JP5307818B2 - 結晶シリコンｐ−ｎホモ接合と表面安定化のためのアモルファスシリコンヘテロ接合とを有する太陽電池 - Google Patents

結晶シリコンｐ−ｎホモ接合と表面安定化のためのアモルファスシリコンヘテロ接合とを有する太陽電池 Download PDF

Info

Publication number
JP5307818B2
JP5307818B2 JP2010523988A JP2010523988A JP5307818B2 JP 5307818 B2 JP5307818 B2 JP 5307818B2 JP 2010523988 A JP2010523988 A JP 2010523988A JP 2010523988 A JP2010523988 A JP 2010523988A JP 5307818 B2 JP5307818 B2 JP 5307818B2
Authority
JP
Japan
Prior art keywords
layer
amorphous silicon
solar cell
type
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010523988A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010538492A (ja
JP2010538492A5 (enExample
Inventor
エル． メイヤー，ダニエル
ロハトギ，アジート
Original Assignee
サニーバ，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サニーバ，インコーポレイテッド filed Critical サニーバ，インコーポレイテッド
Publication of JP2010538492A publication Critical patent/JP2010538492A/ja
Publication of JP2010538492A5 publication Critical patent/JP2010538492A5/ja
Application granted granted Critical
Publication of JP5307818B2 publication Critical patent/JP5307818B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP2010523988A 2008-02-25 2008-06-11 結晶シリコンｐ−ｎホモ接合と表面安定化のためのアモルファスシリコンヘテロ接合とを有する太陽電池 Expired - Fee Related JP5307818B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/036,766 US20090211627A1 (en) 2008-02-25 2008-02-25 Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US12/036,766 2008-02-25
PCT/US2008/007356 WO2009108162A1 (en) 2008-02-25 2008-06-11 Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation

Publications (3)

Publication Number Publication Date
JP2010538492A JP2010538492A (ja) 2010-12-09
JP2010538492A5 JP2010538492A5 (enExample) 2011-05-26
JP5307818B2 true JP5307818B2 (ja) 2013-10-02

Family

ID=40380731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010523988A Expired - Fee Related JP5307818B2 (ja) 2008-02-25 2008-06-11 結晶シリコンｐ−ｎホモ接合と表面安定化のためのアモルファスシリコンヘテロ接合とを有する太陽電池

Country Status (9)

Country Link
US (1) US20090211627A1 (enExample)
EP (2) EP2215665B1 (enExample)
JP (1) JP5307818B2 (enExample)
CN (1) CN102017188B (enExample)
BR (1) BRPI0822313A2 (enExample)
CA (2) CA2716402C (enExample)
MX (1) MX2010009367A (enExample)
TW (1) TWI414074B (enExample)
WO (1) WO2009108162A1 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
WO2010118687A1 (zh) * 2009-04-15 2010-10-21 Zhu Huilong 用于半导体器件制造的基板结构及其制造方法
US8404970B2 (en) * 2009-05-01 2013-03-26 Silicor Materials Inc. Bifacial solar cells with back surface doping
EP2259329A1 (en) * 2009-05-26 2010-12-08 Institut de Ciències Fotòniques, Fundació Privada Metal transparent conductors with low sheet resistance
KR101139443B1 (ko) * 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
KR101115195B1 (ko) * 2009-10-30 2012-02-22 고려대학교 산학협력단 실리콘 이종접합 태양전지 및 이를 제조하는 방법
JP5877333B2 (ja) * 2010-03-31 2016-03-08 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
CN103283031B (zh) 2010-09-22 2016-08-17 第一太阳能有限公司 包含n型掺杂剂源的光伏装置
TW201314739A (zh) * 2010-09-27 2013-04-01 Astrowatt Inc 包含半導體層及含金屬層之電子裝置及其形成方法
US20120211079A1 (en) * 2011-02-23 2012-08-23 International Business Machines Corporation Silicon photovoltaic element and fabrication method
TWI463682B (zh) * 2011-03-02 2014-12-01 Nat Univ Tsing Hua 異質接面太陽能電池
US8969711B1 (en) * 2011-04-07 2015-03-03 Magnolia Solar, Inc. Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same
US20120312361A1 (en) * 2011-06-08 2012-12-13 International Business Machines Corporation Emitter structure and fabrication method for silicon heterojunction solar cell
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN102222703A (zh) * 2011-06-21 2011-10-19 中国科学院上海技术物理研究所 带有本征层的异质结结构的晶体硅太阳电池及制备方法
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20130298973A1 (en) * 2012-05-14 2013-11-14 Silevo, Inc. Tunneling-junction solar cell with shallow counter doping layer in the substrate
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
FR3007200B1 (fr) * 2013-06-17 2015-07-10 Commissariat Energie Atomique Cellule solaire a heterojonction de silicium
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
FR3013149B1 (fr) * 2013-11-12 2017-01-06 Commissariat Energie Atomique Cellule photovoltaique a hereojonction de silicium
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9929305B2 (en) * 2015-04-28 2018-03-27 International Business Machines Corporation Surface treatment for photovoltaic device
KR101662526B1 (ko) * 2015-08-26 2016-10-14 주식회사 테스 태양전지모듈 및 그 제조방법
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
KR101821394B1 (ko) * 2016-01-14 2018-01-23 엘지전자 주식회사 태양전지
US10672919B2 (en) * 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN109755330B (zh) * 2018-12-27 2020-11-24 中国科学院宁波材料技术与工程研究所 用于钝化接触结构的预扩散片及其制备方法和应用
CN109950132A (zh) * 2019-03-01 2019-06-28 晋能光伏技术有限责任公司 一种管式pecvd设备双面沉积太阳能电池非晶硅层的方法
DE102019123785A1 (de) * 2019-09-05 2021-03-11 Meyer Burger (Germany) Gmbh Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben
CN111416014B (zh) * 2020-05-08 2022-03-04 熵熠(上海)能源科技有限公司 一种钝化接触背结硅异质结太阳电池及其制备方法
WO2025063987A2 (en) * 2022-12-09 2025-03-27 The University Of Tulsa Improvements in silicon solar photovoltaic cell efficiency
CN118943225A (zh) * 2023-05-10 2024-11-12 天合光能股份有限公司 杂化太阳能电池及光伏组件

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019924A (en) * 1975-11-14 1977-04-26 Mobil Tyco Solar Energy Corporation Solar cell mounting and interconnecting assembly
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
JPS5696877A (en) * 1979-12-30 1981-08-05 Shunpei Yamazaki Photoelectric converter
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US5043772A (en) * 1985-05-07 1991-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photo-electrically-sensitive device
JPS59115574A (ja) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US4591892A (en) * 1982-08-24 1986-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
US6346716B1 (en) * 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4547622A (en) * 1984-04-27 1985-10-15 Massachusetts Institute Of Technology Solar cells and photodetectors
US4663495A (en) * 1985-06-04 1987-05-05 Atlantic Richfield Company Transparent photovoltaic module
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5213628A (en) * 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
DE4232843A1 (de) * 1992-09-30 1994-03-31 Siemens Ag Diffusionsgekühlter CO¶2¶-Bandleiterlaser mit reduzierter Zündspannung
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
JPH06188441A (ja) * 1992-12-16 1994-07-08 Sanyo Electric Co Ltd 光起電力素子
FR2711276B1 (fr) * 1993-10-11 1995-12-01 Neuchatel Universite Cellule photovoltaïque et procédé de fabrication d'une telle cellule.
JP3469729B2 (ja) * 1996-10-31 2003-11-25 三洋電機株式会社 太陽電池素子
US5972784A (en) * 1997-04-24 1999-10-26 Georgia Tech Research Corporation Arrangement, dopant source, and method for making solar cells
US6281426B1 (en) * 1997-10-01 2001-08-28 Midwest Research Institute Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
JP2000353706A (ja) * 1999-06-10 2000-12-19 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
US6706959B2 (en) * 2000-11-24 2004-03-16 Clean Venture 21 Corporation Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles
JP2002222973A (ja) * 2001-01-29 2002-08-09 Sharp Corp 光電変換素子およびその製造方法
JP4244549B2 (ja) * 2001-11-13 2009-03-25 トヨタ自動車株式会社 光電変換素子及びその製造方法
JP2003298078A (ja) * 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US6877294B2 (en) * 2002-11-04 2005-04-12 Kimberly-Clark Worldwide, Inc. Automatic repacking and accumulation system
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
JP4152197B2 (ja) * 2003-01-16 2008-09-17 三洋電機株式会社 光起電力装置
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
JP3893466B2 (ja) * 2003-08-22 2007-03-14 国立大学法人東北大学 光起電力素子、太陽電池、及び光起電力素子の製造方法
CN100431177C (zh) * 2003-09-24 2008-11-05 三洋电机株式会社 光生伏打元件及其制造方法
JP4319006B2 (ja) * 2003-10-23 2009-08-26 シャープ株式会社 太陽電池セルの製造方法
JP2005142268A (ja) * 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
JP2005175160A (ja) * 2003-12-10 2005-06-30 Sanyo Electric Co Ltd 光起電力装置
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
JP4229858B2 (ja) * 2004-03-16 2009-02-25 三洋電機株式会社 光電変換装置
US20050252544A1 (en) * 2004-05-11 2005-11-17 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP1643564B1 (en) * 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US20070023081A1 (en) * 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US20070023082A1 (en) * 2005-07-28 2007-02-01 Venkatesan Manivannan Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices
US20070107773A1 (en) * 2005-11-17 2007-05-17 Palo Alto Research Center Incorporated Bifacial cell with extruded gridline metallization
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US20070272297A1 (en) * 2006-05-24 2007-11-29 Sergei Krivoshlykov Disordered silicon nanocomposites for photovoltaics, solar cells and light emitting devices
WO2008057629A2 (en) * 2006-06-05 2008-05-15 The Board Of Trustees Of The University Of Illinois Photovoltaic and photosensing devices based on arrays of aligned nanostructures
US7915517B2 (en) * 2006-08-16 2011-03-29 Lau Po K Bifacial photovoltaic devices
EP1918966A1 (en) * 2006-11-02 2008-05-07 Dow Corning Corporation Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma
US20080223434A1 (en) * 2007-02-19 2008-09-18 Showa Denko K.K. Solar cell and process for producing the same

Also Published As

Publication number Publication date
CA2906462A1 (en) 2009-09-03
TWI414074B (zh) 2013-11-01
JP2010538492A (ja) 2010-12-09
EP2215665A1 (en) 2010-08-11
BRPI0822313A2 (pt) 2019-02-26
EP2228834A3 (en) 2011-06-15
CN102017188A (zh) 2011-04-13
WO2009108162A1 (en) 2009-09-03
US20090211627A1 (en) 2009-08-27
EP2215665B1 (en) 2014-01-15
EP2228834B1 (en) 2014-01-15
CA2716402C (en) 2015-12-08
MX2010009367A (es) 2011-03-04
TW200937659A (en) 2009-09-01
EP2228834A2 (en) 2010-09-15
CN102017188B (zh) 2015-07-22
CA2716402A1 (en) 2009-09-03

Similar Documents

Publication Publication Date Title
JP5307818B2 (ja) 結晶シリコンｐ−ｎホモ接合と表面安定化のためのアモルファスシリコンヘテロ接合とを有する太陽電池
US8945976B2 (en) Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
CN103430319B (zh) 太阳能电池元件及太阳能电池模块
US20090211623A1 (en) Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
CN103797583B (zh) 太阳能电池模块
JP2013239476A (ja) 光起電力装置およびその製造方法、光起電力モジュール
TW201236171A (en) Solar cell and solar-cell module
JP5744202B2 (ja) アルミナ膜の形成方法
CN111886706A (zh) 串联太阳能电池的制造方法
KR102674774B1 (ko) 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조 방법
JP6294694B2 (ja) 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP7346050B2 (ja) 太陽電池セルおよび太陽電池モジュール
CN110800114A (zh) 高效背面电极型太阳能电池及其制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110405

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120321

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120621

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120628

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120723

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130301

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130627

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees