CN115404449B - Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof - Google Patents
Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof Download PDFInfo
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- CN115404449B CN115404449B CN202110594752.5A CN202110594752A CN115404449B CN 115404449 B CN115404449 B CN 115404449B CN 202110594752 A CN202110594752 A CN 202110594752A CN 115404449 B CN115404449 B CN 115404449B
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- 238000009826 distribution Methods 0.000 title claims abstract description 48
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000013077 target material Substances 0.000 claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000004378 air conditioning Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 21
- 239000010409 thin film Substances 0.000 description 21
- 230000008021 deposition Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
Abstract
The invention provides a thin film deposition device capable of adjusting magnetic field distribution, which comprises a reaction cavity, a bearing disc, a target material, a magnetic device, a fixing unit and at least one shielding unit. The bearing plate and the target are positioned in the accommodating space of the reaction cavity, wherein the bearing plate is used for bearing at least one substrate, and one surface of the target faces the bearing plate and the substrate. The magnetic force device is positioned on the other surface of the target and forms a magnetic field in the accommodating space of the reaction cavity through the target. The fixing unit is arranged between the magnetic device and the target and comprises at least one arrangement space. The shielding unit is arranged in the arrangement space of the fixing unit, is made of conductive materials and is used for shielding part of magnetic force generated by the magnetic force device so as to adjust the magnetic field distribution in the accommodating space.
Description
Technical Field
The invention relates to a thin film deposition device capable of adjusting magnetic field distribution, which can finely adjust the magnetic field distribution in a containing space and can effectively improve the uniformity of the thickness of a thin film deposited on the surface of a substrate.
Background
Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are common thin film deposition equipment and are commonly used in the manufacture of integrated circuits, light emitting diodes, and displays.
The deposition equipment mainly comprises a cavity and a substrate bearing plate, wherein the substrate bearing plate is positioned in the cavity and is used for bearing at least one substrate. Taking physical vapor deposition as an example, a target needs to be disposed in the chamber, wherein the target faces the substrate on the substrate carrier plate. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber to bias the target and the substrate carrier plate, respectively.
The inert gas in the cavity forms ionized inert gas under the action of the high-voltage electric field, and the ionized inert gas is attracted by the bias voltage on the target material to bombard the target material. Target atoms or molecules sputtered from the target are attracted by the bias on the substrate carrier plate and deposited on the surface of the substrate to form a thin film on the surface of the substrate.
Generally, a plurality of magnets are disposed above the target, wherein the magnets are rotatable relative to the target and form a magnetic field below the target. The charged particles under the target are displaced in a spiral manner by the magnetic field of the magnet. Therefore, the probability of collision with gas atoms can be greatly improved, and the sputtering rate, the film deposition efficiency and the uniformity are further improved.
Disclosure of Invention
In performing thin film deposition processes, it has been a goal of various process plants to increase the uniformity of the thickness of the thin film on the substrate. The invention provides a thin film deposition device capable of adjusting magnetic field distribution, which is mainly characterized in that at least one fixing unit is arranged between a magnetic device and a target, wherein the fixing unit comprises at least one arrangement space. At least one shielding unit is arranged in the arrangement space of the fixing unit and is positioned between part of the magnetic force device and part of the target material so as to adjust the magnetic field distribution in the accommodating space.
An object of the present invention is to provide a thin film deposition apparatus capable of adjusting magnetic field distribution, which mainly includes a reaction chamber, a carrying plate, a target, a magnetic device, a fixing unit and at least one shielding unit. The target and the bearing plate are positioned in the accommodating space of the reaction cavity, wherein one surface of the target faces the bearing plate and the substrate borne by the bearing plate. The magnetic force device is arranged on the other surface of the target and forms a magnetic field in the accommodating space through the target. The fixing unit is arranged between the magnetic device and the target material, and can set at least one shielding unit in the setting space of the fixing unit. The shielding unit is used for shielding part of the magnetic field generated by the magnetic force device so as to form a uniform magnetic field in the accommodating space of the reaction cavity and be beneficial to forming a film with uniform thickness on the surface of the substrate.
The fixing unit is made of a material which does not have conductive property, so that the magnetic field generated by the magnetic force device is not shielded. The fixing unit may be disposed on the surface of the target or may be a cavity fixed above the target without directly contacting the target in practical use. The setting of the fixing unit is beneficial to the user to assemble or disassemble the shielding unit or adjust the magnetic field area shielded by the shielding unit, thereby being beneficial to improving the convenience in use.
An object of the present invention is to provide a thin film deposition apparatus and a magnetic field adjusting device capable of adjusting magnetic field distribution, which mainly includes a reaction chamber, a carrying plate, a target, a back plate, a magnetic device, a fixing unit and at least one shielding unit. The backboard is connected with the reaction cavity and forms a containing space between the backboard and the reaction cavity. The bearing disc and the target are positioned in the accommodating space, wherein the target is arranged on one surface of the backboard, and the magnetic force device is positioned on the other surface of the backboard. The fixing unit is positioned between the magnetic device and the backboard, wherein the shielding unit is arranged in the arrangement space of the fixing unit and is used for shielding part of the magnetic field generated by the magnetic device so as to adjust the magnetic field distribution formed by the magnetic device in the accommodating space.
In order to achieve the above object, the present invention provides a thin film deposition apparatus capable of adjusting magnetic field distribution, comprising: a reaction cavity, which comprises a containing space; the bearing plate is positioned in the accommodating space and is used for bearing at least one substrate; the target material is connected in the accommodating space of the reaction cavity and comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material, and the first surface of the target material faces the bearing disc; the magnetic force device is positioned in the direction of the second surface of the target; the fixing unit is positioned between the magnetic device and the target and comprises at least one setting space; and at least one shielding unit arranged in the arrangement space of the fixing unit, so that the shielding unit is positioned between part of the magnetic force device and part of the target material and shields part of the magnetic field generated by the magnetic force device, wherein the shielding unit comprises a conductive material.
The invention provides a magnetic field adjusting device, which is suitable for a thin film deposition device and comprises: the target comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target; the magnetic force device is positioned in the direction of the second surface of the target; the fixing unit is positioned between the magnetic device and the target and comprises at least one setting space; and at least one shielding unit arranged in the arrangement space of the fixing unit, so that the shielding unit is positioned between a part of the magnetic force device and a part of the target material and shields the part of the target material and the part of the magnetic force device, wherein the shielding unit comprises a conductive material.
The thin film deposition equipment capable of adjusting magnetic field distribution and the magnetic field adjusting device comprise a back plate and a fixing unit, wherein the back plate comprises a first surface and a second surface, the first surface of the back plate is connected with the second surface of the target, and the fixing unit is arranged on the second surface of the back plate.
The thin film deposition equipment capable of adjusting magnetic field distribution and the magnetic field adjusting device are characterized in that the shielding unit comprises a plurality of grooves or a plurality of perforations.
The thin film deposition equipment capable of adjusting magnetic field distribution and the magnetic field adjusting device are characterized in that the fixing unit is made of an insulating material.
The thin film deposition equipment capable of adjusting magnetic field distribution and the magnetic field adjusting device are characterized in that the fixing unit is a fixing bracket and comprises a plurality of hollowed-out parts.
The beneficial effects of the invention are as follows: the novel deposition equipment with adjustable magnetic field distribution is provided, and part of magnetic field generated by the magnetic force device is shielded by the shielding unit to finely adjust the magnetic field distribution in the accommodating space, and the uniformity of the thickness of the film deposited on the surface of the substrate can be effectively improved.
Drawings
FIG. 1 is a schematic perspective view of an embodiment of a thin film deposition apparatus capable of adjusting magnetic field distribution according to the present invention.
FIG. 2 is a schematic side cross-sectional view of an embodiment of a thin film deposition apparatus with adjustable magnetic field distribution according to the present invention.
FIG. 3 is a top view of an embodiment of the magnetic field adjusting device of the present invention.
FIG. 4 is a top view of an embodiment of a target and shielding unit of the magnetic field adjusting device of the present invention.
Fig. 5 is a top view of a target and shielding unit of a magnetic field adjusting device according to another embodiment of the invention.
FIG. 6 is a schematic cross-sectional view of an embodiment of the target, shielding unit and fixing unit of the magnetic field adjusting device of the present invention.
FIG. 7 is a schematic cross-sectional view of another embodiment of the target, shielding unit and fixing unit of the magnetic field adjusting device of the present invention.
FIG. 8 is a flowchart illustrating steps performed in an embodiment of a deposition method of a thin film deposition apparatus capable of adjusting magnetic field distribution according to the present invention.
Fig. 9 is a graph showing a distribution of film thickness deposited on a substrate surface by a thin film deposition apparatus of the related art.
FIG. 10 is a graph showing the thickness of a thin film deposited on a substrate surface by a thin film deposition apparatus capable of adjusting magnetic field distribution according to the present invention.
FIG. 11 is a graph showing film uniformity and film resistance for batch deposition of different substrates by the film deposition apparatus with adjustable magnetic field distribution according to the present invention.
Reference numerals illustrate: 10-a thin film deposition apparatus with adjustable magnetic field distribution; 100-a magnetic field adjusting device; 11-reaction chamber; 111-stop; 112-opening; 113-a back plate; 1131-a first surface; 1133-a second surface; 115-a feed inlet and a feed outlet; 12-accommodating space; 121-reaction space; 13-a carrier tray; 131-a substrate; 133-a first substrate; 135-a second substrate; 15-target material; 151-a first surface; 153-a second surface; 16-a fixed unit; 161-hollowed-out parts; 162-set space; 17-magnetic means; 171-a spindle; 18-connecting the cavity; 19-a masking unit; 190-a body portion; 192-perforating; 194-grooves.
Detailed Description
Referring to fig. 1 and 2, a schematic perspective cross-sectional view, a schematic side cross-sectional view, and a top view of an embodiment of a magnetic field adjusting apparatus according to the present invention are shown, respectively. As shown in the drawing, the thin film deposition apparatus 10 with adjustable magnetic field distribution mainly includes a reaction chamber 11, a carrying plate 13, a target 15, a magnetic device 17, at least one fixing unit 16 and a shielding unit 19, wherein the target 15, the fixing unit 16, the magnetic device 17 and the shielding unit 19 are defined as a magnetic field adjusting device 100, as shown in fig. 3.
The reaction chamber 11 has a receiving space 12 for receiving the carrier plate 13 and the target 15. The carrier plate 13 is used for carrying at least one substrate 131, and the target 15 faces the carrier plate 13 and the substrate 131 carried by the carrier plate. Specifically, the reaction chamber 11 may be provided with a disposition opening, for example, the disposition opening is located above the reaction chamber 11, wherein the receiving space 12 is connected to the outside through the disposition opening. The target 15 may be disposed or covered on the disposition opening of the reaction chamber 11 and connected to the accommodating space 12 of the reaction chamber 11, so that the target 15 and the reaction chamber 11 form a closed accommodating space 12.
The carrier plate 13 is displaceable relative to the target 15 and the distance between the carrier plate 13 and the target 15 is varied. Specifically, the carrying tray 13 may be displaced in a direction away from the target 15, and the substrate 131 is conveyed into the reaction chamber 11 by a robot arm and placed on the carrying tray 13, or the substrate 131 on the carrying tray 13 is conveyed to the outside of the reaction chamber 11 by a robot. The carrying tray 13 can drive the carrying substrate 131 to approach toward the target 15, so as to reduce the distance between the carrying substrate 131 carried by the carrying tray 13 and the target 15, and perform thin film deposition on the substrate 131.
In an embodiment of the present invention, the thin film deposition apparatus 10 with adjustable magnetic field distribution may be a Physical Vapor Deposition (PVD) chamber, and an electric field is applied to the accommodating space 12 during deposition, so that neutral gas atoms in the accommodating space 12 are impacted by electrons to form charged gas ions. A bias is applied to the target 15 and the carrier plate 13 so that the gas ions strike the target 15 and generate minute amounts of target particles. The target particles generated by the impact are attracted by the bias voltage on the carrier plate 13 and deposited on the surface of the substrate 131 to form a thin film on the surface of the substrate 131.
The target 15 includes a first surface 151 and a second surface 153, wherein the first surface 151 and the second surface 153 are opposite surfaces of the target 15, the first surface 151 faces the carrier 13 and/or the substrate 131, for example, the target 15 has an approximately disc-shaped appearance, the first surface 151 is a lower surface of the target 15, and the second surface 153 is an upper surface of the target 15. In order to increase the probability of ionization of the plasma gas atoms, a magnetic device 17 may be disposed on the second surface 153 of the target 15, where the magnetic device 17 forms a magnetic field in the accommodating space 12 on the first surface 151 side of the target 15, so that the charged particles in the accommodating space 12 are displaced in a spiral manner, and the motion path of the charged particles and the probability of striking the neutral gas atoms are increased. In addition, the magnetic device 17 may be connected to a rotating shaft 171, and the rotating shaft 171 drives the magnetic device 17 to rotate relative to the target 15, so as to improve uniformity of the thin film deposited on the surface of the substrate 131.
The magnetic device 17 can increase the probability of plasma gas ionization, thereby increasing the sputtering rate and controlling the uniformity of the deposited film. However, the magnetic device 17 is usually composed of a plurality of magnets, and the distribution of the magnetic field can be adjusted only by the arrangement or position of the magnets, so as to change the uniformity of the thin film deposited on the surface of the substrate 131. Therefore, the above-mentioned method for adjusting the magnetic field distribution is extremely limited, and the magnetic field generated by the magnetic device 17 cannot be finely adjusted, so that the uniformity of the thickness of the thin film deposited on the surface of the substrate 131 cannot be effectively improved.
For this purpose, the present invention proposes a thin film deposition apparatus 10 with adjustable magnetic field distribution, mainly comprising at least one fixing unit 16 disposed on the second surface 153 side of the target 15, wherein the fixing unit 16 is disposed between the magnetic device 17 and the target 15, and has at least one disposition space 162. Specifically, the fixing unit 16 is made of an insulating material, and does not block the magnetic force generated by the magnetic force device 17. The fixing unit 16 may be directly disposed on the second surface 153 of the target 15, and a disposition space 162 is formed between the fixing unit 16 and the second surface 153 of the target 15.
At least one shielding unit 19 is disposed between a part of the magnetic device 17 and a part of the target 15, wherein the shielding unit 19 is made of conductive material. Specifically, the shielding unit 19 may be disposed in the disposition space 162 of the fixing unit 16, and a part of the magnetic field or the magnetic force generated by the magnetic force device 17 may be shielded by the shielding unit 19.
By the arrangement of the shielding unit 19, the magnetic force of a partial region of the magnetic force device 17 can be shielded, so that the magnetic field size of the magnetic force device 17 on the first surface 151 side of the target 15 and/or the partial region of the accommodating space 12 can be reduced, and the magnetic field distribution formed by the magnetic force device 17 in the accommodating space 12 can be finely adjusted.
By the arrangement of the fixing unit 16, it is advantageous for the user to arrange at least one shielding unit 19 between a part of the target 15 and a part of the magnetic means 17 and to shield a part of the magnetic field generated by the magnetic means 17 with the shielding unit 19. In addition, the user can conveniently take out the shielding unit 19 from the installation space 162 or adjust the position of the shielding unit 19 in the installation space 162 to change the magnetic field area shielded by the shielding unit 19 and rapidly adjust the magnetic field distribution in the accommodating space 12.
In an embodiment of the present invention, the fixing unit 16 may be plate-shaped, as shown in fig. 1 and 6. Specifically, a connection cavity 18 may be disposed above the reaction cavity 11, wherein the magnetic device 17, the fixing unit 16 and the shielding unit 19 are disposed in the connection cavity 18, and the second surface 153 of the target 15 is in communication with the space of the connection cavity 18. For example, the fixing unit 16 may be fixed on the inner surface of the connection cavity 18, and an arrangement space 162 is formed between the fixing unit 16, the target 15 and the inner surface of the connection cavity 18, as shown in fig. 1. In various embodiments, the fixing unit 16 may also be directly disposed or fixed on the second surface 153 of the target 15, and a disposing space 162 is formed between the fixing unit 16 and the target 15, as shown in fig. 6.
In another embodiment of the present invention, as shown in fig. 3 and 7, the fixing unit 16 may be a fixing bracket, wherein the fixing unit 16 includes a plurality of hollow portions 161. A setting space 162 is formed between the fixing unit 16 and the target 15, and the shielding unit 19 is disposed in the setting space 162.
By fine tuning the magnetic field distribution of the magnetic device 17 on the first surface 151 side of the target 15 and/or in the accommodating space 12, the thickness of the thin film deposited on each area of the surface of the substrate 131 can be changed, and the uniformity (U%) of the thin film deposited on the surface of the substrate 131 can be improved, for example, the uniformity of the thin film on the surface of the substrate 131 can be made to be less than 1%, and detailed implementation methods and related experimental data will be described in the following examples.
In an embodiment of the present invention, as shown in fig. 4, the shielding unit 19 may be plate-shaped. In another embodiment of the present invention, as shown in fig. 5, the shielding unit 19 of the present invention has a main body 190, at least one through hole 192 and/or at least one groove 194, wherein the shielding effect of the main body 190, the through hole 192 and the groove 194 of the shielding unit 19 on the magnetic force generated by the magnetic device 17 is different. For this purpose, the shielding unit 19 with the through hole 192 and/or the groove 194 shields the magnetic force generated by the magnetic device 17, so that the magnetic field distribution of the magnetic device 17 in the accommodating space 12 can be further fine-tuned.
In an embodiment of the present invention, as shown in fig. 2, a blocking member 111 may be disposed in the accommodating space 12 of the reaction chamber 11, wherein one end of the blocking member 111 is connected to the reaction chamber 11, and an opening 112 is formed at the other end of the blocking member 111. The carrier plate 13 may approach toward the target 15 and enter or contact the opening 112 formed by the baffle 111, wherein the reaction chamber 11, the carrier plate 13, the target 15 and the baffle 111 may partition a reaction space 121 in the accommodating space 12, and perform thin film deposition on the substrate 131 on the carrier plate 13 in the reaction space 121. In addition, the magnetic field magnitude and the magnetic field distribution of each region in the reaction space 121 are finely adjusted by the shielding unit 19 to form a thin film having a uniform thickness on the surface of the substrate 131.
In an embodiment of the present invention, the shielding unit 19 may be directly disposed on the second surface 153 of the target 15 and electrically connected to the target 15, wherein the target 15 is not electrically connected to the reaction chamber 11. In another embodiment of the present invention, the shielding unit 19 may not be directly connected to the target 15, and may be grounded through a grounding wire or a grounding unit.
The number of shielding units 19 provided on the second surface 153 side of the target 15 may be plural, and may be arbitrarily arranged on the fixing units 16 of the second surface 153 of the target 15. In addition, the areas or shapes of the shielding units 19 may be different, and may be arranged in shielding structures of arbitrary shapes on the second surface 153 of the target 15.
In an embodiment of the present invention, the arrangement density or area of the through holes 192 and/or the grooves 194 on the plurality of shielding units 19 disposed on the second surface 153 of the target 15 is different, as shown in fig. 5.
In an embodiment of the invention, as shown in fig. 7, the magnetic field adjusting apparatus 100 and/or the reaction chamber 11 may include a back plate 113, wherein the back plate 113 includes a first surface 1131 and a second surface 1133, the first surface 1131 of the back plate 113 is connected to the second surface 153 of the target 15, and the fixing unit 16 and/or the shielding unit 19 are disposed on the second surface 1133 of the back plate 113 or in a direction of the second surface 1133. In addition, at least one groove may be disposed on the second surface 1133 of the backing plate 113 or the second surface 153 of the target 15, wherein the shielding unit 19 is disposed in the groove in a similar manner as a damascene, and the fixing unit 16 covers the groove and the shielding unit 19.
Referring to fig. 8, a flow chart of the steps of a deposition method of a deposition apparatus capable of adjusting magnetic field distribution according to the present invention is shown. Referring to fig. 1 and 2, a first substrate 133 is first placed on a carrier plate 13 of a deposition apparatus 10 with adjustable magnetic field distribution, as shown in step 21. Specifically, the first substrate 133 may be placed on the carrier plate 13 through the inlet/outlet 115 of the reaction chamber 11 by a mechanical arm, and then the carrier plate 13 drives the first substrate 133 to move toward the target 15, and a reaction space 121 is formed among the reaction chamber 11, the baffle 111, the target 15 and the carrier plate 13.
The first substrate 133 is subjected to thin film deposition by the deposition apparatus 10 to form a thin film on the surface of the first substrate 133, as shown in step 23. Specifically, an electric field may be applied to the gas atoms within the reaction space 121 to generate charged gas ions. The target 15 and the carrier plate 13 are biased such that the charged gas ions strike the target 15 to generate target particles, which are attracted by the bias on the carrier plate 13 and deposited on the first substrate 133 to form a thin film on the surface of the first substrate 133.
The thickness of the film deposited on the surface of the first substrate 133 is measured, as shown in step 25. Specifically, the film thickness of each region on the surface of the first substrate 133 can be measured to obtain the uniformity of the film.
As shown in fig. 9, a profile of the thickness of a thin film deposited on the surface of a substrate by a deposition apparatus of the prior art, or a profile of the thickness of a thin film deposited on the surface of a first substrate by a deposition apparatus and a deposition method according to the present invention, wherein the resistance of a thin film deposited on the surface of the substrate 131 or the first substrate 133 (RsAvg) is about 47.4 ohm/square (Ω/sq), and the uniformity (Rs 2 Avg-U%) is 3.47%.
In practical application, according to the thickness distribution of the thin film on the first substrate 133 shown in fig. 9, the shielding unit 19 is disposed in the disposing space 162 formed by the fixing unit 16 between a part of the magnetic device 17 and a part of the target 15, so as to shield a part of the magnetic field generated by the magnetic device 17 by the shielding unit 19, wherein the magnetic field in the reaction space 121 below the shielding unit 19 is smaller, as shown in step 27.
In practical application, the substrate 131 and the target 15 can be respectively divided into a plurality of areas, wherein the plurality of areas on the target 15 respectively correspond to the plurality of areas of the substrate 131. Then, according to the film thickness of each region on the substrate 131, the shielding unit 19 is selectively disposed in the disposing space 162 corresponding to the fixing unit 16, so as to adjust the film thickness of each region on the substrate 131.
In an embodiment of the present invention, the film thickness on the first substrate 133 may be divided into a plurality of thicknesses, for example, a first region of the first substrate 133 has a first thickness, and a second region of the first substrate 133 has a second thickness, wherein the first thickness is greater than the second thickness. The shielding unit 19 is then disposed in the space 162 of the fixing unit 16 between the magnetic device 17 and the target 15 corresponding to the first region and/or the first thickness to shield the magnetic field corresponding to the first region, for example, the shielding unit 19 is disposed on the target 15 having the vertically extending position of the first region of the first thickness.
After the adjustment step is completed, a second substrate 135 may be placed on the carrier plate 13, and the second substrate 135 may be deposited with a thin film.
As shown in fig. 10, which is a graph showing the thickness distribution of the thin film deposited on the surface of the second substrate 135 by the deposition apparatus capable of adjusting the magnetic field distribution according to the present invention, the thin film resistance (RsAvg) deposited on the surface of the second substrate 135 is about 45.8 ohm/square (Ω/sq), and the uniformity (Rs 2 Avg-U%) is 0.91%. From the film thickness distribution shown in fig. 9 and 10, it can be clearly seen that the deposition apparatus 10 and the deposition method thereof with adjustable magnetic field distribution according to the present invention can effectively improve the uniformity of the film deposited on the surface of the substrate 131 or the second substrate 135.
As shown in fig. 11, which is a graph of the uniformity U% and the film resistance of the deposition apparatus 10 with adjustable magnetic field distribution for batch deposition on different substrates 131 or second substrates 135, the film resistance deposited on the surface of the substrate 131 or second substrates 135 under the same process conditions can be maintained between 44 and 46 ohm/square (Ω/sq) after the magnetic field distribution adjustment of the deposition apparatus 10 with adjustable magnetic field distribution, and the uniformity of the film is less than 1%, which can indicate that the deposition apparatus and the deposition method according to the present invention can continuously and repeatedly deposit a film with uniform thickness on the surface of the substrate 131.
The invention has the advantages that:
the novel deposition equipment with adjustable magnetic field distribution is provided, and part of magnetic field generated by the magnetic force device is shielded by the shielding unit to finely adjust the magnetic field distribution in the accommodating space, and the uniformity of the thickness of the film deposited on the surface of the substrate can be effectively improved.
The foregoing description is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.
Claims (6)
1. A thin film deposition apparatus capable of adjusting magnetic field distribution, comprising:
a reaction cavity, which comprises a containing space;
the bearing plate is positioned in the accommodating space and is used for bearing at least one substrate;
the target material is connected in the accommodating space of the reaction cavity and comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material, and the first surface of the target material faces the bearing disc;
the magnetic force device is positioned in the direction of the second surface of the target and is used for forming a magnetic field in the accommodating space;
the fixing unit is positioned between the magnetic device and the target and comprises at least one setting space, wherein the fixing unit is made of an insulating material; a kind of electronic device with high-pressure air-conditioning system
At least one shielding unit is arranged in the arrangement space of the fixing unit, so that the shielding unit is positioned between part of the magnetic force device and part of the target material and shields part of the magnetic field generated by the magnetic force device, wherein the shielding unit comprises a conductive material, and the shielding unit comprises a plurality of grooves or a plurality of perforations.
2. The apparatus of claim 1, comprising a backing plate having a first surface and a second surface, the first surface of the backing plate being coupled to the second surface of the target, and the fixing unit being disposed on the second surface of the backing plate.
3. The apparatus according to claim 1, wherein the fixing unit is a fixing bracket and includes a plurality of hollow portions.
4. A magnetic field adjusting apparatus, suitable for use in a thin film deposition apparatus, comprising:
a target material comprising a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material;
the magnetic force device is positioned in the direction of the second surface of the target and is used for forming a magnetic field in the direction of the first surface of the target;
the fixing unit is positioned between the magnetic device and the target and comprises at least one setting space, wherein the fixing unit is made of an insulating material; a kind of electronic device with high-pressure air-conditioning system
The shielding unit is arranged in the arrangement space of the fixing unit, so that the shielding unit is positioned between part of the magnetic force device and part of the target material and shields part of the magnetic field generated by the magnetic force device, wherein the shielding unit comprises a conductive material, and the shielding unit comprises a plurality of grooves or a plurality of through holes.
5. The device of claim 4, comprising a back plate having a first surface and a second surface, the first surface of the back plate being coupled to the second surface of the target, and the fixing unit being disposed on the second surface of the back plate.
6. The device of claim 4, wherein the fixing unit is a fixing bracket and includes a plurality of hollow portions.
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| CN202110594752.5A CN115404449B (en) | 2021-05-28 | 2021-05-28 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
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| CN202110594752.5A CN115404449B (en) | 2021-05-28 | 2021-05-28 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
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| CN115404449A CN115404449A (en) | 2022-11-29 |
| CN115404449B true CN115404449B (en) | 2023-12-01 |
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| CN1993491A (en) * | 2004-12-28 | 2007-07-04 | 株式会社爱发科 | Sputtering source, sputtering device, method for forming thin film |
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| CN115404449A (en) | 2022-11-29 |
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