JPS6442323A - Production of thin film of ferroelectrics - Google Patents

Production of thin film of ferroelectrics

Info

Publication number
JPS6442323A
JPS6442323A JP62157272A JP15727287A JPS6442323A JP S6442323 A JPS6442323 A JP S6442323A JP 62157272 A JP62157272 A JP 62157272A JP 15727287 A JP15727287 A JP 15727287A JP S6442323 A JPS6442323 A JP S6442323A
Authority
JP
Japan
Prior art keywords
li2o
ta2o5
ion beam
cluster ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157272A
Other languages
Japanese (ja)
Inventor
Tomoko Miyaura
Eiji Yamakawa
Satoshi Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP62157272A priority Critical patent/JPS6442323A/en
Publication of JPS6442323A publication Critical patent/JPS6442323A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00Compounds of tantalum
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/80Particles consisting of a mixture of two or more inorganic phases

Abstract

PURPOSE:To form thin film of ferroelectrics having excellent crystallinity at a low temp. of a substrate by using the cluster ion beam method to form the thin film of ferroelectrics. CONSTITUTION:For example, the cluster ion beam of Li2O is generated by putting Li2O powder in a crucible of a cluster ion beam gun G1 and is projected on the substrate 1. On the other hand, the cluster ion beam of Ta2O5 is generated by putting Ta2O5 powder in a crucible of a cluster ion beam gun G2 and is projected on the substrate 1. The cluster ions of Li2O and Ta2O5 are mixed by migration effect on the surface to be vapor-deposited of the substrate 1 to form LiTaO3. In this case, the ratio of Li2O to Ta2O5 is needed to be 1:1 and the guns G1 and G2 are controlled so as to keep the ratio above-mentioned. At this time, O2 gas is used as reactive gas in order that it makes up for a small amt. of O2 separated when Li2O and Ta2O5 are evaporated, respectively.
JP62157272A 1987-02-18 1987-06-23 Production of thin film of ferroelectrics Pending JPS6442323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62157272A JPS6442323A (en) 1987-02-18 1987-06-23 Production of thin film of ferroelectrics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3654587 1987-02-18
JP62157272A JPS6442323A (en) 1987-02-18 1987-06-23 Production of thin film of ferroelectrics

Publications (1)

Publication Number Publication Date
JPS6442323A true JPS6442323A (en) 1989-02-14

Family

ID=26375607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157272A Pending JPS6442323A (en) 1987-02-18 1987-06-23 Production of thin film of ferroelectrics

Country Status (1)

Country Link
JP (1) JPS6442323A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013195148A (en) * 2012-03-16 2013-09-30 Ricoh Co Ltd Infrared sensor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013195148A (en) * 2012-03-16 2013-09-30 Ricoh Co Ltd Infrared sensor device

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