TWI349309B - Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii-remote plasma enhanced deposition processes - Google Patents

Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii-remote plasma enhanced deposition processes

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Publication number
TWI349309B
TWI349309B TW096138739A TW96138739A TWI349309B TW I349309 B TWI349309 B TW I349309B TW 096138739 A TW096138739 A TW 096138739A TW 96138739 A TW96138739 A TW 96138739A TW I349309 B TWI349309 B TW I349309B
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Taiwan
Prior art keywords
harp
sti
usage
formation
silicon dioxide
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TW096138739A
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English (en)
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TW200828437A (en
Inventor
Abhijit Basu Mallick
Jeffrey C Munro
Srinivas D Nemani
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Applied Materials Inc
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Publication of TW200828437A publication Critical patent/TW200828437A/zh
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Publication of TWI349309B publication Critical patent/TWI349309B/zh

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    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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TW096138739A 2006-10-16 2007-10-16 Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii-remote plasma enhanced deposition processes TWI349309B (en)

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KR20130114269A (ko) 2013-10-16
CN101528974A (zh) 2009-09-09
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US7498273B2 (en) 2009-03-03
TW200828437A (en) 2008-07-01
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EP2082078A2 (en) 2009-07-29
CN101528974B (zh) 2013-07-17
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US20070281495A1 (en) 2007-12-06
WO2008048862A3 (en) 2008-10-09

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