TWI443217B - 直流磁控管噴濺系統之設計及使用 - Google Patents

直流磁控管噴濺系統之設計及使用 Download PDF

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Publication number
TWI443217B
TWI443217B TW098113072A TW98113072A TWI443217B TW I443217 B TWI443217 B TW I443217B TW 098113072 A TW098113072 A TW 098113072A TW 98113072 A TW98113072 A TW 98113072A TW I443217 B TWI443217 B TW I443217B
Authority
TW
Taiwan
Prior art keywords
target
splatter
splash
enhanced
field
Prior art date
Application number
TW098113072A
Other languages
English (en)
Chinese (zh)
Other versions
TW200951237A (en
Inventor
伊爾Ｈ 李
金在衍
Original Assignee
哈尼威爾國際公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 哈尼威爾國際公司 filed Critical 哈尼威爾國際公司
Publication of TW200951237A publication Critical patent/TW200951237A/zh
Application granted granted Critical
Publication of TWI443217B publication Critical patent/TWI443217B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW098113072A 2008-04-21 2009-04-20 直流磁控管噴濺系統之設計及使用 TWI443217B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4672708P 2008-04-21 2008-04-21

Publications (2)

Publication Number Publication Date
TW200951237A TW200951237A (en) 2009-12-16
TWI443217B true TWI443217B (zh) 2014-07-01

Family

ID=41417324

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098113072A TWI443217B (zh) 2008-04-21 2009-04-20 直流磁控管噴濺系統之設計及使用

Country Status (5)

Country Link
US (1) US8398833B2 (https=)
JP (1) JP5676429B2 (https=)
KR (1) KR101337306B1 (https=)
TW (1) TWI443217B (https=)
WO (1) WO2009151767A2 (https=)

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KR102073414B1 (ko) * 2012-04-24 2020-02-04 어플라이드 머티어리얼스, 인코포레이티드 저 에칭 레이트 하드마스크 막을 위한 산소 도핑을 갖는 ｐｖｄ ａｌｎ 막
CN105008582A (zh) * 2013-01-04 2015-10-28 东曹Smd有限公司 具有增强的表面轮廓和改善的性能的硅溅射靶及其制造方法
KR20140129770A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
US20170186593A1 (en) * 2014-05-20 2017-06-29 Seagate Technology Llc Contoured target for sputtering
KR101827472B1 (ko) 2014-07-09 2018-02-08 가부시키가이샤 알박 절연물 타겟
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
US11244815B2 (en) * 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11542589B2 (en) * 2018-03-21 2023-01-03 Applied Materials, Inc. Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets
KR20220034894A (ko) 2019-07-19 2022-03-18 에바텍 아크티엔게젤샤프트 압전 코팅 및 증착 공정
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN113088910B (zh) * 2021-03-31 2023-07-14 西安石油大学 一种表面具有多孔结构的碲化铋柔性复合薄膜及其制备方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber

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Also Published As

Publication number Publication date
WO2009151767A2 (en) 2009-12-17
TW200951237A (en) 2009-12-16
KR20110017862A (ko) 2011-02-22
KR101337306B1 (ko) 2013-12-09
WO2009151767A3 (en) 2010-02-25
JP5676429B2 (ja) 2015-02-25
JP2011518258A (ja) 2011-06-23
US8398833B2 (en) 2013-03-19
US20110031109A1 (en) 2011-02-10

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