JPS5455190A - Structure and production of thin film el element - Google Patents
Structure and production of thin film el elementInfo
- Publication number
- JPS5455190A JPS5455190A JP12208477A JP12208477A JPS5455190A JP S5455190 A JPS5455190 A JP S5455190A JP 12208477 A JP12208477 A JP 12208477A JP 12208477 A JP12208477 A JP 12208477A JP S5455190 A JPS5455190 A JP S5455190A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- electrodes
- film
- sno
- entire surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
Abstract
PURPOSE: To form a dielectric layer having high adhesiveness on transparent electrodes or glass substrates by letting binding force by atomic reaction between SnO2 or InO3 or glass substrates by the use of a Si3N4 film containing physically and chemically active oxygen components.
CONSTITUTION: A transparent electrode 11 composed of SnO2, In2O3 or other is deposited on a heat-resisting glass substrate 10 for panels and is photoetched to strip- form parallel matrix electrode structure. Next, a Si3N4 first dielectric layer 12 of the composite composition containing equivalent SiO2 of 0.1 to 10% is formed by sputtering over the entire surface, and a ZnS light emitting layer 13 is evaporated thereon. Thereafter, a second dielectric layer of the same composition or of Si3N4, Ta2O5, Y2O3, etc. is deposited thereafter, and the entire surface is convered with a protecting film 15 such as of Al2O3. After these, Al strip form back electrodes 16 are mounted on the film 15 by being intersected perpendicularly with the electrodes 11. Thereby, sufficient high electric fields may be applied to the ZnS light emitting layer 13 and light emission luminance is improved
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52122084A JPS5824915B2 (en) | 1977-10-11 | 1977-10-11 | Thin film EL element |
| US05/884,475 US4188565A (en) | 1977-09-16 | 1978-03-08 | Oxygen atom containing film for a thin-film electroluminescent element |
| DE19782812592 DE2812592A1 (en) | 1977-09-16 | 1978-03-22 | THIN-FILM ELECTROLUMINESCENT DISPLAY ELEMENT AND METHOD OF MANUFACTURING IT |
| GB12701/78A GB1602895A (en) | 1977-09-16 | 1978-03-31 | Thin-film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52122084A JPS5824915B2 (en) | 1977-10-11 | 1977-10-11 | Thin film EL element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5455190A true JPS5455190A (en) | 1979-05-02 |
| JPS5824915B2 JPS5824915B2 (en) | 1983-05-24 |
Family
ID=14827249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52122084A Expired JPS5824915B2 (en) | 1977-09-16 | 1977-10-11 | Thin film EL element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5824915B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154794A (en) * | 1981-02-23 | 1982-09-24 | Lohja Ab Oy | Thin film electroluminescent structure |
| WO1984003992A1 (en) * | 1983-03-31 | 1984-10-11 | Matsushita Electric Ind Co Ltd | Thin-film integrated device |
| JPS60202687A (en) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | Thin film electroluminescent element |
| JPS622495A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Manufacture of thin film el element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0186026U (en) * | 1987-11-27 | 1989-06-07 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444885A (en) * | 1977-09-16 | 1979-04-09 | Sharp Corp | Structure and manufacture of thin film el element |
-
1977
- 1977-10-11 JP JP52122084A patent/JPS5824915B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444885A (en) * | 1977-09-16 | 1979-04-09 | Sharp Corp | Structure and manufacture of thin film el element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57154794A (en) * | 1981-02-23 | 1982-09-24 | Lohja Ab Oy | Thin film electroluminescent structure |
| JPH0158639B2 (en) * | 1981-02-23 | 1989-12-12 | Erukotoreedo Ag | |
| WO1984003992A1 (en) * | 1983-03-31 | 1984-10-11 | Matsushita Electric Ind Co Ltd | Thin-film integrated device |
| JPS60202687A (en) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | Thin film electroluminescent element |
| JPS622495A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Manufacture of thin film el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5824915B2 (en) | 1983-05-24 |
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