TWI451525B - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
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- TWI451525B TWI451525B TW100122507A TW100122507A TWI451525B TW I451525 B TWI451525 B TW I451525B TW 100122507 A TW100122507 A TW 100122507A TW 100122507 A TW100122507 A TW 100122507A TW I451525 B TWI451525 B TW I451525B
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- 239000000758 substrate Substances 0.000 title claims description 227
- 230000002093 peripheral effect Effects 0.000 claims description 207
- 230000001105 regulatory effect Effects 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 16
- 238000007599 discharging Methods 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 3
- 239000003507 refrigerant Substances 0.000 description 53
- 238000001816 cooling Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
Description
本發明係有關於一種例如於半導體製程等之微細加工領域中使用之基板處理裝置。
先前,於真空中之半導體製程等之基板(晶圓)處理中,為了提高處理均一性,而進行用以使基板表面溫度均一化之溫度調節。作為基板溫度調節方法,一般採用如下方法,於載置基板之基板載置台(stage)之內部設置冷媒流路,使冷媒流入該流路,由來自基板載置台之放射熱,冷卻載置於基板載置台上之基板表面,從而進行溫度調節。
例如,於專利文獻1中,揭示有一種電漿處理裝置,於該電漿處理裝置中,於基板載置台之內部設置2個同心圓狀之冷媒流路,使流入外側流路之冷媒與流入內側流路之冷媒之溫度成為相對不同之溫度,並藉由使對接受來自腔室內壁之放射熱之基板周緣部之冷卻相較對基板中央部之冷卻為強冷卻,而使基板之表面溫度均一化。
專利文獻1:日本專利特開平9-17770號公報
然而,於上述專利文獻1記載之電漿處理裝置中,流入溫度相互不同之冷媒之2個系統之冷媒流路係於1個基板載置台之內部鄰接,導致該2個系統之冷媒流路溫度相互影響,因此,存在無法獨立控制基板之中央部與周緣部分別之冷卻之虞。即,無法分別對載置於基板載置台上之基板之中央部及周緣部進行精密之溫度管理、溫度控制,從而難以使受到來自腔室內壁之放射熱較大影響之基板周緣部之表面溫度、與受此影響較小之基板中央部之表面溫度均一化。因此,由於基板處理中之基板表面整面之條件未能均一化,故而,存在無法均一地進行基板處理之問題。進而,於電漿處理裝置內,因基板載置台為一體構成,亦將成為導致2個系統之冷媒流路之溫度相互影響,從而無法獨立控制中央部及周緣部之基板溫度之原因。再者,由於獨立設置2個系統之冷媒流路,故而需要用以對各個冷媒流路之入口與出口供給或排出冷媒之配管,因此,裝置整體之配管數量增加或配管構成之複雜化亦成為問題。
此外,例如於上述專利文獻1記載之電漿處理裝置中,一般而言,基板係以靜電吸盤等之方式載置於基板載置台上,故而,基板載置台之溫度變化容易直接影響基板表面之溫度變化,使得基板表面之溫度管理、溫度控制相對容易。然而,於以基板與基板載置台之間形成有間隙之狀態下載置基板之方式之基板處理裝置中,藉由來自基板載置台之放射熱,對基板表面進行溫度管理、溫度控制,該情形時,基板載置台之溫度變化並不直接影響至基板表面之溫度變化,故而,必需對基板載置台進行更精密之溫度管理、溫度控制。
因而,鑒於上述問題等,本發明之目的在於提供一種可以彼此互不影響之方式,獨立且精密地進行基板之周緣部與中心部之溫度管理、溫度控制,且使配管構成簡化之基板處理裝置。
為了達成上述目的,根據本發明,提供一種基板處理裝置,其係於真空處理空間中處理基板者,且包含載置至少2片以上之基板之基板載置台,上述基板載置台係包含數量與載置之基板數量對應之基板載置部,且於上述基板載置部,相互獨立地形成有對載置之基板之中央部進行調溫之中央調溫流路、及對基板周緣部進行調溫之周緣調溫流路,於上述基板載置台上設置有1個使調溫介質導入至上述周緣調溫流路之調溫介質導入口,且設置有數量與載置之基板數量對應之使調溫介質自上述周緣調溫流路中排出之調溫介質排出口。再者,此處,所謂調溫係表示溫度控制、溫度調節。
於上述基板處理裝置中,上述周緣調溫流路包含:周緣內側流路,其係一端部連接於上述調溫介質導入口,且沿著基板之周緣部延伸;周緣外側流路,其係一端部連接於上述調溫介質排出口,且沿著基板之周緣部延伸;以及連接流路,其連接上述周緣內側流路之另一端部與上述周緣外側流路之另一端部;且,上述連接流路與上述調溫介質排出口係分別隔著上述調溫介質導入口,鄰接地配置於該調溫介質導入口。
亦可使上述中央調溫流路與上述周緣調溫流路分別連接於不同之調溫介質供給源。亦可於上述中央調溫流路及上述周緣調溫流路之內部上表面,設置自該上表面突出之散熱片。亦可於上述調溫介質排出口分別設置有流量控制機構。上述流量控制機構可分別進行獨立控制。
又,於上述基板處理裝置中,上述基板載置部係包含或置基板之周緣部進行溫度控制之周緣載置部件、載置基板之中央部進行溫度控制之中央載置部件、及支撐上述周緣載置部件及上述中央載置部件之支撐台,且,於上述周緣載置部件之內部,形成有上述周緣調溫流路,於上述中央載置部件之內部形成有上述中央調溫流路,於上述周緣載置部件與上述中央載置部件之間形成有間隙,且上述周緣載置部件與上述中央載置部件為非接觸。
上述周緣載置部件係包含2個以上作為環狀之周緣部、與使該周緣部彼此結合之周緣結合部,上述中央載置部件係包含形狀與上述周緣部之內周對應之2個以上之中央部、與使該中央部彼此結合之中央結合部,於上述周緣部與上述中央部之間,沿水平方向形成有環狀間隙,於上述周緣結合部與上述中央結合部之間,沿鉛垂方向形成有間隙,且上述周緣結合部及上述中央結合部可分別結合於上述支撐台。又,亦可於上述周緣部之外緣部,設置有進行基板位置對準之聚焦環。
根據本發明,提供一種可以互不影響之方式,獨立且精密地對基板之周緣部與中心部進行溫度管理、溫度控制,且使配管構成簡化之基板處理裝置。
以下,參照圖式,說明本發明之實施形態。再者,於本說明書及圖式中,對於實質上具有相同之功能構成之構成要素,藉由標註相同符號來省略重複說明。又,於以下之本發明實施形態中,以同時配置、處理2片基板W之基板處理裝置1為一實施形態例,進行說明。
圖1係本發明實施形態之基板處理裝置1之概略剖面圖。如圖1所示,基板處理裝置1係包含處理腔室10、與配置於處理腔室10內進行基板W之處理時載置基板W之基板載置台20。再者,於圖1中圖示有2片基板W載置於基板載置台20之上表面之情形。又,於處理腔室10中,設置有連通至處理氣體供給機構22之例如噴頭形狀之處理氣體導入部23、與連通至真空泵25之排氣口26。藉此,處理腔室10內便可進行真空抽吸,又,於基板W處理時,自處理氣體導入部23將處理氣體導入至處理腔室10內。
又,於處理腔室10中,設置有多根支撐銷28,該等支撐銷28係藉由貫通基板載置台20,且突出至該基板載置台20之上方來支撐基板W,進行基板W對基板載置台20之載置。支撐銷28係藉由結合於支撐銷28使支撐銷28沿鉛垂方向(圖1中之上下方向)升降之升降機構29而構成為升降自如。再者,如圖1所示,升降機構29係包含設置於處理腔室10外部之作為例如氣缸等之驅動部29a、與連接於驅動部29a且自驅動部29a伸長至處理腔室10內之升降部29b。支撐銷28係安裝於升降部29b,且支撐銷28亦與藉由驅動部29a之運轉而升降之升降部29b聯動地進行升降。當將基板W載置於基板載置台20之上表面時,使支撐銷28以特定之長度突出至基板載置台20之上方,且於使基板W載置於該突出之支撐銷28之上端之狀態下,以支撐銷28之前端靠近基板載置台20之上表面附近之方式使支撐銷28下降,藉此,將基板W載置於基板載置台20上。
又,於基板載置台20之上表面設置有微小之突起部30,如上所述,於基板W在由支撐銷28支撐之狀態下,下降至基板載置台20之上表面附近之情形時,基板W以藉由基板載置台20上表面之突起部30而懸浮於基板載置台20上表面上之狀態(與基板載置台20大致不接觸之狀態)載置。再者,於本實施形態之基板處理裝置1中,相對於1片基板W設置有3根支撐銷28,又,突起部30亦相對於1片基板W設置於3個部位,藉由3根支撐銷28以3點支撐基板W而支撐、升降基板W,並利用設置於基板載置台20之上表面之3個部位(相對於1片基板)的突起部30,使基板W以大致不接觸之狀態載置於基板載置台20上。此處,使基板W以大致不接觸之狀態載置於基板載置台20之上表面之原因在於,若將基板W直接載置於基板載置台20上,則有於基板載置台20表面之微粒等雜質會附著於基板W表面之虞。
為了更詳細地說明基板載置台20之構成,以下參照圖2描述該構成。圖2係關於基板載置台20之說明圖。此處,為了進行說明,而於圖2(a)中表示以下說明之各部件(周緣載置部件40、中央載置部件50、支撐台55)未經連結狀態下之基板載置台20之正面立體圖,且於圖2(b)中表示使各部件連結狀態下之基板載置台20之正面立體圖。又,圖2中並未圖示貫通基板載置台20而設置之支撐銷28、或以下說明之各調溫流路等。再者,基板載置台20係於在上述圖1所示之基板處理裝置1中配置於處理腔室10內之情形時,以圖2(b)所示之各部件經連結之狀態配置。
如圖2所示,基板載置台20係包含載置基板周緣部W1之周緣載置部件40、載置基板中央部W2之中央載置部件50、及支撐周緣載置部件40及中央載置部件50之支撐台55。再者,本實施形態係由周緣載置部件40與中央載置部件50構成基板載置部。周緣載置部件40係包含2個大致圓環形狀之周緣部41、以及使2個周緣部41以水平並排配置之狀態結合之周緣結合部43。又,中央載置部件50係包含2個大致圓板形狀之中央部51、以及使2個中央部51以水平並排配置之狀態結合之中央結合部53。此處,周緣部41之內周形狀與中央部51之形狀之關係係對應關係。即,如圖2(b)所示,於使周緣載置部件40與中央載置部件50疊合之情形時,構成為中央部51收納於大致圓環形狀之周緣部41之中心部之空間41a。因此,空間41a之平面(上表面)形狀與中央部51之平面(上表面)形狀為大致相同形狀,且,中央部51之上表面面積變得小於空間41a之上表面面積。又,周緣部41之上表面面積與中央部51之上表面面積成為大致相等之面積。
如上所述,由於周緣部41之形狀與中央部51之形狀之關係為對應關係,故而,如圖2(b)所示,於使周緣載置部件40與中央載置部件50疊合時,於周緣部41與中央部51之間,沿水平方向形成有環狀之間隙56。又,構成基板載置台20時之各部件(周緣載置部件40、中央載置部件50、支撐台55)之結合係藉由未圖示之螺釘部件而進行,中央結合部53與支撐台55亦藉由未圖示之螺釘部件而結合。此處,於周緣結合部43與中央結合部53之間,以沿鉛垂方向形成間隙59之方式進行各部件之結合,其結果,周緣載置部件40與中央載置部件50以互不接觸之狀態構成基板載置台20。
又,如圖2(a)所示,於周緣結合部43之下表面中央,在一個部位設置有用以將例如冷卻水等之冷媒作為調溫介質導入設置於周緣載置部件40內(周緣部41內)之周緣調溫流路60內之調溫介質導入口61,進而,用以將冷媒自周緣調溫流路60內排出之調溫介質排出口63鄰接地設置於調溫介質導入口61之兩側(圖2中近前側與裏側)之兩個部位。此處,周緣載置部件40係包含分別載置2片基板之2個周緣部41與周緣結合部43,且於2個周緣部41內分別形成有周緣調溫流路60,但形成於2個周緣部41內之周緣調溫流路60於設置於上述1處之調溫介質導入口61中連通。參照圖3,隨後描述該周緣調溫流路60之構成、形狀。
另一方面,於中央結合部53之靠近中央部51之兩端部(圖2中為左右方向之端部)附近,用以將冷媒導入至設置於中央載置部件50內(中央部51內)之中央調溫流路65內之導入口67、與用以使冷媒自中央調溫流路65排出之排出口69分別設置於各端部之一個部位。再者,參照圖4,隨後描述中央調溫流路65之構成、形狀。
又,於中央結合部53中央,如圖2(b)所示,當使周緣載置部件40與中央載置部件50疊合,構成基板載置台20時,於與設置於周緣結合部43之調溫介質導入口61及調溫介質排出口63疊合之位置上,設置有3個部位之孔部57(圖2(a)中由裏向外設為57a、57b、57c)。
繼而,如圖2(a)所示,於支撐台55上,將使周緣載置部件40與中央載置部件50疊合而構成基板載置台20時,分別連接於調溫介質導入口61、調溫介質排出口63、導入口67、排出口69之配管設置於與各導入口、排出口對應之位置上。再者,對於設置於支撐台55上之配管,於圖2(a)中分別圖示為對與調溫介質導入口61對應之配管標註符號61',對與調溫介質排出口63對應之配管標註符號63',對與導入口67對應之配管標註符號67',對與排出口69對應之配管標註符號69'。再者,調溫介質導入口61與配管61'之連接、及調溫介質排出口63與配管63'之連接係於上述孔部57(57a、57b、57c)中進行。因此,配管61'、63'係以與孔部57之高度(即,中央結合部53之厚度)同等程度之高度於支撐台55上表面,相較其他部分高出一階地突出設置。
如上所述,於2個周緣部41之內部,分別形成有周緣調溫流路60。圖3係周緣載置部件40之概略性平面剖面圖。再者,於圖3中,為了進行說明而利用虛線圖示周緣載置部件40。如圖3所示,周緣調溫流路60係構成為與設置於周緣結合部43上之調溫介質導入口61及調溫介質排出口63連接,且自調溫介質導入口61導入之作為例如冷卻水等之冷媒流經周緣調溫流路60而自調溫介質排出口63排出。又,周緣調溫流路60係包含沿著周緣部41之外側(沿著基板W之周緣部)延伸之周緣外側流路60a、沿著周緣部41之內側延伸之周緣內側流路60b、及連接周緣外側流路60a之一端部與周緣內側流路60b之一端部之連接流路60c。周緣外側流路60a之另一端部(未與連接流路60c連接之端部)係連接於調溫介質排出口63,且周緣內側流路60b之另一端部(未與連接流路60c連接之端部)連接於調溫介質導入口61。此處,周緣外側流路60a及周緣內側流路60b以分別圍繞周緣載置部件40大致一周之方式延伸,且連接流路60c與調溫介質排出口63構成為隔著調溫介質導入口61而與該調溫介質導入口61鄰接之位置關係。
又,於本實施形態中,周緣載置部件40係包含2個周緣部41、及使2個周緣部41結合之周緣結合部43。如圖3所示,於2個周緣部41中,分別形成有周緣調溫流路60,但該2個周緣調溫流路60連接於共通之1個調溫介質導入口61。即,構成如下,將冷媒自共通之調溫介質導入口61導入至2個周緣調溫流路60,且使穿過各周緣調溫流路60之冷媒分別自其它調溫介質排出口63排出。再者,於調溫介質排出口63,分別設置有例如包含閥與控制部之流量控制機構70,且利用流量控制機構70控制周緣調溫流路60內流動之冷媒之流量。分別設置於2個調溫介質排出口63之流量控制機構70為相互獨立控制。即,獨立地控制2個周緣調溫流路60內流動之冷媒之流量。
另一方面,於2個中央部51之內部,分別形成有中央調溫流路65。圖4係中央載置部件50之概略性平面剖面圖。再者,於圖4中,為了進行說明,而利用虛線圖示中央載置部件50。如圖4所示,中央調溫流路65係構成為與設置於中央結合部53之導入口67及排出口69連接,且使自導入口67導入之冷媒穿過中央調溫流路65,自排出口69排出。中央調溫流路65只要形成為遍及中央部51之整個表面之形狀即可,較佳為,例如於圖4所示之中央部51之內側與外側之兩側,蜿蜒地形成有大致圓環狀之流路之形狀。又,與上述調溫介質排出口63同樣地,於排出口69,分別設置有例如包含閥與控制部之流量控制機構70,且藉由流量控制機構70控制中央調溫流路65內流動之冷媒之流量。分別設置於2個排出口69之流量控制機構70為相互獨立控制,藉此,獨立地控制於2個中央調溫流路65內流動之冷媒之流量。
又,如圖1所示,周緣調溫流路60經由導入管83、排出管84連通至處理腔室10外部之調溫介質供給源80。藉由調溫介質供給源80之運行,而經由導入管83將冷媒自調溫介質導入口61供給至周緣調溫流路60內。又,穿過周緣調溫流路60之冷媒係經由排出管84自調溫介質排出口63向調溫介質供給源80排出。即,冷媒係於調溫介質供給源80與周緣調溫流路60之間進行循環。
又,如圖1所示,中央調溫流路65係經由導入管93、排出管94連通至處理腔室10外部之調溫介質供給源90。藉由調溫介質供給源90之運行,經由導入管93將冷媒自導入口67供給至中央調溫流路65內。又,穿過中央調溫流路65之冷媒係經由排出管94自排出口69向調溫介質供給源90排出。即,冷媒係於調溫介質供給源90與中央調溫流路65之間進行循環。再者,上述調溫介質供給源80與調溫介質供給源90係不同之調溫介質供給源,於調溫介質供給源80與調溫介質供給源90中循環之冷媒之溫度不同,且冷媒之溫度調節係於各調溫介質供給源中獨立地進行。
於以如上說明之方式構成之基板處理裝置1中進行基板處理之情形時,載置於基板載置台20上之基板W係由來自藉由形成於周緣載置部件40內及中央載置部件50內之調溫流路(周緣調溫流路60、中央調溫流路65)而調溫之基板載置台20之放射熱進行溫度調節。此時,利用設置於周緣載置部件40內部之周緣調溫流路60之冷卻能力,對基板周緣部W1進行調溫,並利用設置於中央載置部件50內部之中央調溫流路65之冷卻能力,將基板中央部W2冷卻,以此方式,基板周緣部W1與基板中央部W2分別藉由不同之調溫流路之冷卻能力來進行冷卻。
於基板處理中,在基板W上存在有來自比基板W更高溫度之處理腔室10之內壁之放射熱引起之供熱,尤其,基板周緣部W1與處理腔室10之內壁之距離短於基板中央部W2與處理腔室10之內壁之距離,因此,基板周緣部W1中供熱多於基板中央部W2。於基板處理中,處理中之基板W之表面溫度必需均一,因此,基板周緣部W1相較基板中央部W2,必需進行強冷卻(調溫)。如上所述,於本實施形態之基板處理裝置1中,基板載置台20係包含周緣載置部件40與中央載置部件50,且於周緣載置部件40與中央載置部件50之間分別形成有水平方向之間隙56與鉛垂方向之間隙59,故而周緣載置部件40與中央載置部件50相互為非接觸。此處,基板處理中之處理腔室10內為經真空抽吸之狀態,故而,上述間隙56、間隙59因真空隔熱,而使周緣載置部件40與中央載置部件50之溫度成為互不影響之狀態。因此,可以分別獨立地將周緣載置部件40與中央載置部件50控制為特定之溫度,從而相較基板中央部W2,可對基板周緣部W1進行強冷卻(調溫)。
即,藉由對設置於周緣載置部件40內之周緣調溫流路60之冷媒溫度或冷媒流量、與設置於中央載置部件50內之中央調溫流路65之冷媒溫度或冷媒流量相互獨立地進行溫度管理、流量控制,而使經周緣調溫流路60冷卻(調溫)之基板周緣部W1、與經中央調溫流路65冷卻(調溫)之基板中央部W2之溫度管理、溫度控制獨立且精密地進行。因此,可精密地使基板處理時之基板W之整體表面溫度均一化。例如,於因來自處理腔室10內壁之放射熱而使基板周緣部W1相較基板中央部W2成為高溫之情形時,將周緣調溫流路60之冷媒溫度調節為比中央調溫流路65之冷媒溫度低之溫度,且以周緣調溫流路60之冷媒流量變得大於中央調溫流路65之冷媒流量之方式,進行冷媒之流量控制,藉此,便可相較基板中央部W2,對基板周緣部W1進行例如強冷卻(調溫),從而使基板W整體之表面溫度均一。
再者,利用本實施形態之基板處理裝置1進行之基板處理並無特別限定,但可例示例如使用作為處理氣體之HF氣體、NH3
氣體,對形成於基板W表面之SiO2
膜進行處理,經過其後之加熱處理,並將SiO2
膜自基板W上去除之基板進行清洗處理等。
又,於在本實施形態所示之基板載置台20上載置2片基板,且同時對2片基板W進行基板處理之情形時,由於構成為自1個共通之調溫介質導入口61,將來自調溫介質供給源80之冷媒導入至2個周緣調溫流路60,且構成為利用將冷媒自各周緣調溫流路60排出之調溫介質排出口63進行調溫介質流量控制,故而,與2個周緣調溫流路中分別設置調溫介質導入口與調溫介質排出口之情形相比,可簡化用以導入冷媒之配管構成,實現空間效率之提昇與成本降低等。
以上,說明了本發明之實施形態之一例,但本發明並不限定於圖示之形態。作為本領域技術人員,當知於請求項記載之思想範疇內,可設想各種變更例或者修正例,且應理解該等變更例或者修正例,勿庸置疑屬於本發明之技術範圍。例如,於上述實施形態中,分別將周緣調溫流路60之形狀及中央調溫流路65之形狀圖示於圖3、圖4中,但周緣調溫流路60及中央調溫流路65之形狀並不限定於此,周緣調溫流路60只要形成為可以均一地對周緣部41之整面進行調溫之形狀即可,而且,中央調溫流路65只要形成為可以均一地對中央部51之整面進行調溫之形狀即可。
又,於上述實施形態中,作為流入周緣調溫流路60及中央調溫流路65之調溫介質,列舉說明了作為冷卻水等之冷媒,但本發明並不限定於此。例如,為了進行基板W之精密溫度控制,有時亦將與基板W之表面溫度大致同等之溫度之流體,作為調溫介質,使之流入至周緣調溫流路60及中央調溫流路65,進行基板W之溫度控制。該情形時,經加熱之特定溫度之調溫介質將流入至周緣調溫流路60及中央調溫流路65。
又,於上述實施形態中,關於周緣調溫流路60及中央調溫流路65之流路剖面形狀並無特別限定,但為了使冷媒之溫度有效地傳遞至周緣載置部件40及中央載置部件50,較佳為,使各流路(周緣調溫流路60、中央調溫流路65)之流路剖面形狀,形成為大於流路內表面與冷媒之接觸面積之形狀。
圖5係表示周緣調溫流路60之流路剖面形狀之一例之說明圖。如圖5所示,於本變形例之周緣調溫流路60中,於流路上表面形成有自沿著鉛垂方向延伸之該上表面突出之散熱片100。散熱片100之長度、寬度只要不阻礙冷媒於流路內流動即可,較佳為,根據流入周緣調溫流路60內之冷媒流量,合理地設定上述長度、寬度。又,設置於流路上表面之散熱片100之數量或散熱片100彼此之間隔亦可根據冷媒流量合理地設定。
如圖5所示,當於周緣調溫流路60之流路上表面設置散熱片100時,流路內部之面積相較普通之矩形剖面之流路擴大。因此,流路內流動之冷媒與流路內表面之接觸面積亦變大,從而更有效地進行冷媒與流路內表面之熱交換。即,流入周緣調溫流路60內之冷媒對周緣部41(周緣載置部件40)之冷卻(調溫)更有效地進行,其結果,使載置於周緣載置部件40之基板W之冷卻效率提昇。
又,於上述實施形態之基板處理裝置1中,亦可於周緣部41之外緣部設置進行基板W位置對準之聚焦環(focus ring)。圖6係於上述實施形態之基板處理裝置1中,在2個各周緣部41之外緣部設置聚焦環110之情形之說明圖。聚焦環110係沿著周緣部41之外緣部(外周附近)設置之圓環形狀之環,且其高度與基板W之厚度大致相同。
如上述實施形態所說明,於周緣載置部件40(周緣部41)中,基板W係由3處突起部30點支撐地載置。基板W之載置係於周緣部41上表面之特定位置上進行,但存在因某些外因(例如裝置之振動等)而使載置之基板W偏離周緣部41上表面之特定位置之虞。因而,如圖6所示,可藉由於周緣部41之外緣部設置聚焦環110,而避免載置於周緣部41上表面之特定位置上之基板W之位置偏離,使其對準特定之位置。又,亦於將基板W載置在周緣載置部件40時,可使基板W對準特定之位置。
進而,當進行基板處理時,將處理氣體導入至處理腔室10內,但可藉由設置聚焦環110,而實現處理氣體於基板W與周緣部41之間之間隙111中之流動穩定化,從而更有效地進行基板處理。
本發明係應用於例如半導體製程等微細加工領域中使用之基板載置台、基板處理裝置及基板處理系統。
1...基板處理裝置
10...處理腔室
20...基板載置台
22...處理氣體供給機構
23...處理氣體導入部
25...真空泵
26...排氣口
28...支撐銷
29...升降機構
30...突起部
40...周緣載置部件
41...周緣部
43...周緣結合部
50...中央載置部件
51...中央部
53...中央結合部
55...支撐台
56、59...間隙
57...孔部
60...周緣調溫流路
60a...周緣外側流路
60b...周緣內側流路
60c...連接流路
61...調溫介質導入口
63...調溫介質排出口
65...中央調溫流路
67...導入口
69...排出口
70...流量控制機構
80、90...調溫介質供給機構
83、93...導入管
84、94...排出管
100...散熱片
110...聚焦環
111...間隙
W...基板
W1...基板周緣部
W2...基板中央部
圖1係基板處理裝置之剖面概略圖;
圖2係關於基板載置台之說明圖,圖2(a)係各部件(周緣載置部件、中央載置部件、支撐台)未經連結狀態下之基板載置台之正面立體圖,圖2(b)係使各部件連結狀態下之基板載置台之正面立體圖;
圖3係周緣載置部件之概略平面剖面圖;
圖4係中央載置部件之概略平面剖面圖;
圖5係表示周緣調溫流路之流路剖面形狀之一例之說明圖;及
圖6係於基板處理裝置中將聚焦環設置於周緣部時之說明圖。
1...基板處理裝置
10...處理腔室
20...基板載置台
22...處理氣體供給機構
23...處理氣體導入部
25...真空泵
26...排氣口
28...支撐銷
29...升降機構
29a...驅動部
29b...升降部
30...突起部
40...周緣載置部件
50...中央載置部件
55...支撐台
56、59...間隙
60、62...周緣調溫流路
60a...周緣外側流路
60b...周緣內側流路
75...間隙
80、90...調溫介質供給機構
83、93...導入管
84、94...排出管
W...基板
W1...基板周緣部
W2...基板中央部
Claims (9)
- 一種基板處理裝置,其係於真空處理空間中處理基板者,且包含載置至少2片以上之基板之基板載置台,上述基板載置台係包含:數量與被載置之基板數量對應之基板載置部、以及將基板載置部予以結合的結合部,於上述基板載置部,相互獨立地形成有對經載置之基板之中央部進行調溫之中央調溫流路、及對基板之周緣部進行調溫之周緣調溫流路,於上述結合部,設置有1個使調溫介質導入至上述周緣調溫流路之調溫介質導入口,且設置有數量恰與被載置之基板數量對應之使調溫介質自上述周緣調溫流路中排出之調溫介質排出口,其中上述周緣調溫流路包含:周緣內側流路,其係一端部連接於上述調溫介質導入口,且沿著基板之周緣部延伸;周緣外側流路,其係一端部連接於上述調溫介質排出口,且沿著基板之周緣部延伸;以及連接流路,其係連接上述周緣內側流路之另一端部與上述周緣外側流路之另一端部;且上述連接流路與上述調溫介質排出口係分別配置為隔著上述調溫介質導入口而鄰接於該調溫介質導入口。
- 如請求項1之基板處理裝置,其中上述中央調溫流路與上述周緣調溫流路分別連接於不同之調溫介質供給源。
- 如請求項1之基板處理裝置,其中於上述中央調溫流路及上述周緣調溫流路之內部上表面,設置有自該上表面突出之散熱片。
- 如請求項1之基板處理裝置,其中於上述調溫介質排出口分別設置有流量控制機構。
- 如請求項4之基板處理裝置,其中上述流量控制機構係分別獨立控制。
- 如請求項1之基板處理裝置,其中上述基板載置部包含:周緣載置部件,其係載置基板之周緣部並進行溫度控制;及中央載置部件,其係載置基板之中央部並進行溫度控制;且上述基板載置台進一步包含支撐上述周緣載置部件與上述中央載置部件的支撐台;於上述周緣載置部件之內部形成有上述周緣調溫流路,於上述中央載置部件之內部形成有上述中央調溫流路,於上述周緣載置部件與上述中央載置部件之間形成有間隙,且上述周緣載置部件與上述中央載置部件為非接觸。
- 如請求項6之基板處理裝置,其中上述周緣載置部件係包含2個以上為環狀的周緣部,上述中央載置部件係包 含形狀與上述周緣部之內周對應之2個以上之中央部,上述結合部包含:使該周緣部彼此結合之周緣結合部、以及使該中央部彼此結合之中央結合部,且上述周緣部與上述中央部之間於水平方向形成有環狀之間隙,上述周緣結合部與上述中央結合部之間於鉛垂方向形成有間隙,且上述周緣結合部及上述中央結合部分別結合於上述支撐台。
- 如請求項1之基板處理裝置,其中於上述周緣部之外緣部設置有進行基板之位置對準之聚焦環。
- 如請求項7之基板處理裝置,其中上述調溫介質導入口及上述調溫介質排出口係設置於上述周緣結合部。
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Also Published As
Publication number | Publication date |
---|---|
DE102011108634B4 (de) | 2013-07-25 |
TW201205717A (en) | 2012-02-01 |
US8741065B2 (en) | 2014-06-03 |
KR101299891B1 (ko) | 2013-08-23 |
CN102315143A (zh) | 2012-01-11 |
CN102315143B (zh) | 2014-04-09 |
KR20120002460A (ko) | 2012-01-05 |
US20120000629A1 (en) | 2012-01-05 |
DE102011108634A1 (de) | 2012-02-02 |
JP5119297B2 (ja) | 2013-01-16 |
JP2012015286A (ja) | 2012-01-19 |
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