200944957 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種在光微影步驟中所使用的 罩及利用該光罩之圖案轉印方法。 【先前技術】 自以往，在液晶裝置等電子裝置之製造中， 係實行利用光微影步驟以形成阻劑圖案。即，使 定之圖案的光罩，在預定之曝光條件下，對在被 〇 加工層上形成的阻劑膜進行曝光而轉印圖案，並 阻劑膜顯影而形成阻劑圖案。其後接著，將此阻 爲光罩而蝕刻被加工層。 此種光罩的一種，已知爲多階調光罩，其具 光線加以遮光的遮光區域、使曝光光線透過的透 及使曝光光線之一部分透過的半透光區域。此多 可使曝光光線之光量依區域而作成相異。因此， 階調光罩進行曝光•顯影，藉以可形成具有至少 Ο 之殘膜値（包含殘膜値0)的阻劑圖案。實現具有如 相異殘膜値的阻劑圖案的多階調光罩，藉由減少 罩片數，在製造液晶裝置等的電子裝置時，可達 步驟之效率化而相當有用。 多階調光罩之半透光區域，例如，可利用形 要之透過率的半透過膜而透過曝光光線的一部 (例如，參照日本特開2005-2577 1 2號公報（專利3 現在，使用半透過膜的多階調光罩之半透光 過率之設定（膜質、膜厚之選擇），係根據使用該 多階調光 其一步驟 用具有預 鈾刻的被 藉由將該 劑圖案作 有將曝光 光區域、 階調光罩 使用此多 3個厚度 此多數個 使用的光 成光微影 成具有所 分而設置 :獻 1))。 區域的透 光罩而加 200944957 工薄膜的製程來決定。即，光罩使用者，首先預測利用曝 光將光罩之轉印圖案轉印到被轉印體上時所獲得的阻劑圖 案。其後，在期望獲得的阻劑圖案中，根據預定部分之阻 劑殘膜質及其容許變動範圍，而決定光罩之半透光區域的 透過率。此乃作爲光罩製造時之管理値。 例如，大多數之情況，對某波長（例如g線）指定使用 的半透過膜的透過率，更進一步其面內分布係將「2 %以下」 作爲管理値而進行。此乃，推測係本來半透光部中曝光量 Φ 之分布被抑制在2%以下之時，藉由其決定的阻劑圖案之殘 膜値（形狀）之分布亦可獲得與其對應者，藉此而設定被轉 印體之適當的加工條件，可達成穩定的製造之故。 本發明人發現，因爲依此管理値的製品管理不一定充 分，視情況，可能會對光罩使用者決定加工條件造成重大 困難。此理由在將上述多階調光罩實際曝光之時，決定形 成於被轉印體上之阻劑圖案的殘膜値、及其面內分布的因 素，並不僅爲預定波長之半透光區域的膜透過率（即使假設 〇 可作成將膜透過率嚴格地控制爲均句時），同時亦與轉印圖 案之圖案設計、更與曝光時採用的光學條件有關。 例如，如第5圖所示，鄰接於2個遮光區域A而被挾 持的半透光區域B之透過光的光強度分布，在當其半透光 區域的線幅變小之時會全體下降，而有峰値變低的傾向。 因而，由於轉印圖案之如何設計，半透光區域之透過率變 成有所不同。尤其，雖然在半透光區域之線幅一定以上之 情況問題爲小，但是隨著線幅變成微細，由於曝光光線的 繞射之影響，上述之透過率下降的傾向大。在此，相對於 200944957 光罩之線幅，通常對預定線幅的面內分布 的管理値作爲範圍之情況較多，但當此面 過率分布重疊時，形成的阻劑圖案之殘膜 圍而產生變動的顧慮。 因而，即使半透過膜的膜透過率管理 於實際之曝光而貢獻於被轉印體上之阻 量，大幅地變動爲2%以上之可能性很大。 又，如上述，通常係藉代表波長（例斑 〇 過率，但是此亦視情況而有不充分的情形 當半透光區域的線幅變成微小之時，曝光 響無法忽略之點爲前述之情形，又，因應 引起的分光特性，在曝光時實際產生的曝 此，僅以代表波長來定義其透過率時也爲 【發明内容】 本發明係鑑於此相關之點而開發。本 供一種多階調光罩及利用該光罩之圖案轉 β 印圖案之圖案設計、半透光區域之膜透過 件，即使在具狹小寬幅的圖案之情況時， 獲得所要之殘膜値的阻劑圖案。 本發明之多階調光罩，係在透明基板 線加以遮光的遮光膜、及使上述曝光光線 透過膜，藉由分別實施圖案加工，而形成 遮光區域、及半透光區域的轉印圖案，其 過上述多階調光罩，當使用g線、h線、i 1 : 1 : 1之照射光，使用數値孔徑（ΝΑ)爲< 使用200nm以內 內分布與上述透 値有超過容許範 成2%以下時，由 齊!I圖案形成的光 ]g線）來表現透 。其理由如下。 光線的繞射之影 於曝光機之光源 光量會變動。因 不充分。 發明之目的在提 印方法，考慮轉 率或曝光光學條 亦可通常穩定地 上形成將曝光光 一部分透過的半 具有透光區域、 特徵爲：爲了通 線各別之強度爲 )· 〇 8，同調性（σ ) 200944957 爲0·8之光學系統，在上述多階調光罩曝光 加以受光而求得上述半透光區域之實效透過 透光區域之實效透過率的光罩面內分布範圍 較佳爲，光罩面內分布範圍爲1.0%以下。 依此構成時，合理地近似於實際曝光時 件而評估實效透過率，根據實效透過率之範 之範圍之間的關係，可將阻劑圖案的殘膜値 範圍內。藉此，即使在具有狹窄的寬幅之圖 ❹ 常穩定地獲得所要之殘膜値之阻劑圖案。 又，本發明之多階調光罩，係包含： 藉由在透明基板上設置之將曝光光線加 膜、及使上述曝光光線一部分透過的半透過 有透光區域、遮光區域、及半透光區域的轉 調光罩， 其特徵爲：上述半透光區域，包含：具 不同的第1半透光區域及第2半透光區域， 〇 光罩，使用g線、h線、i線個別之強度爲1 光，使用數値孔徑爲0.08，同調性爲0.8之 上述多階調光罩曝光，將其透過光加以受光 透光區域之實效透過率時，上述第1半透光 透光區域之實效透過率的光罩面內分布範圍 下的多階調光罩。 藉此，即使在4階調以上的多階調光罩 案的尺寸左右，而可客觀地管理阻劑圖案之 的範圍內》 ，將其透過光 率時，上述半 爲2.0%以下。 使用之曝光條 圍與阻劑圖案 管理在預定的 案時，亦可通 以遮光的遮光 膜，而具備具 印圖案的多階 有實效透過率 在上述多階調 :1 : 1之照射 光學系統，在 而求得上述半 區域及第2半 分別爲2.0%以 中，亦不受圖 殘膜値在預定 200944957 本發明之多階調光罩，係包含： 藉由在透明基板上至少設置將曝光光線加以遮光的遮 光膜且進行圖案化，而具備具有透光區域 '遮光區域、及 半透光區域的轉印圖案的多階調光罩， 其特徵爲：在上述多階調光罩，當使用g線、h線、i 線個別之強度爲1 : 1 : 1之照射光，使用數値孔徑爲0.0 8， 同調性爲0.8之光學系統，在上述多階調光罩曝光，將其 透過光加以受光而求得上述半透光區域之實效透過率時， Φ 上述半透光區域之實效透過率的光罩面內分布範圍爲2.0% 以下的多階調光罩。 藉此，由於半透光區域的透過率與透光區域相等（即不 需要半透過膜），其圖案寬幅非常小，而作爲半透光區域之 功能的情況，其半透光區域之面內分布被控制爲2.0%，因 此可獲得與上述同樣的作用。藉由曝光機之解析界限尺寸 以下的微細遮光圖案，而形成半透光區域，以取代具有半 透過膜的情況也是同樣。 〇 在本發明之多楷調光罩中，上述半透光區域爲在當鄰 接於上述遮光區域而被挾持的半透光部之時，本發明特別 有利。又，上述轉印圖案包含單位圖案排列的重複圖案， 在上述單位圖案中包含鄰接上述遮光區域而被挾持的半透 光部之時，本發明之效果顯著。在此情況，上述多階調光 罩係薄膜電晶體製造用，上述半透光區域係對應於該電晶 體之通道區域者爲較佳。在此情況，當上述通道區域之寬 幅爲5/zm以下時，本發明之效果顯著。 本發明之圖案轉印方法，其特徵爲使用上述多階調光 200944957 罩，藉由照射曝光機發出之曝光光線，而將上述多階調光 罩之轉印圖案轉印到被加工層。此時，在藉由將轉印圖案 轉印到被加工層而形成的阻劑圖案中，對應於上述半透光 區域的部分之膜厚面內分布，可作成在例如ΙΟΟηιη以內， 較佳爲在80nm程度以內。 本發明之薄膜電晶體的製造方法，其特徵爲利用上述 圖案轉印方法進行薄膜電晶體的圖案化。 又，另一本發明之多階調光罩的製造方法，係包含： φ 藉由設置在透明基板上之將曝光光線加以遮光的遮光 膜、及使上述曝光光線一部分透過的半透過膜，而具備具 有透光區域、遮光區域、及半透光區域的轉印圖案的多階 調光罩之製造方法， 其特徵爲具有以下步驟： 使用g線、h線、i線個別之強度爲1:1:1之照射光， 使用數値孔徑爲〇.〇8，同調性爲0.8之光學系統，在上述 多階調光罩曝光， ❹ 把握上述半透光區域對上述曝光光線之實效透過率、 與對應於上述半透光區域之被加工層上之阻劑殘膜値的關 係， 藉由上述已把握的關係，而評估上述多階調光罩之多 階調光罩之製造方法。 又，本發明之多階調光罩的製造方法，係 藉由設置在透明基板上之將曝光光線加以遮光的遮光 膜、及使上述曝光光線一部分透過的半透過膜，而具備具 有透光區域、遮光區域、及半透光區域的轉印圖案的多階 200944957 調光罩之製造方法， 其中包含具有以下步驟： 使用g線、h線、i線個別之強度爲1 : 1 : 1之照射光， 使用數値孔徑爲〇_〇8，同調性爲0.8之光學系統，在上述 多階調光罩曝光， 把握上述半透光區域對曝光光線之實效透過率、與對 應於上述半透光區域之被加工層上之阻劑殘膜値的關係， 從上述已把握的關係，相對於上述實效透過率之變化 ❹ 量而把握上述阻劑殘膜値之變化量， 藉由判斷上述已把握之變化量是否爲預定之容許範圍 內，而評估上述多階調光罩。 又，本發明之多階調光罩的製造方法，係 藉由設置在透明基板上之將曝光光線加以遮光的遮光 膜、及使上述曝光光線一部分透過的半透過膜，而具備具 有透光區域、遮光區域、及半透光區域的轉印圖案的多階 調光罩之製造方法， φ 其中多階調光罩之製造方法包含： 使用g線、h線、i線個別之強度爲ι:ι:ι之照射光， 使用數値孔徑爲0.08，同調性爲0.8之光學系統，在上述 多階調光罩曝光， 把握上述半透光區域對曝光光線之實效透過率、與對 應於上述半透光區域之被加工層上之阻劑殘膜値的關係， 根據上述已把握的關係，而決定上述多階調光罩之實 效透過率的容許範圍基準。 本發明之多階調光罩的製造方法，係包含： -10- 200944957 藉由在透明基板上至少設置將曝光光線加以遮光的遮 光膜且進行圖案化，而具備具有透光區域、遮光區域、及 半透光區域的轉印圖案的多階調光罩之製造方法， 其中具有以下步驟： 使用g線、h線、i線個別之強度爲1 : 1 : 1之照射光， 使用數値孔徑爲0.08，同調性爲0.8之光學系統，在上述 多階調光罩曝光， 把握上述半透光區域對曝光光線之實效透過率、與對 ❹ 應於上述半透光區域之被加工層上之阻劑殘膜値的關係， 藉由上述已把握的關係，而評估上述多階調光罩之多 階調光罩的製造方法。 本發明之多階調光罩的製造方法，係包含： 藉由在透明基板上至少設置將曝光光線加以遮光的遮 光膜且進行圖案化，而具備具有透光區域、遮光區域、及 半透光區域的轉印圖案的多階調光罩之製造方法， 其中具有以下步驟： 〇 使用g線、h線、i線個別之強度爲1:1:1之照射光， 使用數値孔徑爲0.08，同調性爲0.8之光學系統，在上述 多階調光罩曝光， 把握上述半透光區域對曝光光線之實效透過率、與對 應於上述半透光區域之被加工層上之阻劑殘膜値的關係， 從上述已把握的關係，相對於上述實效透過率之變化 量而把握上述阻劑殘膜値之變化量， 藉由判斷上述已把握之變化量是否爲預定之容許範圍 內，而評估上述多階調光罩之多階調光罩的製造方法。 -11 - 200944957 本發明之多階調光罩的製造方法，係亦包含： 藉由在透明基板上至少設置將曝光光線加以遮光的遮 光膜且進行圖案化，而具備具有透光區域、遮光區域、及 半透光區域的轉印圖案的多階調光罩之製造方法， 其中包含： 使用g線、h線、i線個別之強度爲1:ι:ι之照射光， 使用數値孔徑爲0.08，同調性爲0.8之光學系統，在上述 多階調光罩曝光， 〇 把握上述半透光區域對曝光光線之實效透過率、與對 應於上述半透光區域之被加工層上之阻劑殘膜値的關係， 根據上述已把握的關係，而決定上述多階調光罩之實 效透過率的容許範圍基準之多階調光罩的製造方法。 本發明之多階調光罩，係藉由在透明基板上形成將曝 光光線加以遮光的遮光膜、及使上述曝光光線一部分透過 的半透過膜，且將其等分別實施圖案加工，而形成具有透 光區域、遮光區域、及半透光區域的轉印圖案；當在上述 〇 多階調光罩，使用g線、h線、i線各別之強度爲1: 1: i 之照射光，使用數値孔徑（ΝΑ)爲0.08、同調性（σ)爲0.8 之光學系統’在上述多階調光罩曝光，將其透過光加以受 光而求得上述半透光區域之實效透過率時，上述半透光區 域之實效透過率的光罩面內分布範圍被調整爲上述管理値 之2.0 %以下，故即使在具有狹窄寬幅的圖案之情況時，亦 可通常穩定地獲得所要之殘膜値的阻劑圖案。 又本發明之上述效果，即使在4階調以上的多階調光 罩，或具有由此微細之遮光圖案所構成的半透光區域之多 -12- 200944957 階調光罩中亦可獲得。 又，依本發明時，可評估多階調光罩，或獲得多階調 光罩之基準。 【實施方式】 以下將參照添加圖式而詳細地說明本發明之實施形 態。 至今，在多階調光罩之管理，構成半透光區域的半透 過膜之透過率，與圖案形狀無關，而係以藉其膜及代表波 〇 長（例如g線）決定的膜固有的透過率來規定。在根據依此 規定的透過率而設定半透過膜的膜材及厚度之情況，半透 光區域的面積相對於曝光機的解析度係充分地大，當曝光 光線的波長等於代表波長時，並未特別產生問題。但是， 當半透光區域之面積及寬幅相對於曝光機的解析度變成微 小之時，由於鄰接於半透光區域的遮光部或透光部之影 響，在實際曝光時有變成與半透過膜固有之透過率不同的 値之情形。此乃與由圖案形狀及曝光機之光學條件引起曝 © 光光線的繞射有關係。 例如，在薄膜電晶體（TFT)用之多階調光罩中，將相當 於通道部之區域作爲半透光區域，能以挾持其之形態將相 當於鄰接之源極及汲極的區域以遮光部構成。在此光罩 中，隨著通道部之尺寸（寬幅）變小，與鄰接的遮光部之境 界在實際之曝光條件下變模糊，通道部之曝光光線透過率 變成比半透過膜的透過率更低。在此，所謂「半透過膜的 透過率」係指形成透過基板上之該膜，在充分寬廣區域中， 藉由照射代表波長的光之時透過該區域之光量對透光區域 -13- 200944957 之透過光量的比而規定者，係藉由該膜之組成及膜厚而決 定。又，所謂「充分寬廣區域」係指即使該區域之寬幅的 變化而透過率並不實質地變化之區域。 在最近的薄膜電晶體（TFT)中，提案有：與以往比較將 通道部的寬幅作成爲小，藉此而提高液晶的動作速度，或 者將通道部之大小作爲爲小藉以增加液晶之亮度等的技 術。因此，圖案作成微細化，推測係爲了達到此目的而進 一步提高對阻劑圖案的要求精度。本發明人考量在此狀況 φ 下，針對光罩之面積及寬幅爲小的區域，並不考慮半透過 膜的透過率，但若不考慮含有圖案形狀之不同等要因之透 過率的話，將該圖案轉印到被轉印體上之時，會無法形成 所要的阻劑圖案。尤其，在上述TFT製造用光罩中，形成 通道部之同一形狀的單位圖案係排列而形成，完全無法阻 止在此等之圖案尺寸產生微小變動。此種變動，當與膜透 過率之變動重疊時，即使兩者爲在規格內之數値時，藉由 該光罩獲得的阻劑圖案之殘膜値，亦會超過預測而變動。 © 當然，亦能藉由將線幅及膜透過率之分布範圍作成更 小’亦可將轉印結果的分布作成爲小。但是，在此方法中， 技術上的難度高，而有過剩品質且製品良率降低之不利情 況'另一方面’亦考慮採取行動使圖案的線幅變動對膜透 過率的變動相抵消的話，結果實效透過率的變動會變小。 結果’依照在實際曝光時顯示透過光罩的光量的實效透過 率來管理光罩的品質，可說是最合理的。 @而’本發明人發現，著眼於在使曝光機的曝光條件 @似的條件下’利用攝影手段實際地將照射光照射在光罩 -14- 200944957 之時的圖案加以拍攝，藉此而獲得含有圖案形狀之不同等 之要因的轉印圖案像，根據此轉印圖案像可決定半透光區 域之半透過膜的膜材及厚度等。其後，根據此見解，本發 明人發現，藉由管理半透光區域之實效透過率，可將半透 光區域之阻劑膜的殘膜値作成在所要之値。此在具有狹小 寬幅之圖案的情況特別有效。 在此，在本發明中，係使用實效透過率來取代以往將 膜透過率作爲管理値的方法而進行管理。所謂此「實效透 φ 過率」係除了膜固有的透過率以外，尙含有圖案之尺寸或 線幅（CD :臨界尺寸）及光學條件（光源波長、開口度、（7値 等）之要因的透過率，係反映實際之曝光環境的透過率。但 是，在光罩使用時實際使用的曝光機之曝光條件並不一定 嚴密地一致。因而，根據各曝光機之曝光條件而把握實效 透過率並無效率。另一方面，在液晶裝置製造用等之光罩 中，係使用具有i線4線之寬廣的波長域之曝光光線，而 將光罩上之轉印圖案轉印到被轉印體上。因此，可將實質 φ 上以1:1:1之強度含有i線（365nm)、h線（405nm)、g線 (4 3 6nm)之曝光光線，作爲用於把握實效透過率之曝光光線 而作爲標準。又，曝光機的光學系統，可將數値孔徑（NA) 爲0.08，同調性（σ )爲0.8之光學系統作爲標準。即，在如 此的光學的條件下，只要半透光區域之實效透過率的面內 分布爲2.0%的話，便能使用如此的光罩，使用實際之曝光 機而容易地獲得具有所要之阻劑殘膜値的阻劑圖案。 本發明人，如第1圖所示，在鄰接於以遮光膜23構成 的遮光區域而被挾持的半透光區域之電晶體的通道區域 -15- 200944957 (寬幅D:在此，雖然使用D = 5 ym，但即使使用不同的寬 幅D時結果亦不變動），調查：當變更半透過膜22之透過 率時之實效透過率Τα與以此多階調光罩形成阻劑圖案時之 殘膜値之間的關係。此外，在曝光光線係使用實質上以1: 1: 1 之強度含有 i 線（365nm)、h 線（405nm)、g 線（436nm) 之曝光光線。在光學系統中係使用數値孔徑（ΝΑ)爲0.08， 同調性（σ)爲0.8的光學系統。其結果顯示於第2(a)圖。 在此，使用第2(a)圖的話，藉由上述直線關係的近似 0 式，可求出殘膜値之相對於實光罩之實效透過率的變動量 (即光罩面內分布範圍）的變動量。即，實光罩之實效透過 率Τα(%)取爲X軸，將殘膜値（A )取爲y軸時，判明：兩者 的關係可藉由y = -366.825x + 21039.970之直線近似式（藉由 實測獲得的實測式）而表示。因此，殘膜値（y)的變動量，可 藉由上述直線近似式之斜率來表示。例如，對應於ΔΤα=1 % 的殘膜變動量成爲約36.6nm(斜率的絕對値）。由此，實效 透過率Τα的變動量（範圍）（％)與殘膜値之變動量（範圍）的關 φ 係可藉第2(b)圖所示之直線表示。即，作爲對Τα的管理範 圍（變動量）之轉印結果的殘膜値之範圍（變動量），如第2(b) 圖所示，可藉具有約3 66 Α之傾斜角表示。 如從第2(b)圖可知，只要Τα的分布（即，變動量）爲2% 以下的話，則殘膜値的分布下降到80nm，得知精緻的阻劑 殘膜値管理變成可能。 本發明人係著眼於：如此的實效透過率的範圍（變動 量），係直接支配實際形成的阻劑圖案之殘膜値的範圍（變 動量）者。其後，本發明人藉由使用此關係發現，以實效透 -16- 200944957 過率的管理來進行殘膜値之管理，即使在具有狹小寬幅的 圖案之情況，亦可通常穩定地獲得所要的殘膜値之阻劑圖 案，而發想本發明。 例如，如上述，求出半透光區域之實效透過率、及與 其對應之被加工層上之阻劑膜的殘膜値之關係，藉此可獲 得相對於實效透過率的變化量的阻劑膜之殘膜値變化。藉 由上述關係，通過作成在被加工層上可獲得的阻劑圖案之 殘膜値，亦可評估光罩之良否。又，考慮欲將殘膜値納入 φ 預定範圍內之光罩使用者，藉由參照上述變化量之相互關 係，可評估光罩之良否。 或者，根據上述之關係，亦可決定半透光區域之實效 透過率的容許範圍基準。例如，即使光罩之半透光區域的 容許變動幅度爲2%以上之預定値時，藉由欲採用其的電子 裝置，亦可產生以充分的品質可製造之評估。 在此，所謂「半透光區域之實效透過率」，係指在照射 預定之曝光光線時，不會僅依存於半透過膜固有的膜透過 φ 率，係藉由光罩之圖案設計等而實際在半透光區域產生的 透過率之謂。此外，作爲實效透過率，可作成透過半透光 區域之光強度分布中具有最大値之部分的透過率。此乃， 例如使用此光罩，在被轉印體上形成正型阻劑之阻劑圖案 時，上述透過率係具有與在半透光區域產生的阻劑殘膜値 之最小値相關之故。在此，所謂「光罩面內分布範圍」係 指形成在光罩的轉印圖案區域全體之面內分布範圍之謂。 關於如此的範圍管理，例如，在薄膜電晶體之通道區域的 寬幅爲5/zm以下時特別有效。 -17- 200944957 作爲如上述用於測定實效透過率的裝置，例如可舉出 第3圖所示的裝置。此裝置，主要係由光源1、將來自光 源1的光照射到光罩3的照射光學系統2、將透過光罩3 的光成像的接物透鏡系4、將通過接物透鏡系4獲得的像 加以拍攝的攝像手段5構成。 光源1係發出預定波長的光束者。例如，可使用函素 燈、金屬鹵化物燈、UHP燈（超高壓水銀燈）等，因應於適 當需要可使用光學濾光片，以作爲光源1。 〇 照射光學系統2係引導來自光源1的光且將光照射到 光罩3。此照射光學系統2爲了將數値孔徑（NA)設定爲所 要値，而具備有第1光圈機構（第1開口光圏7 A)。此照射 光學系統2宜具備用於調整光罩3的光之照射範圍的第1 視野光圈6A。通過此照射光學系統2的光，係照射到藉由 光罩保持具3a而保持的光罩3。此照射光學系統2係配置 在第1筐體13A內。 光罩3藉由光罩保持具3a而保持》此光罩保持具3a ® 係將光罩3之主平面作成大致筆直的狀態而支持此光罩3 之下端部及側緣部附近，使此光罩3傾斜固定而被保持。 此光罩保持具3a，作爲光罩3，爲可保持大型（例如主平面 爲1 220mmxl400mm，厚度爲13mm者）且種種大小的光罩3。 此外，所謂「大致筆直」係第3圖中以0表示從垂直算起 的角度約10度以內之意。照射在光罩3的光，穿過此光罩 3，而入射到接物透鏡系4。 接物透鏡系4係例如由使穿過光罩3的光入射，在此 光束加上無限遠修正而作成平行光的第1群（模擬透 * 18 - 200944957 鏡）4a、及使通過此第1群的光束成像的第2群（成像透鏡）4b 構成。模擬透鏡4a具備第2光圈機構（第2開口光圈7 B)， 數値孔徑（NA)成爲可變。第2開口光圈7B具備有第2視野 光圈6 B。通過接物透鏡系4的光束係利用攝像手段5受光。 此接物透鏡系4係配置在第2筐體13B內。 此攝像手段5拍攝光罩3之像。可使用例如CCD等之 攝像元件作爲此攝像手段5。 在此裝置中，由於照射光學系統2之數値孔徑及接物 φ 透鏡系4之數値孔徑分別成爲可變，故能將照射光學系統 2之數値孔徑相對於接物透鏡系4之數値孔徑的比値，即 sigma値（σ :同調性）作成可變。藉由適當地選擇上述條 件，可使曝光時的光學條件再現或近似。 又，在此裝置中設置有：運算手段（即電腦）11，進行 藉由攝像手段5獲得的拍攝影像有關的影像處理、運算、 與預定之臨界値之比較及顯示等；控制手段14，具有顯示 手段12;及移動操作手段15，變更第1筐體13Α的位置。 φ 因此，使用所獲得的拍攝影像或根據其而獲得的光強度分 布，藉由控制手段14而進行預定之運算，可求出在使用其 他曝光光線之條件下之拍攝影像或光強度分布及透過率。 在本發明中把握半透光部之實效透過率之時所使用的 光學系統方面，係採用數値孔徑爲〇.〇8，同調性爲0.8之 光學系統。作爲曝光光線，係採用將g線、h線、i線個別 之照射光強度設爲1: 1: 1之曝光光線。作爲光學系統之 參數，雖然視曝光機而有若干變化，但是上述數値係其標 準的數値，在將光罩搭載於各曝光機之前，確認光罩之性 -19- 200944957 能係極適當。又，照射光之波長分布，雖然在1線~2線之 範圍係視曝光機或時間經過而有若干變化，但是將此等i 線、h線、g線之波長作成1: 1: 1之強度分布者，在光罩 的評估係可作爲最標準而使用。換言之，在此等條件下， 只要係滿足管理値之光罩的話，能以充分的角度推測在實 際之曝光條件下供實用之情況的性能。 本發明相關之多階調光罩，具備有：藉由設於透明基 板上之將曝光光線加以遮光之遮光膜、及使上述曝光光線 〇 一部分通過之半透過膜而構成透光區域、遮光區域、及半 透光區域之轉印圖案。 作爲透明基板，可舉出玻璃基板等。又，作爲將曝光 光線加以遮光的遮光膜，可舉出：鉻膜等之金屬膜、矽膜、 金屬氧化膜、如矽化鉬膜等之金屬矽化物膜。又，該遮光 膜在表面宜具有反射防止膜。作爲該反射防止膜的材料， 可舉出：鉻之氧化物、氮化物、碳化物、氟化物等。作爲 使上述曝光光線一部分透過之半透過膜，可使用：鉻之氧 〇 化物、氮化物、碳化物、氧化氮化物、氧化氮化碳化物、 或金屬矽化物等。尤其，作爲半透過膜，宜爲氧化鉻膜、 氮化鉻膜、如矽化鉬膜之金屬矽化物膜 '或其氧化物、氮 化物、氧氮化物、碳化物等。 上述之多階調光罩，可採用如下述之2種類之構造的 任一項。第1構造，如第4(a)圖所不’係在透明基板21之 遮光區域A及半透光區域B上形成半透過膜22,在半透過 膜22之遮光區域A上形成遮光膜23而成之構造。第2構 造，如第4(b)圖所示，係在透明基板21之遮光區域A上積 -20- 200944957 層遮光膜23及半透過膜22，在透明基板21 B上形成半透過膜22而成之構造。或者，又 效透過率不同的半透過區域，而作成4階調. 光罩。 第4(a)圖所示之第1構造，例如可如下 即，準備在透明基板21上將半透過膜及遮光 積層而成之光罩胚料（photomask blank)，在此 成對應於遮光區域A及半透光區域B的區域 φ 將此阻劑圖案作爲遮罩，將露出的遮光膜23 次，將阻劑圖案或遮光膜23作爲遮罩，而將 膜22加以蝕刻而形成透光區域。接著，在至 域A的區域形成阻劑圖案，將此阻劑圖案作 出遮光膜23進行蝕刻。 第4(b)圖所示之第2構造，例如可如下 即，準備在透明基板21上形成遮光膜23的 此光罩胚料上形成對應於遮光區域A的區域 〇 將此阻劑圖案作爲遮罩，將露出的遮光膜23 次，將阻劑圖案除去之後，在透明基板21之 過膜22之薄膜。其後，在對應於半透光區域 域B及遮光區域A)的區域形成阻劑圖案，將 爲遮罩，將露出的半透過膜22進行触刻。 本發明之多階調光罩的製造中，可採J 法。即，藉由半透過膜的成膜條件之控制、 描繪、顯影、蝕刻步驟之控制，可將半透光 過率的分布作成爲小。但是，在本發明中， 之半透光區域 可藉由形成實 以上之多階調 列方式製作。 膜，依此順序 光罩胚料上形 之阻劑圖案。 進行蝕刻。其 露出的半透過 少含有遮光區 爲遮罩，將露 列方式製作。 光罩胚料，在 之阻劑圖案。 進行蝕刻。其 全面形成半透 B(或半透光區 此阻劑圖案作 毛如以下的方 及轉印圖案之 區域之實效透 只要將半透光 -21 - 200944957 區域之實效透過率的分布在可控制於2.0 %以內的範圍內進 行的話即可，不需要如以往僅將膜固有的透過率之分布作 成2.0%以下。又，即使係使用代表波長將膜透過率之分布 作成2.0%以下時，未必可獲得本發明之效果。 在製造將管理値作成充分的本發明之光罩時，係將半 透過膜之膜透過率精度或轉印圖案之形成精度之要因，並 非個別考慮，而係考慮實效透過率精度以進行管理的話即 可》例如，在半透過膜之膜透過率精度有界限，而產生膜 〇 厚度分布之情況，可操作轉印圖案之線幅，而抵消此膜厚 分布引起而產生的透過率分布。具體上，在膜厚容易變成 小的區域，預先把握其傾向之後，可將形成於此區域的通 道部之寬幅作成爲小。 在本發明中，藉由以上的方法或周知之方法，對已製 出的光罩，使用如第3圖的裝置，把握其實效透過率範圍， 可識別達成本發明之效果者。涵蓋形成於光罩之轉印圖案 全域，只要半透光區域之實效透過率的面內分布範圍（變動 φ 量）爲2.0%以下的話，即可充分達成本發明之效果。又，在 範圍超過2.0%之情況，藉由通過光罩圖案之修正、膜厚之 修正、膜質之改變等之修正步驟，亦可作成本發明之光罩。 在光罩圖案之修正中，可適當使用周知的修正方法（使用 CVD及雷射的方法、FIB(Focused Ion Beam,聚焦離子束） 法等）等。在藉由膜厚之修正、膜質之改善而變化膜透過率 之時，亦可進行將藥液或能量照射賦予膜表面的表面處理》 在使用如此多階調光罩的圖案轉印中，使用將：設置 於透明基板上將曝光光線加以遮光的遮光膜、及使上述曝 -22- 200944957 光光線之一部分透過的半透過膜分別進行圖案化，而藉以 形成具有透光區域、遮光區域、及半透光區域的轉印圖案 的多階調光罩，藉由照射曝光機之曝光光線，而將該轉印 圖案轉印到被加工層。尤其，較佳爲利用此圖案轉印方法 而進行薄膜電晶體之圖案化。 如上述，依照本發明相關之多階調光罩，即，半透光 區域之實效透過率的範圍爲2%以下之多階調光罩時，根據 實效透過率的範圍與阻劑圖案之殘膜値的範圍之間的關 φ 係，可將阻劑圖案之殘膜値管理在預定範圍內。藉此，即 使在具有狹小寬幅之圖案的情況，亦可通常穩定地獲得所 要之殘膜値的阻劑圖案。 此外，使用具備實效透過率彼此不同的多數個半透光 區域之光罩，在被轉印體上之阻劑膜設置多個段差之情況 的光罩中，當然可使用上述之管理値，對具有個別所要之 實效透過率的半透光區域實施評估。 本發明並不限定於上述之實施形態，可適當地變更而 φ 實施。例如，在上述實施形態中，雖然係針對實效透過率 的範圍爲2%以下之情況而說明，但是本發明之技術思想， 係在實效透過率的範圍與殘膜値的範圍之間有比例關係， 根據此關係，即藉由將實效透過率作成管理指標，可更正 確地管理阻劑圖案之殘膜値的範圍，因此因應於要求的阻 劑圖案之殘膜値的範圍，可適宜地變更實效透過率的範 圍。又，在上述實施形態之構件的個數、尺寸、處理程序 等係爲一個例子而已，在可發揮本發明之效果的範圍內， 可作各種變更而實施。其他，只要在不違離本發明之目的 -23- 200944957 的範圍的話，亦可適宜地變更而實施。 例如，在4階調以上之多階調光罩中，有包含實效透 過率不同的第1、第2半透光區域之情況。而本發明亦可 適用於此種多階調光罩。在此種情況，在各第1、第2半 透光區域中，藉由將實效透過率之面內分布管理成爲2%以 下，可獲得本發明之效果。 又，亦可藉由曝光機之解析界限尺寸以下的微細遮光 圖案來形成半透光區域，以取代具有半透過膜。 © 【圖式簡單說明】 第1圖係顯示鄰接遮光區域而被挾持的半透光區域之 電晶體的通道區域之圖。 第2(a)圖係顯示實效透過率與殘膜値之間的關係之 圖，第2(b)圖係顯示實效透過率之範圍與殘膜値之範圍之 間的關係之圖。 第3圖係顯示使曝光機之曝光條件再現之裝置的一例 之圖。 胃 第4(a)圖、第4(b)圓係顯示本發明之實施形態相關的 多階調光罩的構造之圖。 第5(a)圖、第5(b)圖係顯示遮光膜與半透過膜之圖案 及與其對應的光強度分布之圖。 【主要元件符號說明】 1 光源 2 照射光學系 3 光罩 -24- 200944957BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cover used in a photolithography step and a pattern transfer method using the same. [Prior Art] Conventionally, in the manufacture of an electronic device such as a liquid crystal device, a photolithography step is employed to form a resist pattern. Namely, the mask of the predetermined pattern is exposed to a resist film formed on the layer to be processed under a predetermined exposure condition to transfer a pattern, and the resist film is developed to form a resist pattern. This is followed by etching the mask to etch the processed layer. One type of such a mask is known as a multi-step dimming mask having a light-shielding region that is shielded by light, a translucent region through which the exposure light is transmitted, and a portion through which the exposure light is transmitted. This allows the amount of light of the exposure light to be made different depending on the area. Therefore, the grading mask is subjected to exposure and development, whereby a resist pattern having at least 残 residual film 値 (including residual film 値0) can be formed. By realizing a multi-step dimming mask having a resist pattern such as a dissimilar residual film, it is useful to be able to achieve the efficiency of the steps in manufacturing an electronic device such as a liquid crystal device by reducing the number of covers. The semi-transmissive region of the multi-step dimming mask, for example, can transmit a portion of the exposure light by using a semi-transmissive film having a desired transmittance (for example, refer to Japanese Patent Laid-Open Publication No. 2005-25771-2 (Patent 3, now The semi-transmission rate setting (membrane quality, film thickness selection) of the multi-step dimming mask using a semi-transmissive film is based on the use of the multi-step dimming step by using a pre-uranium engraving agent The pattern is set such that the exposure light region and the grading mask are used in such a plurality of thicknesses that the majority of the light is used to form a light lithography. The area of the translucent mask is added to the process of the 200944957 film. That is, the reticle user first predicts a resist pattern obtained when the transfer pattern of the reticle is transferred onto the transfer target by exposure. Thereafter, in the resist pattern desired to be obtained, the transmittance of the semi-transmissive region of the mask is determined in accordance with the predetermined portion of the residual film quality of the resist and its allowable variation range. This is used as a management tool for the manufacture of reticle. For example, in most cases, the transmittance of a semi-transmissive film to be used for a certain wavelength (for example, g line) is further determined by the "in-plane" distribution of "2% or less". Therefore, it is estimated that when the distribution of the exposure amount Φ in the semi-transmissive portion is suppressed to 2% or less, the distribution of the residual film 形状 (shape) of the resist pattern determined by the same can be obtained. By setting appropriate processing conditions of the object to be transferred, stable manufacturing can be achieved. The inventors have found that the management of the products according to this management is not necessarily sufficient, and depending on the situation, it may cause significant difficulties for the reticle user to determine the processing conditions. For this reason, when the above-described multi-step dimmer is actually exposed, the residual film 形成 of the resist pattern formed on the transfer target and the in-plane distribution thereof are determined, and it is not only a semi-transmissive region of a predetermined wavelength. The film transmittance (even if 〇 can be made to strictly control the film transmittance to a uniform sentence), is also related to the pattern design of the transfer pattern and the optical conditions used in the exposure. For example, as shown in Fig. 5, the light intensity distribution of the transmitted light of the semi-transmissive region B held adjacent to the two light-shielding regions A is lowered as the line width of the semi-transmissive region becomes smaller. And there is a tendency for peaks to become lower. Therefore, the transmittance of the semi-transmissive region becomes different due to how the transfer pattern is designed. In particular, although the problem that the line width of the semi-transmissive region is more than a certain amount is small, as the line width becomes fine, the above-described transmittance tends to decrease due to the influence of the diffraction of the exposure light. Here, compared with the line width of the 200944957 reticle, the management of the in-plane distribution of the predetermined line width is usually a large range, but when the surface over-rate distribution overlaps, the residual film circumference of the formed resist pattern is formed. And there are concerns about change. Therefore, even if the film transmittance of the semi-transmissive film is controlled by the actual exposure and contributes to the resistance on the transfer target, the possibility of greatly varying by 2% or more is large. Further, as described above, the representative wavelength is usually used (for example, the case ratio is insufficient, but if the line width of the semi-transmissive region becomes minute, the exposure noise cannot be ignored. In other words, in view of the spectroscopic characteristics caused by the exposure, the actual exposure generated at the time of exposure is also defined by the representative wavelength. [Invention] The present invention has been developed in view of this related point. The grading mask and the pattern design using the pattern of the reticle to rotate the β-print pattern, and the film-transmissive member of the semi-transmissive region, obtain a resist pattern of the desired residual film even in the case of a narrow-width pattern The multi-step dimming cover of the present invention is a light-shielding film that shields light on a transparent substrate line, and a transfer pattern that allows the exposure light to pass through the film and is patterned by a pattern to form a light-shielding region and a semi-transmissive region. , the above multi-step dimmer, when using g-line, h-line, i 1 : 1 : 1 illumination, using the number of apertures (ΝΑ) < When the inner distribution within 200 nm and the above-mentioned transmission have an excess of 2% or less, the light formed by the ?I pattern is expressed as a light]. The reason is as follows. The diffraction of the light affects the amount of light from the exposure machine. Insufficient. OBJECT OF THE INVENTION In the printing method, in consideration of the conversion rate or the exposure optical strip, a semi-transmissive region through which a part of the exposure light is transmitted can be formed in a stable manner, and the characteristic is that the intensity of each of the lines is )8, homology. (σ) 200944957 is an optical system of 0. 8 in which the above-mentioned multi-step dimmer is exposed to light to obtain an effective coverage of the semi-transmissive region through the transparent transmission region. Therefore, the in-plane distribution range of the mask is 1.0% or less. According to this configuration, the effective transmittance can be evaluated by approximating the actual exposure time, and the residual film of the resist pattern can be within the range of the range of the effective transmittance. Thereby, the resist pattern of the desired residual film is stably obtained even in the case of having a narrow width. Moreover, the multi-step dimming cover of the present invention comprises: a semi-transmissive light-transmitting region, a light-shielding region, and a semi-transparent light which are provided on the transparent substrate to apply the exposure light and partially transmit the exposure light. The transmissive mask of the region is characterized in that: the semi-transmissive region comprises: a first semi-transmissive region and a second semi-transmissive region, and a dice mask, which uses g lines, h lines, and i lines. The first semi-transmissive light-transmissive region is used when the intensity is 1 light, and the multi-step dich mask having a number of apertures of 0.08 and a homology of 0.8 is exposed and transmitted through the light to the effective transmittance of the light-receiving light-transmitting region. A multi-step dimmer with a range of effective transmissive coverage within the mask. Thereby, even in the range of the multi-step dimming cover of the fourth-order or higher, the range of the resist pattern can be objectively managed, and when the light transmittance is transmitted, the half is 2.0% or less. When the exposure strip and the resist pattern are used in the predetermined case, the light-shielding light-shielding film can also be used, and the multi-step effective transmittance of the printed pattern is in the above-mentioned multi-tone: 1:1 illumination optical system. Therefore, the above-mentioned half area and the second half are respectively 2.0%, and are not subject to the residual film of the present invention. The multi-step dimming cover of the present invention is intended to be: at least set on the transparent substrate a multi-step dimming cover having a light-shielding film that is shielded by light and patterned, and having a transfer pattern having a light-transmitting region 'light-shielding region and a semi-transmissive region, wherein the multi-step dimming cover is When using the g-line, h-line, and i-line individual intensity of 1:1:1, use an optical system with a number of apertures of 0.08 and a homology of 0.8, and expose it in the above-mentioned multi-step dimmer. When the effective transmittance of the semi-transmissive region is obtained by light receiving light, the effective transmittance of the semi-transmissive region of the semi-transmissive region is a multi-step dimming cover having a mask in-plane distribution range of 2.0% or less. Thereby, since the transmittance of the semi-transmissive region is equal to that of the light-transmitting region (that is, the semi-transmissive film is not required), the pattern width is very small, and as a function of the semi-transmissive region, the surface of the semi-transmissive region The internal distribution is controlled to 2.0%, and thus the same effect as described above can be obtained. The same applies to the case where the semi-transmissive region is formed by the fine light-shielding pattern below the analysis limit size of the exposure machine, instead of having a semi-transmissive film. In the multi-layer dimming cover of the present invention, the semi-transmissive region is particularly advantageous when the semi-transmissive portion is held adjacent to the light-shielding region. Further, the transfer pattern includes a repeating pattern in which the unit pattern is arranged, and the effect of the present invention is remarkable when the unit pattern includes a semi-transmissive portion that is held adjacent to the light-shielding region. In this case, in the above-described multi-step dimming-type film transistor manufacturing, it is preferable that the semi-transmissive region corresponds to the channel region of the electro-crystal. In this case, the effect of the present invention is remarkable when the width of the above-mentioned passage region is 5/zm or less. The pattern transfer method of the present invention is characterized in that the transfer pattern of the multi-step dimming cover is transferred to the layer to be processed by irradiating the exposure light emitted from the exposure machine using the multi-step dimming 200944957 cover. At this time, in the resist pattern formed by transferring the transfer pattern to the layer to be processed, the in-plane distribution of the film thickness corresponding to the portion of the semi-transmissive region can be made, for example, within ΙΟΟηηη, preferably Within 80nm. A method of producing a thin film transistor of the present invention is characterized in that the patterning of the thin film transistor is carried out by the above-described pattern transfer method. Moreover, another method of manufacturing the multi-step dimming cover of the present invention includes: φ a light shielding film that shields light from exposure light provided on a transparent substrate, and a semi-transmissive film that transmits a part of the exposure light. A method for manufacturing a multi-step dimming cover having a transfer pattern of a light-transmitting region, a light-shielding region, and a semi-transmissive region, characterized in that the method has the following steps: The intensity of each of the g-line, the h-line, and the i-line is 1: 1:1 illumination, using an optical system with a number of apertures of 〇.〇8 and a homology of 0.8, exposed in the above-mentioned multi-step dimmer, 把握 grasping the effective transmittance of the above-mentioned semi-transmissive region to the above-mentioned exposure light, The manufacturing method of the multi-step dimming cover of the multi-step dimming cover is evaluated by the above-described grasped relationship with the relationship of the resist residual film on the layer to be processed corresponding to the semi-transmissive region. Moreover, the method for manufacturing a multi-step dimming cover of the present invention includes a light-shielding film that is provided on a transparent substrate and that shields light from exposure light, and a semi-transmissive film that transmits a part of the exposure light. The method for manufacturing a multi-level 200944957 dimming cover for a transfer pattern of a light-shielding region and a semi-transmissive region, comprising the steps of: using a g-line, an h-line, and an i-line to have an intensity of 1: 1 : 1 Light, using an optical system with a number of apertures of 〇_〇8 and a homology of 0.8, exposed in the above-mentioned multi-step dimmer, grasping the effective transmittance of the semi-transmissive region to the exposure light, and corresponding to the semi-transmission The relationship between the residual agent and the residual film on the layer to be processed in the region, and the amount of change in the resist residual film 把握 is grasped from the above-described grasped relationship with respect to the change in the effective transmittance, and it is judged by the above judgment The above-described multi-step dimmer is evaluated whether the amount of change is within a predetermined allowable range. Moreover, the method for manufacturing a multi-step dimming cover of the present invention includes a light-shielding film that is provided on a transparent substrate and that shields light from exposure light, and a semi-transmissive film that transmits a part of the exposure light. The manufacturing method of the multi-step dimming cover of the transfer pattern of the light-shielding area and the semi-transmissive area, φ wherein the manufacturing method of the multi-step dimming cover comprises: using the g line, the h line, and the i line, the individual intensity is ι: ι:ι illuminating light, using an optical system with a number of apertures of 0.08 and a homology of 0.8, exposed in the above-mentioned multi-step dimmer, grasping the effective transmittance of the semi-transmissive region to the exposure light, and corresponding to the above half The relationship between the resist residual film on the layer to be processed in the light-transmitting region determines the allowable range reference of the effective transmittance of the multi-step dimming cover based on the above-described grasped relationship. A method for manufacturing a multi-step dimming cover according to the present invention includes: -10-200944957 comprising a light-transmitting region and a light-shielding region provided by providing at least a light-shielding film that shields light from exposure light on a transparent substrate And a method for manufacturing a multi-step dimming cover of a transfer pattern of a semi-transmissive region, wherein the method has the following steps: using a g-line, an h-line, and an i-line, each of which has an intensity of 1: 1 : 1 , using a number of apertures An optical system of 0.08 and a homology of 0.8, exposed in the multi-step dimmer cover, grasping the effective transmittance of the semi-transmissive region to the exposed light, and the corresponding layer on the processed layer of the semi-transmissive region The relationship between the resist residual film and the multi-step dimming cover of the multi-step dimming cover is evaluated by the above-described grasped relationship. A method of manufacturing a multi-step dimming cover according to the present invention includes: providing a light-shielding film that shields light from exposure light on at least a transparent substrate and patterning it, and having a light-transmitting region, a light-shielding region, and a semi-transparent light A method for manufacturing a multi-step dimmer of a transfer pattern of a region, wherein the method has the following steps: 〇 using a g-line, an h-line, and an i-line, each having an intensity of 1:1:1, using a number of apertures of 0.08, An optical system having a homology of 0.8, exposed in the multi-step dimmer cover, grasping the effective transmittance of the semi-transmissive region to the exposure light, and the residual film of the resist on the processed layer corresponding to the semi-transmissive region According to the above-described grasped relationship, the amount of change in the resist residual film 把握 is grasped with respect to the amount of change in the effective transmittance, and it is evaluated by judging whether or not the above-described changed amount of change is within a predetermined allowable range. A method of manufacturing a multi-step dimmer of the multi-step dimmer described above. -11 - 200944957 The method for manufacturing a multi-step dimmer cover according to the present invention, further comprising: providing a light-transmitting region and a light-shielding region by providing at least a light-shielding film that shields the exposure light from the transparent substrate And a method for manufacturing a multi-step dimming cover of a transfer pattern of a semi-transmissive region, comprising: using g-line, h-line, i-line, individual intensity of 1:1:ι, and using a number of apertures 0.08, an optical system with a homology of 0.8, exposed in the multi-step dimmer, and grasping the effective transmittance of the semi-transmissive region to the exposed light, and the resist on the processed layer corresponding to the semi-transmissive region The relationship between the residual film and the multi-step dimming cover that determines the allowable range of the effective transmittance of the multi-step dimming cover based on the above-described grasped relationship. The multi-step dimming cover of the present invention has a light-shielding film that shields light from exposure light and a semi-transmissive film that transmits a part of the exposure light on a transparent substrate, and is formed by pattern processing, respectively. a transfer pattern of a light-transmitting region, a light-shielding region, and a semi-transmissive region; when the above-mentioned 〇 multi-step dimming cover is used, each of the g-line, the h-line, and the i-line has an intensity of 1: 1: i; When an optical system having a number of apertures (ΝΑ) of 0.08 and a homology (σ) of 0.8 is used to expose the above-described multi-step dimmer, and the light is transmitted through the light to obtain the effective transmittance of the semi-transmissive region, The in-plane distribution range of the effective transmittance of the semi-transmissive region is adjusted to 2.0% or less of the above-mentioned management flaw, so that even in the case of having a narrow and wide pattern, the desired residual film can be stably obtained.阻's resist pattern. Further, the above-described effects of the present invention can be obtained even in a multi-step dimming cover of a fourth-order tone or more, or a multi-light transmissive region having a fine light-shielding pattern, which is a -12-200944957-order dimming cover. Further, in accordance with the present invention, a multi-step dimmer can be evaluated or a reference for a multi-step dimmer can be obtained. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Up to now, in the management of the multi-step dimmer, the transmittance of the semi-transmissive film constituting the semi-transmissive region is independent of the shape of the pattern, and is inherent to the film determined by the film and the length of the wave (for example, the g-line). Permission rate is stipulated. When the film material and the thickness of the semi-transmissive film are set according to the transmittance determined according to the above, the area of the semi-transmissive region is sufficiently large with respect to the resolution of the exposure machine, and when the wavelength of the exposure light is equal to the representative wavelength, There is no particular problem. However, when the area and the width of the semi-transmissive region become minute with respect to the resolution of the exposure machine, due to the influence of the light-shielding portion or the light-transmitting portion adjacent to the semi-transmissive region, it becomes semi-transparent during actual exposure. The case where the film inherently has different transmittances. This is related to the diffraction of the light source caused by the shape of the pattern and the optical conditions of the exposure machine. For example, in a multi-step dimming cover for a thin film transistor (TFT), a region corresponding to a channel portion is used as a semi-transmissive region, and a region corresponding to a source and a drain adjacent to each other can be held in a manner of holding it. The light shielding portion is formed. In this reticle, as the size (width) of the channel portion becomes smaller, the boundary with the adjacent opaque portion becomes blurred under actual exposure conditions, and the transmittance of the exposure light of the channel portion becomes higher than that of the semi-transmissive film. Lower. Here, the "transmission rate of a semi-transmissive film" means a film which is formed on a transmission substrate, and the amount of light transmitted through the region when irradiated with light of a representative wavelength in a sufficiently wide region is transmitted to the light-transmitting region-13-200944957 The ratio of the amount of transmitted light is determined by the composition of the film and the film thickness. Further, the "sufficiently wide area" means an area in which the transmittance does not substantially change even if the width of the area changes. In recent thin film transistors (TFTs), it is proposed to increase the width of the channel portion by comparison with the conventional one, thereby increasing the operating speed of the liquid crystal, or increasing the brightness of the liquid crystal by using the size of the channel portion as a small amount. And other technologies. Therefore, the pattern is made fine, and it is presumed that the accuracy of the resist pattern is further improved in order to achieve this. The present inventors considered that in this case φ, the area of the mask and the area of the width of the mask are small, and the transmittance of the semi-transmissive film is not considered, but if the transmittance including the difference in the shape of the pattern is not considered, When the pattern is transferred onto the transfer target, the desired resist pattern cannot be formed. In particular, in the above-described TFT manufacturing mask, the unit patterns of the same shape in which the channel portions are formed are arranged, and it is impossible to prevent slight variations in the pattern size. When such a change overlaps with the change in the film permeability, even if the two are within a number of specifications, the residual film of the resist pattern obtained by the mask may fluctuate beyond the prediction. © Of course, it is also possible to make the distribution of the transfer result smaller by making the distribution range of the line width and the film transmittance smaller. However, in this method, the technical difficulty is high, and there is an unfavorable situation in which the quality is excessive and the yield of the product is lowered. On the other hand, it is considered that the action of the line width variation of the pattern cancels the variation of the film transmittance. As a result, the change in the effective transmittance will become smaller. As a result, it is most reasonable to manage the quality of the reticle in accordance with the effective transmittance of the amount of light transmitted through the reticle during actual exposure. The present inventors have found that the image obtained by actually irradiating the irradiation light to the mask-14-200944957 by the photographing means under the condition that the exposure conditions of the exposure machine are made is taken, thereby obtaining The transfer pattern image containing the factors of the difference in pattern shape and the like, the film material and the thickness of the semi-transmissive film in the semi-transmissive region can be determined based on the transfer pattern image. Thereafter, based on this finding, the inventors have found that by managing the effective transmittance of the semi-transmissive region, the residual film of the resist film of the semi-transmissive region can be made to be desired. This is particularly effective in the case of a pattern having a narrow width. Here, in the present invention, the effective transmittance is used instead of the conventional method of using the film transmittance as a management method. The "effective permeable rate" is the size of the pattern or the linear width (CD: critical dimension) and optical conditions (source wavelength, aperture, (7 値, etc.)). The transmittance reflects the transmittance of the actual exposure environment. However, the exposure conditions of the exposure machine actually used in the use of the mask are not necessarily exactly the same. Therefore, the effective transmittance is grasped according to the exposure conditions of each exposure machine. On the other hand, in the reticle for manufacturing a liquid crystal device, the exposure light on the reticle is transferred to the object to be transferred by using the exposure light having a wide wavelength range of i-line 4 lines. Therefore, the exposure light of the i line (365 nm), the h line (405 nm), and the g line (436) can be included in the substantial φ at a intensity of 1:1:1 as the exposure for grasping the effective transmittance. Light is used as a standard. In addition, the optical system of the exposure machine can be used as an optical system with a numerical aperture (NA) of 0.08 and a homology (σ) of 0.8. That is, under such optical conditions, as long as it is semi-transparent. Effective transmittance of the light region If the inner distribution is 2.0%, such a mask can be used, and a resist pattern having a desired residual film of the resist can be easily obtained using an actual exposure machine. The present inventors, as shown in Fig. 1, are adjacent The channel area of the transistor of the semi-transmissive region held by the light-shielding region formed by the light-shielding film -15-200944957 (Wide D: Here, although D = 5 ym is used, even if a different width D is used The result is also unchanged. Investigation: The relationship between the effective transmittance Τα when changing the transmittance of the semi-transmissive film 22 and the residual film 时 when the resist pattern is formed by the multi-step dimming cover. The light system uses an exposure light having an i-line (365 nm), an h-line (405 nm), and a g-line (436 nm) at a strength of 1: 1: 1. In the optical system, the number of apertures (ΝΑ) is 0.08. An optical system having a homology (σ) of 0.8. The result is shown in Fig. 2(a). Here, when the second graph (a) is used, the residual film 可 can be obtained by the approximate zero equation of the linear relationship described above. The variation of the effective transmittance (ie, the in-plane distribution range of the mask) relative to the real mask That is, the effective transmittance Τα(%) of the real mask is taken as the X-axis, and when the residual film 値(A) is taken as the y-axis, it is found that the relationship between the two can be obtained by y = -366.825x + 21039.970 The linear approximation (determined by the actual measurement obtained by actual measurement). Therefore, the amount of fluctuation of the residual film y(y) can be expressed by the slope of the above linear approximation. For example, the residual film corresponding to ΔΤα = 1% The amount of change is about 36.6 nm (absolute 斜率 of the slope). Therefore, the amount of change (range) (%) of the effective transmittance Τα and the amount of change (range) of the residual film 可 can be obtained by the second (b) The line shown in the figure indicates. In other words, the range (variation amount) of the residual film 结果 as a result of the transfer of the management range (variation amount) of Τα can be expressed by a tilt angle of about 3 66 如 as shown in Fig. 2(b). As can be seen from Fig. 2(b), as long as the distribution of Τα (i.e., the amount of variation) is 2% or less, the distribution of residual ruthenium is reduced to 80 nm, and it is known that fine remnant residual film management becomes possible. The present inventors focused on the range (variation) of such effective transmittance, which is a range (variation amount) directly controlling the residual film enthalpy of the actually formed resist pattern. Then, the inventors discovered by using this relationship that the management of the residual film is carried out by the management of the effective rate of the trans--16-200944957, and even in the case of a narrow-width pattern, it is usually stably obtained. The residual film is a resistant pattern, and the present invention is conceived. For example, as described above, the relationship between the effective transmittance of the semi-transmissive region and the residual film 阻 of the resist film on the corresponding layer to be processed is obtained, whereby the amount of change with respect to the effective transmittance can be obtained. The residual film of the membrane changes. By the above relationship, it is also possible to evaluate the quality of the mask by making the residual film of the resist pattern available on the layer to be processed. Further, in consideration of the reticle user who wants to incorporate the residual film φ into the predetermined range of φ, the quality of the reticle can be evaluated by referring to the correlation of the above variations. Alternatively, based on the above relationship, the allowable range reference of the effective transmittance of the semi-transmissive region can be determined. For example, even when the allowable fluctuation range of the semi-transmissive region of the photomask is 2% or more, the evaluation can be made with sufficient quality by the electronic device to be used. Here, the "effective transmittance of the semi-transmissive region" refers to a film transmission φ ratio which is not dependent only on the semi-transmissive film when the predetermined exposure light is irradiated, and is designed by the pattern design of the mask or the like. The actual transmittance produced in the semi-transmissive region. Further, as the effective transmittance, the transmittance of the portion having the largest enthalpy among the light intensity distributions transmitted through the semi-transmissive region can be obtained. For example, when the mask is used to form a resist pattern of a positive resist on the transfer target, the transmittance is related to the minimum flaw of the residual film remaining in the semi-transmissive region. . Here, the "in-plane in-plane distribution range" means a range in which the entire surface of the transfer pattern region of the photomask is distributed. Regarding such range management, for example, it is particularly effective when the width of the channel region of the thin film transistor is 5/zm or less. -17- 200944957 As the apparatus for measuring the effective transmittance as described above, for example, the apparatus shown in Fig. 3 can be cited. This device is mainly composed of a light source 1, an illumination optical system 2 that irradiates light from the light source 1 to the reticle 3, and a lens lens system 4 that images light transmitted through the reticle 3, which is obtained by the objective lens system 4. It is constituted by an imaging means 5 for photographing. The light source 1 is a person who emits a light beam of a predetermined wavelength. For example, a funnel lamp, a metal halide lamp, a UHP lamp (ultra-high pressure mercury lamp), or the like can be used, and an optical filter can be used as the light source 1 as appropriate.照射 The illumination optical system 2 guides light from the light source 1 and irradiates the light to the reticle 3. The illumination optical system 2 is provided with a first aperture mechanism (first aperture stop 7 A) in order to set the number aperture (NA) to a desired aperture. The illumination optical system 2 preferably includes a first field stop 6A for adjusting the irradiation range of the light of the mask 3. The light that has passed through the illumination optical system 2 is irradiated onto the mask 3 held by the mask holder 3a. This illumination optical system 2 is disposed in the first housing 13A. The mask 3 is held by the mask holder 3a. The mask holder 3a ® supports the lower end portion and the side edge portion of the mask 3 in a substantially straight state. The mask 3 is held obliquely and held. The reticle holder 3a, as the reticle 3, is a reticle 3 of various sizes which can be kept large (for example, a main plane of 1 220 mm x 140 mm and a thickness of 13 mm). Further, the term "substantially straight" is indicated by 0 in Fig. 3, and the angle from the vertical is about 10 degrees. The light irradiated on the reticle 3 passes through the reticle 3 and is incident on the objective lens unit 4. The objective lens system 4 is a first group (simulated transmissive * 18 - 200944957 mirror) 4a in which parallel light is incident on the light beam by injecting light passing through the mask 3, for example, and is passed through A group 2 (imaging lens) 4b of a group of beam imaging is formed. The analog lens 4a includes a second aperture mechanism (second aperture stop 7B), and the numerical aperture (NA) is variable. The second aperture stop 7B is provided with a second field diaphragm 6B. The light beam passing through the objective lens system 4 is received by the imaging means 5. This object lens system 4 is disposed in the second housing 13B. This imaging means 5 captures an image of the reticle 3. As the image pickup means 5, an image pickup element such as a CCD can be used. In this apparatus, since the number of apertures of the illumination optical system 2 and the number of pupil apertures of the lens φ lens system 4 are respectively variable, the number of apertures of the illumination optical system 2 can be relatively small with respect to the number of the lens system 4 The ratio of the aperture of 値, ie sigma値 (σ: homology), is made variable. The optical conditions at the time of exposure can be reproduced or approximated by appropriately selecting the above conditions. Further, in the apparatus, an arithmetic means (i.e., computer) 11 is provided, and image processing, calculation, comparison with a predetermined threshold, display, and the like of the captured image obtained by the imaging means 5 are provided; and the control means 14 has The display means 12; and the movement operation means 15 change the position of the first casing 13''. φ Therefore, by using the obtained captured image or the light intensity distribution obtained therefrom, a predetermined calculation is performed by the control means 14 to obtain a captured image or light intensity distribution and transmission under the condition of using other exposure light. rate. In the optical system used in grasping the effective transmittance of the semi-transmissive portion in the present invention, an optical system having a number of apertures of 〇.〇8 and a homology of 0.8 is used. As the exposure light, exposure light having an intensity of individual light of the g line, the h line, and the i line is set to 1: 1:1. As a parameter of the optical system, although there are some changes depending on the exposure machine, the above number is a standard number, and it is necessary to confirm the nature of the mask before the photomask is mounted on each exposure machine. . Further, although the wavelength distribution of the illumination light varies slightly depending on the exposure machine or the time in the range of 1 line to 2 lines, the wavelengths of the i lines, the h lines, and the g lines are made 1:1:1. For the intensity distribution, the evaluation of the mask can be used as the most standard. In other words, under these conditions, as long as the management mask is satisfied, the performance under practical exposure conditions can be estimated from a sufficient angle. A multi-step dimming cover according to the present invention includes: a light-shielding film that shields light from exposure light provided on a transparent substrate; and a semi-transmissive film that partially passes the exposure light to form a light-transmitting region and a light-shielding region And a transfer pattern of the semi-transmissive region. As a transparent substrate, a glass substrate etc. are mentioned. Further, examples of the light-shielding film that shields the exposure light include a metal film such as a chromium film, a tantalum film, a metal oxide film, and a metal halide film such as a molybdenum telluride film. Further, the light shielding film preferably has an antireflection film on the surface. Examples of the material of the antireflection film include an oxide of chromium, a nitride, a carbide, a fluoride, and the like. As the semi-transmissive film that transmits a part of the above-mentioned exposure light, an oxygen cerium oxide, a nitride, a carbide, an oxynitride, a oxynitride carbide, or a metal ruthenium compound can be used. In particular, as the semi-permeable membrane, a chromium oxide film, a chromium nitride film, a metal halide film such as a molybdenum molybdenum film, or an oxide, a nitride, an oxynitride, a carbide or the like is preferable. The above-described multi-step dimming cover may be of any of the following two types of configurations. In the first structure, as shown in FIG. 4(a), the semi-transmissive film 22 is formed on the light-shielding region A and the semi-transmissive region B of the transparent substrate 21, and the light-shielding film 23 is formed on the light-shielding region A of the semi-transmissive film 22. Made of structure. In the second structure, as shown in FIG. 4(b), a light-shielding film 23 and a semi-transmissive film 22 of -20-200944957 are formed on the light-shielding region A of the transparent substrate 21, and a semi-transmissive film 22 is formed on the transparent substrate 21B. Made of structure. Or, a semi-transmissive area with different transmittances is used to create a 4th-order tone mask. In the first structure shown in FIG. 4(a), for example, a photomask blank in which a semi-transmissive film and a light-shielding layer are laminated on the transparent substrate 21 is prepared, and corresponds to a light-shielding region. A and the region φ of the semi-transmissive region B. The resist pattern is used as a mask, the exposed light-shielding film is used 23 times, and the resist pattern or the light-shielding film 23 is used as a mask, and the film 22 is etched to form a light-transmitting region. . Next, a resist pattern is formed in the region of the region A, and this resist pattern is formed as a light shielding film 23 for etching. In the second structure shown in FIG. 4(b), for example, a region corresponding to the light-shielding region A is formed on the mask blank on which the light-shielding film 23 is formed on the transparent substrate 21, and this resist pattern is used as the resist pattern. In the mask, the exposed light-shielding film is removed 23 times, and after the resist pattern is removed, the film on the transparent substrate 21 passes through the film 22. Thereafter, a resist pattern is formed in a region corresponding to the semi-transmissive region B and the light-shielding region A), which is a mask, and the exposed semi-permeable film 22 is inscribed. In the manufacture of the multi-step dimmer of the present invention, the J method can be employed. That is, the distribution of the semi-transmissivity can be made small by the control of the film formation conditions of the semi-transmissive film, the control, the development, and the control of the etching step. However, in the present invention, the semi-transmissive region can be produced by forming a multi-order alignment method of the above. The film, in this order, has a resist pattern on the mask blank. Etching is performed. The exposed semi-transmission is less covered with a light-shielding area and is exposed. The mask blank is in the resist pattern. Etching is performed. It is formed into a semi-transparent B (or semi-transmissive region). The resist pattern is made as the following side and the area of the transfer pattern is effective. As long as the distribution of the effective transmittance of the semi-transparent-21 - 200944957 region is controllable When it is carried out in a range of less than 2.0%, it is not necessary to set the distribution of the specific transmittance of the film to 2.0% or less. However, even if the distribution of the film transmittance is 2.0% or less using the representative wavelength, it is not necessarily The effect of the present invention can be obtained. When manufacturing a photomask of the present invention which is sufficient for the management of the present invention, the accuracy of the film transmittance of the semi-transmissive film or the accuracy of formation of the transfer pattern is not considered individually, but is considered to be effective. The transmittance accuracy can be managed. For example, when the film transmittance of the semi-transmissive film is limited, and the film thickness distribution is generated, the line width of the transfer pattern can be manipulated to cancel the film thickness distribution. Specifically, in the region where the film thickness is likely to become small, the width of the channel portion formed in this region can be made small in a region where the film thickness tends to become small. In the present invention, by using the above method or a known method, the device having the image shown in Fig. 3 can be used to grasp the effective transmittance range, and the effect of achieving the present invention can be recognized. The entire transfer pattern of the cover can sufficiently achieve the effect of the present invention as long as the in-plane distribution range (variation φ amount) of the effective transmittance of the semi-transmissive region is 2.0% or less. Moreover, in the case where the range exceeds 2.0% It is also possible to use the reticle of the invention by the correction of the reticle pattern, the correction of the film thickness, the change of the film quality, etc. In the correction of the reticle pattern, a well-known correction method (using CVD) can be suitably used. And a laser method, a FIB (Focused Ion Beam) method, etc., when the film transmittance is changed by the correction of the film thickness or the improvement of the film quality, the chemical liquid or the energy irradiation can be imparted. Surface treatment of the film surface" In the pattern transfer using such a multi-step dimmer, a light-shielding film which is provided on a transparent substrate to shield the exposure light, and the above-mentioned exposure -22-200944957 light ray is used. a part of the transmissive semi-transmissive film is patterned to form a multi-step dimming cover having a transfer pattern of a light-transmitting region, a light-shielding region, and a semi-transmissive region, by irradiating the exposure light of the exposure machine The transfer pattern is transferred to the layer to be processed. In particular, it is preferred to perform patterning of the thin film transistor by the pattern transfer method. As described above, the multi-step dimming mask according to the present invention, that is, semi-transparent When the effective transmittance of the region is in the range of 2% or less, the residual film of the resist pattern can be obtained according to the relationship between the range of the effective transmittance and the range of the residual film of the resist pattern. The 値 is managed within a predetermined range, whereby even in the case of a pattern having a narrow width, the resist pattern of the desired residual film enthalpy can be generally stably obtained. Further, a majority of the half having different effective transmittances are used. In the reticle of the light-transmitting region, in the reticle in which the retardation film on the transfer target is provided with a plurality of steps, it is of course possible to use the above-mentioned management 値 for the semi-transparent region having the individual effective transmittance. Assessment. The present invention is not limited to the above-described embodiments, and can be appropriately changed and implemented as φ. For example, in the above embodiment, the range of the effective transmittance is 2% or less. However, the technical idea of the present invention is proportional to the range of the effective transmittance and the range of the residual film. According to this relationship, since the effective transmittance can be used as the management index, the range of the residual film 阻 of the resist pattern can be more accurately managed. Therefore, the range of the residual film 要求 of the desired resist pattern can be appropriately changed. The range of effective transmission rates. In addition, the number, the size, the processing procedure, and the like of the above-described embodiments are merely examples, and various modifications can be made without departing from the scope of the invention. Others may be modified as appropriate without departing from the scope of the invention -23-200944957. For example, in the multi-step dimming cover of the fourth-order or higher, there are cases where the first and second semi-transmissive regions having different effective transmittances are included. The invention is also applicable to such multi-step dimmers. In this case, in the first and second semi-transmissive regions, the effect of the present invention can be obtained by managing the in-plane distribution of the effective transmittance to 2% or less. Further, instead of having a semi-transmissive film, a semi-transmissive region may be formed by a fine light-shielding pattern having a resolution limit or smaller of the exposure machine. © [Simplified description of the drawings] Fig. 1 is a view showing a passage area of a transistor of a semi-transmissive region held adjacent to a light-shielding region. Fig. 2(a) is a graph showing the relationship between the effective transmittance and the residual film enthalpy, and Fig. 2(b) is a graph showing the relationship between the range of the effective transmittance and the range of the residual film enthalpy. Fig. 3 is a view showing an example of an apparatus for reproducing the exposure conditions of the exposure machine. Stomach Figs. 4(a) and 4(b) show the structure of the multi-step dimming hood according to the embodiment of the present invention. Fig. 5(a) and Fig. 5(b) are views showing the patterns of the light shielding film and the semi-transmissive film and the light intensity distribution corresponding thereto. [Main component symbol description] 1 Light source 2 Irradiation optical system 3 Photomask -24- 200944957
3a 光 罩 保 持 具 4 接 物 透 鏡 系 4 a 第 1 群 (模擬透 4b 第 2 群 (成像透 5 攝 像 手 段 6A 第 1 視 BH2 野 光 圈 6B 第 2 視 野 光 圈 7A 第 1 開 □ 光 圈 7B 第 2 開 P 光 圈 11 運 算 手 段 12 顯 示 手 段 1 3A 第 1 筐 體 1 3B 第 2 筐 體 π,π. 14 控 制 手 段 15 移 動 操 作 手 段 21 透 明 基 板 22 半 透 過 膜 23 遮 光 膜 B 半 透 光 域 A 遮 光 1$ 域 -25-3a Photoreceptor holder 4 Lens lens system 4 a Group 1 (analog transmissive 4b Group 2 (imaging 5 imaging means 6A 1st view BH2 field 6B 2nd view aperture 7A 1st open aperture 7B 2nd open P Aperture 11 Calculation means 12 Display means 1 3A 1st housing 1 3B 2nd housing π, π. 14 Control means 15 Moving operation means 21 Transparent substrate 22 Semi-transmissive film 23 Light-shielding film B Semi-transmissive field A Shading 1$ Domain-25-