TWI491058B - 影像拾取面板及影像拾取處理系統 - Google Patents

影像拾取面板及影像拾取處理系統 Download PDF

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Publication number
TWI491058B
TWI491058B TW101146436A TW101146436A TWI491058B TW I491058 B TWI491058 B TW I491058B TW 101146436 A TW101146436 A TW 101146436A TW 101146436 A TW101146436 A TW 101146436A TW I491058 B TWI491058 B TW I491058B
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TW
Taiwan
Prior art keywords
image pickup
light
sections
photodetection
wiring layer
Prior art date
Application number
TW101146436A
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English (en)
Chinese (zh)
Other versions
TW201330303A (zh
Inventor
大鳥居英
代田典久
富樫治夫
Original Assignee
新力股份有限公司
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Publication of TW201330303A publication Critical patent/TW201330303A/zh
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Publication of TWI491058B publication Critical patent/TWI491058B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/2019—Shielding against direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW101146436A 2011-12-15 2012-12-10 影像拾取面板及影像拾取處理系統 TWI491058B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011274780A JP5895504B2 (ja) 2011-12-15 2011-12-15 撮像パネルおよび撮像処理システム

Publications (2)

Publication Number Publication Date
TW201330303A TW201330303A (zh) 2013-07-16
TWI491058B true TWI491058B (zh) 2015-07-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101146436A TWI491058B (zh) 2011-12-15 2012-12-10 影像拾取面板及影像拾取處理系統

Country Status (6)

Country Link
US (3) US9164182B2 (OSRAM)
JP (1) JP5895504B2 (OSRAM)
KR (1) KR102090343B1 (OSRAM)
CN (1) CN103988306B (OSRAM)
TW (1) TWI491058B (OSRAM)
WO (1) WO2013089209A2 (OSRAM)

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WO2016132764A1 (ja) * 2015-02-19 2016-08-25 ソニー株式会社 放射線検出器、放射線検出器の製造方法および撮像装置
JP2017009725A (ja) * 2015-06-19 2017-01-12 ソニー株式会社 表示装置
WO2017041221A1 (en) * 2015-09-08 2017-03-16 Shenzhen Xpectvision Technology Co., Ltd. Methods for making an x-ray detector
US11018180B2 (en) 2015-10-09 2021-05-25 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor x-ray detectors
US10192646B2 (en) * 2016-04-25 2019-01-29 General Electric Company Radiation shielding system
CN109416406B (zh) * 2016-07-05 2023-06-20 深圳帧观德芯科技有限公司 具有不同热膨胀系数的接合材料
TWI613804B (zh) * 2017-09-04 2018-02-01 友達光電股份有限公司 光感測裝置
DE102018200845B4 (de) * 2018-01-19 2021-05-06 Siemens Healthcare Gmbh Montageverfahren für die Herstellung eines Röntgendetektors, Röntgendetektor und Röntgengerät
JP2019191018A (ja) * 2018-04-26 2019-10-31 ソニー株式会社 測距装置及び測距モジュール
CN111134705B (zh) * 2020-01-21 2023-10-13 上海奕瑞光电子科技股份有限公司 一种放射线图像探测器及其制作方法
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Also Published As

Publication number Publication date
US9651683B2 (en) 2017-05-16
CN103988306A (zh) 2014-08-13
CN103988306B (zh) 2017-03-08
US9164182B2 (en) 2015-10-20
US20140326892A1 (en) 2014-11-06
US20170219722A1 (en) 2017-08-03
KR102090343B1 (ko) 2020-03-17
WO2013089209A2 (en) 2013-06-20
US20160033655A1 (en) 2016-02-04
JP5895504B2 (ja) 2016-03-30
US10663604B2 (en) 2020-05-26
JP2013124976A (ja) 2013-06-24
WO2013089209A3 (en) 2013-08-15
TW201330303A (zh) 2013-07-16
KR20140113638A (ko) 2014-09-24

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