TWI223672B - An improved process of ion-assistance sputtering deposition - Google Patents

Abstract

Disclosed is an ion-assistance method which enhances the quality of the film by providing ionic momentum to growing film and is an excellent process aid for film forming process. This invention relates to the combination of ionic assistance and sputtering process, by taking advantage of the characteristics of ion source and sputtering source as well as their spatial arrangement in vacuum chamber, to enhance the thin film characteristic quality as compared with that made from traditional sputtering process.

Description

1223672

[Previous technology] The sputtering process method uses positive ion momentum transferred from the plasma to target the target to bombard the cathode target, which will be placed on the substrate. Moving on to the growing thin-film atoms.浔 membrane characteristics. Due to sputtering process

Tori • Within the range of 10-3 Torr, the force of the second force is 10 ^ ^ ,, τ ,, and the plasma is generated in the vacuum chamber in this dry zone. The working pressure of the ion source must be lower than that of the mill of 10_ ” Force = Into the environment of the vacuum chamber, using a larger pumping rate, maintaining the working requirements of the ion source and the plating reduction source in the vacuum environment. The inventor of this case uses the ion source, the sputtering source and the vacuum pump. ^ Geometric space; Ann # The vacuum pressures of the ion source and the bond-killing source in the vacuum chamber can meet the working environment of the ion source and the sputtering source, and the ion-assisted sputtering process can be performed to produce a better-quality film. [Invention [Objective] The main purpose of the present invention is to provide a poor quality ion-assisted sputtering method for making a thin film with improved quality. In order to achieve this purpose, the inventor of the present invention has disclosed a process as defined in the scope of patent application. Embodiment] Please refer to FIG. 1, which is a schematic diagram of an ion-assisted sputtering system including an airtight reaction chamber 10, a rotating base 20 located in the reaction chamber, a

\\ CHENLIN \ Lika \ nsdlll55.ptd Page 5 1223672 5. Description of the Invention (3) (a) is the transmittance of the ion-assisted sputtered alumina film prepared in this embodiment; (b) is 5sccm; and (The process parameters of the alumina film without ion-assisted sputtering are the same as the process parameters of the above embodiment, except that the ion source is not working and the working gas of the sputtering source is argon 3. 5sccm; and ( c) is the transmittance of the glass substrate. It can be seen from Fig. 3 that the absorption of the ion-assisted sputtered alumina film is smaller than that of the ion-assisted sputtered alumina film. This result can also be verified from Figure 4. Figure 4 is a graph of the extinction coefficient of the alumina film, which is the result measured by an ellipsometry. Among them, the process conditions of the alumina film represented by (a) are shown in Figure 3. a) are the same, but the substrate used is changed to a silicon wafer; (b) the alumina film represented by the same process conditions as those in Figure 3 (b), but also f substrate is changed to a silicon wafer. Since the extinction coefficient is proportional to the absorption, from Figure 4: It can be seen that the curve (a) has a smaller value than the curve (b) A, and can be re-examined =! = Absorption of base oxide oxide film, without ion-assisted sputtering The absorption of the plated emulsion aluminum film is small. ,, Ί), and (b) show the results of measuring the surface roughness of the sputtered alumina film with and without ion assistance represented by two U in Figure 4 using an atomic force microscope, respectively, and (b ) Has a surface roughness of 348 ^ ^ ^ ^ ^ ^ The surface roughness of the oxidized oxidized oxidized oxidized Mingtao film is smaller than that of the latter film. ^ The above ί = the quality of the thin film obtained by the thin film of Zi-Fu plating is relatively good. According to the above description, the thin-assisted sputtering coating is obtained from the above description. The invention is made of irfr ϋ ^ ^ ^ β, and the IS clearly combines the ion-assisted method and sputtering for privatization, so that the deposited film is made. Alas, the μ-membrane film 11 is better than the one with only the sputtering process.

1223672

V. Description of the invention (4) The film has better characteristics, but the actual scope of the invention is not to be construed as limiting the scope of the present invention. All of them should meet the requirements of novelty and advancement of law, such as Jing Jing, Yin Xinzhu E, and the invention patent conditions. Xin Bei Bureau approved this invention. The patent application f is innovative and fully consistent with the application according to law to encourage invention,

\\ CHENLIN \ Lika \ nsdlll55.ptd Page 8 1223672 The diagram is a simple explanatory diagram; the diagram is a schematic diagram of the ion-assisted sputtering system applicable to the present invention. The first is to show the geometric configuration between the ore sputtering source and the ion in FIG. 1. A schematic diagram of the top view of the ion source and the transmission spectrum of (a " *) A & D's glass substrate and alumina film. Permeability of thin film to aid mineral reduction; Oxygen to aid money Figure 4: Extinction aluminum oxide thin film of aluminum oxide film Straightened from 々m-solid Bajia (a) to silicon substrate Wafer: Figure 2 (a) is the same, but the parts used are also the same as those in Figure 3 (b). The oxide film represented by f has the same process bar diagram #, but the substrate is changed to a silicon wafer; r) a And (b) show in Figure 4 using atomic force microscope measurement: the surface roughness and the Λ ion-assisted sputtering oxide film, the surface rough chain degree of (a) is 0.127nm, and the surface roughness of (b) is 348nm. Description of drawing number 1 0… reaction chamber 30… ion source 50… high vacuum cold beam pump

20 ··· Rotary base 21 ... Substrate 40 ··· Sputter source 41 ... Target 5 1 · · · T% vacuum cooling; East system exhaust

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Claims (1)

1223672 _ Case No. 89122592_ Year Month ___ 6. Application for Patent Scope 4. For the process of applying for the scope of item 1 of the patent application, where the distance between the sputtering source and the suction place of the high vacuum pump is greater than 100 mm. 5. For the process of claim 4 in the scope of patent application, wherein the distance between the sputtering source and the suction position of the high vacuum pump is 2 1 4 m. 6. The process of item 1 in the scope of patent application, wherein the distance between the sputtering source and the ion source is greater than 50 mm. 7. For the process of claim 6 in the scope of patent application, the distance between the sputtering source and the ion source is 16 6 m m. 8. The process of item 1 in the scope of patent application, wherein the working gas of the ion source is introduced into the reaction chamber at a flow rate of 2 to 75 seem. 9. For the process of claim 8 in the scope of patent application, wherein the working gas of the ion source is introduced into the reaction chamber at a flow rate of 5.5 s c c m. 10. The process of claim 1 in which the working gas of the sputtering source is introduced into the reaction chamber at a flow rate of 3 to 75 seem. 11. The process of claim 10 in the scope of patent application, wherein the working gas of the sputtering source is introduced into the reaction chamber at a flow rate of 8 seem. \\ Adm-host \ 20010610 \ P11100 \ nsdlll55amend01.ptc Page 11 2002.02.15.011 1223672 __Case No. 89122592_ Year Month Amendment ___ 6. Application for Patent Scope 12. For the process of applying for the scope of item 1 of the patent scope, where The working gases of the sputtering source are argon, nitrogen, and oxygen. 13. For the process of claim 12 in the scope of patent application, wherein the working gas of the sputtering source is argon. 14. The process of item 1 in the scope of patent application, wherein the working gas of the ion source is argon, nitrogen, oxygen, carbon tetrafluoride, and the like. 15. For the process of claim 14 in the scope of patent application, wherein the working gas of the ion source is ammonia. \\ Adm-host \ 20010610 \ Pl1100 \ nsdl1155amend01.ptc Page 12 2002.02.15.012