JPH056319B2 - - Google Patents
Info
- Publication number
- JPH056319B2 JPH056319B2 JP58175188A JP17518883A JPH056319B2 JP H056319 B2 JPH056319 B2 JP H056319B2 JP 58175188 A JP58175188 A JP 58175188A JP 17518883 A JP17518883 A JP 17518883A JP H056319 B2 JPH056319 B2 JP H056319B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- electrodes
- transparent conductive
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、絶縁膜の形成方法に関し、特に透明
導電膜が形成された基板上に、透明導電膜を被う
ようにスパツタリングで絶縁膜を形成する方法に
関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for forming an insulating film, and in particular to a method for forming an insulating film on a substrate on which a transparent conductive film is formed, by sputtering to cover the transparent conductive film. It relates to a method of forming.
（従来例の構成とその問題点）
例えば薄膜EL表示素子は、ストライプ状の透
明電極群が形成されたガラス板上に第１の絶縁膜
を介してEL（Electro Luminescence）発光層を
形成し、さらにその上に第２の絶縁膜を形成し、
その上に上記透明電極群と直交するようにストラ
イプ状の背面電極群を設けた構成になつている。
すなわち透明電極群はすくなくとも端部の電極取
出し部を除いて絶縁膜で被われている。(Structure of conventional example and its problems) For example, in a thin film EL display element, an EL (Electro Luminescence) light emitting layer is formed on a glass plate on which a group of striped transparent electrodes is formed, with a first insulating film interposed therebetween. Furthermore, a second insulating film is formed thereon,
A striped back electrode group is provided thereon so as to be perpendicular to the transparent electrode group.
That is, the transparent electrode group is covered with an insulating film except for at least the electrode lead-out portions at the ends.
上記絶縁膜は従来から高周波スパツタリング法
で作製される。第１図に示すようにベルジヤー１
内に対向させて設置されたカソード電極２及びア
ノード電極３を有するスパツタリング装置が用い
られる。絶縁膜が被着される基板４はアノード電
極３上に、被着面をカソード電極２に向けて搭載
され、両電極２，３間に所定の高周波電源を印加
しカソード電極２上に搭載された絶縁物からなる
ターゲツト５から、アルゴンイオン等によつて絶
縁物分子がたたき出され、基板４に付着して絶縁
膜が形成される。基板４を、第２図を用いてさら
に詳しく説明すると、たとえばガラス基板６上に
透明電極７が形成されており、電極取出しのため
に透明電極７の端部をメタルマスク８で被い、そ
の上にスパツタリングにより絶縁膜９が形成され
る。 The above-mentioned insulating film is conventionally manufactured by a high frequency sputtering method. Belgear 1 as shown in Figure 1
A sputtering device is used which has a cathode electrode 2 and an anode electrode 3 disposed facing each other. The substrate 4 on which the insulating film is deposited is mounted on the anode electrode 3 with the surface to be deposited facing the cathode electrode 2, and a predetermined high frequency power is applied between both electrodes 2 and 3, and the substrate 4 is mounted on the cathode electrode 2. Insulating molecules are knocked out from the target 5 made of the insulating material by argon ions and the like, and adhere to the substrate 4 to form an insulating film. To explain the substrate 4 in more detail using FIG. 2, for example, a transparent electrode 7 is formed on a glass substrate 6, and the end of the transparent electrode 7 is covered with a metal mask 8 to take out the electrode. An insulating film 9 is formed thereon by sputtering.
ところで第１図のような構造のスパツタリング
装置で、第２図のようにメタルマスクを用いて絶
縁物のスパツタリングを行ない、透明電極を被う
ように絶縁膜を形成すると、スパツタリング工程
中に透明電極の還元現象がしばしば発生する。た
とえば透明電極として酸化インジウムすず（以下
I.T.Oと略す）膜が厚さ1000Åで形成されている
ものに、ステンレスのメタルマスクを用いて次の
ような条件で二酸化ケイ素をスパツタリングする
とI.T.O膜が金属インジウムに還元され、このた
め本来透明であるはずのI.T.O膜が黒く着色した
ように見える。 By the way, when sputtering an insulating material using a metal mask as shown in FIG. 2 and forming an insulating film to cover a transparent electrode using a sputtering apparatus having a structure as shown in FIG. 1, the transparent electrode is removed during the sputtering process. reduction phenomena often occur. For example, indium tin oxide (hereinafter referred to as indium tin oxide) can be used as a transparent electrode.
When silicon dioxide is sputtered onto a film (abbreviated as ITO) with a thickness of 1000 Å using a stainless metal mask under the following conditions, the ITO film is reduced to metallic indium, which makes it originally transparent. The supposed ITO film appears to be colored black.
スパツタリング条件
アルゴン分圧 ５×10-3Torr
投入パワー 4.5W／cm2
ターゲツト 二酸化ケイ素
スパツタモード RFマグネトロン方式
スパツタレート 800Å／min
スパツタ時間 7min
このようなI.T.O膜の還元反応が発生する原因
としては次のようなことが考えられている。すな
わち、スパツタリング工程中にアルゴン陽イオン
などの陽イオン種によりチヤージアツプされたガ
ラス基板の表面と通常アース電位のアノード電極
との間で放電が起り、瞬間的に電子流入が発生す
るからである。これによつて透明電極は部分的に
黒化して透明度を失い、表示素子の透明電極とし
ての機能を果たさなくなる。Sputtering conditions Argon partial pressure 5×10 -3 Torr Input power 4.5W/cm 2 targets Silicon dioxide sputtering mode RF magnetron sputtering rate 800Å/min Sputtering time 7min The causes of such a reduction reaction in the ITO film are as follows. It is being considered. That is, during the sputtering process, a discharge occurs between the surface of the glass substrate, which is charged up by cation species such as argon cations, and the anode electrode, which is normally at ground potential, and an instantaneous inflow of electrons occurs. As a result, the transparent electrode partially turns black and loses its transparency, so that it no longer functions as a transparent electrode of a display element.
（発明の目的）
本発明は、上記従来のスパツタリングによる絶
縁膜の形成方法の欠点を除去し、透明導電膜の黒
化を防止した絶縁膜の形成法を提供するものであ
る。(Objective of the Invention) The present invention provides a method for forming an insulating film that eliminates the drawbacks of the conventional method for forming an insulating film by sputtering and prevents blackening of a transparent conductive film.
（発明の構成）
本発明は、上記の目的を達成するために、以下
のような方法で絶縁膜を形成することを特徴とす
る。透明導電膜からなる複数の電極上に、それら
の電極どうしが電気的に短絡しないようにマスク
をしてスパツタリングにより絶縁膜を形成する。(Structure of the Invention) In order to achieve the above object, the present invention is characterized in that an insulating film is formed by the following method. An insulating film is formed on a plurality of electrodes made of a transparent conductive film by sputtering using a mask so that the electrodes are not electrically short-circuited.
このような条件に適合するマスクキング法とし
ては種々考えられるが、最も容易で安価な方法は
マスク自身の材料として絶縁性材料を用い、絶縁
物のマスクを使用することが考えられる。あるい
は金属などの導電性材料のマスクを用いる場合は
基板とマスクとの間に絶縁物を介在させ、電気的
に絶縁するなどが考えられる。 Various masking methods can be considered that meet these conditions, but the easiest and cheapest method is to use an insulating mask by using an insulating material as the material of the mask itself. Alternatively, if a mask made of a conductive material such as metal is used, an insulator may be interposed between the substrate and the mask to provide electrical insulation.
本発明の主旨を損なわない範囲であればマスク
の形状や材料などは特に制限されるものではな
い。上記のような方法で透明導電膜上にスパツタ
リングによつて絶縁膜を形成すると、そのメカニ
ズムについてはよく分かつていないが、従来問題
があつたように透明導電膜の黒化は全く発生しな
い。 There are no particular restrictions on the shape or material of the mask as long as it does not impair the spirit of the invention. When an insulating film is formed by sputtering on a transparent conductive film using the method described above, although the mechanism is not well understood, the transparent conductive film does not darken at all, which has been a problem in the past.
以下図面を用いて本発明の実施例を詳細に説明
する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
（実施例の説明）
第３図は、本発明にかかる絶縁膜の形成法の一
実施例により製造された薄膜EL素子を示したも
のである。１１は縦220mm、横220mm、厚さ１mmの
透明なガラス基板、１２は絶縁層であり、膜厚
5000Åの二酸化ケイ素からなつている。１３は
ITO膜よりなる幅0.15mm、長さ200mm、厚さ2500
Åの透明平行電極、１４は膜厚5000Åのマンガン
付活硫化亜鉛からなるEL発光層、１５は膜厚
5000Åの酸化イツトリウムからなる発光制御用の
絶縁層、１６は幅0.15mm、長さ220mm、厚さ1000
Åのアルミよりなる背面平行電極であり、透明平
行電極１３とは直交するような配置となつてい
る。透明平行電極１３は電極取出しのため端部が
長さ５mmだけ露出されている。(Description of Examples) FIG. 3 shows a thin film EL device manufactured by an example of the method for forming an insulating film according to the present invention. 11 is a transparent glass substrate with a length of 220 mm, a width of 220 mm, and a thickness of 1 mm; 12 is an insulating layer;
It is made of 5000 Å silicon dioxide. 13 is
Made of ITO film, width 0.15mm, length 200mm, thickness 250mm
14 is an EL light-emitting layer made of manganese-activated zinc sulfide with a film thickness of 5000 Å, 15 is a film thickness
Insulating layer for light emission control made of 5000 Å yttrium oxide, 16 is 0.15 mm wide, 220 mm long, and 1000 Å thick.
These are back parallel electrodes made of aluminum with a thickness of 1.5 Å, and are arranged so as to be orthogonal to the transparent parallel electrodes 13. The ends of the transparent parallel electrodes 13 are exposed for a length of 5 mm to take out the electrodes.
このような薄膜EL素子は以下の手順で製造さ
れる。まず透明なガラス基板１１上にITO膜を電
子ビーム蒸着で被着し、写真蝕刻法を用いて透明
平行電極１３を選択的に形成する。その上に幅10
mm、長さ200mm、厚さ１mmのガラス板を透明平行
電極１３の端部が５mmだけ被われるように設置
し、その上に前述の条件にて高周波スパツタリン
グを用いてSiO2からなる絶縁層１２を形成する。
しかる後に、マンガン付活硫化亜鉛からなるEL
発光層１４、酸化イツトリウムからなる発光制御
用の絶縁層１５を順次電子ビーム蒸着にて積層し
て形成し、その上に写真蝕刻法を用いてアルミニ
ウムからなる背面平行電極１６を形成してなるも
のである。このときITO膜からなる透明平行電極
１３は全く黒化が発生しておらず、表示素子の透
明電極として問題なく機能することが確認され
た。 Such a thin film EL element is manufactured by the following procedure. First, an ITO film is deposited on a transparent glass substrate 11 by electron beam evaporation, and transparent parallel electrodes 13 are selectively formed using photolithography. Width 10 on it
A glass plate with a length of 200 mm and a thickness of 1 mm was placed so that the ends of the transparent parallel electrodes 13 were covered by 5 mm, and an insulating layer 12 made of SiO 2 was placed on top of the glass plate using high-frequency sputtering under the above-mentioned conditions. form.
After that, EL made of manganese-activated zinc sulfide
A light emitting layer 14 and an insulating layer 15 for light emission control made of yttrium oxide are sequentially laminated by electron beam evaporation, and a back parallel electrode 16 made of aluminum is formed thereon by photolithography. It is. At this time, it was confirmed that the transparent parallel electrode 13 made of the ITO film did not blacken at all, and functioned as a transparent electrode of a display element without any problems.
（発明の効果）
以上のように本発明によれば、同一基板上に搭
載された透明導電膜からなる複数の電極を、電極
どうしが相互に電気的に短絡しないようにマスク
をしてその上にスパツタリングで絶縁膜を形成す
ることにより、簡単な方法で透明導電膜が全く黒
化することなく効果的に絶縁膜を形成することが
できる。(Effects of the Invention) As described above, according to the present invention, a plurality of electrodes made of a transparent conductive film mounted on the same substrate are masked so that the electrodes do not electrically short-circuit each other. By forming the insulating film by sputtering on the transparent conductive film, the insulating film can be effectively formed by a simple method without any blackening of the transparent conductive film.
第１図は、従来のスパツタリング装置の概略
図、第２図ａは、従来例の構成による絶縁膜の形
成方法を示す平面図、第２図ｂは、そのＡ−Ａ断
面図、第３図ａは、本発明にかかる絶縁膜の形成
方法の一実施例により製造された薄膜EL素子の
平面図、第３図ｂは、そのＢ−Ｂ断面図である。
１１……ガラス基板、１２……絶縁層、１３…
…透明平行電極、１４……EL発光層、１５……
絶縁層、１６……背面平行電極。
FIG. 1 is a schematic diagram of a conventional sputtering apparatus, FIG. 2a is a plan view showing a method of forming an insulating film according to the conventional configuration, FIG. 2b is a cross-sectional view taken along line A-A, and FIG. FIG. 3a is a plan view of a thin film EL device manufactured by an embodiment of the method for forming an insulating film according to the present invention, and FIG. 3b is a sectional view taken along line B-B. 11...Glass substrate, 12...Insulating layer, 13...
...Transparent parallel electrode, 14...EL light emitting layer, 15...
Insulating layer, 16... Back parallel electrode.
Claims (1)
板上で、前記複数の電極の上に絶縁膜をスパツタ
リングによつて形成する方法において、前記絶縁
膜の形成領域を決めるマスクとして、絶縁性のマ
スクを使用するか、若しくは導電性のマスクを使
用する場合は前記複数の電極が相互に電気的に短
絡しないように電極とマスクとの間を絶縁して、
絶縁膜材料をスパツタリングすることを特徴とす
る透明導電膜上への絶縁膜の形成方法。 ２ 透明導電膜が、互いに直交する方向にそれぞ
れ複数本配列された２組の帯状電極群で構成され
るマトリツクス電極間に絶縁膜を介して層設され
たEL発光層を基板上に搭載して成る薄膜EL素子
の、前記２組のうちの一方の帯状電極群であるこ
とを特徴とする特許請求の範囲第１項記載の透明
導電膜上への絶縁膜の形成方法。 ３ 透明導電膜が、酸化インジウムすず膜からな
ることを特徴とする特許請求の範囲第１項記載の
透明導電膜上への絶縁膜の形成方法。[Scope of Claims] 1. In a method of forming an insulating film on a plurality of electrodes by sputtering on a substrate on which a plurality of electrodes made of a transparent conductive film are formed, a mask for determining a formation area of the insulating film. As such, an insulating mask is used, or when a conductive mask is used, the electrodes and the mask are insulated so that the plurality of electrodes do not electrically short-circuit with each other,
A method for forming an insulating film on a transparent conductive film, the method comprising sputtering an insulating film material. 2. An EL light-emitting layer is mounted on a substrate, with an insulating film interposed between the matrix electrodes, each consisting of two sets of strip-shaped electrodes each having a plurality of transparent conductive films arranged in directions perpendicular to each other. 2. The method of forming an insulating film on a transparent conductive film according to claim 1, wherein the electrode group is one of the two sets of strip-shaped electrodes of a thin film EL device consisting of a thin film EL device. 3. The method of forming an insulating film on a transparent conductive film according to claim 1, wherein the transparent conductive film is made of an indium tin oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175188A JPS6068590A (en) | 1983-09-24 | 1983-09-24 | Method of forming insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58175188A JPS6068590A (en) | 1983-09-24 | 1983-09-24 | Method of forming insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068590A JPS6068590A (en) | 1985-04-19 |
| JPH056319B2 true JPH056319B2 (en) | 1993-01-26 |
Family
ID=15991819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58175188A Granted JPS6068590A (en) | 1983-09-24 | 1983-09-24 | Method of forming insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068590A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320461A (en) * | 1986-07-14 | 1988-01-28 | Nippon Telegr & Teleph Corp <Ntt> | Thin film forming device |
| JP2773773B2 (en) * | 1989-02-23 | 1998-07-09 | 関西日本電気株式会社 | Method for manufacturing thin-film EL panel |
| GB0409521D0 (en) * | 2004-04-29 | 2004-06-02 | Fosroc International Ltd | Sacrificial anode assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821795B2 (en) * | 1978-05-23 | 1983-05-04 | シャープ株式会社 | Structure of thin film EL element |
-
1983
- 1983-09-24 JP JP58175188A patent/JPS6068590A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6068590A (en) | 1985-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6222315B1 (en) | Luminescent display panel with insulating films | |
| EP0645073B1 (en) | Low resistance, thermally stable electrode structure for electroluminescent displays | |
| JPH11121168A (en) | Organic electroluminescence element and its manufacture | |
| JPH056319B2 (en) | ||
| JPH0527924B2 (en) | ||
| JPH11312583A (en) | Manufacture of el element | |
| JP2844964B2 (en) | Manufacturing method of EL display device | |
| JP2773773B2 (en) | Method for manufacturing thin-film EL panel | |
| EP0450077A1 (en) | Thin-film electroluminescent element and method of manufacturing the same | |
| JPH05217673A (en) | Manufacture of thin film el element | |
| JPH056318B2 (en) | ||
| JPS6256636B2 (en) | ||
| JP3561978B2 (en) | Method for manufacturing electroluminescence device | |
| KR970005102B1 (en) | Thin film type electro luminescense display device | |
| JPS61188892A (en) | Formation of dielectric film | |
| JPH02306580A (en) | Manufacture of thin film electroluminescence element | |
| JPS61188890A (en) | Formation of dielectric film | |
| JPH05205874A (en) | Thin film el panel | |
| JPH0424639Y2 (en) | ||
| JPH0834125B2 (en) | Method for manufacturing multicolor thin film EL device | |
| JPH01204394A (en) | Thin film el element | |
| JPH07118387B2 (en) | Multicolor EL display device | |
| JPS6318318B2 (en) | ||
| JPS63136491A (en) | Manufacture of thin film el device | |
| JPH01315985A (en) | Manufacture of el panel |