JPS6438995A - Manufacture of thin film el element - Google Patents

Manufacture of thin film el element

Info

Publication number
JPS6438995A
JPS6438995A JP62195981A JP19598187A JPS6438995A JP S6438995 A JPS6438995 A JP S6438995A JP 62195981 A JP62195981 A JP 62195981A JP 19598187 A JP19598187 A JP 19598187A JP S6438995 A JPS6438995 A JP S6438995A
Authority
JP
Japan
Prior art keywords
substrate
emission layer
target
emission
brightness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195981A
Other languages
Japanese (ja)
Inventor
Takuya Yoshimi
Kazuhiro Watanabe
Kenji Okamoto
Terunobu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Japan Science and Technology Agency
Original Assignee
Fujitsu Ltd
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Research Development Corp of Japan filed Critical Fujitsu Ltd
Priority to JP62195981A priority Critical patent/JPS6438995A/en
Publication of JPS6438995A publication Critical patent/JPS6438995A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE:To improve the brightness or emission effectiveness of an emission layer by forming an electric shield screen between a substrate and target when forming the emission layer with target components made to be attached to the substrate. CONSTITUTION:Surfaces of each target 13 and 15 are striked by a sputter gas made in a plasma state, and target components striked out from surfaces are made to wholly attach on the insulation film surface on a substrate 1. In the sputter process, when the substrate 1 is covered with e.g. a mesh-state metal plate 21, ion-like charged particles of a sputter gas made to be a plasma state are electrically shielded with the plate 21. This eliminates the damage of a crystal of an emission layer formed thereby or the disarrangement of the crystal, and thereby prevents lowering of an emission efficiency or brightness of the emission layer.
JP62195981A 1987-08-04 1987-08-04 Manufacture of thin film el element Pending JPS6438995A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195981A JPS6438995A (en) 1987-08-04 1987-08-04 Manufacture of thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195981A JPS6438995A (en) 1987-08-04 1987-08-04 Manufacture of thin film el element

Publications (1)

Publication Number Publication Date
JPS6438995A true JPS6438995A (en) 1989-02-09

Family

ID=16350223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195981A Pending JPS6438995A (en) 1987-08-04 1987-08-04 Manufacture of thin film el element

Country Status (1)

Country Link
JP (1) JPS6438995A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006070633A1 (en) * 2004-12-28 2008-06-12 株式会社アルバック Sputtering source, sputtering apparatus, and thin film manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006070633A1 (en) * 2004-12-28 2008-06-12 株式会社アルバック Sputtering source, sputtering apparatus, and thin film manufacturing method
JP4865570B2 (en) * 2004-12-28 2012-02-01 株式会社アルバック Sputtering source, sputtering apparatus, and thin film manufacturing method

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