JPS5447590A - Production of electroluminescence element - Google Patents

Production of electroluminescence element

Info

Publication number
JPS5447590A
JPS5447590A JP11443877A JP11443877A JPS5447590A JP S5447590 A JPS5447590 A JP S5447590A JP 11443877 A JP11443877 A JP 11443877A JP 11443877 A JP11443877 A JP 11443877A JP S5447590 A JPS5447590 A JP S5447590A
Authority
JP
Japan
Prior art keywords
layer
vapor deposition
zns
zno
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11443877A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP11443877A priority Critical patent/JPS5447590A/en
Publication of JPS5447590A publication Critical patent/JPS5447590A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make possible the improvement in brightness and the increase in dielectric strength by forming mixed layers of ZnS+ZnO at the interface of the vapor deposition layers of sulfide fluorescnet material.
CONSTITUTION: A tin oxide layer 2 provided as a transparent electrode on a glass substrate 1 under vacuum, and yttrium oxide 3 is vapor deposition formed as a dielectric layer thereon. Next, a zinc sulfide layer 4 mixed with activator such as manganese, etc. is evaporated. At this time, the degree of vacuum is lowered and oxygen is intruduced only at the begining and end of the vapor deposition, forming mixed layers 4a, 4a' composed of ZnS+ ZnO. Further a yttrium oxide layer 5 and an aluminum layer 6 as a back electrode are evaporated to complete the device. Hence, the interphase of the fluorescent material layer may be stabilized, leaching of sulfur to the electrode layer side inhibited and the improvement in brightness and the increase in dielectric strength achieved
COPYRIGHT: (C)1979,JPO&Japio
JP11443877A 1977-09-22 1977-09-22 Production of electroluminescence element Pending JPS5447590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11443877A JPS5447590A (en) 1977-09-22 1977-09-22 Production of electroluminescence element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11443877A JPS5447590A (en) 1977-09-22 1977-09-22 Production of electroluminescence element

Publications (1)

Publication Number Publication Date
JPS5447590A true JPS5447590A (en) 1979-04-14

Family

ID=14637726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11443877A Pending JPS5447590A (en) 1977-09-22 1977-09-22 Production of electroluminescence element

Country Status (1)

Country Link
JP (1) JPS5447590A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117096A (en) * 1988-10-25 1990-05-01 Res Dev Corp Of Japan Manufacture of thin film electroluminescence element
WO2022113287A1 (en) * 2020-11-27 2022-06-02 シャープ株式会社 Light emitting element, light emitting apparatus, and display apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117096A (en) * 1988-10-25 1990-05-01 Res Dev Corp Of Japan Manufacture of thin film electroluminescence element
WO2022113287A1 (en) * 2020-11-27 2022-06-02 シャープ株式会社 Light emitting element, light emitting apparatus, and display apparatus

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