WO2006070633A1 - スパッタ源、スパッタ装置、薄膜の製造方法 - Google Patents
スパッタ源、スパッタ装置、薄膜の製造方法 Download PDFInfo
- Publication number
- WO2006070633A1 WO2006070633A1 PCT/JP2005/023276 JP2005023276W WO2006070633A1 WO 2006070633 A1 WO2006070633 A1 WO 2006070633A1 JP 2005023276 W JP2005023276 W JP 2005023276W WO 2006070633 A1 WO2006070633 A1 WO 2006070633A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- shielding plate
- opening
- sputtering
- thin film
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 81
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title description 14
- 239000010408 film Substances 0.000 claims abstract description 44
- 239000002245 particle Substances 0.000 claims abstract description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Definitions
- the present invention relates to an organic EL element manufacturing method and manufacturing apparatus, and more particularly to an organic EL element manufacturing method and manufacturing apparatus in which electrodes are formed on an organic layer by sputtering.
- the metal or alloy is heated to a high temperature and evaporated to be deposited on the substrate on which the organic layer is formed. Therefore, the vapor deposition source is sufficiently separated from the substrate so that the organic layer is not damaged at a high temperature. And it was necessary to cool the substrate. In addition, the film deposition rate was not fast enough to suppress the temperature rise.
- the generated charged particles may damage the organic layer.
- the organic layer used in organic EL, etc. is very delicate, and damage due to incident charged particles may cause loss or significant deterioration of functions such as electron or hole transfer.
- Patent Document a technique for reducing the number of electrons colliding with the substrate by providing a ground potential or positive potential grid electrode between the substrate and the target is disclosed.
- Patent Document 2 a technique for reducing the number of electrons that collide with the substrate by generating a magnetic field parallel to the substrate between the substrate and the target is disclosed.
- Patent Document 1 JP 10-158821 A
- Patent Document 2 JP-A-10-228981
- an electrode film forming method and a forming apparatus capable of suppressing damage to an organic layer when a sputtered film of metal or the like is formed on the organic layer by sputtering. Furthermore, the present invention provides a sputtered film forming method and a forming apparatus that can easily cope with an increase in the size of a substrate.
- an apparatus for forming an electrode film by sputtering capable of forming a plurality of metals simultaneously or sequentially with one apparatus is provided.
- the present invention includes a target and a shielding plate that is spaced apart from the target and has an elongated opening, and the sputtered particles emitted from the target are A splatter source configured to pass through an opening and reach a film formation target surface, and the first and second traps on both sides of the opening along the longitudinal direction of the opening.
- the sputter source is provided with a magnet portion, and different magnetic poles are disposed on the side surfaces of the first and second trap magnet portions facing the opening.
- the present invention is the sputtering source, wherein the shielding plate is connected to a positive voltage with respect to a voltage applied to the target.
- the shielding plate is a sputtering source having the same potential as the vacuum chamber in which the sputtering source is disposed.
- the target is disposed inside a container-shaped housing
- the shielding plate Is a sputter source that is disposed in the opening of the housing via an insulator, and the housing and the shielding plate are insulated.
- the present invention is the sputtering source in which the opening is configured by arranging a plurality of openings.
- the present invention includes a target and a shielding plate that is disposed apart from the target and has an elongated opening, and the sputtering particles emitted from the target pass through the opening to be deposited.
- a sputtering source configured to reach an object surface, wherein the shielding plate is a sputtering source connected to a positive voltage with respect to a voltage applied to the target.
- the shielding plate is a sputtering source having the same potential as the vacuum chamber in which the sputtering source is disposed.
- the vacuum chamber and the shielding plate are connected to a ground potential
- the target is a sputtering source to which a negative voltage is applied with respect to the ground potential. Further, according to the present invention, the target is disposed inside a container-shaped housing, the shielding plate is disposed through an opening in the housing, and the housing and the shielding plate are insulated. Sputtering source.
- the present invention is the sputtering source in which the opening is configured by arranging a plurality of openings.
- the present invention also includes a vacuum chamber and a sputtering source disposed in the vacuum chamber, wherein the sputtering source includes a target, a shielding plate, and an elongated opening formed in the shielding plate.
- the shielding plate is disposed apart from the target, and the sputtering particles emitted from the target pass through the opening to reach the surface of the film formation target,
- the shielding plate is connected to a positive voltage with respect to the voltage applied to the target, and is configured such that the film formation target and the sputtering source are relatively moved in a direction perpendicular to the longitudinal direction of the opening.
- Sputter apparatus is configured such that the film formation target and the sputtering source are relatively moved in a direction perpendicular to the longitudinal direction of the opening.
- the present invention is a sputtering apparatus in which the shielding plate and the vacuum chamber are connected to a ground potential.
- the present invention also includes a vacuum chamber and a sputtering source disposed in the vacuum chamber, wherein the sputtering source includes a target, a shielding plate, and an elongated opening formed in the shielding plate.
- First and second trap magnet parts, and the shielding plate is disposed apart from the target, The sputtered particles emitted from the target pass through the opening and reach the surface of the film formation target, and the sputter source is arranged apart from the target and the elongated opening.
- the first and second trap magnet parts are configured such that the sputtered particles emitted from the target pass through the opening and reach the film formation target surface.
- this invention is a sputtering device with which the said shielding board was connected to the positive voltage with respect to the voltage applied to the said target.
- the present invention is a sputtering apparatus in which the shielding plate and the vacuum chamber are connected to a ground potential.
- the present invention allows the sputtering particles, which are also released from the target surface force disposed in the vacuum chamber, to pass through the opening provided in the shielding plate and reach the organic thin film surface exposed on the film formation target, A thin film manufacturing method for forming a thin film, wherein a positive voltage is applied to the shielding plate with respect to the potential of the target.
- the present invention connects the shielding plate and the vacuum chamber to a ground potential
- the target is applied with a negative voltage with respect to the ground potential.
- the present invention allows the sputtering particles, which are also released from the target surface force disposed in the vacuum chamber, to pass through the opening provided in the shielding plate and reach the organic thin film surface exposed on the film formation target, A method of manufacturing a thin film for forming a thin film, wherein a magnetic force line parallel to the shielding plate is formed, and the sputtered particles passing through the magnetic force line are incident on the surface of the organic thin film.
- the present invention is also a thin film manufacturing method in which a positive voltage is applied to the shielding plate with respect to the potential of the target.
- the present invention is a method for producing a thin film in which the shielding plate and the vacuum chamber are connected to a ground potential, and a negative voltage is applied to the target with respect to the ground potential.
- the present invention is configured as described above, and charged particles having a large electron or charge Z mass ratio do not reach the film formation target, and a thin film is formed by neutral particles. Therefore, deposition target Even if a thin film that is easily damaged is formed, the thin film can be deposited on the surface of the thin film by sputtering.
- FIG. 1 shows an example of the sputtering apparatus of the present invention.
- FIG. 4 Another example of the sputtering source of the present invention
- FIG. 5 Another example of the sputtering source of the present invention
- reference numerals 11 to 13 are sputtering sources of the present invention, and reference numeral 1 is a sputtering source thereof.
- the sputtering apparatus 1 has a vacuum chamber 10, and one to a plurality of sputtering sources 11 to 13 are arranged in the vacuum chamber 10. Here are three.
- An evacuation system 25 is connected to the vacuum chamber 10 so that the inside of the vacuum chamber 10 can be evacuated.
- the vacuum chamber 10 is provided with a carry-in hole 21 and a carry-out hole 22, and the vacuum chamber 10 is evacuated by a vacuum exhaust system 25, and after reaching a predetermined pressure, the vacuum vessel 10 is provided in the carry-in hole 21. Vacuum valve The film formation target 30 is carried into the vacuum chamber from the organic thin film manufacturing apparatus of the previous process connected to the carry-in hole 21.
- An organic thin film is formed on the surface of the film formation target 30 to be carried. This organic thin film is directed downward.
- Each of the sputter sources 11 to 13 is configured to emit sputtered particles as will be described later.
- a sputtering gas is introduced into the sputtering sources 11 to 13, and the film formation target 30 is moved while discharging the sputtering particles from the sputtering sources 11 to 13, and each sputtering source 11 is moved.
- a sputtered thin film such as a conductive thin film is formed on the surface of the organic thin film of the film formation target 30.
- the vacuum valve provided in the carry-out hole 22 is opened, and the film formation target 30 on which the sputtered film is formed is transferred from the carry-out hole 22 to a post-process manufacturing apparatus. It is conveyed to.
- the vacuum atmosphere is maintained even when the film formation target 30 is carried in from the carry-in hole 21 and carried out from the carry-out hole 22.
- Reference numeral 23 denotes a holder for holding the film formation target 30, and reference numeral 24 denotes a moving device for moving the film formation target.
- each of the sputter sources 11 to 13 has the same structure, and its external appearance is shown in FIG. 2 (a) and the inside is shown in FIG. 2 (b).
- the sputter sources 11 to 13 have an elongated casing 101.
- the casing 101 has a container shape, and an elongated target portion 120 is disposed on the bottom wall in the casing 101.
- the target unit 120 is configured such that the target 122 is fixed on the surface of the target holder 121, and the magnetron discharge magnet 123 is disposed on the back surface side.
- the target 122 has an elongated plate shape, and is arranged along the longitudinal direction of the casing 101 inside the casing 101, and the surface of the target 122 is directed parallel to the opening of the casing 101.
- the target 122 is a conductive material such as a metal material.
- the target holder 121 is connected to the sputter power source 108, and a DC negative voltage or an AC voltage including a bias voltage is supplied to the target holder 121 via the target holder 121. It can be applied to 122.
- an elongated shielding plate 103 is disposed via an insulator 104, and the opening of the housing 101 is closed by the shielding plate 103.
- the target 122 is surrounded by the side wall of the casing 101 on the front, rear, left and right sides, and the upper position of the target 122 is also blocked by the shielding plate 103 except for the opening 107a described later. It is peeled off. Accordingly, the surface of the target 122, the surface of the target 122, the wall surface of the housing 101, and the shielding plate 103 surround the space on the surface of the target 122. Plasma described later is formed in this space.
- At least surfaces of the casing 101 and the shielding plate 103 are made of a conductive material.
- the casing 101 and the shielding plate 103 are made of metal, for example.
- the casing 101 is insulated from the shielding plate 103 and the vacuum chamber 10 and is placed at a floating potential.
- the shielding plate 103 is electrically connected to the vacuum chamber 10. Since the vacuum chamber 10 is placed at the ground potential, the shielding plate 103 is also placed at the installation potential.
- the potential of the shielding plate 103 is closer to the ground potential than the voltage applied to the target 122 rather than the ground potential. If the voltage is positive with respect to the target 122, the potential of the shielding plate 103 may be positive with respect to the ground potential. It may be a negative voltage with respect to the ground voltage.
- the housing 101 may be an insulator. If the shielding plate 103 is set to a voltage other than the ground potential, the shielding plate is connected to the bias power source 110 and voltage is applied.
- the target 122 is disposed on the opening side surface of the casing 101 of the target holder 121, and the magnetron discharge magnet 123 is disposed on the bottom wall side of the casing 101 of the target holder 121. It is placed on the facing side.
- the surface of the target 122 and the back surface of the shielding plate 103 are parallel to each other so that they are aligned with each other.
- an elongated portion 107a that extends along the longitudinal direction of the shielding plate 103 and penetrates the shielding plate 103 in the thickness direction is formed.
- the insulator 104 is slender and is located between the shielding plate 103 and the upper end of the housing 101, the back surface of the shielding plate 103 is exposed to the internal space of the housing 101.
- the internal space of the body 101 is configured to be connected to the internal space of the vacuum chamber 10 outside the housing 101.
- elongated trap magnet portions 105 and 105 are arranged along the longitudinal direction of the opening 107a. In other words, the two trap magnet portions 105 and 105 are open on the side surface along one of the long sides.
- the side surface along the other long side parallel to the portion 107a is disposed at a position far from the opening portion 107a.
- the trap magnets 105 and 105 may be formed of elongated permanent magnets or small permanent magnets.
- Magnets may be arranged long and narrow. Moreover, you may comprise with an electromagnet.
- the two trap magnet portions 105, 105 disposed on both sides of the opening 107a.
- the other trap magnet 105 has at least one opposite magnetic pole (S pole) on one side in the longitudinal direction.
- the two trap magnets 105, 105 are on the side where the north and south poles face the opening 107a.
- the magnetic poles having different polarities face each other across the opening 107a.
- the two trap magnets 105, 105 are located above the opening 107a.
- magnetic lines of force extending in a direction parallel to the width direction of the opening 107a (perpendicular to the longitudinal direction) are formed.
- the magnetic field lines are substantially parallel to the surface of the shielding plate 103 and the surface of the target 122.
- trap magnets 105 and 105 are placed on the surface of shielding plate 103.
- Magnetic field lines may be formed in a region sandwiched between the side surfaces of the magnets 105 and 105.
- first and second trap magnets 105, 105 are arranged on the side surface of the opening 107a,
- the N pole and the S pole may be arranged on the side surfaces facing along the longitudinal direction of the opening 107a.
- magnetic lines of force that cover the opening 107a may be formed substantially parallel to the surface of the shielding plate 103 at a position including the inside of the opening 107a and close to the opening 107a.
- a sputtering gas supply system 109 is connected to the casing 101 of each sputtering source 11-13, and the evacuation system 25 of the vacuum chamber 10 operates to operate the casing of each sputtering source 11-13. 10
- the inside of the vacuum chamber 10 is evacuated together with the inside of the vacuum chamber 10 and reaches a predetermined pressure. be introduced.
- a negative voltage or an alternating voltage is applied to the target 122, a plasma is formed in the housing 101, the surface of the target 122 is sputtered, and the sputtered particles of the material constituting the target 122 have a target 122 surface force. Released into the housing 101.
- an electric field is formed between the shielding plate 103 and the target 122, and among the sputtered particles emitted from the target 122, the value of the charge Z mass (charge Z mass ratio). Large negative ions and most electrons are attracted to the shielding plate 103, enter the shielding plate 103, and become a current flowing between the ground potential and the shielding plate.
- Neutral particles go straight without being affected by the lines of magnetic force.
- the film formation target 30 is moving inside the vacuum chamber 10, and is located on the opening 107a, with the film formation surface on which the organic thin film is formed facing the opening 107a and facing the opening 107a.
- the neutral particles that have passed through the region sandwiched between the side surfaces of the two trapping magnets 105 and 105 are deposited on the object 30.
- the incident light enters the position facing the opening 107 a in the surface, and a sputtered thin film grows on the surface of the organic thin film of the film formation target 30.
- the force target 122 having the same structure as each of the sputter sources 11 to 13 may be arranged with a target 122 made of the same material or a target made of a different material.
- a sputtered thin film is formed by the neutral sputtered particles emitted from the sputter sources 11-13.
- targets 122 of different materials are arranged, different types of thin films can be stacked. For example, an electron injection layer is formed by the sputtering source 11 that passes first, The electrode film can be formed by the sputter sources 12 and 13 passing thereafter.
- charged particles do not reach the film formation target 30 by both the shielding plate 103 to which a positive voltage is applied to the target 122 and the trap magnets 105 and 105.
- a plurality of openings 131 may be arranged close to each other in one row or in a plurality of rows to form one opening 107 b.
- the openings 131 in FIGS. 3 (a) and 3 (b) are arranged in a line.
- the target unit 120 is disposed on the bottom wall of the casing 101.
- the present invention is not limited to this, and the target unit 120 is not limited thereto.
- Individual target portions 120 may be arranged.
- the targets 122 of the two target portions 120 along the longitudinal side surface may be arranged facing each other in parallel. For example, it can be directed to the central axis of the housing 101.
- the target part 120 with the target 122 facing the opening 107a is also formed on the bottom wall. May be arranged. When the area of the target 122 to be sputtered increases, a lot of sputtered particles are released, so that the film forming speed is improved.
- the sputter sources 11 to 13 of the first example and the sputter sources 14 and 15 of other examples are all arranged inside the vacuum chamber 10. Even if a part of ⁇ 15 is protruded to the outside of the vacuum chamber 10 or the openings 17a and 17b are directed to the inside of the vacuum chamber 10, the vacuum chamber 10 is disposed. Included in sputtering equipment.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006550687A JP4865570B2 (ja) | 2004-12-28 | 2005-12-19 | スパッタ源、スパッタ装置、薄膜の製造方法 |
KR1020067027766A KR101255375B1 (ko) | 2004-12-28 | 2005-12-19 | 스퍼터원, 스퍼터 장치, 박막의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-378688 | 2004-12-28 | ||
JP2004378688 | 2004-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006070633A1 true WO2006070633A1 (ja) | 2006-07-06 |
Family
ID=36614752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/023276 WO2006070633A1 (ja) | 2004-12-28 | 2005-12-19 | スパッタ源、スパッタ装置、薄膜の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4865570B2 (ja) |
KR (1) | KR101255375B1 (ja) |
CN (1) | CN100557071C (ja) |
TW (1) | TWI401329B (ja) |
WO (1) | WO2006070633A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006257498A (ja) * | 2005-03-17 | 2006-09-28 | Ulvac Japan Ltd | スパッタ源、スパッタ装置 |
JP2009138230A (ja) * | 2007-12-06 | 2009-06-25 | Ulvac Japan Ltd | スパッタ装置及び成膜方法 |
JP2022179487A (ja) * | 2018-07-31 | 2022-12-02 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI512791B (zh) * | 2013-08-26 | 2015-12-11 | Au Optronics Corp | 圖案化膜層的製造方法以及電致變色裝置的製造方法 |
CN115404449B (zh) * | 2021-05-28 | 2023-12-01 | 鑫天虹(厦门)科技有限公司 | 可调整磁场分布的薄膜沉积设备及其磁场调整装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03243761A (ja) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH10140344A (ja) * | 1996-11-08 | 1998-05-26 | Ulvac Japan Ltd | 有機薄膜表面への導電性薄膜形成方法、有機el素子 |
JPH10158821A (ja) * | 1996-11-27 | 1998-06-16 | Tdk Corp | 有機el発光素子の製造装置および方法 |
JPH10228981A (ja) * | 1997-02-13 | 1998-08-25 | Tdk Corp | 有機el発光素子の製造装置および方法 |
JP2002339061A (ja) * | 2001-05-16 | 2002-11-27 | Canon Inc | 薄膜形成方法 |
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US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
JPS6438996A (en) * | 1987-08-04 | 1989-02-09 | Japan Res Dev Corp | Manufacture of thin film el element |
JPS6438995A (en) * | 1987-08-04 | 1989-02-09 | Japan Res Dev Corp | Manufacture of thin film el element |
JPH01139762A (ja) * | 1987-11-25 | 1989-06-01 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
US5772858A (en) * | 1995-07-24 | 1998-06-30 | Applied Materials, Inc. | Method and apparatus for cleaning a target in a sputtering source |
US6193854B1 (en) * | 1999-01-05 | 2001-02-27 | Novellus Systems, Inc. | Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source |
TW413726B (en) * | 1999-11-20 | 2000-12-01 | Prec Instr Dev Ct | Method for monitoring thickness uniformity of films based on spectroscopic measurement |
TW589393B (en) * | 2000-05-18 | 2004-06-01 | Prec Instr Dev Ct Nat | An improved process for deposition a thin film by sputtering |
TWI223672B (en) * | 2000-10-26 | 2004-11-11 | Prec Instr Dev Ct Nat | An improved process of ion-assistance sputtering deposition |
TWI229138B (en) * | 2001-06-12 | 2005-03-11 | Unaxis Balzers Ag | Magnetron-sputtering source |
US6623610B1 (en) * | 2002-03-02 | 2003-09-23 | Shinzo Onishi | Magnetron sputtering target for magnetic materials |
TW593725B (en) * | 2002-04-30 | 2004-06-21 | Prodisc Technology Inc | Coating device and method |
JP4423589B2 (ja) * | 2003-11-07 | 2010-03-03 | 富士電機ホールディングス株式会社 | スパッタ装置、スパッタ方法、有機el発光素子の製造装置および有機el発光素子の製造方法 |
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2005
- 2005-12-19 JP JP2006550687A patent/JP4865570B2/ja not_active Expired - Fee Related
- 2005-12-19 WO PCT/JP2005/023276 patent/WO2006070633A1/ja not_active Application Discontinuation
- 2005-12-19 KR KR1020067027766A patent/KR101255375B1/ko active IP Right Grant
- 2005-12-19 CN CNB2005800256784A patent/CN100557071C/zh not_active Expired - Fee Related
- 2005-12-22 TW TW094145890A patent/TWI401329B/zh active
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JPH03243761A (ja) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | スパッタリング装置 |
JPH10140344A (ja) * | 1996-11-08 | 1998-05-26 | Ulvac Japan Ltd | 有機薄膜表面への導電性薄膜形成方法、有機el素子 |
JPH10158821A (ja) * | 1996-11-27 | 1998-06-16 | Tdk Corp | 有機el発光素子の製造装置および方法 |
JPH10228981A (ja) * | 1997-02-13 | 1998-08-25 | Tdk Corp | 有機el発光素子の製造装置および方法 |
JP2002339061A (ja) * | 2001-05-16 | 2002-11-27 | Canon Inc | 薄膜形成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006257498A (ja) * | 2005-03-17 | 2006-09-28 | Ulvac Japan Ltd | スパッタ源、スパッタ装置 |
JP2009138230A (ja) * | 2007-12-06 | 2009-06-25 | Ulvac Japan Ltd | スパッタ装置及び成膜方法 |
JP2022179487A (ja) * | 2018-07-31 | 2022-12-02 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
JP7461427B2 (ja) | 2018-07-31 | 2024-04-03 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
Also Published As
Publication number | Publication date |
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KR101255375B1 (ko) | 2013-04-17 |
CN100557071C (zh) | 2009-11-04 |
CN1993491A (zh) | 2007-07-04 |
JP4865570B2 (ja) | 2012-02-01 |
KR20070099414A (ko) | 2007-10-09 |
TW200626738A (en) | 2006-08-01 |
JPWO2006070633A1 (ja) | 2008-06-12 |
TWI401329B (zh) | 2013-07-11 |
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