TWI401741B - Plasma etching method - Google Patents
Plasma etching method Download PDFInfo
- Publication number
- TWI401741B TWI401741B TW96109942A TW96109942A TWI401741B TW I401741 B TWI401741 B TW I401741B TW 96109942 A TW96109942 A TW 96109942A TW 96109942 A TW96109942 A TW 96109942A TW I401741 B TWI401741 B TW I401741B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- etching
- film
- wafer
- tantalum
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 54
- 238000001020 plasma etching Methods 0.000 title claims description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims description 69
- 238000012545 processing Methods 0.000 claims description 51
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 38
- 229910052715 tantalum Inorganic materials 0.000 claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 139
- 238000005530 etching Methods 0.000 description 131
- 239000007789 gas Substances 0.000 description 116
- 239000000758 substrate Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 21
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 17
- 229910052707 ruthenium Inorganic materials 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 238000004380 ashing Methods 0.000 description 11
- 239000003245 coal Substances 0.000 description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052727 yttrium Inorganic materials 0.000 description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006080464A JP4877747B2 (ja) | 2006-03-23 | 2006-03-23 | プラズマエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200746293A TW200746293A (en) | 2007-12-16 |
| TWI401741B true TWI401741B (zh) | 2013-07-11 |
Family
ID=38632365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96109942A TWI401741B (zh) | 2006-03-23 | 2007-03-22 | Plasma etching method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4877747B2 (enrdf_load_stackoverflow) |
| CN (1) | CN100521105C (enrdf_load_stackoverflow) |
| TW (1) | TWI401741B (enrdf_load_stackoverflow) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5102653B2 (ja) * | 2008-02-29 | 2012-12-19 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
| JP5264231B2 (ja) * | 2008-03-21 | 2013-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5064319B2 (ja) * | 2008-07-04 | 2012-10-31 | 東京エレクトロン株式会社 | プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体 |
| JP5457021B2 (ja) * | 2008-12-22 | 2014-04-02 | 東京エレクトロン株式会社 | 混合ガスの供給方法及び混合ガスの供給装置 |
| US8435901B2 (en) * | 2010-06-11 | 2013-05-07 | Tokyo Electron Limited | Method of selectively etching an insulation stack for a metal interconnect |
| US8741778B2 (en) * | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
| CN102792446A (zh) * | 2011-01-17 | 2012-11-21 | 住友电气工业株式会社 | 用于制造碳化硅半导体器件的方法 |
| JP5719648B2 (ja) * | 2011-03-14 | 2015-05-20 | 東京エレクトロン株式会社 | エッチング方法、およびエッチング装置 |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| CN103489757A (zh) * | 2013-10-16 | 2014-01-01 | 信利半导体有限公司 | 一种用于叠层绝缘薄膜的刻蚀方法 |
| JP6315809B2 (ja) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6494424B2 (ja) * | 2015-05-29 | 2019-04-03 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6541439B2 (ja) * | 2015-05-29 | 2019-07-10 | 東京エレクトロン株式会社 | エッチング方法 |
| CN105206525A (zh) * | 2015-09-28 | 2015-12-30 | 上海华力微电子有限公司 | 解决锗硅生长工艺中栅极顶角缺陷的方法 |
| JP6670672B2 (ja) * | 2016-05-10 | 2020-03-25 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6929148B2 (ja) * | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP6817168B2 (ja) * | 2017-08-25 | 2021-01-20 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP7061941B2 (ja) * | 2018-08-06 | 2022-05-02 | 東京エレクトロン株式会社 | エッチング方法及び半導体デバイスの製造方法 |
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
| JP7478059B2 (ja) * | 2020-08-05 | 2024-05-02 | 株式会社アルバック | シリコンのドライエッチング方法 |
| JP7535408B2 (ja) | 2020-08-12 | 2024-08-16 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
| CN112687537B (zh) | 2020-12-17 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 金属硬掩膜刻蚀方法 |
| US20250149294A1 (en) * | 2022-07-25 | 2025-05-08 | Hitachi High-Tech Corporation | Plasma processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160077A (ja) * | 1991-12-05 | 1993-06-25 | Sharp Corp | プラズマエッチング方法 |
| JPH11214651A (ja) * | 1998-01-23 | 1999-08-06 | Toshiba Corp | 半導体装置の製造方法 |
| TW451395B (en) * | 1999-06-30 | 2001-08-21 | Lam Res Corp | Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features |
| US20060032833A1 (en) * | 2004-08-10 | 2006-02-16 | Applied Materials, Inc. | Encapsulation of post-etch halogenic residue |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62154627A (ja) * | 1985-12-26 | 1987-07-09 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
| JPH05217954A (ja) * | 1992-02-05 | 1993-08-27 | Sharp Corp | ドライエッチング終点検出方法 |
| JP2001274141A (ja) * | 2000-03-27 | 2001-10-05 | Sony Corp | 半導体装置の製造方法 |
| JP2001358061A (ja) * | 2000-04-12 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP3946724B2 (ja) * | 2004-01-29 | 2007-07-18 | シャープ株式会社 | 半導体装置の製造方法 |
-
2006
- 2006-03-23 JP JP2006080464A patent/JP4877747B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-22 TW TW96109942A patent/TWI401741B/zh not_active IP Right Cessation
- 2007-03-22 CN CNB2007100894235A patent/CN100521105C/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160077A (ja) * | 1991-12-05 | 1993-06-25 | Sharp Corp | プラズマエッチング方法 |
| JPH11214651A (ja) * | 1998-01-23 | 1999-08-06 | Toshiba Corp | 半導体装置の製造方法 |
| TW451395B (en) * | 1999-06-30 | 2001-08-21 | Lam Res Corp | Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features |
| US20060032833A1 (en) * | 2004-08-10 | 2006-02-16 | Applied Materials, Inc. | Encapsulation of post-etch halogenic residue |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4877747B2 (ja) | 2012-02-15 |
| JP2007258426A (ja) | 2007-10-04 |
| CN100521105C (zh) | 2009-07-29 |
| CN101043004A (zh) | 2007-09-26 |
| TW200746293A (en) | 2007-12-16 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |