CN100557071C - 溅射源、溅镀装置、薄膜的制造方法 - Google Patents

溅射源、溅镀装置、薄膜的制造方法 Download PDF

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Publication number
CN100557071C
CN100557071C CNB2005800256784A CN200580025678A CN100557071C CN 100557071 C CN100557071 C CN 100557071C CN B2005800256784 A CNB2005800256784 A CN B2005800256784A CN 200580025678 A CN200580025678 A CN 200580025678A CN 100557071 C CN100557071 C CN 100557071C
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CN
China
Prior art keywords
target
masking shield
peristome
sputtering
magnet portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800256784A
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English (en)
Chinese (zh)
Other versions
CN1993491A (zh
Inventor
根岸敏夫
伊藤正博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
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Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN1993491A publication Critical patent/CN1993491A/zh
Application granted granted Critical
Publication of CN100557071C publication Critical patent/CN100557071C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CNB2005800256784A 2004-12-28 2005-12-19 溅射源、溅镀装置、薄膜的制造方法 Expired - Fee Related CN100557071C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP378688/2004 2004-12-28
JP2004378688 2004-12-28

Publications (2)

Publication Number Publication Date
CN1993491A CN1993491A (zh) 2007-07-04
CN100557071C true CN100557071C (zh) 2009-11-04

Family

ID=36614752

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800256784A Expired - Fee Related CN100557071C (zh) 2004-12-28 2005-12-19 溅射源、溅镀装置、薄膜的制造方法

Country Status (5)

Country Link
JP (1) JP4865570B2 (ja)
KR (1) KR101255375B1 (ja)
CN (1) CN100557071C (ja)
TW (1) TWI401329B (ja)
WO (1) WO2006070633A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531599B2 (ja) * 2005-03-17 2010-08-25 株式会社アルバック スパッタ源、スパッタ装置
JP2009138230A (ja) * 2007-12-06 2009-06-25 Ulvac Japan Ltd スパッタ装置及び成膜方法
TWI512791B (zh) * 2013-08-26 2015-12-11 Au Optronics Corp 圖案化膜層的製造方法以及電致變色裝置的製造方法
JP7138504B2 (ja) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
CN115404449B (zh) * 2021-05-28 2023-12-01 鑫天虹(厦门)科技有限公司 可调整磁场分布的薄膜沉积设备及其磁场调整装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
JPS6438996A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPS6438995A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPH01139762A (ja) * 1987-11-25 1989-06-01 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH03243761A (ja) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd スパッタリング装置
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
JP3719797B2 (ja) * 1996-11-08 2005-11-24 株式会社アルバック 有機薄膜表面への導電性薄膜形成方法
JPH10158821A (ja) * 1996-11-27 1998-06-16 Tdk Corp 有機ｅｌ発光素子の製造装置および方法
JP3884814B2 (ja) * 1997-02-13 2007-02-21 Ｔｄｋ株式会社 有機ｅｌ発光素子の製造装置および方法
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
TW413726B (en) * 1999-11-20 2000-12-01 Prec Instr Dev Ct Method for monitoring thickness uniformity of films based on spectroscopic measurement
TW589393B (en) * 2000-05-18 2004-06-01 Prec Instr Dev Ct Nat An improved process for deposition a thin film by sputtering
TWI223672B (en) * 2000-10-26 2004-11-11 Prec Instr Dev Ct Nat An improved process of ion-assistance sputtering deposition
JP2002339061A (ja) 2001-05-16 2002-11-27 Canon Inc 薄膜形成方法
TWI229138B (en) * 2001-06-12 2005-03-11 Unaxis Balzers Ag Magnetron-sputtering source
US6623610B1 (en) * 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method
JP4423589B2 (ja) * 2003-11-07 2010-03-03 富士電機ホールディングス株式会社 スパッタ装置、スパッタ方法、有機ｅｌ発光素子の製造装置および有機ｅｌ発光素子の製造方法

Also Published As

Publication number Publication date
CN1993491A (zh) 2007-07-04
JPWO2006070633A1 (ja) 2008-06-12
WO2006070633A1 (ja) 2006-07-06
TW200626738A (en) 2006-08-01
TWI401329B (zh) 2013-07-11
KR20070099414A (ko) 2007-10-09
KR101255375B1 (ko) 2013-04-17
JP4865570B2 (ja) 2012-02-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091104

Termination date: 20201219

CF01 Termination of patent right due to non-payment of annual fee