JP4877747B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP4877747B2
JP4877747B2 JP2006080464A JP2006080464A JP4877747B2 JP 4877747 B2 JP4877747 B2 JP 4877747B2 JP 2006080464 A JP2006080464 A JP 2006080464A JP 2006080464 A JP2006080464 A JP 2006080464A JP 4877747 B2 JP4877747 B2 JP 4877747B2
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Japan
Prior art keywords
gas
etching
film
flow rate
silicon
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JP2006080464A
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English (en)
Japanese (ja)
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JP2007258426A (ja
JP2007258426A5 (enrdf_load_stackoverflow
Inventor
秋広 菊池
崇司 角田
雄一郎 坂本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2006080464A priority Critical patent/JP4877747B2/ja
Priority to CNB2007100894235A priority patent/CN100521105C/zh
Priority to TW96109942A priority patent/TWI401741B/zh
Priority to US11/689,629 priority patent/US7794617B2/en
Publication of JP2007258426A publication Critical patent/JP2007258426A/ja
Publication of JP2007258426A5 publication Critical patent/JP2007258426A5/ja
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006080464A 2006-03-23 2006-03-23 プラズマエッチング方法 Expired - Fee Related JP4877747B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006080464A JP4877747B2 (ja) 2006-03-23 2006-03-23 プラズマエッチング方法
CNB2007100894235A CN100521105C (zh) 2006-03-23 2007-03-22 等离子体蚀刻方法
TW96109942A TWI401741B (zh) 2006-03-23 2007-03-22 Plasma etching method
US11/689,629 US7794617B2 (en) 2006-03-23 2007-03-22 Plasma etching method, plasma processing apparatus, control program and computer readable storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006080464A JP4877747B2 (ja) 2006-03-23 2006-03-23 プラズマエッチング方法

Publications (3)

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JP2007258426A JP2007258426A (ja) 2007-10-04
JP2007258426A5 JP2007258426A5 (enrdf_load_stackoverflow) 2009-04-16
JP4877747B2 true JP4877747B2 (ja) 2012-02-15

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JP2006080464A Expired - Fee Related JP4877747B2 (ja) 2006-03-23 2006-03-23 プラズマエッチング方法

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JP (1) JP4877747B2 (enrdf_load_stackoverflow)
CN (1) CN100521105C (enrdf_load_stackoverflow)
TW (1) TWI401741B (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102653B2 (ja) * 2008-02-29 2012-12-19 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP5264231B2 (ja) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
JP5457021B2 (ja) * 2008-12-22 2014-04-02 東京エレクトロン株式会社 混合ガスの供給方法及び混合ガスの供給装置
US8435901B2 (en) * 2010-06-11 2013-05-07 Tokyo Electron Limited Method of selectively etching an insulation stack for a metal interconnect
US8741778B2 (en) * 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
CN102792446A (zh) * 2011-01-17 2012-11-21 住友电气工业株式会社 用于制造碳化硅半导体器件的方法
JP5719648B2 (ja) * 2011-03-14 2015-05-20 東京エレクトロン株式会社 エッチング方法、およびエッチング装置
JP5968130B2 (ja) * 2012-07-10 2016-08-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN103489757A (zh) * 2013-10-16 2014-01-01 信利半导体有限公司 一种用于叠层绝缘薄膜的刻蚀方法
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6494424B2 (ja) * 2015-05-29 2019-04-03 東京エレクトロン株式会社 エッチング方法
JP6541439B2 (ja) * 2015-05-29 2019-07-10 東京エレクトロン株式会社 エッチング方法
CN105206525A (zh) * 2015-09-28 2015-12-30 上海华力微电子有限公司 解决锗硅生长工艺中栅极顶角缺陷的方法
JP6670672B2 (ja) * 2016-05-10 2020-03-25 東京エレクトロン株式会社 エッチング方法
JP6929148B2 (ja) * 2017-06-30 2021-09-01 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP6817168B2 (ja) * 2017-08-25 2021-01-20 東京エレクトロン株式会社 被処理体を処理する方法
JP7061941B2 (ja) * 2018-08-06 2022-05-02 東京エレクトロン株式会社 エッチング方法及び半導体デバイスの製造方法
GB201917734D0 (en) * 2019-12-04 2020-01-15 Spts Technologies Ltd Method, substrate and apparatus
JP7478059B2 (ja) * 2020-08-05 2024-05-02 株式会社アルバック シリコンのドライエッチング方法
JP7535408B2 (ja) 2020-08-12 2024-08-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
CN112687537B (zh) 2020-12-17 2024-05-17 北京北方华创微电子装备有限公司 金属硬掩膜刻蚀方法
US20250149294A1 (en) * 2022-07-25 2025-05-08 Hitachi High-Tech Corporation Plasma processing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154627A (ja) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd ドライエツチング方法
JP2758754B2 (ja) * 1991-12-05 1998-05-28 シャープ株式会社 プラズマエッチング方法
JPH05217954A (ja) * 1992-02-05 1993-08-27 Sharp Corp ドライエッチング終点検出方法
JP3665701B2 (ja) * 1998-01-23 2005-06-29 株式会社東芝 半導体装置の製造方法
US6218309B1 (en) * 1999-06-30 2001-04-17 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
JP2001274141A (ja) * 2000-03-27 2001-10-05 Sony Corp 半導体装置の製造方法
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP3946724B2 (ja) * 2004-01-29 2007-07-18 シャープ株式会社 半導体装置の製造方法
US20060032833A1 (en) * 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue

Also Published As

Publication number Publication date
JP2007258426A (ja) 2007-10-04
CN100521105C (zh) 2009-07-29
TWI401741B (zh) 2013-07-11
CN101043004A (zh) 2007-09-26
TW200746293A (en) 2007-12-16

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