に接合された外部ヒートシンクを更に備えることを特徴とする請求項4~7の何れか1項に記載の半導体パッケージ。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014513315A JP5831629B2 (ja) | 2012-05-01 | 2012-05-01 | 半導体パッケージ |
US14/371,021 US9275928B2 (en) | 2012-05-01 | 2012-05-01 | Semiconductor package |
CN201280072899.7A CN104303380A (zh) | 2012-05-01 | 2012-05-01 | 半导体封装件 |
PCT/JP2012/061536 WO2013164876A1 (ja) | 2012-05-01 | 2012-05-01 | 半導体パッケージ |
EP12876054.3A EP2846423B1 (en) | 2012-05-01 | 2012-05-01 | Semiconductor package |
KR1020147029410A KR101621712B1 (ko) | 2012-05-01 | 2012-05-01 | 반도체 패키지 |
TW101121057A TWI492355B (zh) | 2012-05-01 | 2012-06-13 | 半導體封裝 |
TW103125791A TWI502715B (zh) | 2012-05-01 | 2012-06-13 | 半導體封裝 |
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PCT/JP2012/061536 WO2013164876A1 (ja) | 2012-05-01 | 2012-05-01 | 半導体パッケージ |
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US (1) | US9275928B2 (ja) |
EP (1) | EP2846423B1 (ja) |
JP (1) | JP5831629B2 (ja) |
KR (1) | KR101621712B1 (ja) |
CN (1) | CN104303380A (ja) |
TW (2) | TWI502715B (ja) |
WO (1) | WO2013164876A1 (ja) |
Cited By (4)
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WO2015145608A1 (ja) * | 2014-03-26 | 2015-10-01 | 株式会社島津製作所 | レーザ装置 |
JP2018041839A (ja) * | 2016-09-07 | 2018-03-15 | セイコーエプソン株式会社 | 発光素子モジュール、原子発振器、電子機器および移動体 |
WO2023248983A1 (ja) * | 2022-06-20 | 2023-12-28 | ローム株式会社 | 半導体発光ユニット |
KR200498127Y1 (ko) * | 2021-03-23 | 2024-07-04 | 에즈콘 코포레이션 | 티오캔형 패키징 레이저 다이오드 및 그 방열 베이스 |
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CN110612645B (zh) * | 2017-05-17 | 2021-04-02 | 三菱电机株式会社 | 半导体封装件 |
CN108172633A (zh) * | 2018-02-22 | 2018-06-15 | 河北中瓷电子科技有限公司 | 一种半导体器件的封装结构 |
CN108390255A (zh) * | 2018-02-22 | 2018-08-10 | 青岛海信宽带多媒体技术有限公司 | 光学次模块及光模块 |
CN109586165B (zh) * | 2019-01-25 | 2020-04-07 | 维沃移动通信有限公司 | 一种激光模组及电子设备 |
CN112072458A (zh) * | 2019-06-11 | 2020-12-11 | 南昌欧菲生物识别技术有限公司 | 底座、光发射模组、3d识别装置及智能终端 |
FR3123733B1 (fr) * | 2021-06-08 | 2024-06-21 | St Microelectronics Grenoble 2 | Boîtier optique de circuit integre |
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- 2012-05-01 WO PCT/JP2012/061536 patent/WO2013164876A1/ja active Application Filing
- 2012-05-01 JP JP2014513315A patent/JP5831629B2/ja not_active Expired - Fee Related
- 2012-05-01 CN CN201280072899.7A patent/CN104303380A/zh active Pending
- 2012-05-01 KR KR1020147029410A patent/KR101621712B1/ko not_active IP Right Cessation
- 2012-06-13 TW TW103125791A patent/TWI502715B/zh not_active IP Right Cessation
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WO2015145608A1 (ja) * | 2014-03-26 | 2015-10-01 | 株式会社島津製作所 | レーザ装置 |
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WO2023248983A1 (ja) * | 2022-06-20 | 2023-12-28 | ローム株式会社 | 半導体発光ユニット |
Also Published As
Publication number | Publication date |
---|---|
TWI492355B (zh) | 2015-07-11 |
TW201347126A (zh) | 2013-11-16 |
EP2846423A1 (en) | 2015-03-11 |
KR101621712B1 (ko) | 2016-05-17 |
US9275928B2 (en) | 2016-03-01 |
JPWO2013164876A1 (ja) | 2015-12-24 |
TW201442185A (zh) | 2014-11-01 |
TWI502715B (zh) | 2015-10-01 |
US20140328361A1 (en) | 2014-11-06 |
CN104303380A (zh) | 2015-01-21 |
JP5831629B2 (ja) | 2015-12-09 |
EP2846423A4 (en) | 2015-07-01 |
EP2846423B1 (en) | 2017-06-21 |
KR20140139018A (ko) | 2014-12-04 |
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