TWI386121B - 電路連接結構體及其製造方法以及電路連接結構體用的半導體基板 - Google Patents

電路連接結構體及其製造方法以及電路連接結構體用的半導體基板 Download PDF

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Publication number
TWI386121B
TWI386121B TW095130765A TW95130765A TWI386121B TW I386121 B TWI386121 B TW I386121B TW 095130765 A TW095130765 A TW 095130765A TW 95130765 A TW95130765 A TW 95130765A TW I386121 B TWI386121 B TW I386121B
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Taiwan
Prior art keywords
circuit
semiconductor substrate
group
electrode
nitrogen
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TW095130765A
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English (en)
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TW200719778A (en
Inventor
Yuuichi Kaneya
Toshiaki Tanaka
Toshiaki Itabashi
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Hitachi Chem Dupont Microsys
Hitachi Chemical Co Ltd
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Publication of TW200719778A publication Critical patent/TW200719778A/zh
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Publication of TWI386121B publication Critical patent/TWI386121B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description

電路連接結構體及其製造方法以及電路連接結構體用的半導體基板
本發明是關於一種液晶顯示裝置所使用的電路連接結構體及其製造方法以及電路連接結構體用的半導體基板。更詳細地說，是關於一種利用電路粘接構件將半導體基板和電路構件進行粘接，且進行電氣連接之電路連接結構體及其製造方法以及電路連接結構體用的半導體基板。
隨著半導體晶片和電子零件的小型薄型化、液晶顯示裝置的高精細化，它們所使用的電路和電極正在高密度、高精細化。這種微細電極的連接因為難以利用焊錫(solder)進行連接，所以最近大多是採用使用粘接劑的方法。
使用粘接劑的粘接方法，例如日本專利早期公開之特開昭55-104007號公報所揭露的，其是利用在絕緣性粘接劑中使碳、鎳、金屬被覆塑膠粒子等導電性粒子進行分散之異方導電性的粘著劑和膜狀物，並進行加熱加壓，而沿粘接劑的厚度方向得到電氣連接之ACF(=異方導電性薄膜，以下為ACF)方法。例如日本專利早期公開之特開昭60-262430號公報所說明的，其是不利用導電性粒子而在連接時進行壓接，並利用電極面的微細凹凸的直接接觸以得到電氣連接之NCF(=非導電性薄膜，以下為NCF)法。
近年來，通過ACF的電極半導體基板用途，利用COG(chip on glass)方式和COF(chip on film)方式來進行液晶驅動用IC的構裝。在驅動用IC表面上，廣泛地應用聚 醯亞胺膜(polyimide film)和聚苯噁唑膜(polybenzoxazole film)等耐熱性樹脂組成物。在耐熱性樹脂組成物和ACF、NCF等粘接薄膜之間需要具有優良的粘接性，特別是構裝後的晶片，對耐冷熱週期試驗和高溫高濕試驗要求可靠性高的粘接性。
使耐熱性樹脂(即聚醯亞胺膜)和ACF間的粘接性提高的方法包括，在日本專利早期公開之特開2003-73862號公報中，記載一種藉由對聚醯亞胺膜進行電漿處理而使粘接性提高的技術。而且，在日本專利早期公開之特開2003-163451號公報中，也記載有一種藉由對聚醯亞胺膜進行低溫電漿處理而使粘著性提高的技術。
但是，在日本專利早期公開之特開2003-73862號公報中，具體所揭示的處理氣體的種類只是氧氣，而關於構裝後的晶片對耐冷熱週期試驗和高溫高濕試驗的可信性高的粘接性之記述則完全沒有記載。而且，在日本專利早期公開之特開2003-163451號公報中，具體所揭示的處理氣體的種類只是氧氣，而關於構裝後的晶片對耐冷熱週期試驗和高溫高濕試驗的可信性高的粘接性之記述則同樣完全沒有記載。實際上，氧氣的存在並無法達成粘接性的長期的改善效果之問題。
本發明的目的是提供一種為了解決以上那樣的習知課題而形成的，不是在耐熱性樹脂組成物的表面上設置物理的凹凸，或使表面呈疏水性而防止吸濕劣化以改善粘接 性，而是利用追加的表面處理在耐熱性樹脂膜中導入化學上穩定的官能基以改善粘接性，且即使在高溫高壓下使用，也可在耐熱性樹脂膜和電路粘接構件間呈現良好的粘接性之電路連接結構體及其製造方法以及電路連接結構體用的半導體基板。
為了解決上述課題並達成目的，利用本發明的電路連接結構體之製造方法的特徵在於，包括：利用含有從氮、氨及聯氨構成的群中所選擇的至少一種之氮系氣體，對表面具有耐熱性樹脂膜及第一電路電極的半導體基板進行電漿處理而進行表面改質處理的工程；將前述被表面改質處理的半導體基板，和在表面具有與前述第一電路電極對向的第二電路電極之電路構件，以通過電路粘接構件使前述第一及第二電路電極對向的形態進行配置的工程；將前述半導體基板及前述電路構件進行壓接，使前述半導體基板及前述電路構件進行粘接，且將對向的前述第一及第二電路電極彼此進行電氣連接之壓接工程。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述電路粘接構件含有導電性粒子，且前述第一及第二電路電極通過前述導電性粒子進行電氣連接。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述氮系氣體為還含有氫或惰性氣體的混合氣體。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述氮系氣體的比率對前述混合氣體為20~100 vol%。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述耐熱性樹脂膜為選自聚醯胺、聚醯亞胺、聚醯胺-醯亞胺、聚苯噁唑、聚苯並咪唑及苯環丁烯構成的群組中的至少二種的共聚物，或選自前述群組中的至少一種的前驅物構成的膜。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述電漿處理在0.5Pa到常壓之範圍的壓力下進行。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述半導體基板為半導體元件。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述電路構件為玻璃基板、金屬基板或陶瓷基板。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述電路粘接構件為粘接薄膜或粘接膏。
而且，本發明的電路連接結構體之製造方法的特徵在於：前述粘接薄膜或粘接膏含有環氧系樹脂。
而且，本發明的電路連接結構體的特徵在於：利用前述電路連接結構體的製造方法進行製造。
而且，本發明的電路連接結構體用的半導體基板之特徵在於：該半導體基板的表面上具有耐熱性樹脂膜及第一電路電極，並利用含有由氮、氨及聯氨構成的群中所選擇的至少一種之氮系氣體，以電漿處理而施以表面改質處理。
如利用本發明，由於對半導體基板進行電漿處理而進行表面改質處理，所以使半導體基板的表面上所形成的耐熱性樹脂膜，和電路粘接構件、其中含有環氧系樹脂的粘 接薄膜之粘著性提高，因此，起到即使在高溫高濕下也可長期維持良好的粘接性，能夠製造具有高可信性的電路連接結構體之效果。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
以下，根據圖示詳細地進行說明關於本發明的電路連接結構體及其製造方法以及電路連接結構體用的半導體基板的實施例。另外，以下實施例並不會對本發明進行限定。
(實施例1)
圖1為依照本發明的實施例1所繪示之電路連接結構體的概略剖面圖。實施例1是對使用異方導電性薄膜(ACF)作為電路粘接構件4的情況進行說明。在圖1中，電路連接結構體1A由半導體基板2與電路構件3之間夾持電路粘接構件4而構成。
在半導體基板2的表面上具有耐熱性樹脂膜5，且形成多個第一電路電極6，其例如金電極。在電路構件3的表面上形成有與第一電路電極6對向的多個第二電路電極7。另外，將分別形成有這些第一電路電極6及第二電路電極7的半導體基板2及電路構件3的面，作為它們的表面。
半導體基板2和電路構件3是利用電路粘接構件4進行粘接。特別是，如後面所說明的，耐熱性樹脂膜5和電路粘接構件4被牢固地進行粘接。而且，在電路粘接構件 4中具有分散的導電性粒子8，利用介入第一電路電極6和第二電路電極7之間的導電性粒子8，可使第一電路電極6和第二電路電極7電氣連接。另一方面，由於未介入這些電極之間的導電性粒子8是分散於電路粘接構件4內，因此除了電極以外的部分皆可保持絕緣性。
本發明的耐熱性樹脂膜5中所使用的耐熱性樹脂組成物，可使用從聚醯胺(polyamide)、聚醯亞胺、聚醯胺-醯亞胺、聚苯噁唑、聚苯並咪唑(polybenzimidazole)與苯環丁烯(benzocyclobutene)中所選擇的至少二種的共聚物(copolymer)。而且，也可使用從聚醯胺、聚醯亞胺、聚醯胺-醯亞胺、聚苯噁唑、聚苯並咪唑與苯環丁烯中所選擇的至少一種的前驅物(precursor)。此時，也可使用預先進行感光性處理的聚醯亞胺、聚苯噁唑等。例如，聚醯亞胺具有以一般式(I)所表示的重複單位(repeating unit)。
(式中，W表示4價的有機基，R表示2價的有機基)。
本發明的電路粘接構件4可使用膏狀、薄膜狀的粘接構件，特別以ACF等粘接薄膜為佳。粘接薄膜可廣泛應用熱可塑性材料、由熱和光進行硬化的熱硬化性材料。因為將半導體基板2和電路構件3進行粘接後的耐熱性和耐濕性優良，所以以應用熱硬化性材料較佳。
電路粘接構件4的原料成分可使用含有潛在性硬化劑的環氧系樹脂或含有過氧化物等游離基系硬化劑的丙烯系樹脂，它們可在短時間內進行硬化而使粘接作業性良好，且在分子結構上粘接性優良，所以較佳。特別是，對環氧系樹脂而言，其可利用後述的電漿處理而使與耐熱性樹脂膜5表面上所生成的醯胺基(-NH-CO-)、氨基(-NH2 )等官能基的粘接性進一步提高，所以更佳。
在ACF中也可添加導電性粒子和少量的絕緣性粒子，其可在使半導體基板2和電路粘接構件4形成一體之具有粘接劑的半導體晶片的製造中，在加熱加壓時作為厚度保持材料發揮作用，所以較佳。導電性粒子和絕緣性粒子的調配比例，對ACF為0.1~30體積百分比(vol%)較佳。而且，為了形成異方導電性，將導電性粒子對ACF以0.5~15 vol%進行調配為佳。
在電路粘接構件4中進行調配的導電性粒子包括有，Au、Ag、Pt、Co、Ni、Cu、W、Sb、Sn、焊錫等金屬粒子以及碳、黑鉛等。而且，可以這些導電性粒子形成核材，或者在非導電性的玻璃、陶瓷、塑膠等由高分子等構成的核材上，被覆由前述那樣的材質所構成的導電層而形成。另外，將導電性材料以絕緣層進行被覆所形成的絕緣被覆粒子和導電性粒子，與玻璃、陶瓷、塑膠等絕緣粒子的並用等，由於也使後述的半導體基板2和電路構件3的位置對合中的分解能提高，所以可較佳地使用。為了在微小的電極上確保有1個以上的導電性粒子，因此導電性粒子的 粒徑為了在微小的電極上確保1個以上，較佳為盡可能多的粒子數，而以小粒徑粒子較為適當。導電性粒子的粒徑為小於等於15μm，較佳為1μm~7μm之間。
半導體基板2可使用例如將矽晶圓單片化了的半導體元件等。而且，電路構件3可使用玻璃基板、金屬基板或陶瓷基板等，另外也可使用撓性配線板和TAB帶等。
下面，對採用以上結構的電路連接結構體1A的製造方法進行說明。
首先，在半導體基板2上，將作為耐熱性樹脂膜5的原料之耐熱性樹脂組成物利用旋轉塗佈法等進行塗佈，並進行加熱處理而進行熱硬化。藉此，在半導體基板2的表面上形成耐熱性樹脂膜5。
接著，在形成有耐熱性樹脂膜5的半導體基板2的表面上，形成第一電路電極6。第一電路電極6的形成方法可以是，對預先在半導體基板2上所堆疊的金屬層利用蝕刻處理後露出而形成，或者是藉由在半導體基板2上設置凸塊(bump)等電極構件而形成。
然後，藉由對形成有耐熱性樹脂膜5及第一電路電極6的半導體基板2進行電漿處理，以進行表面改質處理。
在電漿處理中所使用的電漿處理裝置，例如較佳是使用在半導體加工中所使用的乾蝕刻裝置。
在電漿處理中所使用的氣體較佳是使用含有氮氣、氨氣(ammonia)、聯氨(hydrazine)中的至少一種之氮系氣體。另外，這裏所說的氮系氣體意味著含有氮原子的電漿處理 用的氣體，其中較佳的為氮氣或氨氣。在含有除了上述以外的氣體的情況下，較佳的形態是使混合的氣體所含有的氧和氟化碳氫化合物(hydrocarbon fluoride)不大於等於50%，並混合從氦氣和氬氣等惰性氣體和氫中所選擇的氣體。更佳的形態為，氮氣、氨氣、聯氨的至少一種所構成的氮系氣體，或者是它們和氫氣或惰性氣體所構成的混合氣體。而且，混合氣體中的氮系氣體的比率為20~100 vol%為佳。如氮系氣體的比率不足20 vol%，則無法充分地進行半導體基板2的表面改質處理，不能得到所需的基板粘接性能，所以不佳。
為了進行電漿處理，將形成有耐熱性樹脂膜5及第一電路電極6的半導體基板2載置到電漿處理裝置(未圖示)內，並將上述氮系氣體和混合氣體導入到電漿處理裝置內。接著，在裝置內保持一定的壓力並施加高頻，且使其產生一定時間的電漿放電。雖然根據裝置形狀、電源頻率、氣體的種類的不同，壓力會有所變化，但電漿處理裝置系統內的壓力在0.5Pa到常壓(即大氣壓)的範圍內較佳。若系統內的壓力超過這些上限或下限，則無法維持放電，因此不能進行表面改質處理，所以不佳。
電漿處理時間在0.1~60分的範圍內，如在1片片進行處理的葉片式裝置的情況下，較佳為0.5~5分。所施加的電力、偏壓、基板溫度等其他的條件可以利用眾所周知的方法，但為了維持良好的表面狀態，以基板偏壓或自偏壓大於等於-200V、小於等於0V，基板溫度大於等於 0℃、小於等於20℃之範圍的電漿處理為佳。
接著，如圖2所示，準備已施以電漿處理的半導體基板2，以及在表面上已形成與第一電路電極6對向的多個第二電路電極7之電路構件3。如圖3所示，以使第一電路電極6和第二電路電極7彼此重合的形態，使半導體基板2和電路構件3位置對合而對向配置。此時，可在這些半導體基板2和電路構件3之間預先配置電路粘接構件4。
接著，如圖3的箭形符號所示，藉由將半導體基板2和電路構件3進行壓接，而將這些半導體基板2及電路構件3進行粘接。半導體基板2和電路構件3的粘接可利用眾所周知的方法。例如，將電路粘接構件4臨時安裝在半導體基板2或電路構件3上，並進行這些半導體基板2及電路構件3的位置對合後，利用加熱加壓或加壓，將半導體基板2及電路構件3進行粘接。此時，可如圖1所示，將彼此對向的第一電路電極6及第二電路電極7之間，利用電路粘接構件4內的導電性粒子8進行電氣連接。
半導體基板2和電路構件3的位置對合，也可利用顯微鏡和圖像存儲裝置進行，此時，位置對合標誌的並用也是有效的。上述加熱加壓可在作為半導體晶片2的每1個晶片上進行，但如將多個同時進行壓接，則對生產力的提高是有效的。利用本發明之耐熱性樹脂膜5和電路粘接構件4的粘接方法，即使為單晶片也可適用於多晶片的安裝。
本發明的ACF的壓接工程中的壓接條件包括，加熱溫度較佳是大於等於100℃、小於等於260℃，更佳為大於等 於150℃、小於等於200℃的範圍。加熱時間較佳是大於等於1秒、小於等於5分，更佳為大於等於5秒、小於等於30秒的範圍。壓接壓力每單位面積較佳是大於等於10MPa、小於等於200MPa，更佳為大於等於20MPa、小於等於150MPa的範圍。
關於耐熱性樹脂膜5和電路粘接構件4的粘接，在電子資訊通信學會論文誌C-II Vol.J74-C-II，NO.6，pp489-497(1991)中有揭露，利用氮電漿處理，在聚醯亞胺的表面上生成醯胺基(-NH-CO)、氨基(-NH2 )等官能基。但是，在此論文中是利用肽鍵(peptide bond)的形式使聚醯亞胺彼此的接合力提高，可是氮電漿與氧和四氟化碳的電漿相比，所呈現的粘接力只能持續大約一半的時間。因此，上述論文中粘接的物件為聚醯亞胺彼此之間，所以與本發明不同，而且也無法長期維持粘接力。
而且，已知通常在醯胺基和環氧基之間會因熱而產生插入反應(insertion reaction)和附加反應(addition reaction)。因此，當將耐熱性樹脂膜5的表面利用上述的混合所體以電漿處理而進行表面改質之半導體基板2，和電路粘接構件4進行熱壓接時，在醯胺基和環氧基之間會新形成化學鍵，所以認為能夠得到耐熱性高並具有高可信性的粘接性之電路連接結構體。另外，即使在高溫、高濕環境下也可長期維持良好的粘接性。
另外，即使在將形成有耐熱性樹脂膜5及第一電路電極6的半導體基板2進行電漿處理後，一直長期間放置到 熱壓接工程為止的情況下，也可與電路粘接構件4進行熱壓接。因此，使預先施行了電漿處理的半導體基板2也可進行保存、搬運等，然後可在電路連接結構體中使用。但是，較佳是進行利用氮和氨等氣體的再次的電漿處理，和為了使吸附水排出而進行加熱處理。
本發明是藉由利用氮系氣體進行電漿處理，而進行耐熱性樹脂膜5的表面改質，並形成有助於粘接性改善的官能基。但是，也可基於除去耐熱性樹脂膜5的表面污染物和劣化層、表面的凹凸性改善等目的，而由本發明的氮系氣體、其他的氣體種類例如氧、氧/四氟化碳混合氣體等進行電漿處理。接著，基於導入對改善粘接性有效的置換基的目的，可利用本發明的氮系氣體連續或非連續地進行電漿處理。此時，重要的是與電路構件3進行壓接前之半導體基板2的最終電漿處理是由氮系氣體進行。
(實施例2)
圖4為依照本發明的實施例2所繪示之電路連接結構體的概略剖面圖。在實施例2中，使用非導電性薄膜(NCF)作為電路粘接構件4，其中與實施例1應用相同的材料和製造方法，省略其重複的說明。
在圖4中，電路連接結構體1B是採用在半導體基板2和電路構件3之間挾持電路粘接構件4的構成。另外，電路粘接構件4不含有導電性粒子。在半導體基板2的表面上具有耐熱性樹脂膜5，並形成有多個第一電路電極6，其例如金電極。在電路構件3的表面上形成有與第一電路電 極6對向的多個第二電路電極7。
半導體基板2和電路構件3是利用電路粘接構件4進行粘接。第一電路電極6和第二電路電極7藉由彼此進行直接接觸而電氣連接。這些第一電路電極6及第二電路電極7除了可以是金電極等的凸塊以外，也可為頂端被切斷之狀態的焊錫和焊接線等。
下面，對採用以上那種構成的電路連接結構體1B的製造方法進行說明。
如圖2所示，準備與實施例1同樣地已實施電漿處理的半導體基板2，以及在表面上形成與第一電路電極6對向的多個第二電極電極7。接著，如圖5所示，以使第一電路電極6和第二電路電極7重合的形態，將半導體基板2和電路構件3位置對合併對向配置。此時，在這些半導體基板2和電路構件3之間，預先配置電路粘接構件4。
接著，如圖5的箭形符號所示，在挾持電路粘接構件4的狀態下，將半導體基板2和電路構件3進行壓接。此壓接方式可與實施例1之方式同樣地進行。藉由將半導體基板2和電路構件3進行壓接(如圖4所示)，使半導體基板2和電路構件3機械性地進行粘接，且第一電路電極6和第二電路電極7藉由直接接觸而電氣連接。
如此，可製造即使在高溫、高濕環境下也可長期維持良好的粘接性之電路連接結構體1B。
以下，利用實驗例及比較例，對本發明更加具體地進行說明。另外，以下的實驗例並不對本發明進行限定。
(實驗例1) 〔1〕(合成例1)聚醯亞胺前驅物清漆(varnish)的製作
在具有溫度計、攪拌裝置、冷卻管及氮氣導入管的4口可拆式燒瓶中，使20.02g(0.1mol)的4,4’-二氨基二苯醚在289.2g的N-甲基-2-吡咯烷酮中溶解後，加入31.02g(0.1mol)的苯均四酸二酐，在室溫下攪拌6小時。然後，進行粘度調整，得到15重量百分比(wt%)的聚醯亞胺前驅物清漆。
對所得到的聚醯亞胺前驅物，利用含有樹脂部分1 wt%的γ-氨丙基三乙氧基矽烷之N-甲基-2吡咯烷酮溶液進行稀釋，以得到13 wt%的聚醯亞胺前驅物清漆的形態，接著並利用1 μm孔徑的特氟隆(註冊商標)過濾器(filter)進行加壓過濾，得到聚醯亞胺前驅物清漆。
〔2〕聚醯亞胺膜的製作
將在合成例1中所得到的作為耐熱性樹脂膜的聚醯亞胺前驅物清漆，在作為半導體基板的5英吋矽晶圓上進行旋轉塗佈，並分別在加熱板上以130℃加熱處理2分鐘，利用擴散爐在氮氣環境下以200℃加熱處理30分鐘，以350℃加熱處理60分鐘，而得到具有膜厚5μm的聚醯亞胺(α)膜的矽基板(X)。
〔3〕電漿處理
將所得到的具有聚醯亞胺(α)膜的矽基板(X)，利用日本真空(公司)製的CSE-1110葉片式電漿蝕刻裝置，在氮氣總流量25cc/min、壓力10Pa、高頻電力100W的條件下 進行2分鐘的電漿處理。將所得到的已完成氮電漿處理之具聚醯亞胺膜的矽基板，利用配置有鑽石刀的切割機切出1cm角，作為粘接性評價用下層晶片。
〔4〕電路粘接構件
將含有苯氧基樹脂(高分子量環氧樹脂)的ACF材料，以日立化成工業(公司)製的AC-8408進行切割，得到2mm寬的帶狀物。
〔5〕壓接
將評價用IC晶片作為粘接性評價用上層晶片，其中該評價用IC晶片是在2×10 mm2 矽基板上，於厚0.5mm的長邊側2邊形成300個被稱作凸塊的50μmφ、高20μm的金電極。由粘接性評價用上層晶片和上述氮電漿處理完成的下層晶片挾持AC-8408製的ACF材料，並將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，得到評價用電極半導體基板。
〔6〕評價
將所得到的評價用電極半導體基板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時。粘接強度評價利用Dage製的Series4000接合強度測試機，將樣品與未處理樣品一起載置在溫度設定為260℃的的載物臺上，並於30秒後進行剪切處理，且對粘接強度和破壞模式進行比較評價。將壓力蒸煮器測試的未處理品的結果一併在表1中進行表示。
(實驗例2) 〔1〕(合成例2)聚醯亞胺前驅物清漆的製作
在具有溫度計、攪拌裝置、冷卻管及氮氣導入管的4口可拆式燒瓶中，加入使18.02g(0.09mol)的4,4’-二氨基二苯醚和2.49g(0.01mol)的1,3-雙(3-氨丙基)-1,1,1-四甲基二甲矽醚，在270.0g的N-甲基-2-吡咯烷酮中進行溶解的溶解液，再加入6.54g(0.03mol)的苯均四酸二酐和20.60g(0.07mol)的3,3’,4，4’-聯苯四羧酸酐，在室溫下攪拌6小時。然後，進行粘度調整，再利用1 μm孔徑的特氟隆(註冊商標)過濾器進行加壓過濾，得到15 wt%的聚醯亞胺前驅物清漆。
〔2〕聚醯亞胺膜的製作
將在合成例2中所得到的作為耐熱性樹脂膜的聚醯亞胺前驅物清漆，在作為半導體基板的5英吋矽晶圓上進行旋轉塗佈，並分別在加熱板上以130℃加熱處理2分鐘，利用擴散爐在氮氣環境下以200℃加熱處理30分鐘，以350℃加熱處理60分鐘，得到具有膜厚5μm的聚醯亞胺(β)膜的矽基板(Y)。
〔3〕電漿處理
將所得到的具有聚醯亞胺(β)膜的矽基板(Y)，利用日本真空(公司)製的CSE-1110葉片式電漿蝕刻裝置，在氮總流量25cc/min、壓力10Pa、高頻電力100W的條件下進行2分鐘的電漿處理。將所得到的已完成氮電漿處理之具聚醯亞胺膜的矽基板，利用配置有鑽石刀的切割機切出1cm角，作為粘接性評價用下層晶片。
〔4〕電路粘接構件
與實施例1相同，利用日立化成工業(公司)製的AC-8408製作2mm寬的ACF材料。
〔5〕壓接
與實施例1同樣地，將評價用IC晶片作為粘接性評價用上層晶片，將上述已完成氮電漿處理的具有聚醯亞胺(β)膜的矽基板作為下層晶片，並挾持AC-8408製的ACF材料，且將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，得到評價用電極半導體基板。
〔6〕評價
與實施例1同樣地，將所得到的評價用電極半導體基板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時。與未處理樣品一起，利用Dage製的Series4000接合強度測試機，進行260℃下的粘接強度和破壞模式的比較評價。結果如表1所示。
(實驗例3) 〔1〕(合成例3)聯苯並噁唑前驅物清漆的製作 聯苯並噁唑前驅物的合成
在具有攪拌機及溫度計的0.5升的燒瓶中，加入21.7g(0.084mol)的4,4’-二氨基二苯醚和125.0g的N-甲基吡咯烷酮，並將燒瓶冷卻到0℃，且將反應溫度保持在小於等於10℃而滴注20.0g(0.168mol)的氯化亞硫醯。在氯化亞硫醯滴注完之後，在10℃左右，攪拌30分鐘，得到4,4’-二氨基二苯醚的二氯化物溶液。
在具有溫度計、攪拌裝置、冷卻管及氮導入管的4口可拆式燒瓶中，加入100g的N-甲基吡咯烷酮，並添加37.0g(0.10莫耳)的2,2-雙(3-氨基-4-羥苯基)-1,1,1,3,3,3-六氟丙烷且進行攪拌溶解後，添加26.6g的吡啶。將該溶液進行冷卻且使溫度保持在0~10℃，並將1,4-二羧基環已烷二氯化物溶液在30分鐘的時間裏進行滴注後，於10℃攪拌30分鐘。將反應液投入到4升的水中，並將析出物進行回收且清洗後，在40℃下減壓乾燥2天得到聚羥醯胺。
將15.0g的上述聚羥醯胺，在溶解了樹脂部分1 wt%的γ-氨丙基三乙氧基矽烷之N-甲基-2吡咯烷酮溶液22.5g中進行溶解後，利用1μm孔徑的特氟隆(註冊商標)過濾器進行加壓過濾，得到40 wt%的聯苯並噁唑前驅物清漆。
〔2〕聯苯並噁唑膜的製作
將在合成例3中所得到的作為耐熱性樹脂膜的聯苯並噁唑前驅物清漆，在作為半導體基板的5英吋矽晶圓上進行旋轉塗佈，並分別在加熱板上以120℃加熱處理2分鐘，利用擴散爐在氮環境下以200℃加熱處理30分鐘，以320℃加熱處理60分鐘，得到具有膜厚5μm的聯苯並噁唑(γ)膜的矽基板(Z)。
〔3〕電漿處理
將所得到的具有聯苯並噁唑(γ)膜的矽基板(Z)，利用日本真空(株)製CSE-1110葉片式電漿蝕刻裝置，在氮總流 量25cc/min、壓力10Pa、高頻電力100W的條件下進行2分鐘的電漿處理。將所得到的已完成氮電漿處理之具聯苯並噁唑膜的矽基板，利用配置有鑽石刀的切割機切出1cm角，作為粘接性評價用下層晶片。
〔4〕電路粘接構件
與實施例1相同，利用日立化成工業(株)製AC-8408製作2mm寬的ACF材料。
〔5〕壓接
與實施例1同樣地，將評價用IC晶片作為粘接性評價用上層晶片，將上述氮電漿處理完成的矽基板(Z)作為下層晶片，並挾持AC-8408製的ACF材料，且以上述構成，將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，而得到評價用電極半導體基板。
〔6〕評價
與實施例1同樣地，將所得到的評價用電極半導體基板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時，並與未處理樣品一起，利用Dage製的Series4000接合強度測試機，進行粘接強度和破壞模式的比較評價。結果如表1所示。
(比較例1) 〔5〕壓接
將實施例1所得到的具有膜厚5μm的聚醯亞胺(α)膜之矽基板(X)，不進行電漿處理而作為下層晶片使用。將評價用IC晶片作為粘接性評價用上層晶片，而粘接薄膜利用 日立化成工業(公司)製的AC-8408製作2mm寬的ACF材料。以上述構成，將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，而得到評價用電極半導體基板。
〔6〕評價
與實施例1同樣地，將所得到的評價用電極半導體基板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時，並與未處理樣品一起，利用Dage制Series4000接合強度測試機，進行粘接強度和破壞模式的比較評價。結果如表1所示。
(比較例2) 〔3〕電漿處理
將實施例1所得到的帶有膜厚5μm的聚醯亞胺(α)膜之矽基板(X)，利用YAMATO化學(公司)製的PC101A氧電漿裝置，在氧總流量100cc/分、壓力100Pa、高頻電力400W的條件下進行2分鐘的電漿處理。將所得到的已完成氧電漿處理之具聚醯亞胺膜的矽基板，利用配置有鑽石刀的切割機切出1cm角，作為粘接性評價用下層晶片。
〔5〕壓接
將評價用IC晶片作為粘接性評價用上層晶片，將氧電漿處理完成的矽基板(X)作為下層晶片使用，且粘接薄膜利用日立化成工業(公司)製的AC-8408製作2mm寬的ACF材料。以上述構成，將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，而得到評價用 電極半導體基板。
〔6〕評價
與實施例1同樣地，將所得到的評價用電極半導體基板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時，並與未處理樣品一起，利用Dage製的Series4000接合強度測試機，進行粘接強度和破壞模式的比較評價。結果如表1所示。
(比較例3) 〔3〕電漿處理
將所得到的具有膜厚5μm的聚醯亞胺(α)膜之矽基板(X)，利用日本真空製CSE-1110葉片式電漿蝕刻裝置，在四氟化甲烷總流量25cc/min、壓力10Pa、高頻電力100W條件下進行2分鐘的電漿處理。將所得到的已完成四氟化甲烷電漿處理之具聚醯亞胺膜的矽基板，利用配置有鑽石刀的切割機切出1cm角，作為粘接性評價用下層晶片。
〔5〕壓接
將評價用IC晶片作為粘接性評價用上層晶片，將四氟化甲烷電漿處理完成的矽基板(X)作為下層晶片使用，且粘接薄膜利用日立化成工業(公司)製的AC-8408製作2mm寬的ACF材料。以上述構成，將加熱溫度設定為160℃，以每總電極面積50MPa進行10秒鐘加熱壓接，而得到評價用電極半導體基板。
〔6〕評價
與實施例1同樣地，將所得到的評價用電極半導體基 板，投入到121℃、2atm、100RH%的壓力蒸煮器試驗機中24小時及48小時，並與未處理樣品一起，利用Dage製Series4000接合強度測試機，進行粘接強度和破壞模式的比較評價。結果如表1所示。
將以上的實驗例1~實驗例3及比較例1~比較例3的評價結果，在表1中匯總表示。
由表1可知，在實驗例1~3中，即使將評價用電極半導體基板投入到壓力蒸煮器試驗機中24小時及48小時後，也可維持與初期值相同的粘接強度。而且，粘接強度評價的破壞模式是ACF自身的破壞，而ACF和耐熱性樹脂膜的粘接得以保持。與此相對，在比較例1~3中，在將評價用電極半導體基板投入到壓力蒸煮器試驗機中24小時及48小時後，粘接強度顯著下降。而且，粘接強度評價的破壞模式是在ACF凝集破壞產生之前，在聚醯亞胺(α)和ACF間的界面上產生剝離。因此可知，利用本發明的電路連接結構體可在長期維持高粘接強度。
如以上所說明的，利用關於本發明的電路連接結構體及其製造方法以及電路連接結構體用的半導體基板，即使在高溫高濕環境下也可長期維持良好的粘接性，能夠得到具有高可信性的電路連接結構體，所以對各種小型半導體製品是有用的，特別適用于在高溫高濕環境下所使用的例如車載用半導體製品、車載用液晶顯示裝置等。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1A、1B‧‧‧電路連接結構體
2‧‧‧半導體基板
3‧‧‧電路構件
4‧‧‧電路粘接構件
5‧‧‧耐熱性樹脂膜
6‧‧‧第一電路電極
7‧‧‧第二電路電極
8‧‧‧導電性粒子
圖1所示為利用本發明的實施例1之電路連接結構體的概略剖面圖。
圖2所示為使半導體基板和電路構件對向之狀態的概 略剖面圖。
圖3所示為在半導體基板和電路構件間配置電路粘接構件(ACF)之狀態的概略剖面圖。
圖4所示為利用本發明的實施例2之電路連接結構體的概略剖面圖。
圖5所示為在半導體基板和電路構件間配置電路粘接構件(NCF)之狀態的概略剖面圖。
1A‧‧‧電路連接結構體
2‧‧‧半導體基板
3‧‧‧電路構件
4‧‧‧電路粘接構件
5‧‧‧耐熱性樹脂膜
6‧‧‧第一電路電極
7‧‧‧第二電路電極
8‧‧‧導電性粒子

Claims (9)

  1. 一種電路連接結構體的製造方法，其特徵在於，包括：利用含有選自由氮氣、氨氣及聯氨構成的群組中的至少一種之氮系氣體，對表面具有耐熱性樹脂膜及第一電路電極的半導體基板進行電漿處理以進行表面改質處理，以於前述耐熱性樹脂膜的表面形成醯胺基(-NH-CO-)或氨基(-NH2 )的工程；將前述經表面改質處理的半導體基板，和在表面具有與前述第一電路電極對向的第二電路電極之電路構件，以通過電路粘接構件使前述第一及第二電路電極對向的形態進行配置的工程；以及將前述半導體基板及前述電路構件進行壓接，使前述半導體基板及前述電路構件進行粘接，且將對向的前述第一及第二電路電極彼此進行電氣連接之壓接工程，其中前述耐熱性樹脂膜為從聚醯胺、聚醯亞胺、聚醯胺-醯亞胺、聚苯噁唑、聚苯並咪唑與苯環丁烯所組成的群組中所選擇的至少一種聚合物或是至少二種的共聚物，或是從前述群組所選擇的至少一種的前驅物所構成的膜，前述電路粘接構件為包含環氧系樹脂或丙烯酸系樹脂的其中任一的粘接薄膜或粘接膏。
  2. 如申請專利範圍第1項所述之電路連接結構體的製造方法，其中：前述電路粘接構件含有導電性粒子，且前述第一及第二電路電極藉由前述導電性粒子進行電氣連 接。
  3. 如申請專利範圍第1項所述之電路連接結構體的製造方法，其中：前述電漿處理所使用之氣體，更包括使用除了前述氮系氣體之外，還含有氫氣或惰性氣體的混合氣體。
  4. 如申請專利範圍第3項所述之電路連接結構體的製造方法，其中：前述混合氣體中的前述氮系氣體的比率是前述混合氣體的20~100 vol%。
  5. 如申請專利範圍第1項所述之電路連接結構體的製造方法，其中：前述電漿處理是在0.5Pa到常壓之範圍的壓力下進行。
  6. 如申請專利範圍第1項所述之電路連接結構體的製造方法，其中：前述半導體基板為半導體元件。
  7. 如申請專利範圍第1項所述之電路連接結構體的製造方法，其中：前述電路構件為玻璃基板、金屬基板或陶瓷基板。
  8. 一種電路連接結構體，其特徵在於：利用申請專利範圍第1項所記述的電路連接結構體的製造方法進行製造。
  9. 一種電路連接結構體用的半導體基板，其特徵在於：該半導體基板的表面上具有耐熱性樹脂膜及第一電路電極，並利用含有選自氮氣、氨氣及聯氨構成的群組中的至少一種之氮系氣體，以電漿處理而施以表面改質處理，以於前述耐熱性樹脂膜的表面形成醯胺基(-NH-CO-) 或氨基(-NH2 )，其中前述耐熱性樹脂膜由從聚醯胺、聚醯亞胺、聚醯胺-醯亞胺、聚苯噁唑、聚苯並咪唑與苯環丁烯所組成的群組中所選擇的至少一種聚合物或是至少二種的共聚物，或是從前述群組所選擇的至少一種的前驅物所構成。
TW095130765A 2005-08-22 2006-08-22 電路連接結構體及其製造方法以及電路連接結構體用的半導體基板 TWI386121B (zh)

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US20090189254A1 (en) 2009-07-30
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KR20080036079A (ko) 2008-04-24
JP4691417B2 (ja) 2011-06-01
TW200719778A (en) 2007-05-16
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US8148204B2 (en) 2012-04-03
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