TW200716776A - Spattering apparatus and film forming method - Google Patents

Spattering apparatus and film forming method

Info

Publication number
TW200716776A
TW200716776A TW095138097A TW95138097A TW200716776A TW 200716776 A TW200716776 A TW 200716776A TW 095138097 A TW095138097 A TW 095138097A TW 95138097 A TW95138097 A TW 95138097A TW 200716776 A TW200716776 A TW 200716776A
Authority
TW
Taiwan
Prior art keywords
film forming
forming method
targets
spattering apparatus
move
Prior art date
Application number
TW095138097A
Other languages
Chinese (zh)
Other versions
TWI352131B (en
Inventor
Satoru Takasawa
Sadayuki Ukishima
Noriaki Tani
Satoru Ishibashi
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200716776A publication Critical patent/TW200716776A/en
Application granted granted Critical
Publication of TWI352131B publication Critical patent/TWI352131B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A sputtering apparatus having a high target use efficiency. The sputtering apparatus (1) is provided with moving means (28a, 28b), and first and second magnet members (23a, 23b) are movably constituted within a plane parallel to the surfaces of first and second targets (21a, 21b) by moving means (28a, 28b). When the first and the second magnet members (23a, 23b) move, magnetic field lines and high erosion areas on the surfaces of the first and the second targets (21a, 21b) also move. Therefore, large areas on the surfaces of the first and the second targets (21a, 21b) are sputtered.
TW095138097A 2005-10-18 2006-10-16 Spattering apparatus and film forming method TWI352131B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303490 2005-10-18

Publications (2)

Publication Number Publication Date
TW200716776A true TW200716776A (en) 2007-05-01
TWI352131B TWI352131B (en) 2011-11-11

Family

ID=37962339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138097A TWI352131B (en) 2005-10-18 2006-10-16 Spattering apparatus and film forming method

Country Status (7)

Country Link
US (1) US8585872B2 (en)
EP (1) EP1939321B1 (en)
JP (1) JP4763711B2 (en)
KR (1) KR100984965B1 (en)
CN (1) CN101180417B (en)
TW (1) TWI352131B (en)
WO (1) WO2007046243A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4877058B2 (en) * 2007-05-08 2012-02-15 パナソニック株式会社 Opposing target sputtering apparatus and method
US20100018855A1 (en) * 2008-07-24 2010-01-28 Seagate Technology Llc Inline co-sputter apparatus
US20110220494A1 (en) * 2010-03-11 2011-09-15 Peijun Ding Methods and apparatus for magnetron metallization for semiconductor fabrication
CN102352486A (en) * 2011-11-16 2012-02-15 东莞市润华光电有限公司 Magnetron sputtering target with adjustable magnetic shoe
CN105555990B (en) 2013-07-17 2018-01-09 先进能源工业公司 The system and method that target consumption is balanced in pulse dual magnetron sputters (DMS) technique
KR102182674B1 (en) * 2013-12-20 2020-11-26 삼성디스플레이 주식회사 Sputtering apparatus
KR102138598B1 (en) * 2016-05-23 2020-07-28 가부시키가이샤 알박 Film formation method and sputtering device
CN110224066A (en) * 2019-05-14 2019-09-10 浙江大学 A kind of translucent perovskite solar battery of no auxiliary layer and preparation method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57158380A (en) 1981-03-26 1982-09-30 Teijin Ltd Counter target type sputtering device
JPS61183466A (en) * 1985-02-12 1986-08-16 Teijin Ltd Counter target type sputtering device
JPS61243168A (en) * 1985-04-19 1986-10-29 Hitachi Ltd Opposed target type sputtering device
JPS63121657A (en) * 1986-11-10 1988-05-25 Hitachi Maxell Ltd Vacuum film forming device
JPH01162652A (en) 1987-12-16 1989-06-27 Canon Inc Image recording device
JPH036371A (en) * 1989-06-02 1991-01-11 Osaka Shinku Kiki Seisakusho:Kk Opposed target-type sputtering device
JP2970317B2 (en) * 1993-06-24 1999-11-02 松下電器産業株式会社 Sputtering apparatus and sputtering method
JPH10102247A (en) * 1996-10-02 1998-04-21 Matsushita Electric Ind Co Ltd Sputtering device and method
SG90171A1 (en) * 2000-09-26 2002-07-23 Inst Data Storage Sputtering device
JP2002146529A (en) * 2000-11-07 2002-05-22 Aisin Seiki Co Ltd Magnetron sputtering system, and method of thin film deposition by magnetron sputtering
JP4396163B2 (en) 2003-07-08 2010-01-13 株式会社デンソー Organic EL device
KR100585578B1 (en) * 2003-09-30 2006-06-07 닛뽕빅터 가부시키가이샤 Magnetron sputtering device
JP5026087B2 (en) * 2005-07-19 2012-09-12 株式会社アルバック Sputtering apparatus, transparent conductive film manufacturing method

Also Published As

Publication number Publication date
JP4763711B2 (en) 2011-08-31
KR100984965B1 (en) 2010-10-04
TWI352131B (en) 2011-11-11
KR20080033150A (en) 2008-04-16
JPWO2007046243A1 (en) 2009-04-23
EP1939321B1 (en) 2013-05-01
CN101180417B (en) 2010-12-08
WO2007046243A1 (en) 2007-04-26
US8585872B2 (en) 2013-11-19
EP1939321A1 (en) 2008-07-02
US20080210547A1 (en) 2008-09-04
EP1939321A4 (en) 2012-04-04
CN101180417A (en) 2008-05-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees