TWI401329B - Sputtering source, sputtering apparatus, and film manufacturing method - Google Patents
Sputtering source, sputtering apparatus, and film manufacturing method Download PDFInfo
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- TWI401329B TWI401329B TW094145890A TW94145890A TWI401329B TW I401329 B TWI401329 B TW I401329B TW 094145890 A TW094145890 A TW 094145890A TW 94145890 A TW94145890 A TW 94145890A TW I401329 B TWI401329 B TW I401329B
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- 238000004544 sputter deposition Methods 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000010408 film Substances 0.000 claims description 61
- 239000002245 particle Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明係關於有機EL元件之製造方法及製造裝置，特別是關於，藉由濺鍍而在有機層上形成電極之有機EL元件之製造方法及製造裝置。The present invention relates to a method and apparatus for producing an organic EL device, and more particularly to a method and apparatus for producing an organic EL device in which an electrode is formed on an organic layer by sputtering.
以往，於有機層上形成電極，特別是金屬或合金之電極時，係採用蒸鍍法。此係在蒸鍍法中，幾乎不產生電子等，不會對有機層造成損傷的關係。Conventionally, when an electrode, particularly a metal or alloy electrode, is formed on an organic layer, a vapor deposition method is employed. In the vapor deposition method, electrons and the like are hardly generated, and the organic layer is not damaged.
但是，在蒸鍍法中，係將金屬或合金加熱為高溫而使其蒸發，蒸鍍於形成有有機層之基板，所以，為了不使有機層因為高溫而損傷，所以，需要將蒸鍍源由基板充分分開，且將基板加以冷卻。進而，為了抑制溫度上升，薄膜形成速度也無法變快。However, in the vapor deposition method, a metal or an alloy is heated to a high temperature and evaporated, and vapor deposited on a substrate on which an organic layer is formed. Therefore, in order to prevent the organic layer from being damaged by high temperature, it is necessary to use a vapor deposition source. The substrate is sufficiently separated and the substrate is cooled. Further, in order to suppress the temperature rise, the film formation speed cannot be increased.
進而，在蒸鍍法中，無法使用高沸點之金屬，所以，使用的金屬有其限制。特別是，在高沸點之金屬化合物等中，無法使用蒸鍍法。Further, in the vapor deposition method, a metal having a high boiling point cannot be used, and therefore, the metal to be used has a limitation. In particular, in a high-boiling metal compound or the like, a vapor deposition method cannot be used.
因此，提出了藉由濺鍍而於有機層上形成電極膜之方法。Therefore, a method of forming an electrode film on an organic layer by sputtering has been proposed.
但是，於通常之半導體上等形成電極膜之濺鍍方法中，所產生之帶電粒子會對有機層造成損傷。在有機EL等所使用之有機層，由於非常纖細，所以，由於射入之帶電粒子之損傷，會有電子或電洞之傳達等之功能消失或顯著降低的情形。However, in the sputtering method of forming an electrode film on a general semiconductor, the generated charged particles may cause damage to the organic layer. Since the organic layer used in the organic EL or the like is very fine, the function of transmitting electrons or holes may be lost or significantly lowered due to damage of the charged particles.
因此，揭示有於基板和靶之間，設置接地電位或正電位之柵極電極、柵孔，以使衝擊基板之電子減少之技術(專利文獻1)。Therefore, there is disclosed a technique in which a gate electrode or a gate hole having a ground potential or a positive potential is provided between a substrate and a target to reduce electrons that strike the substrate (Patent Document 1).
進而，揭示有於基板和靶之間，使產生和基板平行之磁場，來使衝擊基板之電子減少之技術(專利文獻2)。Further, a technique for causing a magnetic field parallel to the substrate to be generated between the substrate and the target to reduce electrons on the substrate is disclosed (Patent Document 2).
但是，於前述以往技術中，伴隨基板的大型化，需要柵極電極、柵孔之大型化、磁場產生裝置之大型化，實質上難於對應。進而，如具備大型的柵極電極、柵孔，清潔頻度變高，維護上有其不利之處。進而，也會大為受到因汙物之剝離所致之擊穿現像等之影響。However, in the above-described prior art, as the size of the substrate increases, the size of the gate electrode and the gate hole increases, and the size of the magnetic field generating device increases, which is substantially difficult to cope with. Further, if a large gate electrode or a gate hole is provided, the cleaning frequency becomes high, and there is a disadvantage in maintenance. Furthermore, it is also greatly affected by the breakdown of the stain due to the peeling of the dirt.
進而，於將複數的金屬同時或依序形成薄膜時，會有以一台之裝置無法形成複數的薄膜之情形。Further, when a plurality of metals are simultaneously or sequentially formed into a film, a plurality of films cannot be formed by one device.
[專利文獻1]日本專利特開平10-158821[Patent Document 1] Japanese Patent Laid-Open No. 10-158821
[專利文獻2]日本專利特開平10-228981[Patent Document 2] Japanese Patent Laid-Open No. 10-228981
提供：藉由濺鍍，於有機層上形成金屬等之濺鍍膜的情形，可以抑制對有機層之損傷的電極膜之形成方法及形成裝置。Provided is a method of forming an electrode film and a forming apparatus capable of suppressing damage to an organic layer when a sputtering film such as a metal is formed on an organic layer by sputtering.
進而，提供：即使基板變得大型化，也可以容易對應之濺鍍膜的形成方法及形成裝置。Further, it is possible to provide a method of forming a sputtering film and a forming apparatus which can easily correspond to each other even if the substrate is increased in size.
進而，提供：藉由同時或依序以一台裝置可以形成複 數的金屬之濺鍍的電極膜之形成裝置。Further, providing: by means of a device simultaneously or sequentially A number of metal-plated electrode film forming devices.
為了解決前述課題，本發明為一種濺鍍源，係具有：靶、及與前述靶分開配置，具有細長之開口部的遮蔽板，使前述靶所放出之濺鍍粒子通過前述開口部而到達薄膜形成對象物表面者，其特徵為：沿著前述開口部的長邊方向，於前述開口部的兩側配置有：第一、第二捕捉磁鐵部，於前述第一、第二捕捉磁鐵部之面對前述開口部的側面，配置有不同磁極。In order to solve the above problems, the present invention provides a sputtering source having a target and a shielding plate which is disposed apart from the target and has an elongated opening, and the sputtering particles released from the target pass through the opening to reach the film. The surface of the object is characterized in that: first and second capturing magnet portions are disposed on both sides of the opening along the longitudinal direction of the opening, and the first and second capturing magnet portions are Different magnetic poles are disposed facing the side surface of the opening.
另外，本發明係一種濺鍍源，前述遮蔽板，係被連接於相對於施加於前述靶之電壓的正電壓。Further, the present invention is a sputtering source, and the shielding plate is connected to a positive voltage with respect to a voltage applied to the target.
另外，本發明係一種濺鍍源，前述遮蔽板，係被設為與配置有前述濺鍍源之真空槽為相同電位。Further, the present invention is a sputtering source, and the shielding plate is set to have the same potential as a vacuum chamber in which the sputtering source is disposed.
另外，本發明係一種濺鍍源，前述靶係配置於容器狀的框體之內部，前述遮蔽板係介由絕緣物而配置於前述框體的開口，前述框體與前述遮蔽板之間係被絕緣。Further, the present invention is a sputtering source, wherein the target is disposed inside a container-shaped frame, and the shielding plate is disposed in an opening of the frame via an insulator, and the frame and the shielding plate are disposed Is insulated.
另外，本發明係一種濺鍍源，前述開口部，係排列複數的開口而構成。Further, the present invention is a sputtering source, and the opening is formed by arranging a plurality of openings.
另外，本發明為一種濺鍍源，構成為具有：靶、及與前述靶分開配置，具有細長之開口部的遮蔽板，使前述靶所放出之濺鍍粒子通過前述開口部而到達薄膜形成對象物表面者，其特徵為：前述遮蔽板，係被連接於相對施加於前述靶之電壓為正電壓。Further, the present invention is a sputtering source, comprising: a target and a shielding plate which is disposed apart from the target and has an elongated opening, and the sputtering particles released from the target pass through the opening to reach a film formation target The surface of the object is characterized in that the shielding plate is connected to a voltage that is relatively applied to the target to be a positive voltage.
另外，本發明為一種濺鍍源，前述遮蔽板，係被設為與配置有前述濺鍍源之真空槽為相同電位。Further, the present invention is a sputtering source, and the shielding plate is set to have the same potential as a vacuum chamber in which the sputtering source is disposed.
另外，本發明係一種濺鍍源，前述真空槽與前述遮蔽板，係被連接於接地電位，前述靶係被施加相對於前述接地電位為負電壓者。Further, the present invention is a sputtering source, wherein the vacuum chamber and the shielding plate are connected to a ground potential, and the target is applied with a negative voltage with respect to the ground potential.
另外，本發明為一種電鍍源，前述靶係配置於容器狀的框體之內部，前述遮蔽板係介由絕緣物而配置於前述框體的開口，前述框體與前述遮蔽板之間係被絕緣。Further, the present invention is a plating source, wherein the target is disposed inside a container-shaped frame, and the shielding plate is disposed in an opening of the frame via an insulator, and the frame is interposed between the frame and the shielding plate. insulation.
另外，本發明係一種濺鍍源，前述開口部，係排列複數的開口而構成。Further, the present invention is a sputtering source, and the opening is formed by arranging a plurality of openings.
另外，本發明係一種濺鍍裝置，其特徵為：具有，真空槽、及配置於前述真空槽之濺鍍源，前述濺鍍源構成為具有：靶、及遮蔽板、及形成於前述遮蔽板之細長的開口部，前述遮蔽板係與前述靶分開配置，把前述靶所放出之濺鍍粒子係通過前述開口部而到達薄膜形成對象物表面者，前述遮蔽板，係被連接於對施加於前述靶之電壓為正電壓，前述薄膜形成對象物與前述濺鍍源，係在前述開口的長邊方向與直角方向被相對地移動。Further, the present invention provides a sputtering apparatus comprising: a vacuum chamber; and a sputtering source disposed in the vacuum chamber, wherein the sputtering source is configured to include a target, a shielding plate, and a shielding plate In the elongated opening, the shielding plate is disposed apart from the target, and the sputtering particles released from the target pass through the opening to reach the surface of the film forming object, and the shielding plate is connected to the pair. The voltage of the target is a positive voltage, and the film formation target and the sputtering source are relatively moved in the longitudinal direction and the orthogonal direction of the opening.
另外，本發明係一種濺鍍裝置，前述遮蔽板與前述真空槽，係被連接於接地電位。Further, the present invention is a sputtering apparatus, and the shielding plate and the vacuum chamber are connected to a ground potential.
另外，本發明係一種濺鍍裝置，其特徵為：具有，真空槽、及配置於前述真空槽之濺鍍源，前述濺鍍源係具有：靶、及遮蔽板、及形成於前述遮蔽板之細長的開口部、及第一、第二捕捉磁鐵部，前述遮蔽板係與前述靶分開配置，把前述靶所放出之濺鍍粒子係通過前述開口部而到達薄膜形成對象物表面者，前述濺鍍源構成為具有：靶、及與前述靶分開配置，且具有細長的開口部之遮蔽板，從前述靶所放出之濺鍍粒子係通過前述開口部而到達薄膜形成對象物表面，前述第一、第二捕捉磁鐵部係沿著前述開口部的長邊方向，而被配置於前述開口部的兩側，於前述第一、第二捕捉磁鐵部之面對前述開口部的側面，配置有不同磁極。Further, the present invention provides a sputtering apparatus comprising: a vacuum chamber; and a sputtering source disposed in the vacuum chamber, wherein the sputtering source includes a target, a shielding plate, and a shielding plate. The elongated opening and the first and second capturing magnet portions, wherein the shielding plate is disposed apart from the target, and the sputtered particles released by the target pass through the opening to reach the surface of the film forming object, and the splashing The plating source includes a target and a shielding plate that is disposed apart from the target and has an elongated opening, and the sputtering particles released from the target pass through the opening to reach the surface of the thin film forming object, and the first The second capturing magnet portion is disposed on both sides of the opening along the longitudinal direction of the opening, and is disposed on a side surface of the first and second capturing magnet portions facing the opening. magnetic pole.
另外，本發明係一種濺鍍裝置，前述遮蔽板，係被連接於相對於施加於前述靶之電壓為正電壓。Further, the present invention is a sputtering apparatus, wherein the shielding plate is connected to a positive voltage with respect to a voltage applied to the target.
另外，本發明係一種濺鍍裝置，前述遮蔽板與前述真空槽，係被連接於接地電位。Further, the present invention is a sputtering apparatus, and the shielding plate and the vacuum chamber are connected to a ground potential.
另外，本發明係一種薄膜之製造方法，係使從配置於真空槽之靶表面所放出的濺鍍粒子通過設置於遮蔽板之開口部，使到達露出薄膜形成對象物上之有機薄膜表面，而形成薄膜者，其特徵為：對前述遮蔽板，施加相對於前述靶的電位為正電壓者。Further, the present invention provides a method for producing a film by allowing sputtering particles discharged from a surface of a target placed in a vacuum chamber to pass through an opening of a shielding plate to reach an surface of an organic thin film on which a film formation target is exposed. In the case of forming a film, a positive voltage is applied to the shielding plate with respect to the potential of the target.
另外，本發明係一種薄膜之製造方法，將前述遮蔽板與前述真空槽連接於接地電位， 對前述靶施加相對於接地電位為負電壓者。Further, the present invention is a method of manufacturing a film, wherein the shielding plate and the vacuum chamber are connected to a ground potential, A negative voltage is applied to the target with respect to the ground potential.
另外，本發明係一種薄膜之製造方法，係使從配置於真空槽之靶表面所放出的濺鍍粒子通過設置於遮蔽板之開口部，使到達露出薄膜形成對象物上之有機薄膜表面，而形成薄膜者，其特徵為：形成對前述遮蔽板為平行之磁力線，使通過前述磁力線之前述濺鍍粒子射入前述有機薄膜表面。Further, the present invention provides a method for producing a film by allowing sputtering particles discharged from a surface of a target placed in a vacuum chamber to pass through an opening of a shielding plate to reach an surface of an organic thin film on which a film formation target is exposed. The film is formed by forming magnetic lines of force parallel to the shielding plate, and the sputtering particles passing through the magnetic lines of force are incident on the surface of the organic film.
另外，本發明係一種薄膜之製造方法，對前述遮蔽板施加相對於前述靶之電位為正電壓者。Further, the present invention is a method for producing a film, wherein a positive voltage is applied to the shielding plate with respect to a potential of the target.
另外，本發明係一種薄膜之製造方法，將前述遮蔽板與前述真空槽連接於接地電位，對前述靶施加相對於接地電位為負電壓者。Further, the present invention provides a method for producing a film, wherein the shielding plate and the vacuum chamber are connected to a ground potential, and a negative voltage is applied to the target with respect to a ground potential.
本發明係如前述般構成，電子或電荷/質量比大的帶電粒子不會到達薄膜形成對象物，而藉由中性粒子來形成薄膜。因此，即使於薄膜形成對象物表面形成容易損傷之薄膜，也可藉由濺鍍法對該薄膜表面層積薄膜。The present invention is constituted as described above, and charged particles having a large electron or charge/mass ratio do not reach the film formation target, but a film is formed by neutral particles. Therefore, even if a film which is easily damaged is formed on the surface of the film formation object, a film can be laminated on the surface of the film by sputtering.
於有機薄膜表面藉由濺鍍法來形成薄膜時，電子或離子不會射入有機薄膜表面，所以，不會對有機薄膜產生損傷。When a thin film is formed on the surface of an organic thin film by sputtering, electrons or ions do not enter the surface of the organic thin film, so that the organic thin film is not damaged.
參照第1圖，符號11~13係本發明之濺鍍源，符號1係具有該濺鍍源11~13之本發明的濺鍍裝置。Referring to Fig. 1, reference numerals 11 to 13 are sputtering sources of the present invention, and reference numeral 1 is a sputtering apparatus of the present invention having the sputtering sources 11 to 13.
此濺鍍裝置1係具有真空槽10，於該真空槽10內配置有一至複數台的濺鍍源11~13。此處為三台。於真空槽10連接有真空排氣系統25，構成可以將真空槽10內予以真空排氣。The sputtering apparatus 1 has a vacuum chamber 10 in which a plurality of sputtering sources 11 to 13 are disposed. Here are three. A vacuum exhaust system 25 is connected to the vacuum chamber 10, and the inside of the vacuum chamber 10 can be evacuated.
於真空槽10設置有搬入孔21與搬出孔22，藉由真空排氣系統25而將真空槽10內予以真空排氣，在到達特定壓力後，打開設置於搬入孔21之真空閥，從連接於搬入孔21之前工程的有機薄膜製造裝置，將薄膜形成對象物30搬入真空槽內。The vacuum chamber 10 is provided with a carry-in hole 21 and a carry-out hole 22, and the inside of the vacuum chamber 10 is evacuated by the vacuum exhaust system 25, and after reaching a specific pressure, the vacuum valve provided in the carry-in hole 21 is opened, and the connection is made. The organic thin film manufacturing apparatus that was used before the loading of the hole 21 carries the film forming object 30 into the vacuum chamber.
於所搬入之薄膜形成對象物30的表面形成有有機薄膜。此有機薄膜係朝向下方。An organic thin film is formed on the surface of the film formation object 30 to be carried in. This organic film is oriented downward.
各濺鍍源11~13係如後述般，構成為可以放出濺鍍粒子。於濺鍍源11~13內導入濺鍍氣體，一面從濺鍍源11~13放出濺鍍粒子，一面使薄膜形成對象物30移動，如使依序通過各濺鍍源11~13之上時，會於薄膜形成對象物30之有機薄膜的表面形成導電性薄膜等之濺鍍薄膜。Each of the sputtering sources 11 to 13 is configured to emit sputtering particles as will be described later. When the sputtering gas is introduced into the sputtering sources 11 to 13, the sputtering target particles are discharged from the sputtering sources 11 to 13, and the thin film forming object 30 is moved, and when it is sequentially passed over the sputtering sources 11 to 13, A sputtering film such as a conductive film is formed on the surface of the organic film of the film formation object 30.
如於有機薄膜表面形成濺鍍膜時，則設置於搬出孔22之真空閥被打開，形成有濺鍍膜之薄膜形成對象物30從搬出孔22被搬運至後工程之製造裝置。When a sputter film is formed on the surface of the organic film, the vacuum valve provided in the carry-out hole 22 is opened, and the film forming object 30 on which the sputter film is formed is transported from the carry-out hole 22 to the manufacturing apparatus of the post-engineering.
真空槽10內，在從搬入孔21將薄膜形成對象物30搬入時，以及從搬出孔22搬出時，也是維持真空環境。In the vacuum chamber 10, when the film forming object 30 is carried in from the loading hole 21 and when it is carried out from the carrying hole 22, the vacuum environment is maintained.
另外，符號23係保持薄膜形成對象物30之支撐器，符號24係表示移動薄膜形成對象物之移動裝置。Further, reference numeral 23 denotes a holder for holding the film forming object 30, and reference numeral 24 denotes a moving device for moving the film forming object.
此處，各濺鍍源11~13為相同構造，第2(a)圖係表示其之外觀，第2(b)圖係表示其內部。Here, each of the sputtering sources 11 to 13 has the same structure, the second (a) diagram shows the appearance thereof, and the second (b) diagram shows the inside.
此濺鍍源11~13係具有細長的框體101。框體101係容器狀，於該框體101內的底壁上配置有細長的靶部120。The sputtering sources 11 to 13 have an elongated frame 101. The casing 101 is in the shape of a container, and an elongated target portion 120 is disposed on the bottom wall of the casing 101.
靶部120係於靶支撐器121的表面上固定有靶122，於背面側配置有磁控管放電用磁鐵123。The target portion 120 has a target 122 fixed to the surface of the target holder 121, and a magnetron discharge magnet 123 disposed on the back side.
靶122係細長板狀，於框體101的內部當中，沿著框體101的長邊方向而配置，靶122的表面係與框體101的開口平行面對。此處，靶122係金屬材料等之導電性材料。The target 122 is formed in an elongated plate shape, and is disposed along the longitudinal direction of the casing 101 in the interior of the casing 101, and the surface of the target 122 faces the opening of the casing 101 in parallel. Here, the target 122 is a conductive material such as a metal material.
將連接有真空槽10之電位設成接地電位時，靶支撐器121係被連接於濺鍍電源108，將直流之負電壓或包含偏壓電壓的交流電壓介由靶支撐器121而能施加於靶122。When the potential at which the vacuum chamber 10 is connected is set to the ground potential, the target holder 121 is connected to the sputtering power source 108, and a negative DC voltage or an AC voltage including a bias voltage can be applied to the target holder 121 via the target holder 121. Target 122.
於由框體101所構成之容器的開口上介由絕緣物104而配置有細長的遮蔽板103，框體101的開口係以遮蔽板103而被塞住。藉此，靶122係藉由框體101之側壁來包圍前後左右之外，於靶122之上方位置而除了後述之開口部107a的部份外，也藉由遮蔽板103而被塞住。因此，以靶122的表面和框體101的壁面與遮蔽板103而包含靶122表面上的空間。於此空間形成後述之電漿。An elongated shielding plate 103 is disposed on the opening of the container constituted by the casing 101 via the insulator 104, and the opening of the casing 101 is blocked by the shielding plate 103. Thereby, the target 122 is surrounded by the side walls of the casing 101, and is positioned above the target 122, and is blocked by the shielding plate 103 in addition to the portion of the opening 107a to be described later. Therefore, the space on the surface of the target 122 is included by the surface of the target 122 and the wall surface of the frame 101 and the shielding plate 103. The plasma described later is formed in this space.
框體101和遮蔽板103至少表面是以導電性材料所構成。框體101和遮蔽板103例如係以金屬構成。框體101係和遮蔽板103與真空槽10絕緣，而被設為浮游電位。相對於此，於此例中，遮蔽板103係電性連接於真空槽10。真空槽10係被設成接地電位，所以，遮蔽板103也是被設為接地電位。At least the surface of the frame body 101 and the shielding plate 103 is made of a conductive material. The frame body 101 and the shielding plate 103 are made of, for example, metal. The casing 101 and the shielding plate 103 are insulated from the vacuum chamber 10 and set to a floating potential. On the other hand, in this example, the shielding plate 103 is electrically connected to the vacuum chamber 10. Since the vacuum chamber 10 is set to the ground potential, the shield plate 103 is also set to the ground potential.
但是，遮蔽板103的電位並不是接地電位，而是比對靶122的施加電壓更接近接地電位，對於靶122如係正電壓，則對於接地電位可以是正電壓，也可以對於接地電壓為負電壓。框體101也可以是絕緣物。在使遮蔽板103成為接地電位以外的電壓時，可將遮蔽板連接於偏壓電源110，而施加電壓。However, the potential of the shielding plate 103 is not the ground potential, but is closer to the ground potential than the applied voltage of the target 122. For the target 122, if it is a positive voltage, it may be a positive voltage for the ground potential or a negative voltage for the ground voltage. . The frame 101 may also be an insulator. When the shield plate 103 is brought to a voltage other than the ground potential, the shield plate can be connected to the bias power source 110 to apply a voltage.
於此濺鍍源11~13中，靶122係被配置於靶支撐器121的框體101之開口側之面，磁控管放電用磁鐵123係被配置於面向靶支撐器121的框體101之底壁側之面。靶122表面和遮蔽板103的背面係平行地相互面對。In the sputtering sources 11 to 13, the target 122 is disposed on the opening side of the housing 101 of the target holder 121, and the magnetron discharge magnet 123 is disposed on the housing 101 facing the target holder 121. The side of the bottom wall side. The surface of the target 122 and the back surface of the shielding plate 103 face each other in parallel.
於遮蔽板103的寬度方向中央位置形成有沿著遮蔽板103的長度延伸之細長、貫穿遮蔽板103之厚度方向的開口部107a。絕緣物104係細長，且位於遮蔽板103和框體101的上端之間，但是，遮蔽板103的背面係露出框體101的內部空間，藉由此開口部107a，框體101的內部空間成為連接於框體101的外部之真空槽10的內部空間。An opening portion 107a extending in the thickness direction of the shielding plate 103 extending along the length of the shielding plate 103 is formed at a central position in the width direction of the shielding plate 103. The insulator 104 is elongated and located between the shielding plate 103 and the upper end of the casing 101. However, the rear surface of the shielding plate 103 exposes the internal space of the casing 101, whereby the internal space of the casing 101 becomes the opening 107a. The internal space of the vacuum chamber 10 connected to the outside of the casing 101.
於遮蔽板103上的開口部107a之兩側位置，沿著開口部107a的長邊方向分別配置有細長的捕捉磁鐵部1051 、1052 。The elongated capturing magnet portions 105 1 and 105 2 are disposed along the longitudinal direction of the opening 107 a at positions on both sides of the opening 107 a of the shielding plate 103 .
即二個捕捉磁鐵部1051 、1052 係沿著其長邊中的一邊之側面被配置於接近開口部107a之位置，沿著與其平行之另一長邊之側面係被配置於遠離開口部107a之位置。That is, the two capturing magnet portions 105 1 and 105 2 are disposed at positions closer to the opening portion 107a along the side surface of one of the long sides, and are disposed away from the opening portion along the side surface of the other long side parallel thereto. 107a location.
此捕捉磁鐵部1051 、1052 可以細長永久磁鐵構成，也可將小的永久磁鐵予以細長地加以排列。另外，也可以電磁鐵來構成。The capturing magnet portions 105 1 and 105 2 may be formed of elongated permanent magnets, or small permanent magnets may be elongated and arranged. Alternatively, it may be constituted by an electromagnet.
總之，被配置於開口部107a的兩側之二個捕捉磁鐵部1051 、1052 之中，一方的捕捉磁鐵部1051 之N極係沿著長邊方向的一側面而形成，於另一方之捕捉磁鐵部1052 中，至少與其相反的磁極(S極)為沿著長邊方向之一側面而形成。In other words, among the two capturing magnet portions 105 1 and 105 2 disposed on both sides of the opening portion 107a, the N-pole of one of the capturing magnet portions 105 1 is formed along one side surface in the longitudinal direction, and the other side is formed. At least the magnetic pole (S pole) opposite to the capturing magnet portion 105 2 is formed along one side surface in the longitudinal direction.
二個之捕捉磁鐵部1051 、1052 係分別被配置於N極與S極朝向開口部107a之側面，因此，藉由開口部107a兩側之捕捉磁鐵部1051 、1052 ，來夾住開口部107a，使相互不同極性的磁極面對面。Since the two capturing magnet portions 105 1 and 105 2 are disposed on the side faces of the N pole and the S pole facing the opening portion 107 a , the two capturing magnet portions 105 1 and 105 2 are sandwiched by the capturing magnet portions 105 1 and 105 2 on both sides of the opening portion 107 a . The opening 107a faces the magnetic poles of mutually different polarities.
藉此，於開口部107a之上方，且被以二個捕捉磁鐵部1051 、1052 之側面所夾住之區域，形成有延伸於和開口部107a的寬度方向平行(與長邊方向垂直)之方向的磁力線。此磁力線係和遮蔽板103的表面、靶122的表面略微平行。另外，此處，藉由將捕捉磁鐵部1051 、1052 配置於遮蔽板103的表面，而於框體101的外部形成磁場，但是，只要有對電漿形成保護，也可佩至於遮蔽板103的背面側，而於開口部107a之下方，且被以二個捕捉磁鐵部1051 、1052 的側面所夾住之區域形成磁力線。Thereby, the region sandwiched by the side faces of the two capturing magnet portions 105 1 and 105 2 is formed to extend parallel to the width direction of the opening portion 107a (perpendicular to the longitudinal direction) above the opening portion 107a. The magnetic field lines in the direction. This magnetic line of force is slightly parallel to the surface of the shield plate 103 and the surface of the target 122. Here, the magnetic field is formed on the outside of the casing 101 by arranging the capturing magnet portions 105 1 and 105 2 on the surface of the shielding plate 103. However, as long as the plasma is protected, the shielding plate can be worn. The back side of the 103 is formed below the opening 107a, and magnetic field lines are formed in a region sandwiched by the side faces of the two capturing magnet portions 105 1 and 105 2 .
進而，還可於開口部107a的側面配置第一、第二捕捉磁鐵部1051 、1052 ，於沿著開口部107a的長邊方向而面對之側面配置N極與S極。Further, the first and second capturing magnet portions 105 1 and 105 2 may be disposed on the side surface of the opening portion 107a, and the N pole and the S pole may be disposed on the side surface facing the longitudinal direction of the opening portion 107a.
總之，於包含開口部107a的內部之位置，且接近開口部107a之位置，來形成和遮蔽板103的表面略平行之包覆開口部107a的磁力線即可。In short, the magnetic field lines covering the opening portion 107a which are slightly parallel to the surface of the shielding plate 103 may be formed at a position including the inside of the opening portion 107a and close to the position of the opening portion 107a.
於各濺鍍源11~13之框體101分別連接有濺鍍氣體供給系統109，真空槽10的真空排氣系統25動作，各濺鍍源11~13的框體101之內部和真空槽10內部被一同真空排氣，在到達特定壓力後，藉由濺鍍氣體供給系統109而對成為真空環境之框體101內導入氬氣等之濺鍍氣體。A sputtering gas supply system 109 is connected to each of the frames 101 of the sputtering sources 11 to 13, and the vacuum evacuation system 25 of the vacuum chamber 10 operates, and the inside of the frame 101 of each of the sputtering sources 11 to 13 and the vacuum chamber 10 are provided. The inside is vacuum-exhausted together, and after reaching a specific pressure, a sputtering gas such as argon gas is introduced into the casing 101 which is a vacuum environment by the sputtering gas supply system 109.
然後，對靶122施加負電壓或交流電壓時，於框體101內部形成電漿，靶122的表面受到濺鍍，構成靶122的材料之濺鍍粒子從靶122表面被放出於框體101內。Then, when a negative voltage or an alternating voltage is applied to the target 122, a plasma is formed inside the casing 101, the surface of the target 122 is sputtered, and the sputter particles of the material constituting the target 122 are released from the surface of the target 122 into the casing 101. .
於框體101內部中，在遮蔽板103和靶122之間形成電場，於從靶122被放出之濺鍍粒子中，電荷/質量之值(電荷/質量比)為大的負離子與大部分的電子被遮蔽板103吸引，而射入遮蔽板103，成為流經接地電位與遮蔽板之間的電流。In the interior of the housing 101, an electric field is formed between the shielding plate 103 and the target 122. In the sputtering particles discharged from the target 122, the charge/mass value (charge/mass ratio) is a large negative ion and most of the negative ions. The electrons are attracted by the shield plate 103 and enter the shield plate 103 to become a current flowing between the ground potential and the shield plate.
於正離子與中性粒子、以及不射入遮蔽板103之電荷/質量比為小之負離子與電子中，朝向開口部107a而飛行者，則通過開口部107a，使能橫亙捕捉磁鐵部1051 、1052 所形成之磁力線。When the positive ions and the neutral particles and the negative ions and electrons which do not enter the shielding plate 103 have a small charge/mass ratio, the person flying toward the opening 107a passes through the opening 107a to enable the horizontally-capturing magnet portion 105 1 . , 105 2 formed magnetic lines of force.
此時，具有電荷之離子會藉由該磁力線，飛行方向彎曲，另外，電子則藉由磁力線而被捕捉，而射入捕捉磁鐵部1051 、1052 與遮蔽板103與真空槽10。At this time, the ions having electric charges are bent in the flying direction by the magnetic lines of force, and the electrons are captured by the magnetic lines of force, and are incident on the capturing magnet portions 105 1 and 105 2 and the shielding plate 103 and the vacuum chamber 10.
中性粒子不受到磁力線的影響而直直前進。薄膜形成對象物30移動於真空槽10的內部，使於開口部107a上且形成有有機薄膜之薄膜形成面朝向開口部107a，通過面對開口部107a之位置，直直前進且通過被以二個捕捉磁鐵部1051 、1052 的側面所夾住之區域的中性粒子，別於薄膜形成對象物30之薄膜形成面中，射入面對開口部107a之位置，於薄膜形成對象物30之有機薄膜表面成長濺鍍薄膜。Neutral particles go straight without being affected by magnetic lines of force. The film formation target 30 moves inside the vacuum chamber 10, and the film formation surface on which the organic thin film is formed on the opening 107a faces the opening 107a, and passes straight through the position facing the opening 107a, and passes through The neutral particles in the region sandwiched by the side faces of the capturing magnet portions 105 1 and 105 2 are incident on the film forming surface of the film forming object 30, and are incident on the surface facing the opening portion 107a. The organic film surface is sputtered.
因此，於薄膜形成對象物30的薄膜形成面，只有中性的濺鍍粒子射入，具有電荷之離子與電子並不射入，所以，有機薄膜不會受到帶電粒子所損傷。Therefore, only the neutral sputtering particles are incident on the film formation surface of the film formation object 30, and ions and electrons having electric charges are not incident, so that the organic film is not damaged by the charged particles.
各濺鍍源11~13雖係相同構造，但是，靶122可以配置以同一材料所構成之靶122，也可配置以不同材料構成之靶。薄膜形成對象物30如通過一至複數台的濺鍍源11~13上時，藉由從各濺鍍源11~13所放出之中性的濺鍍粒子，可形成濺鍍薄膜。在配置有不同材料之靶122時，可以層積不同種類之薄膜，例如，可以藉由最初通過之濺鍍源11，形成電子注入層，藉由之後通過的濺鍍源12、13而使形成電極膜。Although the sputtering sources 11 to 13 have the same structure, the target 122 may be provided with the target 122 made of the same material, or may be configured with targets made of different materials. When the film formation target 30 passes through one to a plurality of sputtering sources 11 to 13, a sputtering film can be formed by discharging the neutral sputtering particles from the respective sputtering sources 11 to 13. When the target 122 of different materials is disposed, different types of thin films may be laminated. For example, the electron injecting layer may be formed by the sputtering source 11 initially passed through the sputtering source 12, 13 which is subsequently passed. Electrode film.
以上說明之濺鍍源11~14，雖藉由施加對靶122為正電壓之遮蔽板103、捕捉磁鐵部1051 、1052 之兩方來使帶電粒子不到達薄膜形成對象物30，但是，即使任何其中一方都有其效果，係包含於本發明。In the sputtering source 11 to 14 described above, the charged particles do not reach the film formation object 30 by applying both the shielding plate 103 having the positive voltage to the target 122 and the capturing magnet portions 105 1 and 105 2 . Even if any one of them has an effect, it is included in the present invention.
另外，於以上說明之濺鍍源11~13中，於1台之濺鍍源11~13中，雖藉由細長的一個開口而形成一個之開口部107a，但是，如第3(a)、(b)之濺鍍源14所示般，也可使複數的開口131接近排列成為一列或複數列，來構成一個之開口部107b。第3(a)、(b)圖之開口131係排列成一列。Further, in the sputtering sources 11 to 13 described above, one of the sputtering sources 11 to 13 has one opening portion 107a formed by one elongated opening, but as in the third (a), Similarly to the sputtering source 14 of (b), the plurality of openings 131 may be arranged in a line or a plurality of rows to form one opening 107b. The openings 131 of the third (a) and (b) are arranged in a line.
另外，於前述之濺鍍源11~13中，靶部120雖被配置於框體101的底壁上，但是，本發明並不限定於此，也可以沿著長邊方向之側面而配置二個之靶部120。Further, in the sputtering sources 11 to 13, the target portion 120 is disposed on the bottom wall of the casing 101. However, the present invention is not limited thereto, and may be disposed along the side surface in the longitudinal direction. Target portion 120.
在此情形下，如第4圖之濺鍍源15般，可將沿著長邊方向的側面之二台的靶部120之靶122相互平行面對而配置。例如，也可朝向框體101的中心軸線。In this case, as in the sputtering source 15 of FIG. 4, the targets 122 of the target portions 120 along the side faces in the longitudinal direction can be arranged to face each other in parallel. For example, it is also possible to face the central axis of the frame 101.
另外，如第5圖之濺鍍源16般，於沿著長邊方向的側面之靶部120之外，更於底壁上配置靶122朝向開口部107a之靶部120。靶122之被濺鍍的面積如增加時，濺鍍粒子被放出更多，薄膜形成速度會提升。Further, as in the sputtering source 16 of Fig. 5, the target 122 is placed toward the target portion 120 of the opening portion 107a in addition to the target portion 120 along the side surface in the longitudinal direction. When the sputtered area of the target 122 is increased, the sputtered particles are released more, and the film formation speed is increased.
另外，於前述各實施例中，第一例之濺鍍源11~13、以及其他例之濺鍍源14、15，雖係將其全部配置於真空槽10的內部，但是，即使濺鍍源11~15之一部份突出於真空槽10的外部，開口部107a、107b朝向真空槽10的內部，由於被配置於真空槽10的關係，都包含於本發明之濺鍍裝置。Further, in the foregoing embodiments, the sputtering sources 11 to 13 of the first example and the sputtering sources 14 and 15 of the other examples are all disposed inside the vacuum chamber 10, but even the sputtering source One of the portions 11 to 15 protrudes outside the vacuum chamber 10, and the openings 107a and 107b face the inside of the vacuum chamber 10, and are disposed in the vacuum chamber 10, and are included in the sputtering apparatus of the present invention.
1．．．濺鍍裝置1. . . Sputtering device
13~16．．．濺鍍源13~16. . . Sputter source
101．．．框體101. . . framework
103．．．遮蔽板103. . . Masking board
104．．．絕緣物104. . . Insulator
1051 、1052 ．．．捕捉磁鐵105 1 , 105 2 . . . Catching magnet
107a、107b．．．開口部107a, 107b. . . Opening
108．．．濺鍍電源108. . . Sputter power supply
109．．．濺鍍氣體供給系統109. . . Sputter gas supply system
110．．．偏壓電源110. . . Bias power supply
120．．．靶部120. . . Target
121．．．靶支撐器121. . . Target support
122．．．靶122. . . target
123．．．磁控管放電用磁鐵123. . . Magnetron discharge magnet
第1圖係本發明之濺鍍裝置的一例。Fig. 1 is an example of a sputtering apparatus of the present invention.
第2(a)、(b)圖係本發明之濺鍍源的一例。The second (a) and (b) drawings are examples of the sputtering source of the present invention.
第3(a)、(b)圖係本發明之濺鍍源的其他例。The third (a) and (b) drawings are other examples of the sputtering source of the present invention.
第4圖係本發明之濺鍍源的其他例。Fig. 4 is another example of the sputtering source of the present invention.
第5圖係本發明之濺鍍源的其他例。Fig. 5 is another example of the sputtering source of the present invention.
11~13．．．濺鍍源11~13. . . Sputter source
101．．．框體101. . . framework
103．．．遮蔽板103. . . Masking board
104．．．絕緣物104. . . Insulator
1051 、1052 ．．．捕捉磁鐵部105 1 , 105 2 . . . Capturing magnet
107a．．．開口部107a. . . Opening
108．．．濺鍍電源108. . . Sputter power supply
109．．．濺鍍氣體供給系統109. . . Sputter gas supply system
110．．．偏壓電源110. . . Bias power supply
120．．．靶部120. . . Target
121．．．靶支撐器121. . . Target support
122．．．靶122. . . target
123．．．磁控管放電用磁鐵123. . . Magnetron discharge magnet
S．．．S極S. . . S pole
N．．．N極N. . . N pole
Claims (15)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2004378688 | 2004-12-28 |
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| TW200626738A TW200626738A (en) | 2006-08-01 |
| TWI401329B true TWI401329B (en) | 2013-07-11 |
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| TW094145890A TWI401329B (en) | 2004-12-28 | 2005-12-22 | Sputtering source, sputtering apparatus, and film manufacturing method |
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| JP (1) | JP4865570B2 (en) |
| KR (1) | KR101255375B1 (en) |
| CN (1) | CN100557071C (en) |
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| WO (1) | WO2006070633A1 (en) |
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| JP4531599B2 (en) * | 2005-03-17 | 2010-08-25 | 株式会社アルバック | Sputtering source, sputtering equipment |
| JP2009138230A (en) * | 2007-12-06 | 2009-06-25 | Ulvac Japan Ltd | Sputtering system and film deposition method |
| TWI512791B (en) * | 2013-08-26 | 2015-12-11 | Au Optronics Corp | Method for manufacturing patterned layer and method for manufacturing electrochromic device |
| JP7138504B2 (en) * | 2018-07-31 | 2022-09-16 | キヤノントッキ株式会社 | Film forming apparatus and electronic device manufacturing method |
| CN115404449B (en) * | 2021-05-28 | 2023-12-01 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
| EP0521045B1 (en) * | 1990-03-17 | 1997-11-12 | Teer Coatings Limited | Magnetron sputter ion plating |
| US5772858A (en) * | 1995-07-24 | 1998-06-30 | Applied Materials, Inc. | Method and apparatus for cleaning a target in a sputtering source |
| TW413726B (en) * | 1999-11-20 | 2000-12-01 | Prec Instr Dev Ct | Method for monitoring thickness uniformity of films based on spectroscopic measurement |
| US6193854B1 (en) * | 1999-01-05 | 2001-02-27 | Novellus Systems, Inc. | Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source |
| US20030164288A1 (en) * | 2002-03-02 | 2003-09-04 | Shinzo Onishi | Magnetron sputtering target for magnetic materials |
| TW589393B (en) * | 2000-05-18 | 2004-06-01 | Prec Instr Dev Ct Nat | An improved process for deposition a thin film by sputtering |
| TW593725B (en) * | 2002-04-30 | 2004-06-21 | Prodisc Technology Inc | Coating device and method |
| US20040149565A1 (en) * | 2001-06-12 | 2004-08-05 | Unaxis Balzers Limited | Method for manufacturing a workpiece using a magnetron sputter source |
| TWI223672B (en) * | 2000-10-26 | 2004-11-11 | Prec Instr Dev Ct Nat | An improved process of ion-assistance sputtering deposition |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6438996A (en) * | 1987-08-04 | 1989-02-09 | Japan Res Dev Corp | Manufacture of thin film el element |
| JPS6438995A (en) * | 1987-08-04 | 1989-02-09 | Japan Res Dev Corp | Manufacture of thin film el element |
| JPH01139762A (en) * | 1987-11-25 | 1989-06-01 | Matsushita Electric Ind Co Ltd | Sputtering apparatus |
| JPH03243761A (en) * | 1990-02-22 | 1991-10-30 | Fuji Photo Film Co Ltd | Sputtering device |
| JP3719797B2 (en) * | 1996-11-08 | 2005-11-24 | 株式会社アルバック | Method for forming conductive thin film on organic thin film surface |
| JPH10158821A (en) * | 1996-11-27 | 1998-06-16 | Tdk Corp | Apparatus for production of organic el light emitting element and method therefor |
| JP3884814B2 (en) * | 1997-02-13 | 2007-02-21 | Ｔｄｋ株式会社 | Manufacturing apparatus and method for organic EL light emitting device |
| JP2002339061A (en) | 2001-05-16 | 2002-11-27 | Canon Inc | Thin film depositing method |
| JP4423589B2 (en) * | 2003-11-07 | 2010-03-03 | 富士電機ホールディングス株式会社 | Sputtering apparatus, sputtering method, organic EL light emitting device manufacturing apparatus, and organic EL light emitting device manufacturing method |
-
2005
- 2005-12-19 KR KR1020067027766A patent/KR101255375B1/en active IP Right Grant
- 2005-12-19 CN CNB2005800256784A patent/CN100557071C/en not_active Expired - Fee Related
- 2005-12-19 WO PCT/JP2005/023276 patent/WO2006070633A1/en not_active Application Discontinuation
- 2005-12-19 JP JP2006550687A patent/JP4865570B2/en not_active Expired - Fee Related
- 2005-12-22 TW TW094145890A patent/TWI401329B/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
| EP0521045B1 (en) * | 1990-03-17 | 1997-11-12 | Teer Coatings Limited | Magnetron sputter ion plating |
| US5772858A (en) * | 1995-07-24 | 1998-06-30 | Applied Materials, Inc. | Method and apparatus for cleaning a target in a sputtering source |
| US6193854B1 (en) * | 1999-01-05 | 2001-02-27 | Novellus Systems, Inc. | Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source |
| TW413726B (en) * | 1999-11-20 | 2000-12-01 | Prec Instr Dev Ct | Method for monitoring thickness uniformity of films based on spectroscopic measurement |
| TW589393B (en) * | 2000-05-18 | 2004-06-01 | Prec Instr Dev Ct Nat | An improved process for deposition a thin film by sputtering |
| TWI223672B (en) * | 2000-10-26 | 2004-11-11 | Prec Instr Dev Ct Nat | An improved process of ion-assistance sputtering deposition |
| US20040149565A1 (en) * | 2001-06-12 | 2004-08-05 | Unaxis Balzers Limited | Method for manufacturing a workpiece using a magnetron sputter source |
| US20030164288A1 (en) * | 2002-03-02 | 2003-09-04 | Shinzo Onishi | Magnetron sputtering target for magnetic materials |
| TW593725B (en) * | 2002-04-30 | 2004-06-21 | Prodisc Technology Inc | Coating device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4865570B2 (en) | 2012-02-01 |
| JPWO2006070633A1 (en) | 2008-06-12 |
| CN1993491A (en) | 2007-07-04 |
| TW200626738A (en) | 2006-08-01 |
| WO2006070633A1 (en) | 2006-07-06 |
| CN100557071C (en) | 2009-11-04 |
| KR20070099414A (en) | 2007-10-09 |
| KR101255375B1 (en) | 2013-04-17 |
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