TW200514133A - Exposure method and equipment, as well as component manufacture method - Google Patents

Exposure method and equipment, as well as component manufacture method

Info

Publication number
TW200514133A
TW200514133A TW093125796A TW93125796A TW200514133A TW 200514133 A TW200514133 A TW 200514133A TW 093125796 A TW093125796 A TW 093125796A TW 93125796 A TW93125796 A TW 93125796A TW 200514133 A TW200514133 A TW 200514133A
Authority
TW
Taiwan
Prior art keywords
exposure light
optical system
illuminated
reticle
exposure
Prior art date
Application number
TW093125796A
Other languages
English (en)
Chinese (zh)
Other versions
TWI352832B (enExample
Inventor
Yusaku Uehara
Original Assignee
Nippon Kogaku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kogaku Kk filed Critical Nippon Kogaku Kk
Publication of TW200514133A publication Critical patent/TW200514133A/zh
Application granted granted Critical
Publication of TWI352832B publication Critical patent/TWI352832B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
TW093125796A 2003-08-28 2004-08-27 Exposure method and equipment, as well as component manufacture method TW200514133A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003209211 2003-08-28

Publications (2)

Publication Number Publication Date
TW200514133A true TW200514133A (en) 2005-04-16
TWI352832B TWI352832B (enExample) 2011-11-21

Family

ID=34263960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125796A TW200514133A (en) 2003-08-28 2004-08-27 Exposure method and equipment, as well as component manufacture method

Country Status (6)

Country Link
US (1) US7817249B2 (enExample)
EP (1) EP1670041A4 (enExample)
JP (2) JPWO2005022614A1 (enExample)
KR (1) KR20060120629A (enExample)
TW (1) TW200514133A (enExample)
WO (1) WO2005022614A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12011777B2 (en) 2018-01-11 2024-06-18 Jsw Aktina System Co., Ltd Laser processing apparatus, laser processing method, and method for manufacturing semiconductor device

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US7511799B2 (en) 2006-01-27 2009-03-31 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method
DE102006045838A1 (de) * 2006-09-27 2008-04-03 Carl Zeiss Sms Gmbh Mikroskop zur Untersuchung von Masken mit unterschiedlicher Dicke
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DE102008006687A1 (de) 2007-01-22 2008-07-24 Carl Zeiss Smt Ag Verfahren zum Verbessern von Abbildungseigenschaften eines optischen Systems sowie optisches System
JP5193227B2 (ja) 2007-01-22 2013-05-08 カール・ツァイス・エスエムティー・ゲーエムベーハー 半導体リソグラフィシステム及びその使用方法
KR100854878B1 (ko) * 2007-03-23 2008-08-28 주식회사 하이닉스반도체 반도체 소자의 노광 방법
DE102008016011A1 (de) 2007-03-27 2008-10-02 Carl Zeiss Smt Ag Korrektur optischer Elemente mittels flach eingestrahltem Korrekturlicht
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DE102008042356A1 (de) 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
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US20100290020A1 (en) * 2009-05-15 2010-11-18 Shinichi Mori Optical apparatus, exposure apparatus, exposure method, and method for producing device
KR101626737B1 (ko) 2009-05-16 2016-06-01 칼 짜이스 에스엠테 게엠베하 광학 교정 배열체를 포함하는 반도체 리소그래피를 위한 투사 노광 장치
JP5404216B2 (ja) * 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
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JP5722074B2 (ja) * 2010-02-25 2015-05-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
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Publication number Priority date Publication date Assignee Title
US12011777B2 (en) 2018-01-11 2024-06-18 Jsw Aktina System Co., Ltd Laser processing apparatus, laser processing method, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20060120629A (ko) 2006-11-27
EP1670041A1 (en) 2006-06-14
US7817249B2 (en) 2010-10-19
EP1670041A4 (en) 2007-10-17
WO2005022614A1 (ja) 2005-03-10
JP2010171447A (ja) 2010-08-05
US20060244940A1 (en) 2006-11-02
TWI352832B (enExample) 2011-11-21
JPWO2005022614A1 (ja) 2007-11-01
JP5099933B2 (ja) 2012-12-19

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