TW200626738A - Sputtering source, sputtering system, method for forming thin film - Google Patents

Sputtering source, sputtering system, method for forming thin film

Info

Publication number
TW200626738A
TW200626738A TW094145890A TW94145890A TW200626738A TW 200626738 A TW200626738 A TW 200626738A TW 094145890 A TW094145890 A TW 094145890A TW 94145890 A TW94145890 A TW 94145890A TW 200626738 A TW200626738 A TW 200626738A
Authority
TW
Taiwan
Prior art keywords
thin film
sputtering
opening
shielding plate
charged particles
Prior art date
Application number
TW094145890A
Other languages
Chinese (zh)
Other versions
TWI401329B (en
Inventor
Toshio Negishi
Masahiro Ito
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200626738A publication Critical patent/TW200626738A/en
Application granted granted Critical
Publication of TWI401329B publication Critical patent/TWI401329B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Abstract

A sputter film formed on the surface of an organic thin film without causing any damage thereon. Opening of the housing (101) of sputter sources (11-13) is closed with a shielding plate (103) and trap magnets (1051, 1052) are arranged on the opposite sides of the opening (107a). A target section (120) is arranged in the housing (101) and at the time of sputtering, the shielding plate (103) is connected with the earth potential, negatively charged particles such as electrons are entered into the shielding plate (103), and flying direction of the charged particles passed through the opening (107a) is curved by a magnetic field formed by the trap magnets (1051, 1052). Since the charged particles do not impinge on the surface of an object whereupon a film is to be formed when the object traverses above the sputter sources (11-13), damage on the organic thin film is suppressed.
TW094145890A 2004-12-28 2005-12-22 Sputtering source, sputtering apparatus, and film manufacturing method TWI401329B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004378688 2004-12-28

Publications (2)

Publication Number Publication Date
TW200626738A true TW200626738A (en) 2006-08-01
TWI401329B TWI401329B (en) 2013-07-11

Family

ID=36614752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145890A TWI401329B (en) 2004-12-28 2005-12-22 Sputtering source, sputtering apparatus, and film manufacturing method

Country Status (5)

Country Link
JP (1) JP4865570B2 (en)
KR (1) KR101255375B1 (en)
CN (1) CN100557071C (en)
TW (1) TWI401329B (en)
WO (1) WO2006070633A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531599B2 (en) * 2005-03-17 2010-08-25 株式会社アルバック Sputtering source, sputtering equipment
JP2009138230A (en) * 2007-12-06 2009-06-25 Ulvac Japan Ltd Sputtering system and film deposition method
TWI512791B (en) * 2013-08-26 2015-12-11 Au Optronics Corp Method for manufacturing patterned layer and method for manufacturing electrochromic device
JP7138504B2 (en) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 Film forming apparatus and electronic device manufacturing method
CN115404449B (en) * 2021-05-28 2023-12-01 鑫天虹(厦门)科技有限公司 Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
JPS6438996A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPS6438995A (en) * 1987-08-04 1989-02-09 Japan Res Dev Corp Manufacture of thin film el element
JPH01139762A (en) * 1987-11-25 1989-06-01 Matsushita Electric Ind Co Ltd Sputtering apparatus
JPH03243761A (en) * 1990-02-22 1991-10-30 Fuji Photo Film Co Ltd Sputtering device
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
JP3719797B2 (en) * 1996-11-08 2005-11-24 株式会社アルバック Method for forming conductive thin film on organic thin film surface
JPH10158821A (en) * 1996-11-27 1998-06-16 Tdk Corp Apparatus for production of organic el light emitting element and method therefor
JP3884814B2 (en) * 1997-02-13 2007-02-21 Ｔｄｋ株式会社 Manufacturing apparatus and method for organic EL light emitting device
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
TW413726B (en) * 1999-11-20 2000-12-01 Prec Instr Dev Ct Method for monitoring thickness uniformity of films based on spectroscopic measurement
TW589393B (en) * 2000-05-18 2004-06-01 Prec Instr Dev Ct Nat An improved process for deposition a thin film by sputtering
TWI223672B (en) * 2000-10-26 2004-11-11 Prec Instr Dev Ct Nat An improved process of ion-assistance sputtering deposition
JP2002339061A (en) * 2001-05-16 2002-11-27 Canon Inc Thin film depositing method
TWI229138B (en) * 2001-06-12 2005-03-11 Unaxis Balzers Ag Magnetron-sputtering source
US6623610B1 (en) * 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method
JP4423589B2 (en) * 2003-11-07 2010-03-03 富士電機ホールディングス株式会社 Sputtering apparatus, sputtering method, organic EL light emitting device manufacturing apparatus, and organic EL light emitting device manufacturing method

Also Published As

Publication number Publication date
CN1993491A (en) 2007-07-04
JP4865570B2 (en) 2012-02-01
JPWO2006070633A1 (en) 2008-06-12
WO2006070633A1 (en) 2006-07-06
KR101255375B1 (en) 2013-04-17
CN100557071C (en) 2009-11-04
KR20070099414A (en) 2007-10-09
TWI401329B (en) 2013-07-11

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