JPH04337283A - Manufacture of thin film el element - Google Patents
Manufacture of thin film el elementInfo
- Publication number
- JPH04337283A JPH04337283A JP3109043A JP10904391A JPH04337283A JP H04337283 A JPH04337283 A JP H04337283A JP 3109043 A JP3109043 A JP 3109043A JP 10904391 A JP10904391 A JP 10904391A JP H04337283 A JPH04337283 A JP H04337283A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- insulating layer
- substrate
- upper insulating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 238000005422 blasting Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 238000003754 machining Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 3
- 238000005406 washing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、発光層の上下に絶縁
層を設けたいわゆる三層構造を有する薄膜ＥＬ（エレク
トロルミネッセンス）素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film EL (electroluminescence) device having a so-called three-layer structure in which insulating layers are provided above and below a light emitting layer.
【０００２】0002
【従来の技術】従来、この種の薄膜ＥＬ素子を製造する
場合、画像表示を行う領域（以下「表示領域」という。
）周辺のＥＬ薄膜の膜厚均一性を改善するために、次の
ような方法が採用されている（特開平３−２２３９０号
公報）。[Prior Art] Conventionally, when manufacturing this type of thin film EL device, the following steps were taken to improve the film thickness uniformity of the EL thin film around the area where an image is displayed (hereinafter referred to as the "display area"). A method has been adopted (Japanese Unexamined Patent Publication No. 3-22390).
【０００３】まず、図２（ａ）に示すように、ガラス基
板１の表面に、ＩＴＯ（錫添加酸化インジウム）からな
る帯状の透明電極２を形成する。続いて、スパッタ法ま
たは電子ビーム蒸着法等の手法により、基板１の略全面
に、ＳｉＯ２膜（膜厚１００〜８００Å）３ａおよびＳ
ｉ３Ｎ４膜３ｂから成る下部絶縁層３と、ＺｎＳ：Ｍｎ
膜（膜厚５０００〜９０００Å）からなる発光層４と、
Ｓｉ３Ｎ４膜５ａおよびＡｌ２Ｏ３膜（膜厚１００〜８
００Å）５ｂからなる上部絶縁層５を積層する。次に、
基板１内の表示領域をゴム製のマスク３１で覆う。そし
て、上記三層３，４，５のうち基板１の周辺領域に存す
る部分（不要部分）を、Ａｌ２Ｏ３を主成分とする研磨
剤（商品名アランダム）３２を用いて液体ホーニングま
たは乾式ブラストなどの噴射加工法によって完全に除去
する（なお、３３は噴射ガンを示している。）。これに
より、図２（ｂ）に示すように、この三層３，４，５の
膜厚均一性の良くない部分を除去し、薄膜ＥＬ素子の表
示品位を向上させるようにしている。最後に、帯状のＡ
ｌからなる背面電極６と、この背面電極６と同一材料の
Ａｌからなり上記透明電極２の端部２ｅに接触する端子
電極７とを同時形成する。First, as shown in FIG. 2(a), a band-shaped transparent electrode 2 made of ITO (tin-doped indium oxide) is formed on the surface of a glass substrate 1. Next, a SiO2 film (thickness 100 to 800 Å) 3a and S
A lower insulating layer 3 made of an i3N4 film 3b and a ZnS:Mn
A light emitting layer 4 made of a film (film thickness 5000 to 9000 Å);
Si3N4 film 5a and Al2O3 film (film thickness 100~8
00 Å) 5b is laminated. next,
A display area within the substrate 1 is covered with a rubber mask 31. Then, the portions (unnecessary portions) of the three layers 3, 4, and 5 that exist in the peripheral area of the substrate 1 are subjected to liquid honing or dry blasting using an abrasive agent (trade name: Alundum) 32 containing Al2O3 as a main component. It is completely removed by the injection processing method (33 indicates an injection gun). As a result, as shown in FIG. 2(b), portions of the three layers 3, 4, and 5 with poor film thickness uniformity are removed, and the display quality of the thin film EL element is improved. Finally, the band-shaped A
A back electrode 6 made of Al and a terminal electrode 7 made of Al, which is the same material as the back electrode 6, and in contact with the end 2e of the transparent electrode 2 are formed at the same time.
【０００４】0004
【発明が解決しようとする課題】ところで、一般に噴射
加工法では、加工対象物に研磨剤を吹き付ける圧力は、
加工力を高めるように３ｋｇ／ｃｍ２程度以上に設定さ
れる。また、上記研磨剤の主成分であるＡｌ２Ｏ３は、
加工対象物の表面粗さをできるだけ小さくできるように
粒径５０μｍ以下のものが使用される。このため、上に
述べた工程で実際に噴射加工を行うとき、周辺領域に吹
き付けた研磨剤（Ａｌ２Ｏ３）がマスク３１の裏側に侵
入して、上部絶縁層５の表面すなわちＡｌ２Ｏ３膜５ｂ
の表面に付着する（マスク３１の裏側に侵入した研磨剤
（Ａｌ２Ｏ３）は、膜を研削するための運動エネルギを
既に失っているにもかかわらず、上記Ａｌ２Ｏ３膜５ｂ
の表面に強固に付着する。）。このため、素子の表示品
位が低下するという問題がある。[Problems to be Solved by the Invention] Generally speaking, in the jet machining method, the pressure at which the abrasive is sprayed onto the workpiece is
It is set to about 3 kg/cm2 or more to increase the processing force. In addition, Al2O3, which is the main component of the polishing agent, is
In order to minimize the surface roughness of the workpiece, particles with a particle size of 50 μm or less are used. Therefore, when actually performing the jetting process in the above-mentioned process, the abrasive (Al2O3) sprayed on the peripheral area enters the back side of the mask 31, and the surface of the upper insulating layer 5, that is, the Al2O3 film 5b.
Although the abrasive (Al2O3) adhering to the surface of the mask 31 (which has entered the back side of the mask 31) has already lost the kinetic energy for grinding the film, the Al2O3 film 5b
Adheres firmly to the surface. ). Therefore, there is a problem in that the display quality of the device is degraded.
【０００５】上記研磨剤を除去する手段としては、水や
界面活性剤を用いて超音波洗浄したり、ブラシを用いて
機械的に洗浄する手段が知られている。しかしながら、
上記Ａｌ２Ｏ３膜５ｂに付着した研磨剤（Ａｌ２Ｏ３）
は、強固に付着しているため、水による超音波洗浄では
完全には除去することができない。また、界面活性剤を
用いて洗浄した場合は上部絶縁層１５の膜質が劣化し、
ブラシを用いて洗浄した場合は膜面が傷ついたり剥がれ
たりする。いずれの場合も発光のムラを生じさせ、表示
品位を更に低下させる。極端な場合は素子不良となる。Known methods for removing the abrasive include ultrasonic cleaning using water or a surfactant, and mechanical cleaning using a brush. however,
Abrasive agent (Al2O3) attached to the Al2O3 film 5b
is firmly attached and cannot be completely removed by ultrasonic cleaning with water. In addition, when cleaning with a surfactant, the film quality of the upper insulating layer 15 deteriorates,
When cleaning with a brush, the membrane surface may be damaged or peeled off. In either case, uneven light emission occurs, further degrading display quality. In extreme cases, the element may become defective.
【０００６】そこで、この発明の目的は、上部絶縁層の
表面に付着した研磨剤を上部絶縁層の膜質を損なうこと
なく除去でき、したがって素子の表示品位を高めること
ができる薄膜ＥＬ素子の製造方法を提供することにある
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a thin-film EL device that can remove abrasives adhering to the surface of an upper insulating layer without damaging the film quality of the upper insulating layer, thereby improving the display quality of the device. Our goal is to provide the following.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
、この発明の薄膜ＥＬ素子の製造方法は、基板上に透明
電極を形成し、さらに上記基板の略全面に下部絶縁層、
発光層、上部絶縁層の三層を堆積した後、上記三層のう
ち基板の周辺領域に存する部分を研磨剤を用いて噴射加
工して除去し、続いて、上記上部絶縁層上に背面電極を
形成する薄膜ＥＬ素子の製造方法において、上記上部絶
縁層の表面の組成と上記研磨剤の主成分の組成とが異な
ることを特徴としている。[Means for Solving the Problems] In order to achieve the above object, the method for manufacturing a thin film EL device of the present invention includes forming a transparent electrode on a substrate, and further including a lower insulating layer on substantially the entire surface of the substrate.
After depositing the three layers of the light emitting layer and the upper insulating layer, the portion of the three layers located in the peripheral area of the substrate is removed by spraying using an abrasive, and then a back electrode is deposited on the upper insulating layer. The method for manufacturing a thin film EL device is characterized in that the composition of the surface of the upper insulating layer and the composition of the main component of the abrasive are different.
【０００８】[0008]
【作用】上部絶縁層の表面の組成と研磨剤の主成分の組
成とが同一の場合（従来）は、上部絶縁層の表面に研磨
剤が単に接触しただけでも、両者の間の分子間力が大き
く、強固な結合力が生じる。これに対して本発明の如く
、上部絶縁層の表面の組成と研磨剤の主成分の組成とが
異なる場合は、両者の間の分子間力が小さくなって結合
力が弱まる。したがって、噴射加工を行うことによって
上記上部絶縁層の表面に一旦研磨剤が付着したとしても
、水による超音波洗浄によって上記研磨剤は簡単に除去
される。したがって、上部絶縁層の膜質が損なわれるこ
とがなくなり、素子の表示品位が向上する。[Function] When the composition of the surface of the upper insulating layer and the composition of the main component of the abrasive are the same (conventional), even if the abrasive merely comes into contact with the surface of the upper insulating layer, the intermolecular force between the two is large, resulting in strong bonding force. On the other hand, as in the present invention, when the composition of the surface of the upper insulating layer and the composition of the main component of the abrasive are different, the intermolecular force between the two becomes small and the bonding force is weakened. Therefore, even if the abrasive once adheres to the surface of the upper insulating layer by performing the jetting process, the abrasive can be easily removed by ultrasonic cleaning with water. Therefore, the film quality of the upper insulating layer is not impaired, and the display quality of the device is improved.
【０００９】[0009]
【実施例】以下、この発明の薄膜ＥＬ素子の製造方法を
実施例により詳細に説明する。EXAMPLES The method for manufacturing a thin film EL device according to the present invention will be explained in detail below using examples.
【００１０】まず、図１（ａ）に示すように、ガラス基
板１の表面に、ＳｎＯ２またはＩＴＯ（錫添加酸化イン
ジウム）からなる帯状の透明電極２を形成する。続いて
、スパッタ法または電子ビーム蒸着法等の手法により、
基板１の略全面に、下部絶縁層３，発光層４，上部絶縁
層１５の三層を形成する。従来と同様に、下部絶縁層３
はＳｉＯ２膜（膜厚１００〜８００Å）３ａおよびＳｉ
３Ｎ４膜３ｂからなり、また、発光層４はＭｎ濃度０．
３〜０．５ｗｔ％のＺｎＳ：Ｍｎ膜（膜厚５０００〜９
０００Å）からなる。一方、上部絶縁層１５はＳｉ３Ｎ
４膜５ａおよびＳｉＯ２膜（膜厚１００〜８００Å）１
５ｂからなる。次に、基板１内の表示領域をゴム製のマ
スク３１で覆う。そして、上記三層３，４，１５のうち
基板１の周辺領域に存する部分（不要部分）を、粒径５
０μｍ以下のＡｌ２Ｏ３を主成分とする研磨剤（商品名
；アランダム＃４００〜＃１０００）３２を用いて、液
体ホーニングまたは乾式ブラストなどの噴射加工法によ
って完全に除去する。このとき、研磨剤３２を噴射ガン
３３から基板１へ吹き付ける圧力は３〜５ｋｇ／ｃｍ２
に設定する。これにより、図１（ｂ）に示すように、こ
の三層３，４，１５の膜厚均一性の良くない部分を除去
する（１辺当り２０ｓｅｃ程度で簡単に完全除去するこ
とができる。）。このとき、上記周辺領域に吹き付けた
研磨剤（Ａｌ２Ｏ３）がマスク３１の裏側に侵入して、
上部絶縁層１５の表面すなわちＳｉＯ２膜１５ｂの表面
に付着する。しかし、ＳｉＯ２膜１５ｂと研磨剤の主成
分Ａｌ２Ｏ３とは、組成が異なっているため、両者の間
の分子間力は比較的小さく結合力が弱いものである。し
たがって、水による超音波洗浄を１０分間程度施すこと
によって、上部絶縁層１５の膜質を損なうことなく、上
記研磨剤（Ａｌ２Ｏ３）を完全に除去することができる
。水による超音波洗浄によってＳｉＯ２膜１５ｂの表面
から研磨剤（Ａｌ２Ｏ３）を除去した後、最後に、帯状
のＡｌからなる背面電極６と、この背面電極６と同一材
料のＡｌからなり上記透明電極２の端部２ｅに接触する
端子電極７とを同時形成する。First, as shown in FIG. 1(a), a band-shaped transparent electrode 2 made of SnO2 or ITO (tin-doped indium oxide) is formed on the surface of a glass substrate 1. Next, using a method such as sputtering or electron beam evaporation,
Three layers, a lower insulating layer 3, a light emitting layer 4, and an upper insulating layer 15, are formed on substantially the entire surface of the substrate 1. As before, the lower insulating layer 3
is SiO2 film (thickness 100-800 Å) 3a and Si
3N4 film 3b, and the light emitting layer 4 has an Mn concentration of 0.3N4.
3 to 0.5 wt% ZnS:Mn film (thickness 5000 to 9
000 Å). On the other hand, the upper insulating layer 15 is made of Si3N
4 film 5a and SiO2 film (film thickness 100-800 Å) 1
Consisting of 5b. Next, the display area within the substrate 1 is covered with a rubber mask 31. Then, out of the three layers 3, 4, and 15, a portion (unnecessary portion) existing in the peripheral area of the substrate 1 is removed with a grain size of 5
It is completely removed by a jetting method such as liquid honing or dry blasting using an abrasive (trade name: Alundum #400 to #1000) 32 whose main component is Al2O3 with a diameter of 0 μm or less. At this time, the pressure at which the abrasive 32 is sprayed from the spray gun 33 onto the substrate 1 is 3 to 5 kg/cm2.
Set to . As a result, as shown in FIG. 1(b), the portions of the three layers 3, 4, and 15 with poor film thickness uniformity are removed (they can be easily and completely removed in about 20 seconds per side). . At this time, the abrasive (Al2O3) sprayed on the peripheral area enters the back side of the mask 31,
It adheres to the surface of the upper insulating layer 15, that is, the surface of the SiO2 film 15b. However, since the SiO2 film 15b and Al2O3, the main component of the polishing agent, have different compositions, the intermolecular force between them is relatively small and the bonding force between them is weak. Therefore, by performing ultrasonic cleaning with water for about 10 minutes, the abrasive (Al2O3) can be completely removed without damaging the film quality of the upper insulating layer 15. After removing the abrasive (Al2O3) from the surface of the SiO2 film 15b by ultrasonic cleaning with water, finally, the back electrode 6 made of band-shaped Al and the transparent electrode 2 made of the same material as the back electrode 6 are formed. A terminal electrode 7 that contacts the end portion 2e of the terminal electrode 7 is formed at the same time.
【００１１】なお、この実施例は上部絶縁層１５の表面
側をＳｉＯ２膜１５ｂ，研磨剤の主成分をＡｌ２Ｏ３と
したが、両者の組成が異なれば良く、この組み合わせに
限られるものではない。例えば、研磨剤の主成分がＡｌ
２Ｏ３のものを用いるときは、上部絶縁層の表面側をＴ
ｉＯ２膜などＡｌ２Ｏ３膜以外の絶縁膜で構成すれば良
い。また、研磨剤の主成分がＳｉＯ２のものを用いると
きは、上部絶縁層の表面側をＡｌ２Ｏ３膜，ＴｉＯ２膜
などＳｉＯ２以外の絶縁膜で構成すれば良い。[0011] In this embodiment, the surface side of the upper insulating layer 15 is formed of the SiO2 film 15b, and the main component of the polishing agent is Al2O3, but the combination is not limited to this, as long as the compositions of the two are different. For example, the main component of the polishing agent is Al.
When using 2O3, the surface side of the upper insulating layer is T
It may be formed of an insulating film other than the Al2O3 film, such as an iO2 film. Further, when using a polishing agent whose main component is SiO2, the surface side of the upper insulating layer may be formed of an insulating film other than SiO2, such as an Al2O3 film or a TiO2 film.
【００１２】また、下部絶縁層３，発光層５および上部
絶縁層１５の発光層５側（表面以外の部分）の組成は、
当然ながら、この実施例と異なるものであっても良い。The composition of the lower insulating layer 3, the light emitting layer 5 and the upper insulating layer 15 on the light emitting layer 5 side (other than the surface) is as follows:
Naturally, it may be different from this embodiment.
【００１３】[0013]
【発明の効果】以上より明らかなように、この発明の薄
膜ＥＬ素子の製造方法は、基板上に形成した下部絶縁層
，発光層および上部絶縁層のうち周辺領域に存する部分
を噴射加工して除去するときに、上部絶縁層の表面の組
成と研磨剤の主成分の組成とを異なるものとしているの
で、上記上部絶縁層の表面に付着した研磨剤を上部絶縁
層の膜質を損なうことなく除去でき、したがって素子の
表示品位を高めることができる。[Effects of the Invention] As is clear from the above, the method for manufacturing a thin film EL device of the present invention involves spraying the portions of the lower insulating layer, the light emitting layer, and the upper insulating layer formed on the substrate that exist in the peripheral region. When removing the upper insulating layer, the composition of the surface of the upper insulating layer and the composition of the main component of the abrasive are different, so the abrasive attached to the surface of the upper insulating layer can be removed without damaging the film quality of the upper insulating layer. Therefore, the display quality of the device can be improved.
【図１】 この発明の一実施例の薄膜ＥＬ素子の製造
方法を説明する工程図である。FIG. 1 is a process diagram illustrating a method for manufacturing a thin film EL device according to an embodiment of the present invention.
【図２】 従来の薄膜ＥＬ素子の製造方法を説明する
工程図である。FIG. 2 is a process diagram illustrating a conventional method for manufacturing a thin film EL element.
１ ガラス基板 ２ 透明電極 ３ 下部絶縁層 ３ａ，１５ｂ ＳｉＯ２膜 ３ａ，１５ａ Ｓｉ３Ｎ４膜 ４ 発光層 ６ 背面電極 ７ 端子電極 １５ 上部絶縁層 ３１ ゴムマスク ３２ 研磨剤 ３３ 噴射ガン 1 Glass substrate 2 Transparent electrode 3 Lower insulating layer 3a, 15b SiO2 film 3a, 15a Si3N4 film 4 Luminescent layer 6 Back electrode 7 Terminal electrode 15 Upper insulating layer 31 Rubber mask 32 Abrasive 33 Injection gun
Claims (1)
記基板の略全面に下部絶縁層、発光層、上部絶縁層の三
層を堆積した後、上記三層のうち基板の周辺領域に存す
る部分を研磨剤を用いて噴射加工して除去し、続いて、
上記上部絶縁層上に背面電極を形成する薄膜ＥＬ素子の
製造方法において、上記上部絶縁層の表面の組成と上記
研磨剤の主成分の組成とが異なることを特徴とする薄膜
ＥＬ素子の製造方法。1. After forming a transparent electrode on a substrate and depositing three layers, a lower insulating layer, a light-emitting layer, and an upper insulating layer, on substantially the entire surface of the substrate, only one of the three layers is present in the peripheral area of the substrate. The part is removed by blasting with an abrasive, and then
A method for manufacturing a thin film EL device in which a back electrode is formed on the upper insulating layer, wherein the composition of the surface of the upper insulating layer and the composition of the main component of the abrasive are different. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3109043A JPH04337283A (en) | 1991-05-14 | 1991-05-14 | Manufacture of thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3109043A JPH04337283A (en) | 1991-05-14 | 1991-05-14 | Manufacture of thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04337283A true JPH04337283A (en) | 1992-11-25 |
Family
ID=14500162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3109043A Pending JPH04337283A (en) | 1991-05-14 | 1991-05-14 | Manufacture of thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04337283A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013235978A (en) * | 2012-05-09 | 2013-11-21 | Panasonic Corp | Method of producing thin film, method of manufacturing display panel, and method of manufacturing tft substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322390A (en) * | 1989-06-20 | 1991-01-30 | Sharp Corp | Manufacture of thin film el panel |
-
1991
- 1991-05-14 JP JP3109043A patent/JPH04337283A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322390A (en) * | 1989-06-20 | 1991-01-30 | Sharp Corp | Manufacture of thin film el panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013235978A (en) * | 2012-05-09 | 2013-11-21 | Panasonic Corp | Method of producing thin film, method of manufacturing display panel, and method of manufacturing tft substrate |
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