TWI497055B - 透過率測定裝置、光罩之透過率檢查裝置、透過率檢查方法、光罩製造方法、圖案轉印方法、光罩製品 - Google Patents
透過率測定裝置、光罩之透過率檢查裝置、透過率檢查方法、光罩製造方法、圖案轉印方法、光罩製品 Download PDFInfo
- Publication number
- TWI497055B TWI497055B TW100125007A TW100125007A TWI497055B TW I497055 B TWI497055 B TW I497055B TW 100125007 A TW100125007 A TW 100125007A TW 100125007 A TW100125007 A TW 100125007A TW I497055 B TWI497055 B TW I497055B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- transmittance
- photomask
- light source
- subject
- Prior art date
Links
- 238000002834 transmittance Methods 0.000 title claims description 153
- 238000007689 inspection Methods 0.000 title claims description 52
- 238000012546 transfer Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims description 72
- 230000003287 optical effect Effects 0.000 claims description 62
- 238000012360 testing method Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012788 optical film Substances 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 35
- 239000011651 chromium Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 0 C[C@]1[C@@](C)(C*)*CC1 Chemical compound C[C@]1[C@@](C)(C*)*CC1 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910021563 chromium fluoride Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0242—Control or determination of height or angle information of sensors or receivers; Goniophotometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010172729 | 2010-07-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201215877A TW201215877A (en) | 2012-04-16 |
| TWI497055B true TWI497055B (zh) | 2015-08-21 |
Family
ID=45793896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100125007A TWI497055B (zh) | 2010-07-30 | 2011-07-14 | 透過率測定裝置、光罩之透過率檢查裝置、透過率檢查方法、光罩製造方法、圖案轉印方法、光罩製品 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012047732A (ko) |
| KR (1) | KR101286374B1 (ko) |
| CN (1) | CN102374977B (ko) |
| TW (1) | TWI497055B (ko) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120077330A (ko) * | 2010-12-30 | 2012-07-10 | 삼성코닝정밀소재 주식회사 | 패턴드 유리기판 투과율 측정장치 |
| KR101441359B1 (ko) * | 2012-01-16 | 2014-09-23 | 코닝정밀소재 주식회사 | 광전지용 커버유리의 투과율 측정장치 |
| KR20130114552A (ko) | 2012-04-09 | 2013-10-17 | 삼성테크윈 주식회사 | 그래핀 기판 검사 장치 및 그 방법 |
| KR20140063302A (ko) | 2012-11-16 | 2014-05-27 | 삼성디스플레이 주식회사 | 캐리어 기판 제거 장치, 표시장치 제조 시스템, 및 표시장치 제조 방법 |
| CN103852452A (zh) * | 2012-11-28 | 2014-06-11 | 海洋王（东莞）照明科技有限公司 | 透光率试验方法以及测试系统 |
| CN104181106A (zh) * | 2013-05-27 | 2014-12-03 | 深圳市海洋王照明工程有限公司 | 一种透明件的透光率测试工装 |
| CN105358959A (zh) * | 2013-07-22 | 2016-02-24 | 应用材料公司 | 用于处理大面积基板的设备和方法 |
| JP6474655B2 (ja) * | 2014-09-30 | 2019-02-27 | エイブリック株式会社 | レチクル透過率測定方法、投影露光装置および投影露光方法 |
| US9733567B2 (en) * | 2014-09-30 | 2017-08-15 | Sii Semiconductor Corporation | Reticle transmittance measurement method, and projection exposure method using the same |
| CN105158214B (zh) * | 2015-09-12 | 2017-11-24 | 宁波申山新材料科技有限公司 | 一种功能贴膜通透性测试仪及其测试方法 |
| WO2017094778A1 (ja) * | 2015-12-02 | 2017-06-08 | 株式会社リコー | レーザ装置、点火装置及び内燃機関 |
| CN105891163B (zh) * | 2016-03-31 | 2018-10-09 | 华南理工大学 | 0.3到2微米范围内长余辉发光强度的测试装置及方法 |
| CN105628346B (zh) * | 2016-04-05 | 2019-05-21 | 中国工程物理研究院激光聚变研究中心 | 透镜的透射率测试系统及方法 |
| CN106970049B (zh) * | 2017-05-15 | 2024-01-02 | 中国工程物理研究院激光聚变研究中心 | 透射率分布测量系统及方法 |
| CN107388994A (zh) * | 2017-06-14 | 2017-11-24 | 武汉华星光电技术有限公司 | 一种测量多晶硅粗糙度的方法及装置 |
| CN109504320A (zh) * | 2017-09-14 | 2019-03-22 | 东莞市荣腾纳米科技有限公司 | 用于隔热膜的压敏胶制备方法 |
| CN109501396B (zh) * | 2017-09-14 | 2021-06-22 | 东莞市荣腾纳米科技有限公司 | 一种导光隔热膜及其制备方法 |
| CN109000884B (zh) * | 2018-05-04 | 2020-12-01 | 芜湖良匠机械制造有限公司 | 一种用于监测玻璃基板透光性的检测装置 |
| KR20240050452A (ko) * | 2018-06-05 | 2024-04-18 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 레이저 가공 장치, 그 작동 방법 및 이를 사용한 작업물 가공 방법 |
| CN111896226A (zh) * | 2019-05-06 | 2020-11-06 | 深圳市杰普特光电股份有限公司 | 透过率检测系统及其控制方法 |
| TWI808707B (zh) * | 2021-04-07 | 2023-07-11 | 旺矽科技股份有限公司 | 光學檢測系統與光學檢測方法 |
| CN113267473B (zh) * | 2021-05-18 | 2022-09-23 | 陕西理工大学 | 一种透光检测成像装置及方法 |
| CN116533419B (zh) * | 2023-06-06 | 2023-10-20 | 广东汇发塑业科技有限公司 | 一种多层共挤制膜机的冷风机控制方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61279128A (ja) * | 1985-06-05 | 1986-12-09 | Toshiba Corp | マスク欠陥検査方法 |
| US5235400A (en) * | 1988-10-12 | 1993-08-10 | Hitachi, Ltd. | Method of and apparatus for detecting defect on photomask |
| JPH1195410A (ja) * | 1997-09-19 | 1999-04-09 | Oki Electric Ind Co Ltd | フォトマスクの欠陥検査方法および欠陥検査装置 |
| JP2005091261A (ja) * | 2003-09-19 | 2005-04-07 | Pentax Corp | 透過率測定方法及び透過率測定装置 |
| CN101545825A (zh) * | 2009-02-25 | 2009-09-30 | 宋光均 | 一种光学元件快速测量装置及测量方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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- 2011-07-29 KR KR1020110075667A patent/KR101286374B1/ko active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20120057495A (ko) | 2012-06-05 |
| CN102374977B (zh) | 2016-01-20 |
| TW201215877A (en) | 2012-04-16 |
| JP2012047732A (ja) | 2012-03-08 |
| KR101286374B1 (ko) | 2013-07-15 |
| CN102374977A (zh) | 2012-03-14 |
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