TWI414074B - 具有用於表面鈍化之結晶矽ｐ－ｎ同質接面及非晶矽異質接面的太陽能電池 - Google Patents
具有用於表面鈍化之結晶矽ｐ－ｎ同質接面及非晶矽異質接面的太陽能電池 Download PDFInfo
- Publication number
- TWI414074B TWI414074B TW097124397A TW97124397A TWI414074B TW I414074 B TWI414074 B TW I414074B TW 097124397 A TW097124397 A TW 097124397A TW 97124397 A TW97124397 A TW 97124397A TW I414074 B TWI414074 B TW I414074B
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- Prior art keywords
- layer
- germanium
- type
- region
- amorphous germanium
- Prior art date
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- 238000002161 passivation Methods 0.000 title description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 159
- 229910052732 germanium Inorganic materials 0.000 claims description 119
- 238000009792 diffusion process Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 2
- 150000002602 lanthanoids Chemical class 0.000 claims 2
- 239000011548 crystallization buffer Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 120
- 235000012431 wafers Nutrition 0.000 description 60
- 239000002019 doping agent Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 14
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000004050 hot filament vapor deposition Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum-germanium Chemical compound 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- DRVLHCMOXCBPHN-UHFFFAOYSA-N aluminum ruthenium Chemical compound [Al].[Ru] DRVLHCMOXCBPHN-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/036,766 US20090211627A1 (en) | 2008-02-25 | 2008-02-25 | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200937659A TW200937659A (en) | 2009-09-01 |
| TWI414074B true TWI414074B (zh) | 2013-11-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097124397A TWI414074B (zh) | 2008-02-25 | 2008-06-27 | 具有用於表面鈍化之結晶矽ｐ－ｎ同質接面及非晶矽異質接面的太陽能電池 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20090211627A1 (enExample) |
| EP (2) | EP2215665B1 (enExample) |
| JP (1) | JP5307818B2 (enExample) |
| CN (1) | CN102017188B (enExample) |
| BR (1) | BRPI0822313A2 (enExample) |
| CA (2) | CA2716402C (enExample) |
| MX (1) | MX2010009367A (enExample) |
| TW (1) | TWI414074B (enExample) |
| WO (1) | WO2009108162A1 (enExample) |
Families Citing this family (42)
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| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| WO2010118687A1 (zh) * | 2009-04-15 | 2010-10-21 | Zhu Huilong | 用于半导体器件制造的基板结构及其制造方法 |
| US8404970B2 (en) * | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
| EP2259329A1 (en) * | 2009-05-26 | 2010-12-08 | Institut de Ciències Fotòniques, Fundació Privada | Metal transparent conductors with low sheet resistance |
| KR101139443B1 (ko) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | 이종접합 태양전지와 그 제조방법 |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| KR101115195B1 (ko) * | 2009-10-30 | 2012-02-22 | 고려대학교 산학협력단 | 실리콘 이종접합 태양전지 및 이를 제조하는 방법 |
| JP5877333B2 (ja) * | 2010-03-31 | 2016-03-08 | パナソニックＩｐマネジメント株式会社 | 太陽電池の製造方法 |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| US20120146172A1 (en) | 2010-06-18 | 2012-06-14 | Sionyx, Inc. | High Speed Photosensitive Devices and Associated Methods |
| CN103283031B (zh) | 2010-09-22 | 2016-08-17 | 第一太阳能有限公司 | 包含n型掺杂剂源的光伏装置 |
| TW201314739A (zh) * | 2010-09-27 | 2013-04-01 | Astrowatt Inc | 包含半導體層及含金屬層之電子裝置及其形成方法 |
| US20120211079A1 (en) * | 2011-02-23 | 2012-08-23 | International Business Machines Corporation | Silicon photovoltaic element and fabrication method |
| TWI463682B (zh) * | 2011-03-02 | 2014-12-01 | Nat Univ Tsing Hua | 異質接面太陽能電池 |
| US8969711B1 (en) * | 2011-04-07 | 2015-03-03 | Magnolia Solar, Inc. | Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same |
| US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| CN102222703A (zh) * | 2011-06-21 | 2011-10-19 | 中国科学院上海技术物理研究所 | 带有本征层的异质结结构的晶体硅太阳电池及制备方法 |
| US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US20130298973A1 (en) * | 2012-05-14 | 2013-11-14 | Silevo, Inc. | Tunneling-junction solar cell with shallow counter doping layer in the substrate |
| US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法 |
| WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
| FR3007200B1 (fr) * | 2013-06-17 | 2015-07-10 | Commissariat Energie Atomique | Cellule solaire a heterojonction de silicium |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| FR3013149B1 (fr) * | 2013-11-12 | 2017-01-06 | Commissariat Energie Atomique | Cellule photovoltaique a hereojonction de silicium |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| US9929305B2 (en) * | 2015-04-28 | 2018-03-27 | International Business Machines Corporation | Surface treatment for photovoltaic device |
| KR101662526B1 (ko) * | 2015-08-26 | 2016-10-14 | 주식회사 테스 | 태양전지모듈 및 그 제조방법 |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| KR101821394B1 (ko) * | 2016-01-14 | 2018-01-23 | 엘지전자 주식회사 | 태양전지 |
| US10672919B2 (en) * | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| CN109755330B (zh) * | 2018-12-27 | 2020-11-24 | 中国科学院宁波材料技术与工程研究所 | 用于钝化接触结构的预扩散片及其制备方法和应用 |
| CN109950132A (zh) * | 2019-03-01 | 2019-06-28 | 晋能光伏技术有限责任公司 | 一种管式pecvd设备双面沉积太阳能电池非晶硅层的方法 |
| DE102019123785A1 (de) * | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
| CN111416014B (zh) * | 2020-05-08 | 2022-03-04 | 熵熠(上海)能源科技有限公司 | 一种钝化接触背结硅异质结太阳电池及其制备方法 |
| WO2025063987A2 (en) * | 2022-12-09 | 2025-03-27 | The University Of Tulsa | Improvements in silicon solar photovoltaic cell efficiency |
| CN118943225A (zh) * | 2023-05-10 | 2024-11-12 | 天合光能股份有限公司 | 杂化太阳能电池及光伏组件 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CA2906462A1 (en) | 2009-09-03 |
| JP2010538492A (ja) | 2010-12-09 |
| EP2215665A1 (en) | 2010-08-11 |
| BRPI0822313A2 (pt) | 2019-02-26 |
| EP2228834A3 (en) | 2011-06-15 |
| CN102017188A (zh) | 2011-04-13 |
| WO2009108162A1 (en) | 2009-09-03 |
| US20090211627A1 (en) | 2009-08-27 |
| EP2215665B1 (en) | 2014-01-15 |
| EP2228834B1 (en) | 2014-01-15 |
| JP5307818B2 (ja) | 2013-10-02 |
| CA2716402C (en) | 2015-12-08 |
| MX2010009367A (es) | 2011-03-04 |
| TW200937659A (en) | 2009-09-01 |
| EP2228834A2 (en) | 2010-09-15 |
| CN102017188B (zh) | 2015-07-22 |
| CA2716402A1 (en) | 2009-09-03 |
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