JPS5444885A - Structure and manufacture of thin film el element - Google Patents

Structure and manufacture of thin film el element

Info

Publication number
JPS5444885A
JPS5444885A JP11201877A JP11201877A JPS5444885A JP S5444885 A JPS5444885 A JP S5444885A JP 11201877 A JP11201877 A JP 11201877A JP 11201877 A JP11201877 A JP 11201877A JP S5444885 A JPS5444885 A JP S5444885A
Authority
JP
Japan
Prior art keywords
dielectric layer
laminated
dielectric layers
dielectric
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11201877A
Other languages
Japanese (ja)
Other versions
JPS5718313B2 (en
Inventor
Hiroshi Kishishita
Yoshihiro Endo
Etsuo Mizukami
Kinichi Isaka
Jun Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11201877A priority Critical patent/JPS5444885A/en
Priority to US05/884,475 priority patent/US4188565A/en
Priority to DE19782812592 priority patent/DE2812592A1/en
Priority to GB12701/78A priority patent/GB1602895A/en
Publication of JPS5444885A publication Critical patent/JPS5444885A/en
Publication of JPS5718313B2 publication Critical patent/JPS5718313B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain uniform brightness over the entire luminous surface by securing insulation with the interface state stabilized, by using an Si3N4 film containing O2 atoms as its dielectric layer.
CONSTITUTION: Onto glass substrate 8, transparent electrode 9 of SnO2 or In2O3 is adhered and on it, the 1st Si3N4 dielectric layer 10 is laminated. Further, ZnS luminous layer 11 doped with Mn is provided onto it by an electron beam and after the 2nd dielectric layer 12 of Si3N4 is laminated again, Al back electrode 13 is fixed to its surface. Then, electrodes 9 and 13 are connected to AC power supply 7, thereby causing luminescence. Here, although the Si3N4 film constituting dielectric layers 10 and 12 is formed by the reactive sputtering method, a little N2O is mixed action gas of pure N2 and or of N2 Ar to less than 1%. Consequently, the adhesion of dielectric layers becomes hard and the generation of an interface potential decreases greatly.
COPYRIGHT: (C)1979,JPO&Japio
JP11201877A 1977-09-16 1977-09-16 Structure and manufacture of thin film el element Granted JPS5444885A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11201877A JPS5444885A (en) 1977-09-16 1977-09-16 Structure and manufacture of thin film el element
US05/884,475 US4188565A (en) 1977-09-16 1978-03-08 Oxygen atom containing film for a thin-film electroluminescent element
DE19782812592 DE2812592A1 (en) 1977-09-16 1978-03-22 THIN-FILM ELECTROLUMINESCENT DISPLAY ELEMENT AND METHOD OF MANUFACTURING IT
GB12701/78A GB1602895A (en) 1977-09-16 1978-03-31 Thin-film electroluminescent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11201877A JPS5444885A (en) 1977-09-16 1977-09-16 Structure and manufacture of thin film el element

Publications (2)

Publication Number Publication Date
JPS5444885A true JPS5444885A (en) 1979-04-09
JPS5718313B2 JPS5718313B2 (en) 1982-04-15

Family

ID=14575909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11201877A Granted JPS5444885A (en) 1977-09-16 1977-09-16 Structure and manufacture of thin film el element

Country Status (1)

Country Link
JP (1) JPS5444885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455190A (en) * 1977-10-11 1979-05-02 Sharp Corp Structure and production of thin film el element
US5789860A (en) * 1995-08-11 1998-08-04 Nippondenso Co., Ltd. Dielectric thin film composition and thin-film EL device using same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455190A (en) * 1977-10-11 1979-05-02 Sharp Corp Structure and production of thin film el element
JPS5824915B2 (en) * 1977-10-11 1983-05-24 シャープ株式会社 Thin film EL element
US5789860A (en) * 1995-08-11 1998-08-04 Nippondenso Co., Ltd. Dielectric thin film composition and thin-film EL device using same
US6036823A (en) * 1995-08-11 2000-03-14 Denso Corporation Dielectric thin film and thin-film EL device using same
DE19632277C2 (en) * 1995-08-11 2002-06-13 Denso Corp Dielectric thin film, a thin film electroluminescent device using the same, and methods of manufacturing the electroluminescent device

Also Published As

Publication number Publication date
JPS5718313B2 (en) 1982-04-15

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