JP5676429B2 - Ｄｃマグネトロンスパッタリングシステムの設計および使用 - Google Patents

Ｄｃマグネトロンスパッタリングシステムの設計および使用 Download PDF

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Publication number
JP5676429B2
JP5676429B2 JP2011506357A JP2011506357A JP5676429B2 JP 5676429 B2 JP5676429 B2 JP 5676429B2 JP 2011506357 A JP2011506357 A JP 2011506357A JP 2011506357 A JP2011506357 A JP 2011506357A JP 5676429 B2 JP5676429 B2 JP 5676429B2
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JP
Japan
Prior art keywords
sputtering target
field
sputtering
target
enhanced
Prior art date
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Application number
JP2011506357A
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English (en)
Japanese (ja)
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JP2011518258A5 (https=
JP2011518258A (ja
Inventor
リー，イアル・エイチ
キム，ジョエン
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Honeywell International Inc
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Honeywell International Inc
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Publication of JP2011518258A5 publication Critical patent/JP2011518258A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2011506357A 2008-04-21 2009-04-14 Ｄｃマグネトロンスパッタリングシステムの設計および使用 Active JP5676429B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4672708P 2008-04-21 2008-04-21
US61/046,727 2008-04-21
PCT/US2009/040455 WO2009151767A2 (en) 2008-04-21 2009-04-14 Design and use of dc magnetron sputtering systems

Publications (3)

Publication Number Publication Date
JP2011518258A JP2011518258A (ja) 2011-06-23
JP2011518258A5 JP2011518258A5 (https=) 2012-06-07
JP5676429B2 true JP5676429B2 (ja) 2015-02-25

Family

ID=41417324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011506357A Active JP5676429B2 (ja) 2008-04-21 2009-04-14 Ｄｃマグネトロンスパッタリングシステムの設計および使用

Country Status (5)

Country Link
US (1) US8398833B2 (https=)
JP (1) JP5676429B2 (https=)
KR (1) KR101337306B1 (https=)
TW (1) TWI443217B (https=)
WO (1) WO2009151767A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426506B2 (en) 2019-07-19 2025-09-23 Evatec Ag Piezoelectric coating and deposition process

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US9127356B2 (en) * 2011-08-18 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sputtering target with reverse erosion profile surface and sputtering system and method using the same
KR102073414B1 (ko) * 2012-04-24 2020-02-04 어플라이드 머티어리얼스, 인코포레이티드 저 에칭 레이트 하드마스크 막을 위한 산소 도핑을 갖는 ｐｖｄ ａｌｎ 막
CN105008582A (zh) * 2013-01-04 2015-10-28 东曹Smd有限公司 具有增强的表面轮廓和改善的性能的硅溅射靶及其制造方法
KR20140129770A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
US20170186593A1 (en) * 2014-05-20 2017-06-29 Seagate Technology Llc Contoured target for sputtering
KR101827472B1 (ko) 2014-07-09 2018-02-08 가부시키가이샤 알박 절연물 타겟
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
US11244815B2 (en) * 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11542589B2 (en) * 2018-03-21 2023-01-03 Applied Materials, Inc. Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN113088910B (zh) * 2021-03-31 2023-07-14 西安石油大学 一种表面具有多孔结构的碲化铋柔性复合薄膜及其制备方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber

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JPH06140330A (ja) * 1992-10-05 1994-05-20 Nippon Steel Corp スパッタリング装置
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US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426506B2 (en) 2019-07-19 2025-09-23 Evatec Ag Piezoelectric coating and deposition process

Also Published As

Publication number Publication date
WO2009151767A2 (en) 2009-12-17
TWI443217B (zh) 2014-07-01
TW200951237A (en) 2009-12-16
KR20110017862A (ko) 2011-02-22
KR101337306B1 (ko) 2013-12-09
WO2009151767A3 (en) 2010-02-25
JP2011518258A (ja) 2011-06-23
US8398833B2 (en) 2013-03-19
US20110031109A1 (en) 2011-02-10

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