JPS6455374A - Production of thin el layer - Google Patents

Production of thin el layer

Info

Publication number
JPS6455374A
JPS6455374A JP21338687A JP21338687A JPS6455374A JP S6455374 A JPS6455374 A JP S6455374A JP 21338687 A JP21338687 A JP 21338687A JP 21338687 A JP21338687 A JP 21338687A JP S6455374 A JPS6455374 A JP S6455374A
Authority
JP
Japan
Prior art keywords
substrate
thin
vacuum deposition
low
zns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21338687A
Other languages
Japanese (ja)
Inventor
Keiji Nunomura
Nobuyoshi Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21338687A priority Critical patent/JPS6455374A/en
Publication of JPS6455374A publication Critical patent/JPS6455374A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To produce a thin electroluminescent layer having high luminance over a large area without deteriorating high productivity by forming a thin ZnS:Mn film on a substrate by vacuum deposition while projecting low-speed ions on the substrate. CONSTITUTION:A low-speed ion gun 5 of end hole type or other type is set in an electron beam vacuum deposition device. The vacuum chamber 1 is evacuated and a substrate 2 having a first insulating layer is kept at a prescribed temp. with a heating lamp 3. Vacuum deposition is then carried out with an electron beam evaporating source 4 contg. pellets of a ZnS:Mn sintered body as the evaporating source. As this time, low-speed ions of Ar, etc., from the gun 5 are projected on the substrate 2 with 5-100eV acceleration energy. Thus, a thin film EL element having high luminance and superior adhesion to the base is obtd.
JP21338687A 1987-08-26 1987-08-26 Production of thin el layer Pending JPS6455374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21338687A JPS6455374A (en) 1987-08-26 1987-08-26 Production of thin el layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21338687A JPS6455374A (en) 1987-08-26 1987-08-26 Production of thin el layer

Publications (1)

Publication Number Publication Date
JPS6455374A true JPS6455374A (en) 1989-03-02

Family

ID=16638342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21338687A Pending JPS6455374A (en) 1987-08-26 1987-08-26 Production of thin el layer

Country Status (1)

Country Link
JP (1) JPS6455374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003520296A (en) * 1999-12-30 2003-07-02 ジェンヴァック エアロスペース コーポレーション Electron beam evaporation method of transparent indium tin oxide
JP2015081365A (en) * 2013-10-22 2015-04-27 株式会社半導体エネルギー研究所 Film deposition device, film deposition method, and film deposition material removal method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003520296A (en) * 1999-12-30 2003-07-02 ジェンヴァック エアロスペース コーポレーション Electron beam evaporation method of transparent indium tin oxide
JP2015081365A (en) * 2013-10-22 2015-04-27 株式会社半導体エネルギー研究所 Film deposition device, film deposition method, and film deposition material removal method

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