ATE499458T1 - Verfahren zur herstellung einer porösen sioch- schicht - Google Patents

Verfahren zur herstellung einer porösen sioch- schicht

Info

Publication number
ATE499458T1
ATE499458T1 AT03008723T AT03008723T ATE499458T1 AT E499458 T1 ATE499458 T1 AT E499458T1 AT 03008723 T AT03008723 T AT 03008723T AT 03008723 T AT03008723 T AT 03008723T AT E499458 T1 ATE499458 T1 AT E499458T1
Authority
AT
Austria
Prior art keywords
atomic
film
porous
gaseous reagents
producing
Prior art date
Application number
AT03008723T
Other languages
English (en)
Inventor
Raymond Nicholas Vrtis
Mark Leonard O'neill
Jean Louise Vincent
Aaron Scott Lukas
Manchao Xiao
John Anthony Thomas Norman
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/150,798 external-priority patent/US6846515B2/en
Priority claimed from US10/409,468 external-priority patent/US7384471B2/en
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE499458T1 publication Critical patent/ATE499458T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/045—Silicon oxycarbide, oxynitride or oxycarbonitride glasses
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
AT03008723T 2002-04-17 2003-04-16 Verfahren zur herstellung einer porösen sioch- schicht ATE499458T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37310402P 2002-04-17 2002-04-17
US10/150,798 US6846515B2 (en) 2002-04-17 2002-05-17 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US10/409,468 US7384471B2 (en) 2002-04-17 2003-04-07 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Publications (1)

Publication Number Publication Date
ATE499458T1 true ATE499458T1 (de) 2011-03-15

Family

ID=46150309

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03008723T ATE499458T1 (de) 2002-04-17 2003-04-16 Verfahren zur herstellung einer porösen sioch- schicht

Country Status (3)

Country Link
JP (3) JP5774830B2 (de)
KR (1) KR100494194B1 (de)
AT (1) ATE499458T1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20080268177A1 (en) * 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US8951342B2 (en) 2002-04-17 2015-02-10 Air Products And Chemicals, Inc. Methods for using porogens for low k porous organosilica glass films
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7410916B2 (en) * 2006-11-21 2008-08-12 Applied Materials, Inc. Method of improving initiation layer for low-k dielectric film by digital liquid flow meter
KR101108647B1 (ko) 2010-02-09 2012-01-31 서강대학교산학협력단 고온 오존처리를 포함하는 나노기공 초저유전 박막의 제조 방법 및 이에 의해 제조된 나노기공 초저유전 박막
KR102316276B1 (ko) 2020-04-20 2021-10-25 한국과학기술연구원 다단기공구조를 갖는 킬레이트 복합체 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998050945A2 (en) * 1997-05-07 1998-11-12 Skamser Daniel J Low density film for low dielectric constant applications
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
JP3756666B2 (ja) * 1998-05-08 2006-03-15 松下電器産業株式会社 多孔質膜の形成方法及びその形成装置
JP3888794B2 (ja) * 1999-01-27 2007-03-07 松下電器産業株式会社 多孔質膜の形成方法、配線構造体及びその形成方法
JP3633821B2 (ja) * 1999-03-18 2005-03-30 独立行政法人科学技術振興機構 気相からの低誘電率多孔質シリカ膜の形成方法
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
JP2001274153A (ja) * 2000-03-24 2001-10-05 Hitachi Kokusai Electric Inc 絶縁膜の製造方法
KR100615410B1 (ko) * 2000-08-02 2006-08-25 인터내셔널 비지네스 머신즈 코포레이션 저 유전 상수 다상 물질 및 그 증착 방법
EP1352107A2 (de) * 2000-10-25 2003-10-15 International Business Machines Corporation Ein material mit ultra-niedriger dielektrizitätskonstante als dielektrikum innerhalb einer schicht oder zwischen schichten in einem halbleiterbauelement, ein verfahren zu dessen herstellung und ein elektronisches bauelement mit diesem material
KR20030002993A (ko) * 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
US7384471B2 (en) * 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Also Published As

Publication number Publication date
KR20030082479A (ko) 2003-10-22
JP2012144738A (ja) 2012-08-02
KR100494194B1 (ko) 2005-06-10
JP2014150287A (ja) 2014-08-21
JP5774830B2 (ja) 2015-09-09
JP5711176B2 (ja) 2015-04-30
JP2011014925A (ja) 2011-01-20

Similar Documents

Publication Publication Date Title
EP2116632A3 (de) Porogene, porogenhaltige Vorstufe und Verfahren zur Verwendung derselben zur Bereitstellung von porösen Organosilikatglasschichten mit niedriger Dielektrizitätskonstante
KR101853802B1 (ko) 라디칼­성분 ｃｖｄ에 의한 컨포멀 층들
ATE482301T1 (de) Verfahren zur herstellung von siliziumoxidhaltigen schichten
CN109922952A (zh) 用于片材结合的硅氧烷等离子体聚合物
DE60229077D1 (de) Verfahren zur Herstellung einer dielektrischen Zwischenschicht unter Verwendung von Organosilikon-Vorläufern
TW200618107A (en) Method for depositing porous films
EP0935283A3 (de) Silikonpolymerisolationsfilm auf einem Halbleitersubstrat und seine Herstellungsmethode
JP2002009071A (ja) フッ素含有材料及び処理
RU2007115923A (ru) Многослойные покрытия, полученные химическим осаждением из паров, усиленным плазмой
TW200739804A (en) Method for producing siliceous film and substrate with siliceous film produced thereby
TW201118194A (en) Formation of silicon oxide using non-carbon flowable CVD processes
ATE326558T1 (de) Verfahren zur herstellung poröser keramik-metall verbundwerkstoffe und dadurch erhaltene verbundwerkstoffe
ATE474941T1 (de) Hochorientierte diamantschicht, verfahren zu ihrer herstellung sowie elektronische vorrichtung mit einer hochorientierten diamantschicht
KR100760336B1 (ko) 화학적 기상 반응 방법을 이용하여 흑연의 표면 특성을개질하는 방법
ATE499458T1 (de) Verfahren zur herstellung einer porösen sioch- schicht
TW200633063A (en) Producing method of film and semiconductor device using the film produced thereby
DE60210337D1 (de) Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid
TW200641994A (en) Precursor composition for porous membrane and process for preparation thereof, porous membrane and process for production thereof, and semiconductor device
KR100810443B1 (ko) 화학적 기상 반응 방법을 이용한 흑연에 내산화성을 갖게하는 방법 및 그 제조물
CN108493105A (zh) 二氧化硅薄膜及其制备方法
Klerer On the mechanism of the deposition of Silica by Pyrolytic decomposition of Silanes
CN102162091A (zh) 具有优良集成性能的低k前体
CA2074331A1 (en) Thin-film coatings made by means of plasma-activated chemical vapor deposition of fluorinated cycle siloxanes
JP2004186649A (ja) 低誘電率膜の形成方法
JP2007076950A (ja) ケイ素系混合高分子材料による炭化ケイ素（ＳｉＣ）薄膜の合成法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties