IT1402806B1 - Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni. - Google Patents

Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni.

Info

Publication number
IT1402806B1
IT1402806B1 ITTO2010A000947A ITTO20100947A IT1402806B1 IT 1402806 B1 IT1402806 B1 IT 1402806B1 IT TO2010A000947 A ITTO2010A000947 A IT TO2010A000947A IT TO20100947 A ITTO20100947 A IT TO20100947A IT 1402806 B1 IT1402806 B1 IT 1402806B1
Authority
IT
Italy
Prior art keywords
photomoltiplicator
incapsulated
tomography
machines
performance
Prior art date
Application number
ITTO2010A000947A
Other languages
English (en)
Inventor
Mark Andrew Shaw
Federico Giovanni Ziglioli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITTO2010A000947A priority Critical patent/IT1402806B1/it
Priority to US13/303,731 priority patent/US9188683B2/en
Publication of ITTO20100947A1 publication Critical patent/ITTO20100947A1/it
Application granted granted Critical
Publication of IT1402806B1 publication Critical patent/IT1402806B1/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)
ITTO2010A000947A 2010-11-29 2010-11-29 Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni. IT1402806B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2010A000947A IT1402806B1 (it) 2010-11-29 2010-11-29 Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni.
US13/303,731 US9188683B2 (en) 2010-11-29 2011-11-23 Encapsulated photomultiplier device of semiconductor material, for use, for example, in machines for performing positron-emission tomography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000947A IT1402806B1 (it) 2010-11-29 2010-11-29 Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni.

Publications (2)

Publication Number Publication Date
ITTO20100947A1 ITTO20100947A1 (it) 2012-05-30
IT1402806B1 true IT1402806B1 (it) 2013-09-18

Family

ID=43743110

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000947A IT1402806B1 (it) 2010-11-29 2010-11-29 Dispositivo fotomoltiplicatore incapsulato di materiale semiconduttore, in particolare per l'utilizzo in macchine per l'esecuzione della tomografia ad emissione di positroni.

Country Status (2)

Country Link
US (1) US9188683B2 (it)
IT (1) IT1402806B1 (it)

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JP5895504B2 (ja) * 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP5925711B2 (ja) * 2013-02-20 2016-05-25 浜松ホトニクス株式会社 検出器、ｐｅｔ装置及びｘ線ｃｔ装置
JP6002062B2 (ja) * 2013-02-28 2016-10-05 浜松ホトニクス株式会社 半導体光検出装置
US9153550B2 (en) * 2013-11-14 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design with balanced metal and solder resist density
DE102015101705B4 (de) 2015-02-06 2023-04-27 Endress+Hauser SE+Co. KG Messanordnung zur radiometrischen Dichte- oder Füllstandsmessung eines Mediums in einem explosionsgefährdeten Bereich
US10254421B2 (en) 2015-04-14 2019-04-09 Analogic Corporation Detector array for radiation system
JP2017009725A (ja) * 2015-06-19 2017-01-12 ソニー株式会社 表示装置
WO2017014798A1 (en) * 2015-07-17 2017-01-26 Analogic Corporation Detector unit for detector array of radiation imaging modality
CN108027448B (zh) * 2015-10-09 2022-02-11 深圳帧观德芯科技有限公司 半导体x射线检测器的封装方法
EP3462494B1 (en) * 2017-09-29 2021-03-24 Detection Technology OY Integrated radiation detector device
US11740367B2 (en) 2022-01-07 2023-08-29 Analogic Corporation Radiation detectors for scanning systems, and related scanning systems

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JP2967653B2 (ja) * 1992-07-31 1999-10-25 信越化学工業株式会社 放射線検出器の製造方法
US6831263B2 (en) * 2002-06-04 2004-12-14 Intel Corporation Very high speed photodetector system using a PIN photodiode array for position sensing
JP2004137351A (ja) * 2002-10-17 2004-05-13 Sony Corp 複合材料、人工発光皮膚および人工発光ボディー
KR100665365B1 (ko) * 2006-01-05 2007-01-09 삼성전기주식회사 발광다이오드 패키지 제조 방법
KR101283182B1 (ko) * 2006-01-26 2013-07-05 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조 방법
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
SG148054A1 (en) * 2007-05-17 2008-12-31 Micron Technology Inc Semiconductor packages and method for fabricating semiconductor packages with discrete components
GB2451447B (en) * 2007-07-30 2012-01-11 Sensl Technologies Ltd Light sensor
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JP2009117536A (ja) * 2007-11-05 2009-05-28 Towa Corp 樹脂封止発光体及びその製造方法
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
JP5616368B2 (ja) * 2009-03-06 2014-10-29 コーニンクレッカ フィリップス エヌ ヴェ 放射線検出器モジュール、当該モジュールを有するイメージング装置、放射線検出器アレイのドリフト補償方法、当該方法を実行するためのコンピュータ可読媒体
KR20100108109A (ko) * 2009-03-27 2010-10-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US8431951B2 (en) * 2009-10-01 2013-04-30 Excelitas Canada, Inc. Optoelectronic devices with laminate leadless carrier packaging in side-looker or top-looker device orientation

Also Published As

Publication number Publication date
US9188683B2 (en) 2015-11-17
US20120132817A1 (en) 2012-05-31
ITTO20100947A1 (it) 2012-05-30

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