TWI223672B - An improved process of ion-assistance sputtering deposition - Google Patents
An improved process of ion-assistance sputtering deposition Download PDFInfo
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- TWI223672B TWI223672B TW89122592A TW89122592A TWI223672B TW I223672 B TWI223672 B TW I223672B TW 89122592 A TW89122592 A TW 89122592A TW 89122592 A TW89122592 A TW 89122592A TW I223672 B TWI223672 B TW I223672B
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[先前技術] 濺鍍製程法是利用電漿中 正離子動量轉移給靶材轟擊陰極靶材,將 著於基板上,a一簡單:、:宜離乾材’附 可改盖笼眩蛀咕Γ 動里予正在成長的薄膜原子’ Τ改。潯膜特性。由於濺鍍製程法[Previous technology] The sputtering process method uses positive ion momentum transferred from the plasma to target the target to bombard the cathode target, which will be placed on the substrate. Moving on to the growing thin-film atoms.浔 membrane characteristics. Due to sputtering process
Tori•到10-3 Torr範圍内, 二铿力疋在1〇 ^ ^ ,, τ ,, 在此乾圍内真空室產生電漿,進 離子源的工作壓力必須比1〇_”町的磨力 =進入真空室的環境中,使用抽氣速率較大乂,維 ίίΐ室ίί㈣真空環境中,離子源與減鍍源的工 作要求。本案發明人則利用離子源、濺鍍源和真空泵在 ,^幾何空;安n #真空室中離子源和滅鍵源的真 空壓力均能符合離子源和濺鍍源的工作環境,可進行離子 輔助濺鍍製程,製鍍較佳品質的薄膜。 [發明目的] 本發明的主要目的在提供一種敗良的離子輔助濺鍍製 私’可製鍵出品質提昇的薄膜。為達成此目的本案發明人 揭示了如申請專利範圍所定義的製程。 [較佳實施例] 請參閱圖一,為離子輔助濺鍍系統示意圖,其包含 氣密地反應室10,一位於該反應室内的旋轉基座20,一Tori • Within the range of 10-3 Torr, the force of the second force is 10 ^ ^ ,, τ ,, and the plasma is generated in the vacuum chamber in this dry zone. The working pressure of the ion source must be lower than that of the mill of 10_ ” Force = Into the environment of the vacuum chamber, using a larger pumping rate, maintaining the working requirements of the ion source and the plating reduction source in the vacuum environment. The inventor of this case uses the ion source, the sputtering source and the vacuum pump. ^ Geometric space; Ann # The vacuum pressures of the ion source and the bond-killing source in the vacuum chamber can meet the working environment of the ion source and the sputtering source, and the ion-assisted sputtering process can be performed to produce a better-quality film. [Invention [Objective] The main purpose of the present invention is to provide a poor quality ion-assisted sputtering method for making a thin film with improved quality. In order to achieve this purpose, the inventor of the present invention has disclosed a process as defined in the scope of patent application. Embodiment] Please refer to FIG. 1, which is a schematic diagram of an ion-assisted sputtering system including an airtight reaction chamber 10, a rotating base 20 located in the reaction chamber, a
\\CHENLIN\Lika\nsdlll55.ptd 第 5 頁 1223672 五、發明說明(3) 中(a )為本實施例所製鍍的有離子輔助濺鍍的氧化鋁薄 膜的穿透率;(b)為無離子輔助濺鍍的氧化鋁薄膜穿透 率,其製程參數與上述實施例的製程參數一樣,除'了離子 源沒有工作以及濺鍍源的工作氣體氬氣流量為丨3. 5sccm ; 及(c)為玻璃基板穿透率。從圖三中可看出有離子輔助 的濺鍍氧化鋁薄膜的吸收比無離子輔助濺鍍的氧化鋁薄膜 的吸收來得小。此結果也可從圖四得到相同驗證,圖四為 氧化鋁薄膜的消光係數曲線圖,是經過橢圓偏光儀量測的 結果,其中(a )所代表的氧化鋁薄膜其製程條件盘圖三 (a)者相同,但所使用的基板改為矽晶片;(b)所代表 的氧化鋁薄膜其製程條件也與圖三(b )者相同,但也是 f基板改為矽晶片。由於消光係數與吸收成正比,從圖四 中:看出曲線(a)比曲線(b) A有較小的值,可再度驗 = ! =賤鑛氧化銘薄膜的吸收,無離子輔助的 濺鍍乳化鋁溥膜的吸收來得小。 ,、Ί)、及(b)分別顯示使用原子力顯微鏡量測圖四中 二U 所代表的有及無離子輔助的濺鍍氧化鋁薄膜 的表面粗糙度的結果,直中的 导、 而(b)的表面粗糙度為〇· 348 ^ ^ ^ ^ ^ 钮績胺沾主二L — ⑴有有離子輔助濺鍍氧化 銘涛膜的表面粗糙度,小於後者鉦 膜的表面粗糙度。^上述ί =子輔㈣鍍氧化銘薄 得的薄膜品質比較優良。 卞稀助濺鍍衣耘所獲 從上列說明,本發明明破irfr ϋ^ ...^ β制,I S月明確地結合離子辅助法與濺鍍製 私汰,使付製鍍出的薄膜牯枓,μ 衣 寻膜特11比只有濺鍍製程法製鍍的\\ CHENLIN \ Lika \ nsdlll55.ptd Page 5 1223672 5. Description of the Invention (3) (a) is the transmittance of the ion-assisted sputtered alumina film prepared in this embodiment; (b) is 5sccm; and (The process parameters of the alumina film without ion-assisted sputtering are the same as the process parameters of the above embodiment, except that the ion source is not working and the working gas of the sputtering source is argon 3. 5sccm; and ( c) is the transmittance of the glass substrate. It can be seen from Fig. 3 that the absorption of the ion-assisted sputtered alumina film is smaller than that of the ion-assisted sputtered alumina film. This result can also be verified from Figure 4. Figure 4 is a graph of the extinction coefficient of the alumina film, which is the result measured by an ellipsometry. Among them, the process conditions of the alumina film represented by (a) are shown in Figure 3. a) are the same, but the substrate used is changed to a silicon wafer; (b) the alumina film represented by the same process conditions as those in Figure 3 (b), but also f substrate is changed to a silicon wafer. Since the extinction coefficient is proportional to the absorption, from Figure 4: It can be seen that the curve (a) has a smaller value than the curve (b) A, and can be re-examined =! = Absorption of base oxide oxide film, without ion-assisted sputtering The absorption of the plated emulsion aluminum film is small. ,, Ί), and (b) show the results of measuring the surface roughness of the sputtered alumina film with and without ion assistance represented by two U in Figure 4 using an atomic force microscope, respectively, and (b ) Has a surface roughness of 348 ^ ^ ^ ^ ^ ^ The surface roughness of the oxidized oxidized oxidized oxidized Mingtao film is smaller than that of the latter film. ^ The above ί = the quality of the thin film obtained by the thin film of Zi-Fu plating is relatively good. According to the above description, the thin-assisted sputtering coating is obtained from the above description. The invention is made of irfr ϋ ^ ^ ^ β, and the IS clearly combines the ion-assisted method and sputtering for privatization, so that the deposited film is made. Alas, the μ-membrane film 11 is better than the one with only the sputtering process.
12236721223672
五、發明說明(4) 薄膜特性更佳,惟該實 圍’凡未脫離本發明技 包含於本案專利範圍中 施例並非用於限制本發明 藝精神為之等效實施或變 之專利範 更,均應 合新穎性及進步性之法金 只习 靖,銀心主E之法疋發明專利條件 心Μ 貝局核准本件發明直刹由 感德便。 卞I明專利申請f 創新,且充分符 爰依法提出申 ,以勵發明,至V. Description of the invention (4) The film has better characteristics, but the actual scope of the invention is not to be construed as limiting the scope of the present invention. All of them should meet the requirements of novelty and advancement of law, such as Jing Jing, Yin Xinzhu E, and the invention patent conditions. Xin Bei Bureau approved this invention. The patent application f is innovative and fully consistent with the application according to law to encourage invention,
\\CHENLIN\Lika\nsdlll55.ptd 第8頁 1223672 圖式簡單說明 圖;圖為適用於本發明的離子輔助濺鍍系統的示意 圖一為顯示圖一中的濺鑛源、離 之間的幾何配置的俯視示意圖;離子源及…抽虱處 中(a"*) A &丁士玻璃基板及氧化鋁薄膜的穿透率光譜圖,其 !㈣薄膜的本穿發透v實鍰的有離子輔助減鑛的 薄膜穿透率;為助錢的氧㈣ 圖四為虱化鋁薄膜的消光係 的氧化鋁薄膜直·々從从也m —固八甲(a)所代表 的基板改為矽晶片:圖二(a)者相同,但所使用 件也與圖三(b)者相鬥)f代表的氧化紹薄膜其製程條 圖 #相同,但也是將基板改為矽晶片; r ) a及(b)分別顯示使用原子力顯微鏡量測圖四中 :表面粗及Λ離子輔助的濺鍍氧化銘薄膜 、中(a)的表面粗链度為0.127nm,而 (b)的表面粗糙度為〇. 348nm。 圖號說明 1 0…反應室 30…離子源 50…高真空冷束泵\\ CHENLIN \ Lika \ nsdlll55.ptd Page 8 1223672 The diagram is a simple explanatory diagram; the diagram is a schematic diagram of the ion-assisted sputtering system applicable to the present invention. The first is to show the geometric configuration between the ore sputtering source and the ion in FIG. 1. A schematic diagram of the top view of the ion source and the transmission spectrum of (a " *) A & D's glass substrate and alumina film. Permeability of thin film to aid mineral reduction; Oxygen to aid money Figure 4: Extinction aluminum oxide thin film of aluminum oxide film Straightened from 々m-solid Bajia (a) to silicon substrate Wafer: Figure 2 (a) is the same, but the parts used are also the same as those in Figure 3 (b). The oxide film represented by f has the same process bar diagram #, but the substrate is changed to a silicon wafer; r) a And (b) show in Figure 4 using atomic force microscope measurement: the surface roughness and the Λ ion-assisted sputtering oxide film, the surface rough chain degree of (a) is 0.127nm, and the surface roughness of (b) is 348nm. Description of drawing number 1 0… reaction chamber 30… ion source 50… high vacuum cold beam pump
20 ···旋轉基座 21…基板 40 ···濺鍍源 41…靶材 5 1 · · · T%真空冷;東系抽氣處20 ··· Rotary base 21 ... Substrate 40 ··· Sputter source 41 ... Target 5 1 · · · T% vacuum cooling; East system exhaust
\\CHENLIN\Lika\nsdlll55.ptd 第9頁\\ CHENLIN \ Lika \ nsdlll55.ptd Page 9
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Cited By (1)
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TWI401329B (en) * | 2004-12-28 | 2013-07-11 | Ulvac Inc | Sputtering source, sputtering apparatus, and film manufacturing method |
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TWI401329B (en) * | 2004-12-28 | 2013-07-11 | Ulvac Inc | Sputtering source, sputtering apparatus, and film manufacturing method |
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