KR101337306B1 - 필드-강화 스퍼터링 타겟 및 그 생산 방법 - Google Patents

필드-강화 스퍼터링 타겟 및 그 생산 방법 Download PDF

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KR101337306B1
KR101337306B1 KR1020107026151A KR20107026151A KR101337306B1 KR 101337306 B1 KR101337306 B1 KR 101337306B1 KR 1020107026151 A KR1020107026151 A KR 1020107026151A KR 20107026151 A KR20107026151 A KR 20107026151A KR 101337306 B1 KR101337306 B1 KR 101337306B1
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field
sputtering target
sputtering
reinforced
target
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KR20110017862A (ko
Inventor
일 에이치. 이
재연 김
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허니웰 인터내셔널 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020107026151A 2008-04-21 2009-04-14 필드-강화 스퍼터링 타겟 및 그 생산 방법 Active KR101337306B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4672708P 2008-04-21 2008-04-21
US61/046,727 2008-04-21
PCT/US2009/040455 WO2009151767A2 (en) 2008-04-21 2009-04-14 Design and use of dc magnetron sputtering systems

Publications (2)

Publication Number Publication Date
KR20110017862A KR20110017862A (ko) 2011-02-22
KR101337306B1 true KR101337306B1 (ko) 2013-12-09

Family

ID=41417324

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107026151A Active KR101337306B1 (ko) 2008-04-21 2009-04-14 필드-강화 스퍼터링 타겟 및 그 생산 방법

Country Status (5)

Country Link
US (1) US8398833B2 (https=)
JP (1) JP5676429B2 (https=)
KR (1) KR101337306B1 (https=)
TW (1) TWI443217B (https=)
WO (1) WO2009151767A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9127356B2 (en) * 2011-08-18 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Sputtering target with reverse erosion profile surface and sputtering system and method using the same
KR102073414B1 (ko) * 2012-04-24 2020-02-04 어플라이드 머티어리얼스, 인코포레이티드 저 에칭 레이트 하드마스크 막을 위한 산소 도핑을 갖는 ｐｖｄ ａｌｎ 막
CN105008582A (zh) * 2013-01-04 2015-10-28 东曹Smd有限公司 具有增强的表面轮廓和改善的性能的硅溅射靶及其制造方法
KR20140129770A (ko) * 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
US20170186593A1 (en) * 2014-05-20 2017-06-29 Seagate Technology Llc Contoured target for sputtering
KR101827472B1 (ko) 2014-07-09 2018-02-08 가부시키가이샤 알박 절연물 타겟
JP6291122B1 (ja) 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
US11244815B2 (en) * 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11542589B2 (en) * 2018-03-21 2023-01-03 Applied Materials, Inc. Resistance-area (RA) control in layers deposited in physical vapor deposition chamber
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets
KR20220034894A (ko) 2019-07-19 2022-03-18 에바텍 아크티엔게젤샤프트 압전 코팅 및 증착 공정
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN113088910B (zh) * 2021-03-31 2023-07-14 西安石油大学 一种表面具有多孔结构的碲化铋柔性复合薄膜及其制备方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD1038901S1 (en) 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035439A (ko) * 1998-11-12 2000-06-26 조셉 제이. 스위니 구리 스퍼터링 타겟
US20020121436A1 (en) 2000-07-17 2002-09-05 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
JP2005126783A (ja) 2003-10-24 2005-05-19 Olympus Corp スパッタリングターゲット

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117276A (ja) * 1984-11-14 1986-06-04 Hitachi Ltd スパツタリング用タ−ゲツト
JPH06140330A (ja) * 1992-10-05 1994-05-20 Nippon Steel Corp スパッタリング装置
JPH11193457A (ja) 1997-12-26 1999-07-21 Japan Energy Corp 磁性体スパッタリングターゲット
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JP2001011617A (ja) 1999-07-01 2001-01-16 Nikko Materials Co Ltd スパッタリングターゲット
US6497797B1 (en) * 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
WO2002042518A1 (de) 2000-11-27 2002-05-30 Unaxis Trading Ag Target mit dickenprofilierung für rf manetron
WO2003000950A1 (en) * 2001-02-20 2003-01-03 Honeywell International Inc. Topologically tailored sputtering targets
US6872284B2 (en) * 2001-04-24 2005-03-29 Tosoh Smd, Inc. Target and method of optimizing target profile
JP2003027225A (ja) 2001-07-13 2003-01-29 Canon Inc スパッタリングターゲットおよびスパッタリング装置
EP1444276A1 (en) * 2001-11-06 2004-08-11 Dow Global Technologies, Inc. Isotactic propylene copolymers, their preparation and use
EP1466999B1 (en) * 2001-12-19 2014-10-08 JX Nippon Mining & Metals Corporation Method for connecting magnetic substance target to backing plate and magnetic substance target
US20030178301A1 (en) * 2001-12-21 2003-09-25 Lynn David Mark Planar magnetron targets having target material affixed to non-planar backing plates
US20040009087A1 (en) * 2002-07-10 2004-01-15 Wuwen Yi Physical vapor deposition targets, and methods of forming physical vapor deposition targets
US6955748B2 (en) * 2002-07-16 2005-10-18 Honeywell International Inc. PVD target constructions comprising projections
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP2004084007A (ja) 2002-08-27 2004-03-18 Nec Kyushu Ltd スパッタ装置
US6811657B2 (en) * 2003-01-27 2004-11-02 Micron Technology, Inc. Device for measuring the profile of a metal film sputter deposition target, and system and method employing same
US6702930B1 (en) * 2003-05-08 2004-03-09 Seagate Technology Llc Method and means for enhancing utilization of sputtering targets
EP2626444A3 (en) * 2003-12-25 2013-10-16 JX Nippon Mining & Metals Corporation Copper or copper alloy target/copper alloy backing plate assembly
EP1711646A4 (en) * 2004-02-03 2008-05-28 Honeywell Int Inc TARGET STRUCTURES FOR VAPOR PHYSICAL DEPOSITION
EP2236644A3 (en) * 2004-11-17 2012-01-04 JX Nippon Mining & Metals Corporation Sputtering target backing plate assembly and film deposition system
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
JP4879986B2 (ja) * 2006-06-29 2012-02-22 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット／バッキングプレート接合体
US20080173541A1 (en) * 2007-01-22 2008-07-24 Eal Lee Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling
JP4927102B2 (ja) * 2007-02-09 2012-05-09 Ｊｘ日鉱日石金属株式会社 高融点金属合金、高融点金属珪化物、高融点金属炭化物、高融点金属窒化物あるいは高融点金属ホウ化物の難焼結体からなるターゲット及びその製造方法並びに同スパッタリングターゲット−バッキングプレート組立体及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035439A (ko) * 1998-11-12 2000-06-26 조셉 제이. 스위니 구리 스퍼터링 타겟
US20020121436A1 (en) 2000-07-17 2002-09-05 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
JP2005126783A (ja) 2003-10-24 2005-05-19 Olympus Corp スパッタリングターゲット

Also Published As

Publication number Publication date
WO2009151767A2 (en) 2009-12-17
TWI443217B (zh) 2014-07-01
TW200951237A (en) 2009-12-16
KR20110017862A (ko) 2011-02-22
WO2009151767A3 (en) 2010-02-25
JP5676429B2 (ja) 2015-02-25
JP2011518258A (ja) 2011-06-23
US8398833B2 (en) 2013-03-19
US20110031109A1 (en) 2011-02-10

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