JPS54153790A - Chromium oxide layer formation - Google Patents

Chromium oxide layer formation

Info

Publication number
JPS54153790A
JPS54153790A JP6254278A JP6254278A JPS54153790A JP S54153790 A JPS54153790 A JP S54153790A JP 6254278 A JP6254278 A JP 6254278A JP 6254278 A JP6254278 A JP 6254278A JP S54153790 A JPS54153790 A JP S54153790A
Authority
JP
Japan
Prior art keywords
chromium oxide
oxide layer
target
layer
layer formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6254278A
Other languages
Japanese (ja)
Other versions
JPS6052428B2 (en
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53062542A priority Critical patent/JPS6052428B2/en
Publication of JPS54153790A publication Critical patent/JPS54153790A/en
Publication of JPS6052428B2 publication Critical patent/JPS6052428B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:Reactive sputtering in O2 and N2 mixed gas with Cr as target is used to eliminate variations in etching time that depends on post bake temperatures, thereby providing an accurate, desired pattern on chromium oxide layer. CONSTITUTION:Glass target is mounted in sputtering equipment, and Cr layer is formed on the substrate by supttering Cr target in a plasma of Ar gas atomosphere at a given vacuum. Next, the atomosphere is changed in a given vacuum to N2 and O2 mixed gas with ratio of 20:1 to 1:10, and a plasma is generated to sputter the Cr target to form chromium oxide layer on the predeposited Cr layer.
JP53062542A 1978-05-25 1978-05-25 Formation method of chromium oxide film Expired JPS6052428B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53062542A JPS6052428B2 (en) 1978-05-25 1978-05-25 Formation method of chromium oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53062542A JPS6052428B2 (en) 1978-05-25 1978-05-25 Formation method of chromium oxide film

Publications (2)

Publication Number Publication Date
JPS54153790A true JPS54153790A (en) 1979-12-04
JPS6052428B2 JPS6052428B2 (en) 1985-11-19

Family

ID=13203211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53062542A Expired JPS6052428B2 (en) 1978-05-25 1978-05-25 Formation method of chromium oxide film

Country Status (1)

Country Link
JP (1) JPS6052428B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104141A (en) * 1980-12-22 1982-06-29 Dainippon Printing Co Ltd Photomask and photomask substrate
JPS5831336A (en) * 1981-08-19 1983-02-24 Konishiroku Photo Ind Co Ltd Raw material of photomask
JPS6033557A (en) * 1983-08-05 1985-02-20 Konishiroku Photo Ind Co Ltd Manufacture of material of electron beam mask
JPS6090336A (en) * 1983-10-24 1985-05-21 Toppan Printing Co Ltd Production of chromium mask blank
JPS6091356A (en) * 1983-10-25 1985-05-22 Hoya Corp Chromium mask blank and its production
JPS6093438A (en) * 1983-10-27 1985-05-25 Konishiroku Photo Ind Co Ltd Photomask
JPS60154254A (en) * 1984-01-24 1985-08-13 Hoya Corp Photomask blank and photomask
JPS61176934A (en) * 1985-01-31 1986-08-08 Toppan Printing Co Ltd Production of photomask blank
US4657648A (en) * 1981-03-17 1987-04-14 Osamu Nagarekawa Method of manufacturing a mask blank including a modified chromium compound

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6146821B2 (en) * 1980-12-22 1986-10-16 Dainippon Printing Co Ltd
JPS57104141A (en) * 1980-12-22 1982-06-29 Dainippon Printing Co Ltd Photomask and photomask substrate
US4657648A (en) * 1981-03-17 1987-04-14 Osamu Nagarekawa Method of manufacturing a mask blank including a modified chromium compound
JPS5831336A (en) * 1981-08-19 1983-02-24 Konishiroku Photo Ind Co Ltd Raw material of photomask
JPS6033557A (en) * 1983-08-05 1985-02-20 Konishiroku Photo Ind Co Ltd Manufacture of material of electron beam mask
JPS6090336A (en) * 1983-10-24 1985-05-21 Toppan Printing Co Ltd Production of chromium mask blank
JPH041339B2 (en) * 1983-10-24 1992-01-10 Toppan Printing Co Ltd
JPS6091356A (en) * 1983-10-25 1985-05-22 Hoya Corp Chromium mask blank and its production
JPS6237384B2 (en) * 1983-10-25 1987-08-12 Hoya Corp
JPS6093438A (en) * 1983-10-27 1985-05-25 Konishiroku Photo Ind Co Ltd Photomask
JPS60154254A (en) * 1984-01-24 1985-08-13 Hoya Corp Photomask blank and photomask
JPS6319854B2 (en) * 1984-01-24 1988-04-25 Hoya Corp
JPS61176934A (en) * 1985-01-31 1986-08-08 Toppan Printing Co Ltd Production of photomask blank

Also Published As

Publication number Publication date
JPS6052428B2 (en) 1985-11-19

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