TWI350589B - A semiconductor device and a method of manufacturing the same - Google Patents
A semiconductor device and a method of manufacturing the sameInfo
- Publication number
- TWI350589B TWI350589B TW093109413A TW93109413A TWI350589B TW I350589 B TWI350589 B TW I350589B TW 093109413 A TW093109413 A TW 093109413A TW 93109413 A TW93109413 A TW 93109413A TW I350589 B TWI350589 B TW I350589B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003124244 | 2003-04-28 | ||
JP2004020210A JP4477886B2 (ja) | 2003-04-28 | 2004-01-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200503272A TW200503272A (en) | 2005-01-16 |
TWI350589B true TWI350589B (en) | 2011-10-11 |
Family
ID=33302272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093109413A TWI350589B (en) | 2003-04-28 | 2004-04-06 | A semiconductor device and a method of manufacturing the same |
Country Status (5)
Country | Link |
---|---|
US (2) | US7118972B2 (zh) |
JP (1) | JP4477886B2 (zh) |
KR (1) | KR20040093404A (zh) |
CN (1) | CN100411147C (zh) |
TW (1) | TWI350589B (zh) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003345854A (ja) * | 2002-05-23 | 2003-12-05 | Mitsubishi Electric Corp | デザインルール作成システム |
US7018925B2 (en) * | 2003-01-06 | 2006-03-28 | Texas Instruments Incorporated | Post high voltage gate oxide pattern high-vacuum outgas surface treatment |
JP2004349377A (ja) * | 2003-05-21 | 2004-12-09 | Sharp Corp | 半導体装置及びその製造方法 |
JP2004356562A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US7091089B2 (en) * | 2004-06-25 | 2006-08-15 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
US7091130B1 (en) * | 2004-06-25 | 2006-08-15 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
TWI247391B (en) * | 2004-09-23 | 2006-01-11 | Powerchip Semiconductor Corp | Method of fabricating a non-volatile memory |
US7361543B2 (en) * | 2004-11-12 | 2008-04-22 | Freescale Semiconductor, Inc. | Method of forming a nanocluster charge storage device |
JP4971593B2 (ja) * | 2005-01-11 | 2012-07-11 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
US7183159B2 (en) * | 2005-01-14 | 2007-02-27 | Freescale Semiconductor, Inc. | Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices |
JP5001522B2 (ja) * | 2005-04-20 | 2012-08-15 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
KR100684899B1 (ko) * | 2005-05-18 | 2007-02-20 | 삼성전자주식회사 | 비휘발성 기억 장치 |
US20070141788A1 (en) * | 2005-05-25 | 2007-06-21 | Ilan Bloom | Method for embedding non-volatile memory with logic circuitry |
JP4316540B2 (ja) * | 2005-06-24 | 2009-08-19 | 株式会社東芝 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
US8003470B2 (en) | 2005-09-13 | 2011-08-23 | Infineon Technologies Ag | Strained semiconductor device and method of making the same |
JP2007103862A (ja) * | 2005-10-07 | 2007-04-19 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007109954A (ja) * | 2005-10-14 | 2007-04-26 | Sharp Corp | 半導体記憶装置、その製造方法及びその動作方法 |
KR20070053071A (ko) * | 2005-11-19 | 2007-05-23 | 삼성전자주식회사 | 다층의 터널링층을 포함한 비휘발성 메모리 소자 |
JP5013050B2 (ja) * | 2006-06-14 | 2012-08-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7432158B1 (en) | 2006-07-25 | 2008-10-07 | Freescale Semiconductor, Inc. | Method for retaining nanocluster size and electrical characteristics during processing |
US7445984B2 (en) | 2006-07-25 | 2008-11-04 | Freescale Semiconductor, Inc. | Method for removing nanoclusters from selected regions |
CN101123252B (zh) * | 2006-08-10 | 2011-03-16 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
JP5059437B2 (ja) * | 2007-02-06 | 2012-10-24 | 株式会社Genusion | 不揮発性半導体記憶装置 |
TW200839891A (en) * | 2007-03-30 | 2008-10-01 | Promos Technologies Inc | Method for preparing a MOS transistor |
WO2009016739A1 (ja) | 2007-07-31 | 2009-02-05 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
US7745344B2 (en) * | 2007-10-29 | 2010-06-29 | Freescale Semiconductor, Inc. | Method for integrating NVM circuitry with logic circuitry |
US8394683B2 (en) * | 2008-01-15 | 2013-03-12 | Micron Technology, Inc. | Methods of forming semiconductor constructions, and methods of forming NAND unit cells |
JP2009224425A (ja) * | 2008-03-14 | 2009-10-01 | Renesas Technology Corp | 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置 |
US20100127331A1 (en) * | 2008-11-26 | 2010-05-27 | Albert Ratnakumar | Asymmetric metal-oxide-semiconductor transistors |
US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
JP5202473B2 (ja) | 2009-08-18 | 2013-06-05 | シャープ株式会社 | 半導体装置の製造方法 |
JP5550286B2 (ja) * | 2009-08-26 | 2014-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5331618B2 (ja) | 2009-08-28 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20110147837A1 (en) * | 2009-12-23 | 2011-06-23 | Hafez Walid M | Dual work function gate structures |
JP5610930B2 (ja) * | 2010-08-30 | 2014-10-22 | 三菱電機株式会社 | 半導体装置 |
CN103187368B (zh) * | 2011-12-31 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 嵌入式闪存中晶体管的形成方法 |
JP6045873B2 (ja) * | 2012-10-05 | 2016-12-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8871598B1 (en) * | 2013-07-31 | 2014-10-28 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology |
US9082651B2 (en) | 2013-09-27 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices and method of forming same |
US9076681B2 (en) | 2013-09-27 | 2015-07-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices and method of fabricating same |
US8999833B1 (en) * | 2013-10-04 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for controlling gate dimensions of memory devices |
US9559177B2 (en) | 2013-12-03 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices and method of fabricating same |
US9524982B2 (en) * | 2015-03-09 | 2016-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9773733B2 (en) * | 2015-03-26 | 2017-09-26 | Mie Fujitsu Semiconductor Limited | Semiconductor device |
JP6385873B2 (ja) * | 2015-03-30 | 2018-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5934416B1 (ja) | 2015-06-01 | 2016-06-15 | 株式会社フローディア | メモリセルおよび不揮発性半導体記憶装置 |
JP6683488B2 (ja) * | 2016-02-03 | 2020-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6880595B2 (ja) * | 2016-08-10 | 2021-06-02 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
CN106298795A (zh) * | 2016-10-10 | 2017-01-04 | 上海华虹宏力半导体制造有限公司 | 改善存储器装置中记忆体单元和高压器件漏电的方法 |
JP2018166133A (ja) | 2017-03-28 | 2018-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその動作方法 |
JP6875188B2 (ja) * | 2017-04-25 | 2021-05-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6824115B2 (ja) * | 2017-06-19 | 2021-02-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN110770898A (zh) * | 2019-04-15 | 2020-02-07 | 长江存储科技有限责任公司 | 具有处理器和动态随机存取存储器的键合半导体器件及其形成方法 |
EP3891806A4 (en) | 2019-04-15 | 2022-10-12 | Yangtze Memory Technologies Co., Ltd. | UNITED SEMICONDUCTOR DEVICES HAVING HETEROGENEOUS PROCESSOR AND MEMORIES AND METHODS FOR FORMING THEM |
CN110731012B (zh) | 2019-04-15 | 2021-01-29 | 长江存储科技有限责任公司 | 具有处理器和异构存储器的一体化半导体器件及其形成方法 |
CN110720143B (zh) | 2019-04-30 | 2021-01-29 | 长江存储科技有限责任公司 | 具有处理器和nand闪存的键合半导体器件及其形成方法 |
EP3891788A4 (en) * | 2019-04-30 | 2022-10-26 | Yangtze Memory Technologies Co., Ltd. | RELATED UNIFIED SEMICONDUCTOR CHIPS AND METHODS OF MANUFACTURE AND OPERATION THEREOF |
CN112582408A (zh) * | 2020-12-09 | 2021-03-30 | 长江先进存储产业创新中心有限责任公司 | 一种半导体器件及其制作方法 |
CN113097138B (zh) * | 2021-03-27 | 2023-04-18 | 长江存储科技有限责任公司 | 半导体器件及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102428A (ja) * | 1991-10-07 | 1993-04-23 | Sony Corp | 半導体メモリ装置及びその製造方法 |
JPH06181293A (ja) * | 1992-12-14 | 1994-06-28 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH07176729A (ja) * | 1993-12-17 | 1995-07-14 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5674762A (en) * | 1995-08-28 | 1997-10-07 | Motorola, Inc. | Method of fabricating an EPROM with high voltage transistors |
TW420874B (en) * | 1998-05-04 | 2001-02-01 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device |
JP3240999B2 (ja) * | 1998-08-04 | 2001-12-25 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
JP4304778B2 (ja) * | 1998-09-08 | 2009-07-29 | 株式会社デンソー | 半導体装置 |
US6319775B1 (en) * | 1999-10-25 | 2001-11-20 | Advanced Micro Devices, Inc. | Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device |
JP2004241558A (ja) * | 2003-02-05 | 2004-08-26 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法、半導体集積回路及び不揮発性半導体記憶装置システム |
-
2004
- 2004-01-28 JP JP2004020210A patent/JP4477886B2/ja not_active Expired - Fee Related
- 2004-04-06 TW TW093109413A patent/TWI350589B/zh active
- 2004-04-21 KR KR1020040027430A patent/KR20040093404A/ko not_active Application Discontinuation
- 2004-04-27 CN CNB2004100372231A patent/CN100411147C/zh not_active Expired - Lifetime
- 2004-04-28 US US10/833,118 patent/US7118972B2/en active Active
-
2006
- 2006-05-31 US US11/443,252 patent/US7663179B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200503272A (en) | 2005-01-16 |
JP4477886B2 (ja) | 2010-06-09 |
KR20040093404A (ko) | 2004-11-05 |
US7663179B2 (en) | 2010-02-16 |
US20040212019A1 (en) | 2004-10-28 |
US20060214256A1 (en) | 2006-09-28 |
CN1542974A (zh) | 2004-11-03 |
US7118972B2 (en) | 2006-10-10 |
CN100411147C (zh) | 2008-08-13 |
JP2004349680A (ja) | 2004-12-09 |
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