CN219195111U - Deposition cavity capable of adjusting magnetic field distribution - Google Patents
Deposition cavity capable of adjusting magnetic field distribution Download PDFInfo
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- CN219195111U CN219195111U CN202121174785.6U CN202121174785U CN219195111U CN 219195111 U CN219195111 U CN 219195111U CN 202121174785 U CN202121174785 U CN 202121174785U CN 219195111 U CN219195111 U CN 219195111U
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Abstract
The utility model provides a deposition cavity capable of adjusting magnetic field distribution, which comprises a reaction cavity, a bearing disc, a target material, a magnetic device and at least one shielding unit. The bearing plate and the target are positioned in the accommodating space of the reaction cavity, wherein the bearing plate is used for bearing at least one substrate, and one surface of the target faces the bearing plate and the substrate. The magnetic force device is positioned on the other surface of the target and forms a magnetic field in the accommodating space of the reaction cavity through the target. The shielding unit is made of conductive materials and is positioned between a part of the magnetic force device and a part of the target material, wherein the shielding unit is used for shielding a part of magnetic field generated by the magnetic force device so as to finely adjust the magnetic field distribution in the accommodating space and effectively improve the uniformity of the thickness of the film deposited on the surface of the substrate.
Description
Technical Field
The utility model relates to a deposition cavity capable of adjusting magnetic field distribution, which can finely adjust the magnetic field distribution in a containing space and can effectively improve the uniformity of the thickness of a film deposited on the surface of a substrate.
Background
Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are common thin film deposition equipment and are commonly used in the manufacture of integrated circuits, light emitting diodes, and displays.
The deposition equipment mainly comprises a cavity and a substrate bearing plate, wherein the substrate bearing plate is positioned in the cavity and is used for bearing at least one substrate. Taking physical vapor deposition as an example, a target needs to be disposed in the chamber, wherein the target faces the substrate on the substrate carrier plate. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber to bias the target and the substrate carrier plate, respectively.
The inert gas in the cavity forms ionized inert gas under the action of the high-voltage electric field, and the ionized inert gas is attracted by the bias voltage on the target material to bombard the target material. Target atoms or molecules sputtered from the target are attracted by the bias on the substrate carrier plate and deposited on the surface of the substrate to form a thin film on the surface of the substrate.
Generally, a plurality of magnets are disposed above the target, wherein the magnets are rotatable relative to the target and form a magnetic field below the target. The charged particles under the target are displaced in a spiral manner by the magnetic field of the magnet. Therefore, the probability of collision with gas atoms can be greatly improved, and the sputtering rate, the film deposition efficiency and the uniformity are further improved.
Disclosure of Invention
In performing thin film deposition processes, it has been a goal of various process plants to increase the uniformity of the thickness of the thin film on the substrate. The utility model provides a deposition cavity capable of adjusting magnetic field distribution, which is characterized in that a shielding unit is mainly arranged between a part of magnetic force devices and a part of targets so as to finely adjust the magnetic field distribution formed by the magnetic force devices in a containing space or a reaction space and greatly improve the uniformity of the thickness of a film deposited on a substrate.
An object of the present utility model is to provide a deposition chamber with adjustable magnetic field distribution, which mainly comprises a reaction chamber, a carrying plate, a target, a magnetic device and at least one shielding unit. The target and the bearing plate are positioned in the accommodating space of the reaction cavity, wherein one surface of the target faces the bearing plate and the substrate borne by the bearing plate. The magnetic force device is arranged on the other surface of the target and forms a magnetic field in the accommodating space through the target. The shielding unit is positioned between the magnetic device and the target material and used for shielding part of the magnetic field generated by the magnetic device and adjusting the magnetic field distribution of the magnetic device in the accommodating space.
In practical application, the setting position or thickness of the shielding unit can be adjusted according to the thickness of the film deposited in each area on the substrate so as to change the magnetic field size of each area in the accommodating space, adjust the magnetic field distribution of the magnetic force device in the accommodating space and effectively improve the uniformity of the film deposited on the surface of the substrate in the subsequent deposition process.
An object of the present utility model is to provide a deposition chamber with adjustable magnetic field distribution, wherein corresponding connection mechanisms are disposed on a surface of a target facing a magnetic device and a shielding unit, so that the shielding unit can be fixed on the target through the connection mechanisms, and the magnetic field distribution in the accommodating space can be adjusted.
An objective of the present utility model is to provide a deposition chamber with adjustable magnetic field distribution, wherein the reaction chamber includes a set opening, and the target material covers the set opening of the reaction chamber, so as to form a receiving space between the reaction chamber and the target material.
A sealing insulating unit, such as an O-ring, is further arranged between the target and the reaction cavity, so that the target and the reaction cavity are not electrically connected, and bias voltage on the target is prevented from being grounded through the reaction cavity. In addition, the target material can be arranged on a back plate, and the back plate and/or the target material can cover the arrangement opening of the reaction cavity to form a containing space.
An object of the present utility model is to provide a deposition chamber and a magnetic field distribution adjusting device capable of adjusting magnetic field distribution, wherein at least one shielding unit is disposed between a portion of a target and a portion of a magnetic device, and the shielding unit is used for shielding a portion of a magnetic field generated by the magnetic device. In addition, the material of the shielding unit can be selected according to the requirement of the manufacturing process, and the thickness, shape or area of the shielding unit can be changed so as to form a uniform magnetic field in the accommodating space.
In order to achieve the above-mentioned object, the present utility model provides a deposition chamber with adjustable magnetic field distribution, comprising: a reaction cavity, which comprises a containing space; the bearing plate is positioned in the accommodating space and is used for bearing at least one substrate; the target material is connected with the accommodating space of the reaction cavity and comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material, and the first surface of the target material faces the bearing disc; the magnetic force device is positioned in the direction of the second surface of the target and used for forming a magnetic field in the accommodating space; the rotating shaft is connected with the magnetic device and drives the magnetic device to rotate relative to the target; and at least one shielding unit positioned between part of the magnetic force device and part of the target material and shielding part of the magnetic field generated by the magnetic force device, wherein the shielding unit comprises a conductive material.
The utility model provides a magnetic field distribution adjusting device, which is suitable for a deposition cavity and comprises: the target comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target; the magnetic force device is positioned in the direction of the second surface of the target and is used for forming a magnetic field in the direction of the first surface of the target; the rotating shaft is connected with the magnetic device and drives the magnetic device to rotate relative to the target; and at least one shielding unit positioned between part of the magnetic force device and part of the target material and shielding part of the magnetic field generated by the magnetic force device, wherein the shielding unit comprises a conductive material.
The second surface of the target material comprises a plurality of connecting holes, the shielding unit comprises a plurality of connecting convex parts, and the connecting convex parts of the shielding unit are used for being inserted into the connecting holes on the second surface of the target material and fixing the shielding unit on the second surface of the target material.
The second surface of the target material comprises a plurality of connecting holes, the shielding unit comprises a plurality of through holes, and the connecting units penetrate through the through holes of the shielding unit and are fixed on the connecting holes of the target material so as to fix the shielding unit on the second surface of the target material.
The deposition cavity capable of adjusting magnetic field distribution and the magnetic field distribution adjusting device comprise a back plate, wherein the back plate comprises a first surface and a second surface, the first surface of the back plate is connected with the second surface of the target, and the shielding unit is arranged in the direction of the second surface of the back plate.
The second surface of the back plate comprises at least one groove, and the shielding unit is arranged in the groove.
The beneficial effects of the utility model are as follows: the novel deposition cavity with adjustable magnetic field distribution is provided, and part of magnetic field generated by the magnetic force device is shielded by the shielding unit to finely adjust the magnetic field distribution in the accommodating space, and the uniformity of the thickness of the film deposited on the surface of the substrate can be effectively improved.
Drawings
FIG. 1 is a schematic perspective view of an embodiment of a deposition chamber with adjustable magnetic field distribution.
FIG. 2 is a schematic side cross-sectional view of an embodiment of a deposition chamber with adjustable magnetic field distribution according to the present utility model.
FIG. 3 is a top view of an embodiment of the magnetic field distribution adjusting apparatus of the present utility model.
FIG. 4 is a top view of an embodiment of a target and shielding unit of the magnetic field distribution adjusting apparatus of the present utility model.
Fig. 5 is a schematic side sectional view of a magnetic field distribution adjusting apparatus according to another embodiment of the present utility model.
FIG. 6 is a schematic side sectional view of another embodiment of the magnetic field distribution adjusting apparatus of the present utility model.
FIG. 7 is a schematic side sectional view of another embodiment of the magnetic field distribution adjusting apparatus of the present utility model.
FIG. 8 is a flow chart illustrating steps of a deposition method for a deposition chamber with adjustable magnetic field distribution according to an embodiment of the present utility model.
FIG. 9 is a graph showing the thickness of a thin film deposited on the surface of a substrate by a deposition chamber of the prior art.
FIG. 10 is a graph showing the thickness of a thin film deposited on a substrate surface by a deposition chamber with adjustable magnetic field distribution according to the present utility model.
FIG. 11 is a graph of film uniformity and film resistance for batch deposition of different substrates using a deposition chamber with adjustable magnetic field distribution according to the present utility model.
Reference numerals illustrate: 10-a deposition chamber with adjustable magnetic field distribution; 100-a magnetic field distribution adjusting device; 11-reaction chamber; 111-stop; 112-opening; 113-a back plate; 1131-a first surface; 1133-a second surface; 115-a feed inlet and a feed outlet; 12-accommodating space; 121-reaction space; 13-a carrier tray; 131-a substrate; 133-a first substrate; 135-a second substrate; 14-grooves; 15-target material; 151-a first surface; 153-a second surface; 155-connecting holes; 17-magnetic means; 171-a spindle; 19-a masking unit; 191-connecting protrusions; 193-perforating; 195-connection unit.
Detailed Description
Referring to fig. 1 and 2, a schematic perspective cross-sectional view, a schematic side cross-sectional view and a top view of an embodiment of a magnetic field distribution adjusting apparatus according to the present utility model are shown, respectively. As shown, the deposition chamber 10 with adjustable magnetic field distribution mainly comprises a reaction chamber 11, a carrier plate 13, a target 15, a magnetic device 17 and a shielding unit 19, wherein the target 15, the magnetic device 17 and the shielding unit 19 are defined as a magnetic field distribution adjusting device 100, as shown in fig. 3.
The reaction chamber 11 has a receiving space 12 for receiving the carrier plate 13 and the target 15. The carrier plate 13 is used for carrying at least one substrate 131, and the target 15 faces the carrier plate 13 and the substrate 131 carried by the carrier plate. Specifically, the reaction chamber 11 may be provided with a setting opening, for example, the setting opening is located above the reaction chamber 11, wherein the accommodating space 12 is connected to the outside through the setting opening, and the target 15 may be disposed or covered on the setting opening of the reaction chamber 11 and connected to the accommodating space 12 of the reaction chamber 11, so that the target 15 and the reaction chamber 11 form a closed accommodating space 12.
The carrier plate 13 is displaceable relative to the target 15 and the distance between the carrier plate 13 and the target 15 is varied. Specifically, the carrying tray 13 may be displaced in a direction away from the target 15, and the substrate 131 is conveyed into the reaction chamber 11 by a robot arm and placed on the carrying tray 13, or the substrate 131 on the carrying tray 13 is conveyed to the outside of the reaction chamber 11 by a robot. The carrying tray 13 can drive the carrying substrate 131 to approach toward the target 15, so as to reduce the distance between the carrying substrate 131 carried by the carrying tray 13 and the target 15, and perform thin film deposition on the substrate 131.
In an embodiment of the present utility model, the deposition chamber 10 with adjustable magnetic field distribution may be a physical vapor deposition chamber (PVD), and an electric field is applied to the accommodating space 12 during deposition, so that neutral gas atoms in the accommodating space 12 are impacted by electrons to form charged gas ions. A bias is applied to the target 15 and the carrier plate 13 so that the gas ions strike the target 15 and generate minute amounts of target particles. The target particles generated by the impact are attracted by the bias voltage on the carrier plate 13 and deposited on the surface of the substrate 131 to form a thin film on the surface of the substrate 131.
The target 15 includes a first surface 151 and a second surface 153, wherein the first surface 151 and the second surface 153 are opposite surfaces of the target 15, the first surface 151 faces the carrier 13 and/or the substrate 131, for example, the target 15 has an approximately disc-shaped appearance, the first surface 151 is a lower surface of the target 15, and the second surface 153 is an upper surface of the target 15. In order to increase the probability of ionization of the plasma gas atoms, a magnetic device 17 may be disposed on the second surface 153 of the target 15, where the magnetic device 17 forms a magnetic field in the accommodating space 12 on the first surface 151 side of the target 15, so that the charged particles in the accommodating space 12 are displaced in a spiral manner, and the motion path of the charged particles and the probability of striking the neutral gas atoms are increased. In addition, the magnetic device 17 may be connected to a rotating shaft 171, and the rotating shaft 171 drives the magnetic device 17 to rotate relative to the target 15, so as to improve uniformity of the thin film deposited on the surface of the substrate 131.
The magnetic device 17 can increase the probability of plasma gas ionization, thereby increasing the sputtering rate and controlling the uniformity of the deposited film. However, the magnetic device 17 is usually composed of a plurality of magnets, and the distribution of the magnetic field can be adjusted only by the arrangement or position of the magnets, so as to change the uniformity of the thin film deposited on the surface of the substrate 131. Therefore, the above-mentioned method for adjusting the magnetic field distribution is extremely limited, and the magnetic field generated by the magnetic device 17 cannot be finely adjusted, so that the uniformity of the thickness of the thin film deposited on the surface of the substrate 131 cannot be effectively improved.
Therefore, the present utility model proposes a deposition chamber 10 with adjustable magnetic field distribution, wherein at least one shielding unit 19 is disposed between a part of magnetic devices 17 and a part of targets 15, and the shielding unit 19 shields a part of magnetic fields generated by the magnetic devices 17, wherein the shielding unit 19 is made of conductive materials.
By the arrangement of the shielding unit 19, the magnetic field of a part of the area of the magnetic device 17 can be shielded, so that the magnetic field of the magnetic device 17 on the first surface 151 side of the target 15 and/or the part of the area of the accommodating space 12 can be reduced, and the magnetic field distribution formed by the magnetic device 17 in the accommodating space 12 can be finely adjusted.
By fine tuning the magnetic field distribution of the magnetic device 17 on the first surface 151 side of the target 15 and/or in the accommodating space 12, the thickness of the thin film deposited on each area of the surface of the substrate 131 can be changed, and the uniformity (U%) of the thin film deposited on the surface of the substrate 131 can be improved, for example, the uniformity of the thin film on the surface of the substrate 131 can be made to be less than 1%, and detailed implementation methods and related experimental data will be described in the following examples.
In an embodiment of the present utility model, a blocking member 111 is disposed in the accommodating space 12 of the reaction chamber 11, wherein one end of the blocking member 111 is connected to the reaction chamber 11, and the other end of the blocking member 111 forms an opening 112. The carrier plate 13 may approach toward the target 15 and enter or contact the opening 112 formed by the baffle 111, wherein the reaction chamber 11, the carrier plate 13, the target 15 and the baffle 111 may partition a reaction space 121 in the accommodating space 12, and perform thin film deposition on the substrate 131 on the carrier plate 13 in the reaction space 121. In addition, the magnetic field magnitude and the magnetic field distribution of each region in the reaction space 121 are finely adjusted by the shielding unit 19 to form a thin film having a uniform thickness on the surface of the substrate 131.
In an embodiment of the present utility model, the shielding unit 19 may be directly disposed on the second surface 153 of the target 15 and electrically connected to the target 15, wherein the target 15 is not electrically connected to the reaction chamber 11. In another embodiment of the present utility model, the shielding unit 19 may not be directly connected to the target 15, and may be grounded through a grounding wire or a grounding unit.
The second surface 153 of the target 15 may be provided with a plurality of connection holes 155, as shown in fig. 4, and the shielding unit 19 may be fixed or disposed on the second surface 153 of the target 15 through the connection holes 155. The number of shielding units 19 provided on the second surface 153 side of the target 15 may be plural, and may be arbitrarily arranged on the second surface 153 of the target 15. In addition, the areas or shapes of the shielding units 19 may be different, and may be arranged in shielding structures of arbitrary shapes on the second surface 153 of the target 15.
Specifically, as shown in fig. 5, a plurality of connection protrusions 191 may be disposed on the surface of the shielding unit 19, wherein the connection protrusions 191 of the shielding unit 19 are configured to be inserted into the connection holes 155 of the second surface 153 of the target 15, and fix the shielding unit 19 on the second surface 153 of the target 15. As shown in fig. 6, a plurality of through holes 193 may also be disposed on the shielding unit 19, where the through holes 193 of the shielding unit 19 are aligned with the connection holes 155 of the target 15, and the connection units 195 are used to pass through the through holes 193 of the shielding unit 19 and connect the connection holes 155 of the target 15, so as to fix the shielding unit 19 on the second surface 153 of the target 15, for example, the connection units 195 may be screws. The above two methods for fixing the shielding unit 19 and the target 15 are only two specific implementation methods of the present utility model, and are not limited to the scope of the claims of the present utility model, and other different fixing mechanisms may be used to connect the shielding unit 19 and the target 15 in practical applications.
In an embodiment of the utility model, as shown in fig. 7, the magnetic field distribution adjusting apparatus 100 and/or the reaction chamber 11 may include a back plate 113, wherein the back plate 113 includes a first surface 1131 and a second surface 1133, the first surface 1131 of the back plate 113 is connected to the second surface 153 of the target 15, and the shielding unit 19 is disposed in a direction of the second surface 1133 of the back plate 113. In addition, at least one groove 14 may be disposed on the second surface 1133 of the backing plate 113 or the second surface 153 of the target 15, and at least one shielding unit 19 may be disposed in the groove 14 in a manner similar to a damascene.
Referring to fig. 8, a flow chart of the steps of the deposition method of the deposition chamber with adjustable magnetic field distribution according to the present utility model is shown. Referring to fig. 1 and 2, a first substrate 133 is first placed on a carrier plate 13 of a deposition chamber 10 with adjustable magnetic field distribution, as shown in step 21. Specifically, the first substrate 133 may be placed on the carrier plate 13 through the inlet/outlet 115 of the reaction chamber 11 by a mechanical arm, and then the carrier plate 13 drives the first substrate 133 to move toward the target 15, and a reaction space 121 is formed among the reaction chamber 11, the baffle 111, the target 15 and the carrier plate 13.
The first substrate 133 is subjected to thin film deposition through the deposition chamber 10 to form a thin film on the surface of the first substrate 133, as shown in step 23. Specifically, an electric field may be applied to the gas atoms within the reaction space 121 to generate charged gas ions. The target 15 and the carrier plate 13 are biased such that the charged gas ions strike the target 15 to generate target particles, which are attracted by the bias on the carrier plate 13 and deposited on the first substrate 133 to form a thin film on the surface of the first substrate 133.
The thickness of the film deposited on the surface of the first substrate 133 is measured, as shown in step 25. Specifically, the film thickness of each region on the surface of the first substrate 133 can be measured to obtain the uniformity of the film.
As shown in fig. 9, the distribution of the film thickness deposited on the substrate surface by the deposition chamber of the prior art, or the distribution of the film thickness deposited on the first substrate surface by the deposition chamber and the deposition method of the present utility model, wherein the film resistance (Rs Avg) deposited on the substrate 131 or the first substrate 133 is about 47.4 ohm/square (Ω/sq) and the uniformity (Rs 2 Avg-U%) is 3.47%.
In practical application, the shielding unit 19 may be disposed between a portion of the magnetic device 17 and a portion of the target 15 according to the thickness distribution of the thin film on the first substrate 133 shown in fig. 9, so as to shield a portion of the magnetic field generated by the magnetic device 17 by the shielding unit 19, wherein the magnetic field in the reaction space 121 below the shielding unit 19 is smaller, as shown in step 27.
In practical application, the substrate 131 and the target 15 can be respectively divided into a plurality of areas, wherein the plurality of areas on the target 15 respectively correspond to the plurality of areas of the substrate 131. Then, according to the film thickness of each region on the substrate 131, the shielding unit 19 is selectively disposed in the corresponding region on the target 15 to adjust the film thickness of each region on the substrate 131.
In an embodiment of the present utility model, the film thickness on the first substrate 133 may be divided into a plurality of thicknesses, for example, a first region of the first substrate 133 has a first thickness, and a second region of the first substrate 133 has a second thickness, wherein the first thickness is greater than the second thickness. The shielding unit 19 is then arranged between the magnetic means 17 and the target 15 corresponding to the first area and/or the first thickness to shield the magnetic field corresponding to the first area, for example the shielding unit 19 is arranged at the target 15 having a vertically extending position of the first area of the first thickness.
After the adjustment step is completed, a second substrate 135 may be placed on the carrier plate 13, and the second substrate 135 may be deposited with a thin film.
As shown in fig. 10, the distribution of the film thickness deposited on the surface of the second substrate 135 by the deposition chamber with adjustable magnetic field distribution according to the present utility model is shown, wherein the film resistance (Rs Avg) deposited on the surface of the second substrate 135 is about 45.8 ohm/square (Ω/sq), and the uniformity (Rs 2 Avg-U%) is 0.91%. From the film thickness distribution shown in fig. 9 and 10, it can be clearly seen that the deposition chamber 10 with adjustable magnetic field distribution and the deposition method thereof according to the present utility model can effectively improve the uniformity of the film deposited on the surface of the substrate 131 or the second substrate 135.
As shown in fig. 11, the uniformity of the deposition of the magnetic field distribution of the deposition chamber 10 for different substrates 131 or second substrates 135 in batches is shown by the graph of U% and film resistance, and the film resistance deposited on the surface of the substrate 131 or second substrate 135 under the same process conditions can be maintained between 44 and 46 ohm/sq (Ω/sq) after the magnetic field distribution of the deposition chamber 10 for adjusting magnetic field distribution is adjusted, and the uniformity of the film is less than 1%, which can indicate that the deposition of the film with uniform thickness on the surface of the substrate 131 can be continuously and repeatedly performed by the deposition chamber and the deposition method of the present utility model.
The utility model has the advantages that:
the novel deposition cavity with adjustable magnetic field distribution is provided, and part of magnetic field generated by the magnetic force device is shielded by the shielding unit to finely adjust the magnetic field distribution in the accommodating space, and the uniformity of the thickness of the film deposited on the surface of the substrate can be effectively improved.
The foregoing description is only a preferred embodiment of the present utility model and is not intended to limit the scope of the utility model, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.
Claims (5)
1. A deposition chamber with adjustable magnetic field distribution, comprising:
a reaction cavity, which comprises a containing space;
one end of the baffle is connected with the reaction cavity, and the other end of the baffle forms an opening;
the bearing plate is positioned in the accommodating space and is used for bearing at least one substrate;
the target material is connected with the accommodating space of the reaction cavity and comprises a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target material, and the first surface of the target material faces the bearing disc;
the magnetic force device is positioned in the direction of the second surface of the target and is used for forming a magnetic field in the accommodating space;
the rotating shaft is connected with the magnetic device and drives the magnetic device to rotate relative to the target; a kind of electronic device with high-pressure air-conditioning system
At least one shielding unit located between part of the magnetic device and part of the target material and shielding part of the magnetic field generated by the magnetic device, wherein the shielding unit comprises a conductive material.
2. The deposition chamber of claim 1, wherein the second surface of the target comprises a plurality of connection holes and the shielding unit comprises a plurality of connection protrusions, the connection protrusions of the shielding unit being configured to be inserted into the connection holes on the second surface of the target and to fix the shielding unit on the second surface of the target.
3. The deposition chamber of claim 1, wherein the second surface of the target comprises a plurality of connection holes and the shielding unit comprises a plurality of perforations, the plurality of connection units passing through the perforations of the shielding unit and being secured to the connection holes of the target to secure the shielding unit to the second surface of the target.
4. The deposition chamber of claim 1, comprising a back plate, wherein the back plate comprises a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and the shielding unit is disposed in a direction of the second surface of the back plate.
5. The deposition chamber of claim 4, wherein the second surface of the back plate comprises at least one recess and the shielding unit is disposed in the recess.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121174785.6U CN219195111U (en) | 2021-05-28 | 2021-05-28 | Deposition cavity capable of adjusting magnetic field distribution |
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| CN202121174785.6U CN219195111U (en) | 2021-05-28 | 2021-05-28 | Deposition cavity capable of adjusting magnetic field distribution |
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| CN219195111U true CN219195111U (en) | 2023-06-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115404450A (en) * | 2021-05-28 | 2022-11-29 | 鑫天虹(厦门)科技有限公司 | Magnetic field distribution adjusting device, deposition equipment and deposition method thereof |
| CN115404449A (en) * | 2021-05-28 | 2022-11-29 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
-
2021
- 2021-05-28 CN CN202121174785.6U patent/CN219195111U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115404450A (en) * | 2021-05-28 | 2022-11-29 | 鑫天虹(厦门)科技有限公司 | Magnetic field distribution adjusting device, deposition equipment and deposition method thereof |
| CN115404449A (en) * | 2021-05-28 | 2022-11-29 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
| CN115404449B (en) * | 2021-05-28 | 2023-12-01 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment capable of adjusting magnetic field distribution and magnetic field adjusting device thereof |
| CN115404450B (en) * | 2021-05-28 | 2023-12-05 | 鑫天虹(厦门)科技有限公司 | Magnetic field distribution adjusting device, deposition equipment and deposition method thereof |
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