TWI352832B - - Google Patents
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- Publication number
- TWI352832B TWI352832B TW093125796A TW93125796A TWI352832B TW I352832 B TWI352832 B TW I352832B TW 093125796 A TW093125796 A TW 093125796A TW 93125796 A TW93125796 A TW 93125796A TW I352832 B TWI352832 B TW I352832B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- exposure
- optical system
- light beam
- illumination
- Prior art date
Links
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- 238000005286 illumination Methods 0.000 claims description 129
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- 238000004519 manufacturing process Methods 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003209211 | 2003-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200514133A TW200514133A (en) | 2005-04-16 |
| TWI352832B true TWI352832B (enExample) | 2011-11-21 |
Family
ID=34263960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093125796A TW200514133A (en) | 2003-08-28 | 2004-08-27 | Exposure method and equipment, as well as component manufacture method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7817249B2 (enExample) |
| EP (1) | EP1670041A4 (enExample) |
| JP (2) | JPWO2005022614A1 (enExample) |
| KR (1) | KR20060120629A (enExample) |
| TW (1) | TW200514133A (enExample) |
| WO (1) | WO2005022614A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104145205A (zh) * | 2012-02-01 | 2014-11-12 | 卡尔蔡司Smt有限责任公司 | 包括测量光学元件的测量系统的投射曝光设备 |
| TWI759621B (zh) * | 2018-09-20 | 2022-04-01 | 日商斯庫林集團股份有限公司 | 描繪裝置以及描繪方法 |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004099877A1 (de) | 2003-05-12 | 2004-11-18 | Carl Zeiss Smt Ag | Optische messvorrichtung und betriebsverfahren für ein optisches abbildungssystem |
| KR101328356B1 (ko) | 2004-02-13 | 2013-11-11 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| JP4569237B2 (ja) * | 2004-09-16 | 2010-10-27 | コニカミノルタオプト株式会社 | 光学装置 |
| JP4954615B2 (ja) * | 2005-06-13 | 2012-06-20 | オリンパス株式会社 | 走査型レーザ顕微鏡装置 |
| US20080204682A1 (en) * | 2005-06-28 | 2008-08-28 | Nikon Corporation | Exposure method and exposure apparatus, and device manufacturing method |
| JP5069232B2 (ja) | 2005-07-25 | 2012-11-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の投影対物レンズ |
| DE102005062618B4 (de) * | 2005-12-23 | 2008-05-08 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung und Abbildungsverfahren mit Bestimmung von Abbildungsfehlern |
| US7511799B2 (en) * | 2006-01-27 | 2009-03-31 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method |
| DE102006045838A1 (de) * | 2006-09-27 | 2008-04-03 | Carl Zeiss Sms Gmbh | Mikroskop zur Untersuchung von Masken mit unterschiedlicher Dicke |
| EP1918752A1 (en) * | 2006-11-06 | 2008-05-07 | Institut Curie | Method and apparatus for measuring optical power of a light beam produced in a microscope |
| ATE554427T1 (de) | 2007-01-22 | 2012-05-15 | Zeiss Carl Smt Gmbh | Verfahren zur verbesserung von bildgebungseigenschaften eines optischen systems und optisches system |
| DE102008006687A1 (de) | 2007-01-22 | 2008-07-24 | Carl Zeiss Smt Ag | Verfahren zum Verbessern von Abbildungseigenschaften eines optischen Systems sowie optisches System |
| KR100854878B1 (ko) | 2007-03-23 | 2008-08-28 | 주식회사 하이닉스반도체 | 반도체 소자의 노광 방법 |
| JP5329520B2 (ja) | 2007-03-27 | 2013-10-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 低角度で入射する補正光を用いる補正光学素子 |
| JP2009010131A (ja) * | 2007-06-27 | 2009-01-15 | Canon Inc | 露光装置及びデバイス製造方法 |
| EP2048540A1 (en) * | 2007-10-09 | 2009-04-15 | Carl Zeiss SMT AG | Microlithographic projection exposure apparatus |
| DE102008042356A1 (de) | 2008-09-25 | 2010-04-08 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| NL2003806A (en) * | 2008-12-15 | 2010-06-16 | Asml Netherlands Bv | Method for a lithographic apparatus. |
| US20100290020A1 (en) * | 2009-05-15 | 2010-11-18 | Shinichi Mori | Optical apparatus, exposure apparatus, exposure method, and method for producing device |
| CN102428408B (zh) * | 2009-05-16 | 2014-11-05 | 卡尔蔡司Smt有限责任公司 | 包括光学校正布置的用于半导体光刻的投射曝光设备 |
| JP5404216B2 (ja) | 2009-07-02 | 2014-01-29 | キヤノン株式会社 | 露光方法、露光装置及びデバイス製造方法 |
| NL2005449A (en) * | 2009-11-16 | 2012-04-05 | Asml Netherlands Bv | Lithographic method and apparatus. |
| JP5722074B2 (ja) * | 2010-02-25 | 2015-05-20 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置および方法 |
| EP2545358B1 (en) * | 2010-03-12 | 2016-10-12 | Cascade Microtech, Inc. | System for testing semiconductors |
| DE102010029651A1 (de) | 2010-06-02 | 2011-12-08 | Carl Zeiss Smt Gmbh | Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern |
| JP5661172B2 (ja) | 2010-04-23 | 2015-01-28 | カール・ツァイス・エスエムティー・ゲーエムベーハー | リソグラフィ系の光学要素の操作を含むリソグラフィ系を作動させる方法 |
| DE102010041298A1 (de) | 2010-09-24 | 2012-03-29 | Carl Zeiss Smt Gmbh | EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle |
| DE102010041528A1 (de) | 2010-09-28 | 2012-03-29 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| TWI542952B (zh) | 2010-12-02 | 2016-07-21 | Asml控股公司 | 圖案化裝置支撐件 |
| KR101529807B1 (ko) | 2011-01-20 | 2015-06-17 | 칼 짜이스 에스엠티 게엠베하 | 투영 노광 도구를 조작하는 방법 |
| DE102011004375B3 (de) * | 2011-02-18 | 2012-05-31 | Carl Zeiss Smt Gmbh | Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage |
| US8625078B2 (en) * | 2011-04-06 | 2014-01-07 | Nanya Technology Corp. | Illumination design for lens heating mitigation |
| US8736814B2 (en) * | 2011-06-13 | 2014-05-27 | Micron Technology, Inc. | Lithography wave-front control system and method |
| JP5863974B2 (ja) | 2011-09-29 | 2016-02-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の投影対物レンズ |
| DE102012216286A1 (de) | 2011-09-30 | 2013-04-04 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit optimiertem Messsystem |
| JP5666496B2 (ja) * | 2012-01-27 | 2015-02-12 | 株式会社目白ゲノッセン | 計測装置 |
| WO2013156041A1 (en) | 2012-04-18 | 2013-10-24 | Carl Zeiss Smt Gmbh | A microlithographic apparatus and a method of changing an optical wavefront in an objective of such an apparatus |
| US10133184B2 (en) | 2012-04-25 | 2018-11-20 | Nikon Corporation | Using customized lens pupil optimization to enhance lithographic imaging in a source-mask optimization scheme |
| EP2857820A4 (en) | 2012-05-30 | 2016-01-27 | Nikon Corp | METHOD AND DEVICE FOR WAVE FRONT MEASUREMENT AND EXPOSURE METHOD AND DEVICE |
| DE102012212758A1 (de) | 2012-07-20 | 2014-01-23 | Carl Zeiss Smt Gmbh | Systemkorrektur aus langen Zeitskalen |
| DE102013203032A1 (de) | 2013-02-25 | 2014-02-27 | Carl Zeiss Smt Gmbh | Optische Anordnung mit einem optischen Element und einem zusätzlichen Wärmeleitelement |
| DE102013205567A1 (de) * | 2013-03-28 | 2014-03-06 | Carl Zeiss Smt Gmbh | Mikrolithographische Projektionsbelichtungsanlage mit einem variablen Transmissionsfilter |
| TWI710866B (zh) * | 2014-05-30 | 2020-11-21 | 日商尼康股份有限公司 | 用於微影步驟之電腦程式及電腦可讀取記錄媒體 |
| JP2016148829A (ja) * | 2015-02-05 | 2016-08-18 | 株式会社目白ゲノッセン | 観察装置 |
| WO2016125325A1 (ja) * | 2015-02-05 | 2016-08-11 | 株式会社目白ゲノッセン | 観察装置 |
| CN107667315B (zh) * | 2015-05-29 | 2021-04-16 | Asml荷兰有限公司 | 使用对源辐射的角分布的多次采样的光刻术模拟 |
| DE102017204619A1 (de) | 2016-04-05 | 2017-10-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren, Projektionsobjektiv und Projektionsbelichtungsanlage für die Mikrolithographie |
| EP3485515A4 (en) * | 2016-07-13 | 2020-04-01 | Applied Materials, Inc. | Micro led array as illumination source |
| DE102016218744A1 (de) * | 2016-09-28 | 2018-03-29 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit Flüssigkeitsschicht zur Wellenfrontkorrektur |
| JP6820717B2 (ja) | 2016-10-28 | 2021-01-27 | 株式会社日立ハイテク | プラズマ処理装置 |
| DE102016221878A1 (de) | 2016-11-08 | 2017-11-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie und deren Komponenten sowie Herstellungsverfahren derartiger Komponenten |
| JP7083645B2 (ja) | 2018-01-11 | 2022-06-13 | Ｊｓｗアクティナシステム株式会社 | レーザ処理装置、レーザ処理方法及び半導体装置の製造方法 |
| DE102018202687A1 (de) | 2018-02-22 | 2018-05-03 | Carl Zeiss Smt Gmbh | Herstellungsverfahren für Komponenten einer Projektionsbelichtungsanlage für die Halbleiterlithographie und Projektionsbelichtungsanlage |
| JP6924235B2 (ja) * | 2019-09-19 | 2021-08-25 | キヤノン株式会社 | 露光方法、露光装置、物品製造方法、および半導体デバイスの製造方法 |
| JP7378265B2 (ja) * | 2019-10-18 | 2023-11-13 | キヤノン株式会社 | 露光装置、露光方法及び物品の製造方法 |
| WO2021192210A1 (ja) | 2020-03-27 | 2021-09-30 | 株式会社日立ハイテク | 半導体製造方法 |
| DE102020207752A1 (de) * | 2020-06-23 | 2021-12-23 | Carl Zeiss Smt Gmbh | Heizanordnung und Verfahren zum Heizen eines optischen Elements |
| US11287751B2 (en) * | 2020-07-29 | 2022-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for lens heating control |
| DE102021206203A1 (de) | 2021-06-17 | 2022-12-22 | Carl Zeiss Smt Gmbh | Heizanordnung und Verfahren zum Heizen eines optischen Elements |
| CN117321747A (zh) * | 2022-03-16 | 2023-12-29 | 株式会社日立高新技术 | 温度检测装置以及半导体处理装置 |
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-
2004
- 2004-08-25 EP EP04786428A patent/EP1670041A4/en not_active Withdrawn
- 2004-08-25 KR KR1020067004074A patent/KR20060120629A/ko not_active Ceased
- 2004-08-25 WO PCT/JP2004/012215 patent/WO2005022614A1/ja not_active Ceased
- 2004-08-25 JP JP2005513447A patent/JPWO2005022614A1/ja active Pending
- 2004-08-27 TW TW093125796A patent/TW200514133A/zh not_active IP Right Cessation
-
2006
- 2006-02-28 US US11/362,817 patent/US7817249B2/en not_active Expired - Lifetime
-
2010
- 2010-03-29 JP JP2010076427A patent/JP5099933B2/ja not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104145205A (zh) * | 2012-02-01 | 2014-11-12 | 卡尔蔡司Smt有限责任公司 | 包括测量光学元件的测量系统的投射曝光设备 |
| CN104145205B (zh) * | 2012-02-01 | 2016-09-28 | 卡尔蔡司Smt有限责任公司 | 包括测量光学元件的测量系统的投射曝光设备 |
| TWI759621B (zh) * | 2018-09-20 | 2022-04-01 | 日商斯庫林集團股份有限公司 | 描繪裝置以及描繪方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1670041A4 (en) | 2007-10-17 |
| JP5099933B2 (ja) | 2012-12-19 |
| TW200514133A (en) | 2005-04-16 |
| US20060244940A1 (en) | 2006-11-02 |
| KR20060120629A (ko) | 2006-11-27 |
| EP1670041A1 (en) | 2006-06-14 |
| JPWO2005022614A1 (ja) | 2007-11-01 |
| JP2010171447A (ja) | 2010-08-05 |
| US7817249B2 (en) | 2010-10-19 |
| WO2005022614A1 (ja) | 2005-03-10 |
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