TWI384641B - 發光二極體封裝件 - Google Patents

發光二極體封裝件 Download PDF

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Publication number
TWI384641B
TWI384641B TW096107117A TW96107117A TWI384641B TW I384641 B TWI384641 B TW I384641B TW 096107117 A TW096107117 A TW 096107117A TW 96107117 A TW96107117 A TW 96107117A TW I384641 B TWI384641 B TW I384641B
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TW
Taiwan
Prior art keywords
package
emitting diode
wafer
gold
electrode
Prior art date
Application number
TW096107117A
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English (en)
Other versions
TW200739969A (en
Inventor
Sang Hyun Shin
Seog Moon Choi
Young Ki Lee
Yong Sik Kim
Original Assignee
Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200739969A publication Critical patent/TW200739969A/zh
Application granted granted Critical
Publication of TWI384641B publication Critical patent/TWI384641B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/96—Corner joints or edge joints for windows, doors, or the like frames or wings
    • E06B3/9616—Corner joints or edge joints for windows, doors, or the like frames or wings characterised by the sealing at the junction of the frame members
    • E06B3/962—Mitre joints
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/04—Wing frames not characterised by the manner of movement
    • E06B3/263—Frames with special provision for insulation
    • E06B3/267—Frames with special provision for insulation with insulating elements formed in situ
    • E06B3/2675—Frames with special provision for insulation with insulating elements formed in situ combined with prefabricated insulating elements
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    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
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Description

發光二極體封裝件 [專利優先權]
本申請案主張在2006年3月9日於韓國智慧財產局提出申請之韓國專利申請案第2006－0022141號之優先權，該申請案之揭露內容併入本文中作為參考。
本發明係關於發光二極體(以下簡稱為“LED”)封裝件，且詳言之，係關於避免由於晶片接合材料而在半導體層間短路且在LED晶片與基板間具有卓越之接合強度之LED封裝件。
半導體LED在各種應用中已廣泛得到注意，例如不會引起任何污染之環保光源(environmentally fTiendly light source)。近來，將發出單色光之LED裝置與螢光粉(phosphor)結合以提供不同的光波長。此種LED產品係藉由接合具有各種結構之LED晶片至封裝件基板來製造。
第1圖係說明具有已固定在其中之垂直結構LED晶片之習知LED封裝件。參照第1圖，該LED封裝件10包含封裝件基板11及固定在該封裝件基板11上之垂直結構LED晶片12。該LED晶片12包含連續堆疊在晶片基板12a(例如，碳化矽(SiC)基板)及晶片電極12b上之半導體層12c。該封裝件基板11具有在其上表面上形成之基板電極11a與11b。該等半導體層12c包含n型半導體層、主動層及p型半導體層，並且透過該晶片基板12a與晶片電極12b接收電力以在該主動層發光。該晶片基板12a係透過線(打線接合(wire bonding))與該基板電極11a電性連接，並且該晶片電極12b透過如鉛－錫(Pb－Sn)之導電接合材料13與該基板電極11b接合(晶片接合)。
為了晶片接合，通常施加熱及壓力以將LED晶片12接合至基板11。此時，由於壓力，該接合材料13會橫向突出，而可能造成該LED晶片12中之半導體層12c(該n型半導體層、主動層以及p型半導體層)間之電性短路。此種半導體層間的電性短路係致命的問題，可能造成LED晶片喪失其功能。除此之外，為了達到更高的產品可靠度，該LED晶片12與該封裝件基板11間之接合強度應進一步增強。
為了避免此種電性短路，已建議一種方法，在該封裝件電極11b之接合表面上形成助焊劑(flux)，以便該LED晶片12可藉由熱而不施加壓力即能接合至該封裝件基板11。然而，此種助焊劑不僅會侵蝕該基板，也會增加該LED封裝件之耐熱性而降低該熱輻射特性。
並且，在使用垂直結構LED晶片之LED封裝件中，已在該LED晶片與該封裝件基板間存在著微弱接合強度的問題，此乃亟需改善。
本發明係用來解決先前技術之上述問題，因此，本發明之態樣係提供一種可避免由於用於接合LED晶片之接合材料而在半導體層間電性短路之LED封裝件。
本發明之另一態樣係提供一種可增加LED晶片及封裝件基板間之接合強度之LED封裝件。
根據本發明之態樣，本發明提供一種發光二極體封裝件，包含：封裝件基板；與該封裝件基板之上表面接合之發光二極體晶片；以及用於接合該發光二極體晶片至封裝件基板之接合材料，其中，該封裝件基板在其接合表面中形成有凹入部，用以容納該接合材料。
根據本發明之實施例，該LED晶片可以是具有接合至該封裝件基板之晶片電極之垂直結構LED晶片。
若該LED晶片係具有接合至該封裝件基板之晶片電極之垂直結構LED晶片，該接合材料可以是共晶合金(eutectic alloy)。在此情況中，該封裝件基板具有形成在其上表面上之封裝件電極，且該晶片電極與該封裝件電極可被共晶接合(eutectic bonded)。
若該晶片電極與封裝件電極共晶接合，該晶片電極可以由選自金－錫(Au－Sn)、金－鎳(Au－Ni)、金－鍺(Au－Ge)、金－矽(Au－Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料所製成。除此之外，該封裝件電極可以由選自金－錫(Au－Sn)、金－鎳(Au－Ni)、金－鍺(Au－Ge)、金－矽(Au－Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料所製成。例如，該晶片電極可以是金－錫(Au－Sn)層，而該封裝件電極可以是金(Au)層。相反地，該晶片電極可以是金(Au)層，而該封裝件電極可以是金－錫(Au－Sn)層。
根據本發明，該接合材料可以是除了該共晶合金(來自於共晶接合)外之各種材料。例如，該接合材料可以是鉛－錫(Pb－Sn)之焊膏(cream soldeT)等。
該封裝件基板可以由選自金屬、陶瓷、FR4、聚醯亞胺(polyimide)、矽(Si)以及雙順丁烯二醯亞胺三(BT)樹脂所組成群組之其中一者所製成。該LED封裝件可進一步包含在該封裝件基板與該封裝件電極間所形成之鍍層。在此情況中，該鍍層可以由選自金(Au)、鎳(Ni)、鉑(Pt)、鋁(Al)以及銀(Ag)所組成群組之其中一者所製成。
根據本發明之另一實施例，該LED晶片可以是具有例如藍寶石(sapphire)基板之絕緣基板之水平結構LED晶片。在此情況中，該絕緣基板係與該封裝件基板之接合表面接合，且該接合材料可包含環氧樹脂。特別地，該環氧樹脂可以是銀(Ag)環氧樹脂。
較佳地，該凹入部形成為網狀形狀。該接合材料較佳完全覆蓋該凹入部。該凹入部可具有各種剖面形狀，例如選自矩形、三角形以及半圓形所組成群組之其中一者。
根據本發明，該凹入部係形成在該晶片接合之封裝件基板之接合表面中。此凹入部容納該接合材料，並且提供通路(passage)給該接合材料，從而避免由於該接合材料額外的量所造成之電性短路。此外，該凹入部作用為增加該晶片接合之LED晶片與該封裝件基板間之強度。為了避免該電性短路與增加接合強度，該凹入部較佳形成為網狀形狀。
茲將本發明之示範實施例參照附圖來作詳細描述。然而本發明可以許多不同形式具體化，而不應被解釋為侷限於本文所提出之實施例。更確切地說，提供這些實施例使得此揭露內容會是徹底且完整的，且將完全傳遞本發明之範疇給在此技術領域熟知此技藝者。在圖式中，為了清晰起見，可能誇大形狀及大小，且全文使用相同的元件符號以標出相同或類似的組件。
第2圖係根據本發明之實施例來說明LED封裝件之剖面圖。參照第2圖，LED封裝件100包含LED晶片120及該LED晶片120固定於其上之封裝件基板110。該LED晶片120係為包含如SiC之導電材料製成之晶片基板121之垂直結構LED晶片。在該晶片基板121上，形成數個半導體層123。該等半導體層123包含第一導電性類型之半導體層123a、主動層123b、以及第二導電性類型之半導體層123c。在此，該第一導電性與第二導電性類型可以分別是n型及p型。相反地，該第一導電性與第二導電性類型可以分別是p型及n型。除此之外，該LED晶片120包含接合至該封裝件基板110之接合表面之晶片電極122。該等半導體層123藉由從該晶片基板121與該晶片電極122所施加的電壓來接收電流，從而在該主動層123b發光。
封裝件基板110具有在其上表面所形成之基板電極111。鍍層(plating layer)112可在該封裝件基板110與基板電極111間形成。該鍍層112可以由選自例如金(Au)、鎳(Ni)、鉑(Pt)、鋁(Al)以及銀(Ag)所組成群組之材料來製成。該基板電極111係與該晶片電極122接合以供應電壓至晶片電極122。該封裝件電極111與該晶片電極122係藉由導電接合材料130來接合。
如第2圖所示，該封裝件基板110具有在其接合表面中所形成之凹入部(recess)113以容納該導電接合材料130額外的量。由於帶有如先前技術(見第1圖)之平面接合表面，該導電接合材料130額外的量可能在晶片接合期間由所施加的壓力而被擠出該介面接合表面。然而，該凹入部113容納該導電接合材料130額外的量，因而避免該接合材料130被擠出該接合表面。因此，可有效避免在該等半導體層123間之習知有問題之電性短路。
除此之外，該凹入部113界定了在該接合表面中的凹痕(indentation)，增加了實質接合區域，且增加了該封裝件基板110與該LED晶片120間之接合強度。在該晶片接合期間所增加之接合強度之效應不僅可應用到接合垂直結構LED晶片的情況，也可應用到接合水平結構LED晶片的情況(稍後描述)。
該凹入部113之表面在平面圖上可具有各種形狀。特別地，該凹入部113較佳形成為網狀形狀(net shape)。此種網狀凹入部113之範例係說明於第4圖中。參照第4圖，該封裝件基板110具有在其接合表面中所形成之網狀凹入部113。此種網狀凹入部113提供通路給該接合材料130，從而在該晶片接合期間有效容納該導電接合材料130額外的量。
該凹入部113可具有各種剖面之形狀。第2圖例示具有大約矩形剖面之凹入部113，但本發明不侷限於此。例如，該凹入部113可具有三角形或半圓形剖面。該凹入部113可藉由對該封裝件基板110上進行之化學蝕刻、打孔(punching)或衝壓(stamping)製程來形成。
如第2圖所示，該導電接合材料130較佳完全覆蓋用於接合之凹入部113。這是因為若空的空間(或氣泡)在該封裝件電極111與該導電接合材料130間形成，可能減弱接合強度或降低熱輻射特性。因此，該凹入部113之深度較佳根據該導電接合材料130之厚度作適當地調整。
根據本發明之實施例，該封裝件基板110與該LED晶片120可以被共晶接合(eutectic bonded)。在這情況中，該導電接合材料130可以是來自該共晶接合之共晶合金(eutectic alloy)。該封裝件基板110與該LED晶片120間之共晶接合發生在封裝件電極111與該晶片電極122之間，此乃可被共晶接合之金屬所製成。
為了該封裝件電極111與該晶片電極122間之共晶接合，該晶片電極122可以由選自金－錫(Au－Sn)、金－鎳(Au－Ni)、金－鍺(Au－Ge)、金－矽(Au－Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料所製成。此外，該基板電極111也可以由選自金－錫(Au－Sn)、金－鎳(Au－Ni)、金－鍺(Au－Ge)、金－矽(Au－Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料所製成。
在示範的實施例中，該晶片電極122可以由金－錫(Au－Sn)所製成且該基板電極111可以由金(Au)所製成。例如，該晶片電極122可以由金：錫重量比為8：2之金錫(Au－Sn)來製成，且該基板電極111可以由金(Au)所製成。當金－錫(Au－Sn)晶片電極122置於與金(Au)基板電極111接觸而施加熱與壓力時，該等電極122與111之接觸部份會融化，因而金－錫(Au－Sn)共晶混合物(共晶合金)係來自該等電極122與111的介面所製成。此共晶合金具有預定之金：錫(Au：Sn)組成比例，並且作用為導電接合材料130。該共晶合金製成之導電接合材料130允許該LED晶片120更堅固地接著至該基板電極111。該共晶接合不僅能實現高接合強度，而且具有不需額外施加之個別接合材料之優點。如替代之實施例，該晶片電極122可由金(Au)製成，且該基板電極111可由金－錫(Au－Sn)製成。
該LED晶片120可藉由除了共晶合金(自該合金接合產生)外之各種接合材料接合至該封裝件基板110。例如，該LED晶片120可使用例如鉛－錫(Pb－Sn)之焊膏(cream solder)所製成之個別接合材料130接合至封裝件基板110。此種焊膏可在晶片接合前預先施加在該晶片電極122或該封裝件電極111上。
該封裝件基板110不僅作用為用於固定該LED晶片120之次載具(submount)，而且也作為自該LED晶片120所產生的熱輻射至外面之散熱片(heat sink)。因此，該封裝件基板110較佳由例如鋁(Al)或銅(Cu)、陶瓷或矽(Si)之高導熱性金屬製成。除此之外，該封裝件基板110可由般使用之FR4、聚醯亞胺(polyimide)或BT樹脂製成。為了易於將從LED晶片120所產生的熱輻射到外界，該凹入部113較佳由該接合材料130完全覆蓋，因為在該凹入部113所形成之空的空間或氣泡可能阻礙熱輻射。
第3圖係根據本發明之另一實施例說明LED封裝件之剖面圖。在第3圖所顯示的實施例中，該LED晶片120’係水平結構LED晶片，其中p電極122a’與n電極122b’均配置在相同側上。該LED晶片120’包含由例如藍寶石(sapphire)之絕緣材料製成之晶片基板121’以及在該晶片基板121’上所形成之半導體層123’。該半導體層123’包含第一導電性類型(例如，p－型)之半導體層123a’、主動層123b’以及第二導電性類型(例如n－型)之半導體層123c’。
鍍層112，及封裝件電極111’均在封裝件基板110’之上表面形成。該封裝件基板110’、鍍層112’以及基板電極111’可由如在先前所描述之實施例(見第2圖)以相同材料製成。該LED晶片120’之晶片基板121’係藉由接合材料130’接合至該封裝件基板110’之接合表面。該接合材料130’較佳由具有卓越之導熱性之銀環氧樹脂(Agepoxy resin)製成，但本發明不限於此。
如第3圖所示，用於容納該接合材料130’之凹入部113’於此實施例中同樣於該封裝件基板110’之接合表面中形成。此凹入部113’增加了接合面積，從而增加該LED晶片120’與該封裝件基板110’間之接合強度。亦即是，不僅該凹入部113’之側表面及下表面可用作為接合區域，而且該凹入部113’界定了該接合表面中的凹痕，從而導致比先前技術更高之接合強度。特別地，如第4圖所示的情況，該凹入部113’在平面圖之接合表面上具有網狀形狀，進一步增加該接合強度。
根據如上所述之本發明，凹入部係在該封裝件基板之接合表面中形成，以容納接合材料額外的量，從而有效避免由於接合材料而在半導體層間之電性短路。此外，該凹入部界定了接合表面中的凹痕，增加LED晶片與封裝件基板間之接合強度。此依次允許LED封裝件具有高可靠度。
儘管本發明已顯示及描述與示範的實施例有關，但對在此技術領域具有通常技藝者而言，在不脫離由附加之申請專利範圍所界定之本發明之精神及範疇下可做修改與變化是明顯的。
10．．．LED封裝件
11．．．封裝件基板
11a、11b．．．基板電極
12．．．LED晶片
12a．．．晶片基板
12b．．．晶片電極
12c．．．半導體層
13．．．接合材料
100、100’．．．LED封裝件
110、110’．．．封裝件基板
111、111’．．．基板電極
112、112’．．．鍍層
113、113’．．．凹入部
120、120’．．．LED晶片
121、121’．．．晶片基板
122、122’．．．晶片電極
122a’．．．p電極
122b’．．．n電極
123、123’．．．半導體層
123a、123a’．．．第一導電性類型之半導體層
123b、123b’．．．主動層
123c、123c’．．．第二導電性類型之半導體層
130、130’．．．接合材料
從以上詳細說明並結合附圖，本發明之上述及其它態樣、特徵、以及其它優點將會更清晰瞭解，其中：第1圖係說明習知LED封裝件之剖面圖；第2圖係根據本發明之實施例來說明LED封裝件之剖面圖；第3圖係根據本發明之另一實施例來說明LED封裝件之剖面圖；以及第4圖係根據本發明之實施例來說明在該LED封裝件之封裝件基板所形成之凹入部。
100．．．LED封裝件
110．．．封裝件基板
111．．．基板電極
112．．．鍍層
113．．．凹入部
120．．．LED晶片
121．．．晶片基板
122．．．晶片電極
123．．．半導體層
123a．．．第一導電性類型之半導體層
123b．．．主動層
123c．．．第二導電性類型之半導體層
130．．．導電接合材料

Claims (16)

  1. 一種發光二極體封裝件，包括：封裝件基板，具有形成於其上表面上之封裝件電極；與該封裝件基板之上表面接合之發光二極體晶片；用於接合該發光二極體晶片至該封裝件基板之接合材料；以及在該封裝件基板與該封裝件電極間所形成之鍍層，其中，該封裝件基板僅在其接合表面中形成有凹入部以僅用於容納該接合材料，而且在該該封裝件基板表面上的非接合區域不形成有該凹入部，且其中該凹入部具有複數個槽，各該複數個槽具有小於該封裝件基板所具之寬度；以及其中，該凹入部係形成為網狀形狀。
  2. 如申請專利範圍第1項之發光二極體封裝件，其中，該LED晶片包括具有與該封裝件基板接合之晶片電極之垂直結構LED晶片。
  3. 如申請專利範圍第2項之發光二極體封裝件，其中，該結合材料包括共晶合金。
  4. 如申請專利範圍第3項之發光二極體封裝件，其中，該封裝件基板具有形成於其上表面上之封裝件電極，且該晶片電極與該封裝件電極係共晶結合。
  5. 如申請專利範圍第4項之發光二極體封裝件，其中，該晶片電極包括選自金-錫(Au-Sn)、金-鎳(Au-Ni)、金- 鍺(Au-Ge)、金-矽(Au-Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料。
  6. 如申請專利範圍第4項之發光二極體封裝件，其中，該封裝件電極包括選自金-錫(Au-Sn)、金-鎳(Au-Ni)、金-鍺(Au-Ge)、金-矽(Au-Si)、金(Au)、錫(Sn)以及鎳(Ni)所組成群組之材料。
  7. 如申請專利範圍第4項之發光二極體封裝件，其中，該晶片電極包括金-錫(Au-Sn)層，而該封裝件電極包括金(Au)層。
  8. 如申請專利範圍第4項之發光二極體封裝件，其中，該晶片電極包括金(Au)層，而該封裝件電極包括金-錫(Au-Sn)層。
  9. 如申請專利範圍第1項之發光二極體封裝件，其中，該接合材料包括焊膏。
  10. 如申請專利範圍第1項之發光二極體封裝件，其中，該封裝件基板包括選自金屬、陶瓷、FR4、聚醯亞胺(polyimide)、矽以及BT樹脂所組成群組之其中一者。
  11. 如申請專利範圍第1項之發光二極體封裝件，其中，該鍍層包括選自金(Au)、鎳(Ni)、鉑(Pt)、鋁(Al)以及銀(Ag)所組成群組之其中一者。
  12. 如申請專利範圍第1項之發光二極體封裝件，其中，該LED晶片包括具有絕緣基板之水平結構LED晶片。
  13. 如申請專利範圍第12項之發光二極體封裝件，其中，該絕緣基板係與該封裝件基板之該接合表面接合，且該 接合材料包括環氧樹脂。
  14. 如申請專利範圍第13項之發光二極體封裝件，其中，該環氧樹脂包括銀(Ag)環氧樹脂。
  15. 如申請專利範圍第1項之發光二極體封裝件，其中，該接合材料完全覆蓋該凹入部。
  16. 如申請專利範圍第1項之發光二極體封裝件，其中，該凹入部具有選自矩形、三角形以及半圓形所組成群組之剖面形狀。
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