JPS61243168A - Opposed target type sputtering device - Google Patents
Opposed target type sputtering deviceInfo
- Publication number
- JPS61243168A JPS61243168A JP8243885A JP8243885A JPS61243168A JP S61243168 A JPS61243168 A JP S61243168A JP 8243885 A JP8243885 A JP 8243885A JP 8243885 A JP8243885 A JP 8243885A JP S61243168 A JPS61243168 A JP S61243168A
- Authority
- JP
- Japan
- Prior art keywords
- targets
- magnetic field
- target
- coils
- magnets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、対向ターゲット方式スパッタ装置に係り１％
釦メタ−ゲット偏摩耗防止に好適な磁界印加方法に関す
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a facing target type sputtering apparatus.
The present invention relates to a method of applying a magnetic field suitable for preventing uneven wear of button metal targets.
従来、対向ターゲット方式スパッタ装置については、応
用物理、第４８巻、第６号（１９７９年）における直性
、山中による”新しいスノ（ツタ膜形成技術の動向”と
題する文献において論じられている。Conventionally, the facing target type sputtering apparatus has been discussed in a document entitled "New Suno (Trends in Ivy Film Forming Technology)" by Naoko and Yamanaka in Applied Physics, Vol. 48, No. 6 (1979).
従来の対向ターゲット方式スパッタ装置は。Conventional facing target sputtering equipment.
上記文献忙記載のように、対向した２枚のターゲットの
面側に各々１個の磁界印加用コイルを設けていた。しか
し、この構造では、印加された磁界はターゲット表面、
特にスパッタが進むにつれてターゲット中心部の磁界が
強くなり。As described in the above-mentioned literature, one magnetic field applying coil was provided on each side of two opposing targets. However, in this structure, the applied magnetic field is
In particular, as sputtering progresses, the magnetic field at the center of the target becomes stronger.
高エネルギー電子が中心部に集中し、中心部のみスパッ
タされ偏摩耗が生じる点について配慮されていない。No consideration is given to the fact that high-energy electrons concentrate in the center and sputter only in the center, causing uneven wear.
本発明の目的は、ターゲット表面、特に中心部への磁界
集中をなくシ、ターゲットの偏摩耗を防止できる磁界印
加方法を提供するにある。An object of the present invention is to provide a method for applying a magnetic field that eliminates magnetic field concentration on the target surface, particularly at the center, and prevents uneven wear of the target.
従来、対向ターゲット方式スパッタ装置では。 Conventionally, facing target type sputtering equipment.
ターゲットホルダに強磁性体を使用し、ターゲツト面全
体に磁界を印加していたため、スバツタリングが進むに
つれて、第１図の３に示すような磁界分布となり、中心
部の磁界が周囲に比較シテ強くなり、中心部に高エネル
ギー電子が集中し、中心部近傍のみスパッタされ偏摩耗
が生じていた。Since a ferromagnetic material was used for the target holder and a magnetic field was applied to the entire target surface, as the splattering progressed, the magnetic field distribution became as shown in 3 in Figure 1, and the magnetic field at the center became stronger than the surrounding area. , high-energy electrons were concentrated in the center and sputtered only near the center, causing uneven wear.
この偏摩耗は、ターゲット中心部の磁界が周辺部より強
いために生ずるものであり、ターゲツト面上での磁界分
布を均一にすることにより偏摩耗は防げる。そこで磁界
分布を均一にできる方法を種々検討した結果、磁界印加
方法により磁界分布を均一にできることが判明した。This uneven wear occurs because the magnetic field at the center of the target is stronger than at the periphery, and uneven wear can be prevented by making the magnetic field distribution uniform on the target surface. As a result of investigating various methods for making the magnetic field distribution uniform, it was found that the magnetic field distribution could be made uniform by the magnetic field application method.
この発明は、第１図の４に示すような磁界分布となるよ
うに、ターゲット１０両側面に磁界印加用コイル２を設
けることを特徴としている。The present invention is characterized in that magnetic field applying coils 2 are provided on both sides of the target 10 so as to obtain a magnetic field distribution as shown in 4 in FIG.
以下２本発明の一実施例を図面により説明する。図は本
発明の対向ターゲット方式スパッタ装置の概略図である
。Two embodiments of the present invention will be described below with reference to the drawings. The figure is a schematic diagram of a facing target type sputtering apparatus according to the present invention.
本実施例の構成は、ターゲラ） １ 、１’をスパッタ
される面を互いに平行に配置するよ°うに、ターゲット
ホルダ６．６′に固定し、ターゲット１゜１の側面をシ
ールド５．５′で覆い、さらにターゲット１．１の両側
面に、Ｓ極、Ｎ極を相対させて磁界印加用磁石またはコ
イル２．２′を配置してなる。The configuration of this embodiment is that the target holders 1 and 1' are fixed to a target holder 6.6' so that their surfaces to be sputtered are arranged parallel to each other, and the side surfaces of the targets 1 and 1' are covered with a shield 5.5'. Further, on both sides of the target 1.1, magnetic field applying magnets or coils 2.2' are arranged with the S and N poles facing each other.
スパッタ方法はターゲラ−） １ 、１’に電圧を印加
し、磁界印加用磁石またはコイル２．２’＆Ｃより磁界
を印加せしめ、対向ターゲツト面の間の空間に高エネル
ギー電子を閉じ込め、スパッタガスのイオン化を促進し
、ターゲットをスパッタすることにより基板７に膜を形
成する。The sputtering method is to apply a voltage to targeters 1 and 1', apply a magnetic field from a magnetic field applying magnet or coil 2, 2', and confine high-energy electrons in the space between the opposing target surfaces, and release the sputtering gas. A film is formed on the substrate 7 by promoting ionization and sputtering the target.
本実施例によれば、印加磁界用磁石またはコイル５，５
がターゲット側面に相対して設けられており、該磁石ま
たはコイルのＮ−Ｓ極間で磁界が最も強くなり、高エネ
ルギー電子が閉じこめられるとともに、ターゲツト面全
体の磁界分布が第１図のように均一にできるため、ター
ゲットの偏摩耗を防止できる効果がある。According to this embodiment, the applied magnetic field magnets or coils 5, 5
is provided facing the side of the target, and the magnetic field is strongest between the north and south poles of the magnet or coil, trapping high-energy electrons and creating a magnetic field distribution over the entire target surface as shown in Figure 1. Since it can be done uniformly, it has the effect of preventing uneven wear of the target.
本発明の他の実施例を第３図に示す。磁界印加用磁石２
，２′を金属材料とし、磁界印加用磁石２，２′とシー
ルド５，５′を兼用させることにより、磁界印加用磁石
２，２をよりターゲットに近づけることにより、磁界強
度を均一に強くできるため、スパッタを行う時に有利釦
なる。Another embodiment of the invention is shown in FIG. Magnet 2 for applying magnetic field
, 2' are made of metal material, and the magnetic field applying magnets 2, 2' serve as the shields 5, 5'. By bringing the magnetic field applying magnets 2, 2 closer to the target, the magnetic field strength can be uniformly increased. Therefore, it is advantageous when performing sputtering.
本発明によれば、ターゲツト面上の磁界分布を均一にで
きるので、第４図（ａ）Ｋ示すよう釦。According to the present invention, the magnetic field distribution on the target surface can be made uniform, so the button as shown in FIG. 4(a)K is pressed.
ターゲットが均一にスパッタされ、第４図（ｂ） Ｋ示
す中心部のみをスパッタされるターゲットに比較し、約
３倍の寿命を有する効果がある。The target is sputtered uniformly and has an effect of having a life approximately three times longer than that of a target sputtered only at the center as shown in FIG. 4(b).
第１図は本発明を説明するための磁界の分布図、第２図
は本発明の一実施例の要部構造図。
第３図は他の実施例の構造図、第４図はターゲットの摩
耗比較図である。
１．１・・・ターゲット。
２．２・・・磁界用磁石又はコイル。
３．４・・・磁界分布、 ５・・・シールド。
痔 ノ ｂピ１
第２図FIG. 1 is a magnetic field distribution diagram for explaining the present invention, and FIG. 2 is a structural diagram of main parts of an embodiment of the present invention. FIG. 3 is a structural diagram of another embodiment, and FIG. 4 is a comparison diagram of target wear. 1.1...Target. 2.2...Magnet or coil for magnetic field. 3.4...Magnetic field distribution, 5...Shield. Hemorrhoids b pi 1 Figure 2
Claims (1)
れるターゲットと該ターゲットの周囲を被覆するシール
ドと磁界印加用磁石またはコイルを有する対向ターゲッ
ト方式スパッタ装置において、磁界印加用磁石またはコ
イルを対向する両ターゲットの両側面に配置せしめたこ
とを特徴とする対向ターゲット方式スパッタ装置。1. In a facing target type sputtering apparatus that has targets arranged in parallel with their sputtered surfaces facing each other, a shield surrounding the targets, and a magnet or coil for applying a magnetic field, the magnets or coils for applying a magnetic field are placed opposite each other. A facing target type sputtering apparatus characterized in that targets are placed on both sides of both targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8243885A JPS61243168A (en) | 1985-04-19 | 1985-04-19 | Opposed target type sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8243885A JPS61243168A (en) | 1985-04-19 | 1985-04-19 | Opposed target type sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61243168A true JPS61243168A (en) | 1986-10-29 |
Family
ID=13774547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8243885A Pending JPS61243168A (en) | 1985-04-19 | 1985-04-19 | Opposed target type sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61243168A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5099790A (en) * | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| WO2007046243A1 (en) * | 2005-10-18 | 2007-04-26 | Ulvac, Inc. | Sputtering apparatus and film forming method |
| WO2007046244A1 (en) * | 2005-10-18 | 2007-04-26 | Ulvac, Inc. | Sputtering apparatus |
-
1985
- 1985-04-19 JP JP8243885A patent/JPS61243168A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5099790A (en) * | 1988-07-01 | 1992-03-31 | Canon Kabushiki Kaisha | Microwave plasma chemical vapor deposition apparatus |
| WO2007046243A1 (en) * | 2005-10-18 | 2007-04-26 | Ulvac, Inc. | Sputtering apparatus and film forming method |
| WO2007046244A1 (en) * | 2005-10-18 | 2007-04-26 | Ulvac, Inc. | Sputtering apparatus |
| JPWO2007046243A1 (en) * | 2005-10-18 | 2009-04-23 | 株式会社アルバック | Sputtering apparatus and film forming method |
| JP4717887B2 (en) * | 2005-10-18 | 2011-07-06 | 株式会社アルバック | Sputtering equipment |
| JP4763711B2 (en) * | 2005-10-18 | 2011-08-31 | 株式会社アルバック | Sputtering apparatus and film forming method |
| US8585872B2 (en) | 2005-10-18 | 2013-11-19 | Ulvac, Inc. | Sputtering apparatus and film-forming processes |
| US8679306B2 (en) | 2005-10-18 | 2014-03-25 | Ulvac, Inc. | Sputtering apparatus |
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