FR3013149B1 - Cellule photovoltaique a hereojonction de silicium - Google Patents
Cellule photovoltaique a hereojonction de siliciumInfo
- Publication number
- FR3013149B1 FR3013149B1 FR1361023A FR1361023A FR3013149B1 FR 3013149 B1 FR3013149 B1 FR 3013149B1 FR 1361023 A FR1361023 A FR 1361023A FR 1361023 A FR1361023 A FR 1361023A FR 3013149 B1 FR3013149 B1 FR 3013149B1
- Authority
- FR
- France
- Prior art keywords
- hereojunction
- silicon
- photovoltaic cell
- photovoltaic
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1361023A FR3013149B1 (fr) | 2013-11-12 | 2013-11-12 | Cellule photovoltaique a hereojonction de silicium |
PCT/EP2014/074325 WO2015071285A1 (fr) | 2013-11-12 | 2014-11-12 | Cellule photovoltaique a hereojonction de silicium |
CN201480061290.9A CN105706253A (zh) | 2013-11-12 | 2014-11-12 | 具有硅异质结的光伏电池 |
US15/032,902 US20160284915A1 (en) | 2013-11-12 | 2014-11-12 | Photovoltaic cell with silicon heterojunction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1361023A FR3013149B1 (fr) | 2013-11-12 | 2013-11-12 | Cellule photovoltaique a hereojonction de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3013149A1 FR3013149A1 (fr) | 2015-05-15 |
FR3013149B1 true FR3013149B1 (fr) | 2017-01-06 |
Family
ID=49817100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1361023A Expired - Fee Related FR3013149B1 (fr) | 2013-11-12 | 2013-11-12 | Cellule photovoltaique a hereojonction de silicium |
Country Status (4)
Country | Link |
---|---|
US (1) | US20160284915A1 (fr) |
CN (1) | CN105706253A (fr) |
FR (1) | FR3013149B1 (fr) |
WO (1) | WO2015071285A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102018381B1 (ko) * | 2017-01-26 | 2019-09-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR102570856B1 (ko) * | 2017-07-21 | 2023-08-25 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 페로브스카이트 태양전지 및 이를 포함하는 탬덤 태양전지 |
CN107819052A (zh) * | 2017-12-11 | 2018-03-20 | 晋能光伏技术有限责任公司 | 一种高效晶硅非晶硅异质结电池结构及其制备方法 |
CN108630763B (zh) * | 2018-06-12 | 2024-02-13 | 苏州阿特斯阳光电力科技有限公司 | 一种光电转换装置及其制备方法 |
CN108831967B (zh) * | 2018-06-25 | 2019-10-29 | 江苏悦阳光伏科技有限公司 | 一种新型hit太阳能电池及其制备方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN110828618A (zh) * | 2019-12-11 | 2020-02-21 | 浙江晶科能源有限公司 | 一种表面织构的太阳能电池的制作方法及太阳能电池 |
CN112466977B (zh) * | 2020-08-17 | 2022-07-15 | 隆基绿能科技股份有限公司 | 一种硅异质结电池及其制作方法 |
CN114628533B (zh) * | 2020-11-27 | 2024-02-13 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及其制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8039740B2 (en) * | 2007-06-20 | 2011-10-18 | Rosestreet Labs Energy, Inc. | Single P-N junction tandem photovoltaic device |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
JP2011243831A (ja) * | 2010-05-20 | 2011-12-01 | Panasonic Corp | 半導体レーザ装置 |
CN102110734B (zh) * | 2011-01-18 | 2012-07-18 | 西安交通大学 | 一种纳米硅/晶体硅异质结光伏电池 |
JP5919559B2 (ja) * | 2011-06-30 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
ITMI20111421A1 (it) * | 2011-07-28 | 2013-01-29 | Consiglio Nazionale Ricerche | Fabbricazione di fette di materiale semiconduttore a larga gap energetica per l?integrazione di dispositivi elettronici e/o ottici e/o optoelettronici |
US9099596B2 (en) * | 2011-07-29 | 2015-08-04 | International Business Machines Corporation | Heterojunction photovoltaic device and fabrication method |
CN103383975A (zh) * | 2013-06-20 | 2013-11-06 | 国电光伏有限公司 | 一种双面钝化高效异质结电池及其制作方法 |
-
2013
- 2013-11-12 FR FR1361023A patent/FR3013149B1/fr not_active Expired - Fee Related
-
2014
- 2014-11-12 US US15/032,902 patent/US20160284915A1/en not_active Abandoned
- 2014-11-12 CN CN201480061290.9A patent/CN105706253A/zh active Pending
- 2014-11-12 WO PCT/EP2014/074325 patent/WO2015071285A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN105706253A (zh) | 2016-06-22 |
US20160284915A1 (en) | 2016-09-29 |
FR3013149A1 (fr) | 2015-05-15 |
WO2015071285A1 (fr) | 2015-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK3017520T3 (da) | Solcelleanordning | |
DK2949038T3 (da) | Solcellemodul | |
FR3013149B1 (fr) | Cellule photovoltaique a hereojonction de silicium | |
DK3071223T3 (da) | Cell | |
DK3336866T3 (da) | Optoelektronisk anordning | |
BR302014001422S1 (pt) | Configuração aplicada a um dispositivo de comunicação | |
DE112013001544B8 (de) | Halbleitervorrichtung | |
DE112013002538T8 (de) | Halbleiterbauelement | |
DE112013002930A5 (de) | Optoelektronisches Halbleiterbauelement | |
DE112013004223A5 (de) | Optoelektronisches Halbleiterbauteil | |
SMT201500147B (it) | Cellule staminali stromalo | |
DE112012001867A5 (de) | Solarkonzentrator | |
DE112012003544A5 (de) | Solarkonzentrator | |
DK3234476T3 (da) | Solfanger | |
DE112012006068B8 (de) | Halbleitervorrichtung | |
DK2843320T3 (da) | Modulbærer | |
DE112012007149T8 (de) | Halbleitervorrichtung | |
DE112013005569A5 (de) | Optoelektronisches Halbleiterbauteil | |
DE112013000928A5 (de) | Optoelektronisches Halbleiterbauelement | |
EP2978001A4 (fr) | Élément de cellule solaire sensibilisée par colorant | |
JP2012186158A5 (ja) | 製造装置 | |
BR112014028581A2 (pt) | dispositivo de teto solar | |
FR3007200B1 (fr) | Cellule solaire a heterojonction de silicium | |
DE102011085502A8 (de) | Sonnenschutzvorrichtung | |
FR3007201B1 (fr) | Cellule solaire multi-jonctions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
ST | Notification of lapse |
Effective date: 20180731 |