JPS6442323A - Production of thin film of ferroelectrics - Google Patents
Production of thin film of ferroelectricsInfo
- Publication number
- JPS6442323A JPS6442323A JP62157272A JP15727287A JPS6442323A JP S6442323 A JPS6442323 A JP S6442323A JP 62157272 A JP62157272 A JP 62157272A JP 15727287 A JP15727287 A JP 15727287A JP S6442323 A JPS6442323 A JP S6442323A
- Authority
- JP
- Japan
- Prior art keywords
- li2o
- ta2o5
- ion beam
- cluster ion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Abstract
PURPOSE:To form thin film of ferroelectrics having excellent crystallinity at a low temp. of a substrate by using the cluster ion beam method to form the thin film of ferroelectrics. CONSTITUTION:For example, the cluster ion beam of Li2O is generated by putting Li2O powder in a crucible of a cluster ion beam gun G1 and is projected on the substrate 1. On the other hand, the cluster ion beam of Ta2O5 is generated by putting Ta2O5 powder in a crucible of a cluster ion beam gun G2 and is projected on the substrate 1. The cluster ions of Li2O and Ta2O5 are mixed by migration effect on the surface to be vapor-deposited of the substrate 1 to form LiTaO3. In this case, the ratio of Li2O to Ta2O5 is needed to be 1:1 and the guns G1 and G2 are controlled so as to keep the ratio above-mentioned. At this time, O2 gas is used as reactive gas in order that it makes up for a small amt. of O2 separated when Li2O and Ta2O5 are evaporated, respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62157272A JPS6442323A (en) | 1987-02-18 | 1987-06-23 | Production of thin film of ferroelectrics |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3654587 | 1987-02-18 | ||
JP62157272A JPS6442323A (en) | 1987-02-18 | 1987-06-23 | Production of thin film of ferroelectrics |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442323A true JPS6442323A (en) | 1989-02-14 |
Family
ID=26375607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62157272A Pending JPS6442323A (en) | 1987-02-18 | 1987-06-23 | Production of thin film of ferroelectrics |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442323A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013195148A (en) * | 2012-03-16 | 2013-09-30 | Ricoh Co Ltd | Infrared sensor device |
-
1987
- 1987-06-23 JP JP62157272A patent/JPS6442323A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013195148A (en) * | 2012-03-16 | 2013-09-30 | Ricoh Co Ltd | Infrared sensor device |
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