JP5331618B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5331618B2 JP5331618B2 JP2009197858A JP2009197858A JP5331618B2 JP 5331618 B2 JP5331618 B2 JP 5331618B2 JP 2009197858 A JP2009197858 A JP 2009197858A JP 2009197858 A JP2009197858 A JP 2009197858A JP 5331618 B2 JP5331618 B2 JP 5331618B2
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- Prior art keywords
- gate electrode
- film
- insulating film
- sidewall spacer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 69
- 238000005530 etching Methods 0.000 claims description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 230000015654 memory Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 230000005669 field effect Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
前記半導体基板上、前記第1ゲート電極上、及び前記第2ゲート電極上に第1絶縁膜を、前記第1ゲート電極及び前記第2ゲート電極による凹凸が残る厚さに形成する工程と、
前記第1絶縁膜上に、前記第2ゲート電極を覆い、かつ前記第1ゲート電極を覆わないエッチングストッパ膜を形成する工程と、
前記第1絶縁膜上及び前記エッチングストッパ膜上に、第2絶縁膜を前記第1ゲート電極による凹凸が残る厚さに形成する工程と、
前記エッチングストッパ膜をストッパーとした異方性エッチングを行い、前記第2ゲート電極上に位置する前記第2絶縁膜を除去し、かつ前記第1トランジスタの第1サイドウォールスペーサを形成する工程と、
前記エッチングストッパ膜を除去する工程と、
前記第1絶縁膜を異方性エッチングすることにより、前記第2ゲート電極に第2サイドウォールスペーサを形成し、かつ前記第1ゲート電極に、前記第1サイドウォールスペーサの内側に位置する第3サイドウォールスペーサを形成する工程と、
を備える半導体装置の製造方法が提供される。
2 素子分離酸化膜
3a ゲート電極
3b ゲート電極
4 酸化シリコン膜
5 シリコン窒化膜
6 第1のサイドウォールスペーサ層
7 フォトレジスト膜
8 酸化シリコン膜
11 半導体基板
12 素子分離膜
13a 第1ゲート電極
13b 第2ゲート電極
16 第1絶縁膜
16a 第3サイドウォールスペーサ
16b 第2サイドウォールスペーサ
17 レジストパターン
18 第2絶縁膜
18a 第1サイドウォールスペーサ
18b サイドウォールスペーサ
19 エッチングストッパ膜
Claims (4)
- 半導体基板上に、第1トランジスタの第1ゲート電極、及び第2トランジスタの第2ゲート電極を形成する工程と、
前記半導体基板上、前記第1ゲート電極上、及び前記第2ゲート電極上に第1絶縁膜を、前記第1ゲート電極及び前記第2ゲート電極による凹凸が残る厚さに形成する工程と、
前記第1絶縁膜上に、前記第2ゲート電極を覆い、かつ前記第1ゲート電極を覆わないエッチングストッパ膜を形成する工程と、
前記第1絶縁膜上及び前記エッチングストッパ膜上に、第2絶縁膜を前記第1ゲート電極による凹凸が残る厚さに形成する工程と、
前記エッチングストッパ膜をストッパーとした異方性エッチングを行い、前記第2ゲート電極上に位置する前記第2絶縁膜を除去し、かつ前記第1トランジスタの第1サイドウォールスペーサを形成する工程と、
前記エッチングストッパ膜を除去する工程と、
前記第1絶縁膜を異方性エッチングすることにより、前記第2ゲート電極に第2サイドウォールスペーサを形成し、かつ前記第1ゲート電極に、前記第1サイドウォールスペーサの内側に位置する第3サイドウォールスペーサを形成する工程と、
を備える半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第2絶縁膜は、前記第1絶縁膜と同一の物質により形成されている半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法において、
前記第2絶縁膜は酸化シリコン膜であり、
前記エッチングストッパ膜は、シリコン膜、アモルファスカーボン膜、又はレジスト膜である半導体装置の製造方法。 - 請求項1〜3のいずれか一つに記載の半導体装置の製造方法において、
前記第1トランジスタはメモリ素子の読み書きを行う周辺回路であり、
前記第2トランジスタは、ロジック回路である半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009197858A JP5331618B2 (ja) | 2009-08-28 | 2009-08-28 | 半導体装置の製造方法 |
US12/837,901 US8492227B2 (en) | 2009-08-28 | 2010-07-16 | Method of forming side wall spacers for a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009197858A JP5331618B2 (ja) | 2009-08-28 | 2009-08-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011049422A JP2011049422A (ja) | 2011-03-10 |
JP5331618B2 true JP5331618B2 (ja) | 2013-10-30 |
Family
ID=43625537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009197858A Expired - Fee Related JP5331618B2 (ja) | 2009-08-28 | 2009-08-28 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US8492227B2 (ja) |
JP (1) | JP5331618B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120309182A1 (en) * | 2011-05-31 | 2012-12-06 | Globalfoundries Inc. | Method of Forming Sidewall Spacers Having Different Widths Using a Non-Conformal Deposition Process |
TWI672797B (zh) * | 2015-08-26 | 2019-09-21 | 聯華電子股份有限公司 | 半導體結構及其製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264767A (ja) * | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2001093984A (ja) * | 1999-09-20 | 2001-04-06 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2003086704A (ja) * | 2001-09-14 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
TW571354B (en) * | 2002-11-07 | 2004-01-11 | Nanya Technology Corp | Manufacturing method of source/drain device |
JP4477886B2 (ja) | 2003-04-28 | 2010-06-09 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2004349377A (ja) * | 2003-05-21 | 2004-12-09 | Sharp Corp | 半導体装置及びその製造方法 |
JP2005005508A (ja) * | 2003-06-12 | 2005-01-06 | Sharp Corp | 半導体装置及びその製造方法 |
US20070200179A1 (en) * | 2006-02-24 | 2007-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strain enhanced CMOS architecture with amorphous carbon film and fabrication method of forming the same |
US7541239B2 (en) * | 2006-06-30 | 2009-06-02 | Intel Corporation | Selective spacer formation on transistors of different classes on the same device |
JP5092340B2 (ja) * | 2006-10-12 | 2012-12-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2008117848A (ja) * | 2006-11-01 | 2008-05-22 | Nec Electronics Corp | 半導体装置の製造方法 |
US7456066B2 (en) * | 2006-11-03 | 2008-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Variable width offset spacers for mixed signal and system on chip devices |
KR101353346B1 (ko) * | 2008-01-21 | 2014-02-17 | 삼성전자주식회사 | 주변 회로 영역의 불순물 영역들에 대한 열적 부담을완화시키는 반도체 소자의 제조 방법 |
-
2009
- 2009-08-28 JP JP2009197858A patent/JP5331618B2/ja not_active Expired - Fee Related
-
2010
- 2010-07-16 US US12/837,901 patent/US8492227B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110053367A1 (en) | 2011-03-03 |
US8492227B2 (en) | 2013-07-23 |
JP2011049422A (ja) | 2011-03-10 |
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