TWI401329B - Sputtering source, sputtering apparatus, and film manufacturing method - Google Patents

Sputtering source, sputtering apparatus, and film manufacturing method Download PDF

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Publication number
TWI401329B
TWI401329B TW094145890A TW94145890A TWI401329B TW I401329 B TWI401329 B TW I401329B TW 094145890 A TW094145890 A TW 094145890A TW 94145890 A TW94145890 A TW 94145890A TW I401329 B TWI401329 B TW I401329B
Authority
TW
Taiwan
Prior art keywords
target
shielding plate
sputtering
opening
disposed
Prior art date
Application number
TW094145890A
Other languages
English (en)
Chinese (zh)
Other versions
TW200626738A (en
Inventor
Toshio Negishi
Masahiro Ito
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200626738A publication Critical patent/TW200626738A/zh
Application granted granted Critical
Publication of TWI401329B publication Critical patent/TWI401329B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW094145890A 2004-12-28 2005-12-22 Sputtering source, sputtering apparatus, and film manufacturing method TWI401329B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004378688 2004-12-28

Publications (2)

Publication Number Publication Date
TW200626738A TW200626738A (en) 2006-08-01
TWI401329B true TWI401329B (zh) 2013-07-11

Family

ID=36614752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145890A TWI401329B (zh) 2004-12-28 2005-12-22 Sputtering source, sputtering apparatus, and film manufacturing method

Country Status (5)

Country Link
JP (1) JP4865570B2 (ja)
KR (1) KR101255375B1 (ja)
CN (1) CN100557071C (ja)
TW (1) TWI401329B (ja)
WO (1) WO2006070633A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531599B2 (ja) * 2005-03-17 2010-08-25 株式会社アルバック スパッタ源、スパッタ装置
JP2009138230A (ja) * 2007-12-06 2009-06-25 Ulvac Japan Ltd スパッタ装置及び成膜方法
TWI512791B (zh) * 2013-08-26 2015-12-11 Au Optronics Corp 圖案化膜層的製造方法以及電致變色裝置的製造方法
JP7138504B2 (ja) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
CN115404449B (zh) * 2021-05-28 2023-12-01 鑫天虹(厦门)科技有限公司 可调整磁场分布的薄膜沉积设备及其磁场调整装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
EP0521045B1 (en) * 1990-03-17 1997-11-12 Teer Coatings Limited Magnetron sputter ion plating
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
TW413726B (en) * 1999-11-20 2000-12-01 Prec Instr Dev Ct Method for monitoring thickness uniformity of films based on spectroscopic measurement
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
US20030164288A1 (en) * 2002-03-02 2003-09-04 Shinzo Onishi Magnetron sputtering target for magnetic materials
TW589393B (en) * 2000-05-18 2004-06-01 Prec Instr Dev Ct Nat An improved process for deposition a thin film by sputtering
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method
US20040149565A1 (en) * 2001-06-12 2004-08-05 Unaxis Balzers Limited Method for manufacturing a workpiece using a magnetron sputter source
TWI223672B (en) * 2000-10-26 2004-11-11 Prec Instr Dev Ct Nat An improved process of ion-assistance sputtering deposition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6438996A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPS6438995A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPH01139762A (ja) * 1987-11-25 1989-06-01 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH03243761A (ja) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd スパッタリング装置
JP3719797B2 (ja) * 1996-11-08 2005-11-24 株式会社アルバック 有機薄膜表面への導電性薄膜形成方法
JPH10158821A (ja) * 1996-11-27 1998-06-16 Tdk Corp 有機ｅｌ発光素子の製造装置および方法
JP3884814B2 (ja) * 1997-02-13 2007-02-21 Ｔｄｋ株式会社 有機ｅｌ発光素子の製造装置および方法
JP2002339061A (ja) * 2001-05-16 2002-11-27 Canon Inc 薄膜形成方法
JP4423589B2 (ja) * 2003-11-07 2010-03-03 富士電機ホールディングス株式会社 スパッタ装置、スパッタ方法、有機ｅｌ発光素子の製造装置および有機ｅｌ発光素子の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
EP0521045B1 (en) * 1990-03-17 1997-11-12 Teer Coatings Limited Magnetron sputter ion plating
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
TW413726B (en) * 1999-11-20 2000-12-01 Prec Instr Dev Ct Method for monitoring thickness uniformity of films based on spectroscopic measurement
TW589393B (en) * 2000-05-18 2004-06-01 Prec Instr Dev Ct Nat An improved process for deposition a thin film by sputtering
TWI223672B (en) * 2000-10-26 2004-11-11 Prec Instr Dev Ct Nat An improved process of ion-assistance sputtering deposition
US20040149565A1 (en) * 2001-06-12 2004-08-05 Unaxis Balzers Limited Method for manufacturing a workpiece using a magnetron sputter source
US20030164288A1 (en) * 2002-03-02 2003-09-04 Shinzo Onishi Magnetron sputtering target for magnetic materials
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method

Also Published As

Publication number Publication date
JP4865570B2 (ja) 2012-02-01
KR20070099414A (ko) 2007-10-09
KR101255375B1 (ko) 2013-04-17
CN100557071C (zh) 2009-11-04
WO2006070633A1 (ja) 2006-07-06
JPWO2006070633A1 (ja) 2008-06-12
TW200626738A (en) 2006-08-01
CN1993491A (zh) 2007-07-04

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