JPH0679512B2 - Method for manufacturing thin film EL panel - Google Patents
Method for manufacturing thin film EL panelInfo
- Publication number
- JPH0679512B2 JPH0679512B2 JP1158030A JP15803089A JPH0679512B2 JP H0679512 B2 JPH0679512 B2 JP H0679512B2 JP 1158030 A JP1158030 A JP 1158030A JP 15803089 A JP15803089 A JP 15803089A JP H0679512 B2 JPH0679512 B2 JP H0679512B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating layer
- panel
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 ＜産業上の利用分野＞ この発明は、発光層の上下に絶縁層を設けたいわゆる三
層構造を有する薄膜ELパネルの製造方法に関する。The present invention relates to a method for manufacturing a thin film EL panel having a so-called three-layer structure in which insulating layers are provided above and below a light emitting layer.
＜従来の技術＞ 従来、この種の薄膜ELパネルの製造方法としては第４図
（ａ）乃至（ｃ）に示すようなものがある。すなわち、
ガラス基板11の表面にITO（インジウム錫酸化物）から
なる透明導電膜を形成し、フォトエッチングして、平行
な帯状の透明電極12を形成する（第４図（ａ））。次
に、第３図（ａ）に示すように、基板11を、表面を下向
きにして基板ホルダ20に取り付け、膜を形成しない周辺
領域を枠状のマスク21で覆う。そして、形成する膜の密
着強度が大きくなるように上記基板11を加熱した状態
で、第４図（ｂ）に示すように、電子ビーム蒸着法また
はスパッタ法によって、Si3N4膜を有する下部絶縁層13
と、ZnS:Mnからなる発光層14と、Si3N4膜を有する上部
絶縁層15とを形成する。最後に、電子ビーム蒸着法によ
って金属膜を形成し、フォトエッチングして、帯状の背
面電極16と端子電極17を形成する（第４図（ｃ））。<Prior Art> Conventionally, as a method of manufacturing a thin film EL panel of this type, there is one as shown in FIGS. 4 (a) to 4 (c). That is,
A transparent conductive film made of ITO (Indium Tin Oxide) is formed on the surface of the glass substrate 11 and photo-etched to form parallel strip-shaped transparent electrodes 12 (FIG. 4A). Next, as shown in FIG. 3 (a), the substrate 11 is attached to the substrate holder 20 with its surface facing downward, and the peripheral region where no film is formed is covered with the frame-shaped mask 21. Then, while the substrate 11 is heated so that the adhesion strength of the film to be formed is increased, as shown in FIG. 4 (b), the lower portion having the Si 3 N 4 film is formed by the electron beam evaporation method or the sputtering method. Insulation layer 13
Then, a light emitting layer 14 made of ZnS: Mn and an upper insulating layer 15 having a Si 3 N 4 film are formed. Finally, a metal film is formed by the electron beam evaporation method and photoetched to form the strip-shaped back electrode 16 and the terminal electrode 17 (FIG. 4 (c)).
＜発明が解決しようとする課題＞ ところで、上記マスク21および基板ホルダ20は、基板11
よりも熱容量が大きいものであり、しかも支持部材によ
ってチャンバ壁面に取り付けられている。そのため、上
記基板11加熱時に、熱伝導によってチャンバ壁面に熱が
逃げて、第３図（ｂ）に示すように、基板11の周辺領域
が中心付近よりも低温であるような温度分布が生じる。
基板温度が低い領域は膜の成長レートが大きいので、上
記従来の製造方法のようにこの状態で下部絶縁層13,発
光層14,上部絶縁層15を形成する場合、これら三層の膜
厚は、第３図（ｃ）に示すように、膜形成領域E0の周辺
にて厚く、中心付近にて薄いような分布となる。上記膜
厚と発光輝度とは略比例する関係があるので、膜厚が上
記分布となった場合、第３図（ｄ）に示すように、発光
輝度は、膜形成領域E0すなわちパネルの表示領域D0に
て、鍋底状の分布を示し、輝度差B0を生じる。この輝度
差B0は、薄膜ELパネルの表示品位を著しく損なうもので
ある。<Problems to be Solved by the Invention> By the way, the mask 21 and the substrate holder 20 are provided on the substrate 11
It has a larger heat capacity than the above, and is attached to the chamber wall surface by a supporting member. Therefore, when the substrate 11 is heated, heat is radiated to the chamber wall surface due to heat conduction, and a temperature distribution is generated such that the peripheral region of the substrate 11 is lower in temperature than the central region as shown in FIG. 3B.
Since the region where the substrate temperature is low has a large film growth rate, when the lower insulating layer 13, the light emitting layer 14 and the upper insulating layer 15 are formed in this state as in the conventional manufacturing method, the film thickness of these three layers is As shown in FIG. 3C, the distribution is thick around the film formation region E 0 and thin around the center. Since the film thickness and the emission luminance have a substantially proportional relationship, when the film thickness has the above distribution, the emission luminance is the film formation region E 0, that is, the display of the panel, as shown in FIG. 3D. In the area D 0 , a pan-bottomed distribution is shown, and a brightness difference B 0 occurs. This brightness difference B 0 significantly impairs the display quality of the thin film EL panel.
そこで、この発明の目的は、表示領域内にて輝度差を抑
えて表示品位を向上させた薄膜ELパネルの製造方法を提
供することにある。Therefore, it is an object of the present invention to provide a method for manufacturing a thin film EL panel in which a difference in luminance is suppressed in a display area and display quality is improved.
＜課題を解決するための手段＞ 上記目的を達成するために、この発明は、ガラス基板上
に透明電極と下部絶縁層と発光層と上部絶縁層と背面電
極を順次積層して形成する薄膜ELパネルの製造方法にお
いて、 上記基板上の略全面に下部絶縁層、発光層、上部絶縁層
の三層を形成した後、パネルの表示領域をマスクし、上
記表示領域以外の周辺領域の上記下部絶縁層、発光層、
上部絶縁層を機械的研削手法で除去して透明電極の端部
を露出させて、この端部に導通する端子電極を設けるこ
とを特徴としている。<Means for Solving the Problems> In order to achieve the above object, the present invention provides a thin film EL formed by sequentially laminating a transparent electrode, a lower insulating layer, a light emitting layer, an upper insulating layer and a back electrode on a glass substrate. In the method of manufacturing a panel, after forming three layers of a lower insulating layer, a light emitting layer and an upper insulating layer on substantially the entire surface of the substrate, the display area of the panel is masked and the lower insulating layer of the peripheral area other than the display area is masked. Layer, light emitting layer,
It is characterized in that the upper insulating layer is removed by a mechanical grinding method to expose the end portion of the transparent electrode, and a terminal electrode that conducts is provided at this end portion.
＜作用＞ 基板上の略全面に発光層を形成する場合、蒸着またはス
パッタを行う際にマスクを使用しないので、マスクを使
用する場合に比して、基板加熱時に基板の周辺領域と中
心付近との温度差が小さくなる。したがって形成される
膜は、膜形成領域の周辺部にて厚く中心付近にて薄い傾
向に変わりはないが、膜厚バラツキが小さくなる。<Function> When a light emitting layer is formed on substantially the entire surface of a substrate, a mask is not used during vapor deposition or sputtering. The temperature difference between the two becomes smaller. Therefore, the formed film has the same tendency of being thick in the peripheral portion of the film forming region and thin in the vicinity of the center, but the variation in the film thickness is reduced.
さらに、膜厚の変動が大きい膜形成領域の周辺部を除去
し、その内側の比較的均質な膜領域を、表示領域として
使用するため、結果として、発光輝度の分布の広がりを
極めて小さくすることができる。Further, the peripheral portion of the film formation region where the film thickness varies greatly is removed, and the relatively uniform film region inside the film formation region is used as the display region. As a result, the spread of the emission luminance distribution must be made extremely small. You can
＜実施例＞ 以下、この発明の薄膜ELパネルの製造方法を図示の実施
例により詳細に説明する。<Examples> Hereinafter, a method for manufacturing a thin film EL panel according to the present invention will be described in detail with reference to illustrated examples.
まず、第１図（ａ）に示すように、ガラス基板１の
表面に、ITOから成り膜厚1000〜2000Åの透明導電膜を
形成し、フォトエッチングによって平行な帯状の透明電
極２を形成する。First, as shown in FIG. 1 (a), a transparent conductive film made of ITO and having a film thickness of 1000 to 2000Å is formed on the surface of a glass substrate 1, and parallel strip-shaped transparent electrodes 2 are formed by photoetching.
次に、第２図（ａ）に示すように、この基板１を表
面を下向きにして基板ホルダー20に取り付け、マスク21
を取り付けずに、そのまま上記基板１を所定温度に加熱
する。この状態で、スパッタ法または電子ビーム蒸着法
等の手法によりSi3N4等から成る下部絶縁層３を基板の
略全面に約2000Å程度形成する。続いて、同様の手法に
よって、ZnS:Mnから成り膜厚8000Å程度の発光層４と、
Si3N4等から成り膜厚2000Å程度の上部絶縁層５を基板
の略全面に重層形成する（第１図（ｂ））。Next, as shown in FIG. 2 (a), the substrate 1 is attached to the substrate holder 20 with the surface thereof facing downward, and the mask 21
The substrate 1 is heated as it is to a predetermined temperature without attaching. In this state, the lower insulating layer 3 made of Si 3 N 4 or the like is formed on the substantially entire surface of the substrate by about 2000 Å by a method such as a sputtering method or an electron beam evaporation method. Then, by the same method, a light emitting layer 4 made of ZnS: Mn and having a film thickness of about 8000Å,
An upper insulating layer 5 made of Si 3 N 4 or the like and having a film thickness of about 2000 Å is formed over the substantially entire surface of the substrate (FIG. 1B).
次に、第１図（ｃ）に示すように、上記重層形成さ
れた三層膜3,4,5のうちパネルの表示領域D1となる領域
を、ゴム製のマスク31で保護して、周辺領域△の不要な
部分を乾式ブラスト法や液体ホーニング法のような研磨
剤を高圧で吹き付ける方法あるいは研磨法などの機械的
手法によって膜を完全に除去する。すると、透明電極２
の端部2aは、第１図（ｄ）に示すように、上記三層膜3,
4,5から露出した状態となる。Next, as shown in FIG. 1 (c), a region of the three-layered films 3, 4, 5 having the above-mentioned multi-layered structure, which will be the display region D 1 of the panel, is protected by a rubber mask 31, The unnecessary portion of the peripheral region Δ is completely removed by a mechanical method such as a dry blasting method or a liquid honing method in which an abrasive is sprayed at high pressure, or a polishing method. Then, the transparent electrode 2
The end portion 2a of the three-layered film 3, as shown in FIG.
It is exposed from 4,5.
なお、上記三層膜を除去するために液体ホーニング法を
用いる場合、アランダム（商品名）等で＃400〜＃1000
程度の硬くてしかも比較的粒径の細かい研磨剤を用いる
ことによって、１辺当り20sec程度で簡単に完全除去す
ることができる。When using the liquid honing method to remove the above three-layer film, use # 400 to # 1000 with Alundum (trade name) or the like.
By using a polishing agent that is hard and has a relatively small particle size, it is possible to easily and completely remove it in about 20 seconds per side.
最後に、第１図（ｅ）に示すように、電子ビーム蒸
着法によって金属膜を形成し、フォトエッチングして、
帯状の背面電極６および端子電極７を形成する。このと
き、端子電極７は、三層膜3,4,5から露出した上記透明
電極２の端部2aと導通する状態になる。Finally, as shown in FIG. 1 (e), a metal film is formed by the electron beam evaporation method and photoetched,
The strip-shaped back electrode 6 and the terminal electrode 7 are formed. At this time, the terminal electrode 7 is in a state of being electrically connected to the end portion 2a of the transparent electrode 2 exposed from the three-layer film 3, 4, 5.
このような製法によって、比較的簡単な手法で、基板１
の略全面に形成した三層膜3,4,5の不要部分を除去し
て、三層膜3,4,5から露出した透明電極２の端部2aに導
通する端子電極７を形成することができる。また、この
ように薄膜ELパネルを製造する際、上記工程におい
て、マスク21を取り付けないでそのまま基板１を加熱し
ているため、マスク21を使用する場合に比して、第２図
（ｂ）に示すように基板１の面内の温度差が小さくなっ
ている。そのため、この状態で、三層膜を基板１上に略
全面に形成する場合、第２図（ｃ）に示すように膜形成
領域E1の周辺にて膜厚が厚く中心付近にて薄い傾向に変
わりはないが、膜厚バラツキが小さくなる。さらに、上
記工程にて、所定の表示領域D1以外の周辺領域△の三
層膜を除去しているので、第２図（ｄ）に示すように、
輝度差はいっそう小さくなる（輝度差B1）。したがっ
て、薄膜ELパネルの表示品位を向上させることができ
る。With such a manufacturing method, the substrate 1 can be relatively easily manufactured.
Unnecessary portions of the three-layered films 3, 4, 5 formed on substantially the entire surface of the above are removed to form the terminal electrodes 7 which are electrically connected to the end portions 2a of the transparent electrodes 2 exposed from the three-layered films 3, 4, 5. You can Further, when manufacturing the thin film EL panel as described above, since the substrate 1 is heated as it is without attaching the mask 21 in the above process, as compared with the case of using the mask 21, FIG. As shown in, the temperature difference in the plane of the substrate 1 is small. Therefore, in this state, when the three-layer film is formed on substantially the entire surface of the substrate 1, the film thickness tends to be thick around the film formation region E 1 and thin near the center as shown in FIG. 2 (c). However, the variation in film thickness is reduced. Further, since the three-layer film of the peripheral region Δ other than the predetermined display region D 1 is removed in the above process, as shown in FIG.
The brightness difference becomes even smaller (brightness difference B 1 ). Therefore, the display quality of the thin film EL panel can be improved.
なお、この実施例は、膜除去の手法として液体ホーニン
グ法について主に説明したが、これに限られるものでは
なく、乾式ブラスト法あるいは基板を直接研磨する方法
等、他の機械的、物理的な手法いわゆる研磨削によって
膜を除去しても良い。また、絶縁層、発光層は他の元素
や材料を用いたものであっても良い。In this embodiment, the liquid honing method was mainly described as the film removing method, but the method is not limited to this, and other mechanical or physical methods such as a dry blast method or a method of directly polishing the substrate are used. Method The film may be removed by so-called polishing. Further, the insulating layer and the light emitting layer may use other elements or materials.
＜効果＞ 以上より明らかなように、この発明は、ガラス基板上に
透明電極と下部絶縁層と発光層と上部絶縁層と背面電極
を順次積層して形成する薄膜ELパネルの製造方法におい
て、 上記基板上の略全面に下部絶縁層、発光層、上部絶縁層
の三層を形成した後、パネルの表示領域をマスクし、上
記表示領域以外の周辺領域の上記下部絶縁層、発光層、
上部絶縁層を機械的研削手法で除去して、透明電極の端
部を露出させて、この端部に導通する端子電極を設ける
ようにしているので、表示領域内にて輝度差を抑えて薄
膜ELパネルの表示品位を向上させることができる。<Effect> As is apparent from the above, the present invention provides a method for manufacturing a thin film EL panel, which comprises sequentially forming a transparent electrode, a lower insulating layer, a light emitting layer, an upper insulating layer, and a back electrode on a glass substrate. After forming three layers of a lower insulating layer, a light emitting layer, and an upper insulating layer on substantially the entire surface of the substrate, the display area of the panel is masked, and the lower insulating layer, the light emitting layer in the peripheral area other than the display area,
The upper insulating layer is removed by a mechanical grinding method to expose the end of the transparent electrode and to provide a terminal electrode that conducts at this end, so that the brightness difference is suppressed in the display area and the thin film is formed. The display quality of the EL panel can be improved.
さらに、下部絶縁層、発光層、上部絶縁層の形成時、表
示領域の外側に膜が付かない様に覆うマスクが不要とな
る為、基板ホルダーの形状が簡単になり軽量化、共通化
が図れ、生産効率の向上にも役立つ。Further, when forming the lower insulating layer, the light emitting layer, and the upper insulating layer, a mask for covering the outside of the display area so as to prevent the film from being attached is not required. It also helps improve production efficiency.
また、１のガラス基板から複数枚の薄膜ELパネルを作製
するいわゆる多数枚取りを行なう場合に、複数個の開口
部を持った様な複雑な形態のマスクを用いて膜形成しな
くても、この発明を適用して、すなわち基板全面に膜形
成し、端子部として使用する部分の膜を除去し、露出し
た透明電極の端部と端子電極との導通をとることによっ
て容易に行うことができる。Further, in the case of performing so-called multi-cavity production of a plurality of thin film EL panels from one glass substrate, it is possible to form a film without using a mask having a complicated shape such as a plurality of openings. By applying the present invention, that is, by forming a film on the entire surface of the substrate, removing the film of the portion used as the terminal portion, and establishing electrical continuity between the exposed end portion of the transparent electrode and the terminal electrode, it can be easily performed. .
第１図（ａ）乃至（ｅ）はこの発明の薄膜ELパネルの製
造方法の工程を示す図、第２図（ａ）はこの発明におけ
る三層膜形成時の基板取り付け状態を示す図、第２図
（ｂ）は上記基板の温度分布を示す図、第２図（ｃ）は
上記三層膜の膜厚分布を示す図、第２図（ｄ）はこの発
明により製造した薄膜ELパネルの発光輝度の分布を示す
図、第３図（ａ）は従来の製造方法における三層膜形成
時の基板取り付け状態を示す図、第３図（ｂ）は上記基
板の温度分布を示す図、第３図（ｃ）は上記三層膜の膜
厚分布を示す図、第３図（ｄ）は上記従来の製造方法に
より製造した薄膜ELパネルの発光輝度の分布を示す図、
第４図（ａ）乃至（ｃ）は従来の薄膜ELパネルの製造方
法の工程を示す図である。 1,11……ガラス基板、7,17……端子電極、 2,12……透明電極、20……基板ホルダー、 3,13……下部絶縁層、21……マスク、 4,14……発光層、31……ゴムマスク、 5,15……上部絶縁層、32……研磨材、 6,16……背面電極、33……研磨材噴射ガン。1 (a) to 1 (e) are views showing steps of a method for manufacturing a thin film EL panel of the present invention, and FIG. 2 (a) is a view showing a substrate mounting state at the time of forming a three-layer film in the present invention. 2 (b) is a diagram showing the temperature distribution of the substrate, FIG. 2 (c) is a diagram showing the film thickness distribution of the three-layer film, and FIG. 2 (d) is a thin film EL panel manufactured by the present invention. FIG. 3 (a) is a diagram showing a distribution of light emission luminance, FIG. 3 (a) is a diagram showing a substrate mounting state when a three-layer film is formed by a conventional manufacturing method, and FIG. 3 (b) is a diagram showing a temperature distribution of the substrate. FIG. 3 (c) is a diagram showing the film thickness distribution of the three-layer film, FIG. 3 (d) is a diagram showing the light emission luminance distribution of the thin film EL panel manufactured by the conventional manufacturing method,
FIGS. 4 (a) to 4 (c) are diagrams showing steps of a conventional method for manufacturing a thin film EL panel. 1,11 …… Glass substrate, 7,17 …… Terminal electrode, 2,12 …… Transparent electrode, 20 …… Substrate holder, 3,13 …… Lower insulating layer, 21 …… Mask, 4,14 …… Light emission Layer, 31 …… Rubber mask, 5,15 …… Upper insulating layer, 32 …… Abrasive material, 6,16 …… Rear electrode, 33 …… Abrasive material injection gun.
フロントページの続き (72)発明者 上出 久 大阪府大阪市阿倍野区長池町22番22号 シ ヤープ株式会社内 (56)参考文献 実開 平２−22598（ＪＰ，Ｕ)Continuation of the front page (72) Hisashi Kamedue 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Prefecture Sharp Corporation (56) References: Kaikaihei 2-22598 (JP, U)
Claims (1)
光層と上部絶縁層と背面電極を順次積層して形成する薄
膜ELパネルの製造方法において、 上記基板上の略全面に下部絶縁層、発光層、上部絶縁層
の三層を形成した後、パネルの表示領域をマスクし、上
記表示領域以外の周辺領域の上記下部絶縁層、発光層、
上部絶縁層を機械的研削手法で除去して、透明電極の端
部を露出させて、この端部に導通する端子電極を設ける
ことを特徴とする薄膜ELパネルの製造方法。1. A method for manufacturing a thin film EL panel, which comprises sequentially forming a transparent electrode, a lower insulating layer, a light emitting layer, an upper insulating layer and a back electrode on a glass substrate, wherein the lower insulating layer is formed on substantially the entire surface of the substrate. After forming three layers of a light emitting layer and an upper insulating layer, the display area of the panel is masked, and the lower insulating layer, the light emitting layer in the peripheral area other than the display area,
A method for manufacturing a thin film EL panel, characterized in that the upper insulating layer is removed by a mechanical grinding method to expose an end portion of the transparent electrode, and a terminal electrode that conducts is provided at the end portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158030A JPH0679512B2 (en) | 1989-06-20 | 1989-06-20 | Method for manufacturing thin film EL panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158030A JPH0679512B2 (en) | 1989-06-20 | 1989-06-20 | Method for manufacturing thin film EL panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0322390A JPH0322390A (en) | 1991-01-30 |
| JPH0679512B2 true JPH0679512B2 (en) | 1994-10-05 |
Family
ID=15662740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1158030A Expired - Lifetime JPH0679512B2 (en) | 1989-06-20 | 1989-06-20 | Method for manufacturing thin film EL panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679512B2 (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04337283A (en) * | 1991-05-14 | 1992-11-25 | Sharp Corp | Manufacture of thin film el element |
| US6197209B1 (en) | 1995-10-27 | 2001-03-06 | Lg. Philips Lcd Co., Ltd. | Method of fabricating a substrate |
| KR100265556B1 (en) | 1997-03-21 | 2000-11-01 | 구본준 | Etching Device |
| US6327011B2 (en) | 1997-10-20 | 2001-12-04 | Lg Electronics, Inc. | Liquid crystal display device having thin glass substrate on which protective layer formed and method of making the same |
| KR100272513B1 (en) | 1998-09-08 | 2001-01-15 | 구본준 | Etching Device of Glass Substrate |
| KR100308157B1 (en) | 1998-10-22 | 2001-11-15 | 구본준, 론 위라하디락사 | Glass substrate for liquid crystal display device |
| KR100552798B1 (en) | 2000-11-30 | 2006-02-20 | 엘지.필립스 엘시디 주식회사 | seal pattern for liquid crystal display device and forming method thereof |
| KR100685918B1 (en) | 2000-12-27 | 2007-02-22 | 엘지.필립스 엘시디 주식회사 | Etching Device for Glass Substrate and method for etching the Glass Substrate using the same |
| KR100652041B1 (en) | 2000-12-29 | 2006-11-30 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display Device and Method for Manufacturing the same |
| KR100595302B1 (en) | 2000-12-30 | 2006-07-03 | 엘지.필립스 엘시디 주식회사 | device for etching glass substrate in fabrication of LCD |
| US8512580B2 (en) | 2001-09-21 | 2013-08-20 | Lg Display Co., Ltd. | Method of fabricating thin liquid crystal display device |
| KR100595303B1 (en) | 2001-09-25 | 2006-07-03 | 엘지.필립스 엘시디 주식회사 | Bubble plate for etching, and etching apparatus using the same |
| KR100771949B1 (en) | 2001-11-07 | 2007-10-31 | 엘지.필립스 엘시디 주식회사 | Seal Pattern for Ultra-Thin type Liquid Crystal Display Device |
| KR100809938B1 (en) | 2001-12-06 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | manufacturing method of a liquid crystal display device |
| KR100672633B1 (en) | 2001-12-18 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | Method For Fabricating Liquid Crystal Display Device |
| KR100672634B1 (en) | 2001-12-19 | 2007-02-09 | 엘지.필립스 엘시디 주식회사 | Apparatus For Transferring Glass Substrates Of Liquid Crystal Display Device And The Transferring Method Using the Same |
| KR100606965B1 (en) | 2001-12-29 | 2006-08-01 | 엘지.필립스 엘시디 주식회사 | Etching apparatus |
| KR100843132B1 (en) | 2002-05-23 | 2008-07-02 | 엘지디스플레이 주식회사 | Seal Pattern for Liquid Crystal Display Device |
| KR100710160B1 (en) | 2002-10-07 | 2007-04-20 | 엘지.필립스 엘시디 주식회사 | Cassette for preventing breakage of glass substrate |
| JP4696796B2 (en) * | 2005-09-07 | 2011-06-08 | 株式会社豊田自動織機 | Method for manufacturing organic electroluminescence device |
| JP5271171B2 (en) | 2009-06-26 | 2013-08-21 | 三菱電機株式会社 | Manufacturing method of image display element |
-
1989
- 1989-06-20 JP JP1158030A patent/JPH0679512B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322390A (en) | 1991-01-30 |
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